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EP0852539B1 - Ink-jet printing head and method of manufacturing it - Google Patents

Ink-jet printing head and method of manufacturing it Download PDF

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Publication number
EP0852539B1
EP0852539B1 EP96944566A EP96944566A EP0852539B1 EP 0852539 B1 EP0852539 B1 EP 0852539B1 EP 96944566 A EP96944566 A EP 96944566A EP 96944566 A EP96944566 A EP 96944566A EP 0852539 B1 EP0852539 B1 EP 0852539B1
Authority
EP
European Patent Office
Prior art keywords
layer
ink
channel
print head
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP96944566A
Other languages
German (de)
French (fr)
Other versions
EP0852539A2 (en
Inventor
Wolfgang Werner
Thomas Zettler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0852539A2 publication Critical patent/EP0852539A2/en
Application granted granted Critical
Publication of EP0852539B1 publication Critical patent/EP0852539B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1646Manufacturing processes thin film formation thin film formation by sputtering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14016Structure of bubble jet print heads
    • B41J2/14072Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14016Structure of bubble jet print heads
    • B41J2/14088Structure of heating means
    • B41J2/14112Resistive element
    • B41J2/14129Layer structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14201Structure of print heads with piezoelectric elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1601Production of bubble jet print heads
    • B41J2/1603Production of bubble jet print heads of the front shooter type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1607Production of print heads with piezoelectric elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1623Manufacturing processes bonding and adhesion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1628Manufacturing processes etching dry etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1629Manufacturing processes etching wet etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1631Manufacturing processes photolithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1632Manufacturing processes machining
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1642Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01Embodiments of or processes related to ink-jet heads
    • B41J2202/13Heads having an integrated circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S29/00Metal working
    • Y10S29/016Method or apparatus with etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • Y10T29/49165Manufacturing circuit on or in base by forming conductive walled aperture in base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49401Fluid pattern dispersing device making, e.g., ink jet

Definitions

  • the invention relates to an inkjet printhead arranged parallel to each other within a substrate and channels separated by partitions, which with a Cover plate and at one of its ends with one Exit opening are provided, as well as with each Channel assigned thermal or piezoelectric Element which, when excited and within the channel located ink liquid an ejection of a Causes ink droplets from the orifice, as well as a Method of making one Inkjet printhead.
  • Inkjet printheads are now widely used in inkjet printers used.
  • the inkjet print head is working mostly according to the known and for example in DE 30 12 698 C2 described drop-on-demand method, or DoD method for short called.
  • This is used to create a point a medium to be printed, e.g. B. paper, from a channel an ink droplet is ejected from the inkjet printhead, as soon as a thermal or piezoelectric assigned to the channel Element with a suitable current pulse a control circuit is controlled.
  • the suggestion is made e.g. B. by a current pulse of 2 ⁇ s to 10 ⁇ s duration, with a thermal energy of about 15 to 50 ⁇ joules is released.
  • a character e.g. B. a letter
  • the thermal or piezoelectric elements of the parallel adjacent channels in a suitable manner from the Drive circuit with current pulses are supplied so that the points on paper for that letter visible through the impact of appropriate drops of ink become.
  • Heating resistors can be arranged on or in the duct.
  • the Channels are often etched in by orientation a silicon substrate.
  • the heating resistors can attached to the channels by bonding.
  • Cover plate can be used for example a glass plate by anodic bonding on the channel plate and so that is applied in the first substrate.
  • the channels of the Inkjet printhead are also formed by the fact that a first substrate, which is provided with heating resistors, a cover plate provided with partitions is adjusted. Instead of the cover plate provided with partition walls also a flat cover plate on the first substrate be stuck on if the mentioned in the first substrate Channels each in the form of channel floors and two Channel side walls are already incorporated. The glued cover plate then forms the in these channels Sewer ceiling.
  • DE-A-3 917 434 discloses a multilayer ink print head with ink channels created by selective etching.
  • the ink print head points for receiving the ink channels and / or the drive chambers of the Transducer areas on a substrate layer with a cover layer arranged above.
  • the ink channels are generated by selective etching of the substrate layer through the openings.
  • the Openings are dimensioned so that after filling the ink channels with Ink the ink closes the openings capillary.
  • the openings of the cover layer are also closed with a glued-on lid.
  • the invention has for its object a Inkjet printhead and a method of making one Specify inkjet printhead, which is a complicated Adjustment and a gluing or bonding of two separately manufactured substrates is not necessary.
  • the cover plate consists of at least two layers that immediately on the channel one with a variety of over the channel arranged first layer provided openings, and that on the surface facing away from the channel of the first Layer is arranged a second layer, the openings covers.
  • the Channels K1, K2, K3 and K4 can have a total of one, for example Have a length of 1 cm and end at the bottom in a reservoir R, which is used to hold ink liquid is provided.
  • This reservoir R can with support points S be provided, which the floor and ceiling wall of the Reservoirs R to increase the stability with each other connect.
  • a feed channel can be placed in the reservoir R. Z open, over which the ink liquid from a Storage container is fed.
  • Each of the channels K1, K2, K3 and K4 has an area an assigned thermal element 2, in order to known DOD methods when stimulated by a suitable current pulse an ink droplet from the front Eject end of each channel K1, K2, K3 and K4.
  • a suitable current pulse an ink droplet from the front Eject end of each channel K1, K2, K3 and K4.
  • FIG. 3 illustrated inkjet printhead on the section line S1 to separate.
  • the ink jet printhead is along in Figures 1 and 2 the section line A-B and C-D shown in Figure 3 Area of the thermal element 2 is shown enlarged.
  • the thermal element 2 is, for example, one on one upper main surface of a substrate 1 arranged beams Polysilicon.
  • the bar extends orthogonally to Longitudinal direction of the channel K, has a width of about 1.5 to 2 ⁇ m and a length that is slightly shorter than the width of a Channel K is.
  • the thermal elements 2 of each Channels K1, K2, K3, K4 are, as shown in FIG. 3, preferably arranged side by side to the from the respective channels K1, K2, K3, K4 emerging Ink droplets when the respective thermal is excited Element 2 with the same energy and thus with same speed from the outlet openings that in FIG. 3 is designated by the reference number 15, let it come out.
  • the thermal element 2 serves as a heating resistance zone.
  • the substrate 1 may e.g. B. contain a complete integrated drive circuit on a silicon substrate.
  • a sufficiently thick heat-storing layer is preferably to be arranged below the thermal element 2, which prevents the main part of the thermal energy generated in the thermal element 2 from flowing off when a current pulse is applied in the substrate 1 and the liquid ("ink") in the channel K not being reached .
  • the heat storage layer is e.g. B. SiO 2 with a thickness greater than or equal to about 1.0 microns.
  • a field oxide preferably with an additional layer of plasma oxide or TEOS, can be used.
  • a protective layer 3 On the substrate 1 is a protective layer 3, the z. B. from 300 nm plasma oxide and 600 nm plasma nitride can exist arranged.
  • This protective layer 3 can be the upper main surface completely cover the substrate 1 and serves for protection of the thermal element 2 from erosion by the imploding bubbles in the ink liquid. Furthermore can this protective layer 3 also to protect an inside of the substrate 1 integrated control circuit before mobile Ions that may be in the ink liquid can be serve.
  • a further protective layer 4, which protects against erosion, is preferably provided in the area of the thermal element 2.
  • This protective layer 4 extends, as can be seen from FIGS. 2 and 3, completely beyond the outer contour of the thermal element 2 and additionally beyond the width of the channel K.
  • This additional protective layer 4 can, for. B. consist of sputtered tantalum (Ta), which is structured by photolithography and a CF 4 / O 2 plasma dry etching.
  • a further substrate 5 with a thickness of preferably 5 to 50 ⁇ m is arranged over the substrate 1 thus prepared on the main surface.
  • This substrate 5 determines the depth of the channels K and thus the height of the side walls of the channel K.
  • the substrate 5 can, for. B. consist of plasma oxide (SiO 2 ), so-called spin-on glasses (SOG), polysiloksanes or polyimide.
  • a first layer 6, which has a plurality of openings O is provided, applied by deposition.
  • This layer 6 can e.g. B. consist of plasma nitride or polysilicon and have a thickness of approximately 1 to 3 ⁇ m.
  • the openings O, the by photolithography and then dry etching can be formed, are arranged in the layer 6, that in a subsequent isotropic etching process for the Channels K1, K2, K3, K4 and the reservoir R necessary Cavities are formed in the substrate 5.
  • the openings O have for example a diameter of 1 ⁇ m and are one row in the area of channels K1, K2, K3 and K4 with each other and lie in the area of the reservoir, except for the mentioned support points S, in a large number side by side and with each other.
  • a layer for the Feed channel Z are etched out of Fig. 3.
  • the channels K1, K2, K3 and K4 as well as the reservoir R are etched by an isotropic etching, which must be sufficiently selective to the layers 3, 4 and 6 mentioned.
  • the isotropic etching can be carried out dry with a fluorine-containing plasma, in HF steam or wet with BHF (buffered HF).
  • the isotropic etching can be carried out using an O 2 plasma.
  • a second layer 7 is applied to the layer 6, e.g. B. again by deposition.
  • This layer 7 should preferably be sufficiently non-compliant. A complete closure of the openings O is thereby facilitated.
  • the layer 7 is deposited until the openings O are closed (for example plasma Si 3 N 4 deposition) or is ended beforehand (for example CVD deposition of boron-phosphorus-silicate glass BPSG) ).
  • the sealing with BPSG is preferably accomplished by a subsequent flow process at high temperatures.
  • thermo elements 2 in the range the channel bottom of the channels K are arranged, it is also possible, as shown in FIGS. 4 and 5, the thermal element 2 to be arranged within the channel K.
  • a resistance layer is arranged within the substrate 5, which is then structured by photolithography and etching.
  • the resistance layer of the thermal element 2 is arranged at approximately half the height of the substrate 5.
  • the substrate 5 is first deposited on a base plate (not shown in FIG. 4) in order to achieve its desired half thickness.
  • the resistance layer is then deposited on the substrate 5 and structured, as shown in FIG. 5.
  • the thermal element 2 is designed in such a way that a thin bar 2 a hangs within the channel K, which is suspended on the edge side over wider webs within the substrate 5.
  • the thermal element 2 is thus not in contact with the substrate 1, but is suspended within the channel K, so that the energy generated by the thermal element 2 can advantageously be released exclusively to the ink liquid within the channel K.
  • the thermal element 2 is automatically exposed. 5, which shows a plan view from above along the section line EF in FIG. 4, to the left and right of the beam 2a, are used as resistance connections and can be contacted either from above or below. Since, in contrast to the embodiment of FIGS. 1 and 2, the thermal element 2 is exposed to the ink liquid, it is recommended that the thermal element 2 be made of an erosion-resistant material, e.g. B. tantalum. After the deposition and structuring of the resistance layer forming the thermal element 2, the second part of the substrate 5 is deposited.
  • outlet openings 15 at the subsequent layer 7 deposition not mentioned are closed, are the diameters of the Outlet openings 15 chosen so large that the openings O the outlet openings are securely closed during the isotropic etching process 15 itself certainly not closed become.
  • the outlet openings 15 are in the Embodiment of Fig. 6 parallel to Substrate surface.
  • the outlet openings 15 are preferably larger than 1.0 ⁇ m.
  • the expediently Diameters between 5 and 50 ⁇ m selected.
  • the essential The advantage of these outlet openings 15 is their circular shape To see shape, the emergence of a circular Droplets allowed, creating a dot on the paper with exactly circular outer contour can be formed.
  • the Outlet openings 15 not only in a row, but can be arranged flat in a matrix. Of Another is not sawing or breaking like in Embodiment of Fig. 3 necessary, whereby a Contamination of the outlet opening 15 can be avoided.
  • thermal element 2 consisting of polysilicon with an integrated transistor on a silicon substrate.
  • the already known reference symbols stand for the known parts. For the sake of clarity, the representation of the channel K and the layers 6 and 7 has been omitted.
  • the thermal element 2 made of low-doped polysilicon is contacted at the edge by highly doped polysilicon.
  • the highly doped polysilicon sections are marked with the reference symbol 31.
  • the two highly doped polysilicon sections 31 are contracted by metal tracks 30 which act as leads.
  • Two heat-storing layers 20, 21 are arranged below the thermal element 2.
  • the layer 20, which consists for example of TEOS-SiO 2 is located directly below the thermal element 2. Below this layer 20 there is a further heat-storing layer 21 which, for. B. consists of FOX-SiO 2 .
  • the metal track 30 can consist of aluminum or bismuth.
  • the protective layer 3 already known from FIG. 1 consists of plasma SiO 2 and a layer of plasma Si 3 N 4 , which extends over the metal track 30 in the region of the MOS transistor.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)

Abstract

The proposed ink-jet printing head has a plurality of parallel channels (K; K1; K2;...) which are etched isotropically through apertures (O) in a first layer (6) overlying the channels (K; K1; K2;...). After the etching process, the apertures (O) in the first layer (6) are closed off by the deposition on the first layer (6) of a second layer (7) which covers the apertures (O), the latter having a diameter of, for example, 1 νm. The apertures (O) produced in the first layer (6) by photolithography and subsequent dry etching are arranged in such a way that the desired channels (K; K1; K2;...) beneath the first layer (6) are exposed by the etching process. Advantages: no adjustment-related costs, formation of closed channels without bonding or adhesive techniques, possibility of integrating the trigger circuit and printing head on a single substrate.

Description

Die Erfindung betrifft einen Tintenstrahldruckkopf mit innerhalb eines Substrates parallel zueinander angeordneten und durch Trennwände getrennten Kanälen, welche mit einer Deckelplatte und an einem ihrer Enden jeweils mit einer Austrittsöffnung versehen sind, sowie mit einem einem jeden Kanal zugeordneten thermischen oder piezoelektrischen Element, welches bei Anregung und bei innerhalb des Kanales befindlicher Tintenflüssigkeit ein Ausstoßen eines Tintentröpfchens aus der Austrittsöffnung bewirkt, sowie ein Verfahren zum Herstellen eines solchen Tintenstrahldruckkopfes.The invention relates to an inkjet printhead arranged parallel to each other within a substrate and channels separated by partitions, which with a Cover plate and at one of its ends with one Exit opening are provided, as well as with each Channel assigned thermal or piezoelectric Element which, when excited and within the channel located ink liquid an ejection of a Causes ink droplets from the orifice, as well as a Method of making one Inkjet printhead.

Tintenstrahldruckköpfe werden heute in großem Umfang in Tintenstrahldruckern eingesetzt. Der Tintenstrahldruckkopf arbeitet meist nach dem bekannten und zum Beispiel in DE 30 12 698 C2 beschriebenen Drop-On-Demand-Verfahren, kurz DoD-Verfahren genannt. Hierbei wird zum Erzeugen eines Punktes auf einem zu bedruckenden Medium, z. B. Papier, aus einem Kanal des Tintenstrahldruckkopfes ein Tintentröpfchen ausgestoßen, sobald ein dem Kanal zugeordnetes thermisches oder piezoelektrisches Element mit einem hierfür geeigneten Stromimpuls aus einer Ansteuerschaltung angesteuert wird. Die Anregung erfolgt z. B. durch einen Stromimpuls von 2µs bis 10µs Dauer, wobei eine thermische Energie von etwa 15 bis 50 µ Joule freigesetzt wird. Diese Aufheizung führt zur lokalen Verdampfung der Tintenflüssigkeit (Blasenbildung), wobei die Flüssigkeitssäule aus der entsprechenden Kanalaustrittsöffnung gedrängt wird, ohne zunächst anzureißen. Nach Beendigung des Stromimpulses kollabiert die Blase über dem thermischen Element. Als Folge wird ein Teil der Flüssigkeitssäule zurückgezogen, wobei sich ein Tintentropfen außerhalb der Kanalaustrittsöffnungen abschnürt und sich entsprechend dem Impulserhaltungssatz weiterbewegt. Dieses Tintentröpfchen erzeugt auf dem Papier einen im Falle von schwarzer Tinte schwarzen Druckpunkt. Die typische Emmisionsfrequenz liegt bei etwa 5 kHz.Inkjet printheads are now widely used in inkjet printers used. The inkjet print head is working mostly according to the known and for example in DE 30 12 698 C2 described drop-on-demand method, or DoD method for short called. This is used to create a point a medium to be printed, e.g. B. paper, from a channel an ink droplet is ejected from the inkjet printhead, as soon as a thermal or piezoelectric assigned to the channel Element with a suitable current pulse a control circuit is controlled. The suggestion is made e.g. B. by a current pulse of 2µs to 10µs duration, with a thermal energy of about 15 to 50 µ joules is released. This heating leads to local evaporation the ink liquid (bubble formation), the liquid column from the corresponding channel outlet opening is pushed without first touching. After completing the Current pulse collapses the bubble over the thermal element. As a result, part of the liquid column is withdrawn, with an ink drop outside the channel outlet openings pinches off and according to the momentum conservation law moved on. This ink droplet creates on black paper in the case of black ink Pressure point. The typical emission frequency is around 5 kHz.

Zur Erzeugung eines Zeichens, z. B. eines Buchstabens, müssen die thermischen oder piezoelektrischen Elemente der parallel nebeneinander liegenden Kanäle in geeigneter Weise von der Ansteuerschaltung mit Stromimpulsen so versorgt werden, daß die für diesen Buchstaben notwendigen Punkte auf dem Papier durch das Aufprallen entsprechender Tintentropfchen sichtbar werden.To create a character, e.g. B. a letter the thermal or piezoelectric elements of the parallel adjacent channels in a suitable manner from the Drive circuit with current pulses are supplied so that the points on paper for that letter visible through the impact of appropriate drops of ink become.

Aufgrund der sehr kleinen Kanaldurchmesser und engen Rasterabstände zwischen den Kanälen (bzw. Düsen) werden zur Herstellung von Tintenstrahldruckköpfen aus der Halbleitertechnologie bekannte Bearbeitungsverfahren für Feinstrukturen eingesetzt. Beispiele solcher Bearbeitungsverfahren sind in EP 0 359 417 A2, EP 0 434 946 A2 sowie in der Veröffentlichung IEEE Transactions on Electron Devices, Volume 26, 1979, Seite 1918 beschrieben. Im Gegensatz zur Fertigung von integrierten Halbleiterschaltungen, die auf einem einzigen Substrat gebildet werden, sind bei den bekannten Verfahren zur Herstellung von Tintenstrahldruckköpfen stets zwei verschiedene Substrate notwendig. Auf einem Substrat werden Trennwände zwischen Kanälen gebildet und diese mit einer aus einem zweiten Substrat hergestellten Deckelplatte, die separat gefertigt wird, verschlossen.Due to the very small channel diameter and narrow Grid distances between the channels (or nozzles) become Manufacture of inkjet printheads from the Semiconductor technology known processing methods for Fine structures used. Examples of such Processing methods are in EP 0 359 417 A2, EP 0 434 946 A2 as well as in the publication IEEE Transactions on Electron Devices, Volume 26, 1979, page 1918. in the Contrary to the production of integrated Semiconductor circuits based on a single substrate are formed in the known methods for Manufacturing inkjet printheads always two different substrates necessary. Be on a substrate Partitions formed between channels and these with one a second substrate manufactured cover plate, the is manufactured separately, closed.

Bei den bekannten Verfahren können zur thermischen Anregung Heizwiderstände am oder im Kanal angeordnet werden. Die Kanäle werden häufig durch orientierungsabhängiges Ätzen in einem Siliziumsubtrat gebildet. Die Heizwiderstände können durch Bonden an den Kanälen befestigt werden. Als Deckelplatte kann beispielsweise eine Glasplatte verwendet werden, die durch anodisches Bonden auf der Kanalplatte und damit im ersten Substrat aufgebracht wird.In the known methods for thermal excitation Heating resistors can be arranged on or in the duct. The Channels are often etched in by orientation a silicon substrate. The heating resistors can attached to the channels by bonding. As Cover plate can be used for example a glass plate by anodic bonding on the channel plate and so that is applied in the first substrate.

Wie aus EP 0 443 722 A2 bekannt, können die Kanäle des Tintenstrahldruckkopfes auch dadurch gebildet werden, daß auf ein erstes Substrat, das mit Heizwiderständen versehen ist, eine mit Trennwänden versehene Deckelplatte justiert wird. Anstelle der mit Trennwänden versehenen Deckelplatte kann auch eine ebene Deckelplatte auf dem ersten Substrat aufgeklebt werden, wenn in das erste Substrat die erwähnten Kanäle jeweils in Form von Kanalböden und zwei Kanalseitenwandungen bereits eingearbeitet sind. Die aufgeklebte Deckelplatte bildet dann bei diesen Kanälen die Kanaldecke. As known from EP 0 443 722 A2, the channels of the Inkjet printhead are also formed by the fact that a first substrate, which is provided with heating resistors, a cover plate provided with partitions is adjusted. Instead of the cover plate provided with partition walls also a flat cover plate on the first substrate be stuck on if the mentioned in the first substrate Channels each in the form of channel floors and two Channel side walls are already incorporated. The glued cover plate then forms the in these channels Sewer ceiling.

Die DE-A- 3 917 434 offenbart einen mehrschichtig aufgebauten Tintendruckkopf mit durch selektives Ätzen erzeugten Tintenkanälen. Der Tintendruckkopf weist zur Aufnahme der Tintenkanäle und/oder der Antriebskammern der Wandlerbereiche eine Substratschicht mit darüber angeordneter Deckschicht auf. In der Deckschicht sind Öffnungen entsprechend dem Verlauf der zu erzeugenden Tintenversorgungskanäle angeordnet. Die Tintenkanäle werden durch selektives Ätzen der Substratschicht durch die Öffnungen erzeugt. Die Öffnungen sind dabei so dimensioniert, daß nach Füllen der Tintenkanäle mit Tinte die Tinte die Öffnungen kapillarisch verschließt. Bei einer Ausführungsform werden nach Ausätzen der Tintenkanäle die Öffnungen der Deckschicht mit einem aufgeklebten Deckel verschlossen. DE-A-3 917 434 discloses a multilayer ink print head with ink channels created by selective etching. The ink print head points for receiving the ink channels and / or the drive chambers of the Transducer areas on a substrate layer with a cover layer arranged above. There are openings in the cover layer corresponding to the course of the generating ink supply channels arranged. The ink channels are generated by selective etching of the substrate layer through the openings. The Openings are dimensioned so that after filling the ink channels with Ink the ink closes the openings capillary. In one embodiment After etching out the ink channels, the openings of the cover layer are also closed with a glued-on lid.

Problematisch bei diesen bekannten Verfahren zum Herstellen integrierbarer Tintenstrahldruckköpfe ist die zwingende Verwendung von zwei miteinander zu verbindenden Substraten. Dies erfordert eine komplizierte Justage, wobei die feinen Kanäle bei der Verklebung der beiden Substrate vor Verunreinigungen geschützt werden müssen, was zusätzlichen Aufwand bedeutet.Problematic with these known methods of manufacture integrable inkjet printheads is the imperative Use of two substrates to be joined together. This requires a complicated adjustment, the fine Channels before gluing the two substrates Contamination must be protected, which additional Effort means.

Der Erfindung liegt die Aufgabe zugrunde, einen Tintenstrahldruckkopf und ein Verfahren zum Herstellen eines Tintenstrahldruckkopfes anzugeben, bei dem eine komplizierte Justage und ein Verkleben oder Bonden von zwei separat hergestellten Substraten nicht notwendig ist.The invention has for its object a Inkjet printhead and a method of making one Specify inkjet printhead, which is a complicated Adjustment and a gluing or bonding of two separately manufactured substrates is not necessary.

Diese Aufgabe wird für einen Tintenstrahldruckkopf der eingangs genannten Art dadurch gelöst, daß die Deckelplatte aus mindestens zwei Schichten besteht, daß unmittelbar auf dem Kanal eine mit einer Vielzahl von über den Kanal liegenden Öffnungen versehene erste Schicht angeordnet ist, und daß auf der dem Kanal abgewandten Oberfläche der ersten Schicht eine zweite Schicht angeordnet ist, die die Öffnungen abdeckt. This task is for an inkjet printhead type mentioned solved in that the cover plate consists of at least two layers that immediately on the channel one with a variety of over the channel arranged first layer provided openings, and that on the surface facing away from the channel of the first Layer is arranged a second layer, the openings covers.

Weiterbildungen des Tintenstrahldruckkopfes sind in den Unteransprüchen 2 bis 14 angegeben.Further developments of the inkjet print head are in the Subclaims 2 to 14 specified.

Ein Verfahren zum Herstellen eines solchen Tintenstrahldruckkopfes weist folgende Verfahrensschritte auf:

  • Bereitstellen eines die Höhe der Kanalseitenwände bestimmenden Substrates, welchem thermische oder piezoelektrische Elemente im Bereich der späteren Kanäle zugeordnet sind;
  • Abscheidung einer ersten Schicht auf diesem Substrat;
  • Strukturierung dieser ersten Schicht mit einer Vielzahl von Öffnungen oberhalb der späteren Kanäle;
  • isotrope Ätzung des Substrates durch die Öffnungen in der ersten Schicht solange, bis die Kanäle freigelegt sind;
  • Abscheidung einer zweiten Schicht auf die erste Schicht solange bis die Öffnungen verschlossen sind;
  • Bildung von Austrittsöffnungen an jeweils einem Ende der Kanäle.
A method for producing such an inkjet printhead has the following method steps:
  • Providing a substrate which determines the height of the channel side walls and to which thermal or piezoelectric elements in the region of the later channels are assigned;
  • Depositing a first layer on this substrate;
  • Structuring of this first layer with a large number of openings above the later channels;
  • isotropic etching of the substrate through the openings in the first layer until the channels are exposed;
  • Depositing a second layer on the first layer until the openings are closed;
  • Formation of outlet openings at each end of the channels.

Weiterbildungen dieses Herstellungsverfahrens sind in den Ansprüchen 16 bis 24 angegeben.Further developments of this manufacturing process are in the Claims 16 to 24 specified.

Der Tintentrahldruckkopf nach der Erfindung und dessen Herstellverfahren wird nachfolgend im Zusammenhang mit Ausführungsbeispielen näher erläutert. In den Ausführungsbeispielen wird der Tintenstrahldruckkopf und dessen Herstellverfahren anhand eines Druckkopfes mit thermischer Anregung beschrieben. Es ist jedoch genauso gut möglich, einen Druckkopf mit piezoelektrischer Anregung herzustellen. Die Erfindung bezieht sich daher auch auf solche Druckköpfe mit piezoelektrischer Anregung. Es zeigen:

Figur 1
Eine ausschnittsweise Schnittdarstellung durch einen Tintenstrahlkopf im Bereich des thermische Elementes eines Kanales in Längserstreckung des Kanales,
Figur 2
eine ausschnittsweise Schnittdarstellung durch den Tintenstrahlkopf von Figur 1 im Bereich des thermischen Elementes, jedoch orthogonal zur Längserstreckung des Kanales,
Figur 3
eine Draufsicht auf die Oberseite des in den Figuren 1 und 2 dargestellten Tintenstrahldruckkopfes, bei welchem die zweite Schicht der Deckelplatte noch nicht aufgebracht ist,
Figur 4
eine ähnliche Darstellung wie Figur 1, jedoch mit innerhalb des Kanalraumes angeordneten thermischen Element,
Figur 5
eine Schnittdarstellung des Tintenstrahldruckkopfes von Figur 4 entlang der dortigen Schnittlinie E-F,
Figur 6
die ausschnittsweise Darstellung von zwei Kanalenden eines Tintenstrahldruckkopfes mit orthogonal zur Längserstreckung der Kanäle angeordneten Austrittsöffnungen,
Figur 7
eine ausschnittsweise schematische Darstellung des Tintenstrahldruckkopfes mit integriertem Transistor auf Siliziumsubstrat.
The ink jet print head according to the invention and its production method is explained in more detail below in connection with exemplary embodiments. In the exemplary embodiments, the inkjet print head and its production method are described using a print head with thermal excitation. However, it is equally possible to produce a printhead with piezoelectric excitation. The invention therefore also relates to such printheads with piezoelectric excitation. Show it:
Figure 1
A sectional view through an ink jet head in the region of the thermal element of a channel in the longitudinal extension of the channel,
Figure 2
2 shows a sectional view through the ink jet head from FIG. 1 in the area of the thermal element, but orthogonal to the longitudinal extent of the channel,
Figure 3
1 shows a plan view of the top of the ink jet print head shown in FIGS. 1 and 2, in which the second layer of the cover plate has not yet been applied,
Figure 4
1 shows a representation similar to FIG. 1, but with a thermal element arranged inside the channel space,
Figure 5
3 shows a sectional illustration of the ink jet print head from FIG. 4 along the section line EF there,
Figure 6
2 shows a section of two channel ends of an ink jet print head with outlet openings arranged orthogonally to the longitudinal extent of the channels,
Figure 7
a fragmentary schematic representation of the inkjet printhead with an integrated transistor on a silicon substrate.

In den nachfolgenden Figuren bezeichnen, sofern nicht anders angegeben, gleiche Bezugszeichen gleiche Teile mit gleicher Bedeutung.Designate in the following figures, unless otherwise indicated, same reference numerals, same parts with the same Meaning.

Der Aufbau eines möglichen Ausführungsbeispieles eines Tintenstrahldruckkopfes nach der Erfindung wird aus einer Zusammenschau der Figuren 1, 2 und 3 deutlich. Der Tintenstrahldruckkopf ist in Figur 3 in Draufsicht schematisch ausschnittsweise dargestellt, wobei die im einzelnen noch zu erläuternde zweite Schicht 7 einer Deckelplatte der Deutlichkeit halber abgenommen ist. Der Tintenstrahldruckkopf verfügt über eine Vielzahl von parallel nebeneinander liegenden Kanälen K1, K2, K3, K4, die beispielsweise eine Breite von 50µm aufweisen können. Zwischen den einzelnene Kanälen K1, K2 bzw. K2, K3 oder K3, K4 sind Trennwände 10 mit einer Breite von beispielsweise 30µm angeordnet. Die Kanäle K1, K2, K3 und K4 sind an ihren in Figur 3 oben gezeichneten Enden noch verschlossen. Die Kanäle K1, K2, K3 und K4 können insgesamt beispielsweise eine Länge von 1 cm aufweisen und enden an ihrer Unterseite in einem Reservoir R, das zur Aufnahme von Tintenflüssigkeit vorgesehen ist. Dieses Reservoir R kann mit Stützstellen S versehen sein, welche die Boden- und Deckenwand des Reservoirs R zur Erhöhung der Stabilität miteinander verbinden. Zusätzlich kann in das Reservoir R ein Zuführkanal Z münden, über welchen die Tintenflüssigkeit von einem Vorratsbehälter zugeführt wird.The structure of a possible embodiment of an ink jet print head according to the invention from a Summary of Figures 1, 2 and 3 clearly. Of the Inkjet printhead is in plan view in Figure 3 shown schematically in sections, the im individual second layer 7 of a still to be explained Cover plate is removed for clarity. Of the Inkjet printhead has a variety of parallel adjacent channels K1, K2, K3, K4, the for example, can have a width of 50 µm. Between the individual channels K1, K2 or K2, K3 or K3, K4 are partitions 10 with a width of, for example 30µm arranged. The channels K1, K2, K3 and K4 are on their in Figure 3 ends drawn still closed. The Channels K1, K2, K3 and K4 can have a total of one, for example Have a length of 1 cm and end at the bottom in a reservoir R, which is used to hold ink liquid is provided. This reservoir R can with support points S be provided, which the floor and ceiling wall of the Reservoirs R to increase the stability with each other connect. In addition, a feed channel can be placed in the reservoir R. Z open, over which the ink liquid from a Storage container is fed.

Jeder der Kanäle K1, K2, K3 und K4 weist einen Bereich mit einem zugeordneten thermischen Element 2 auf, um nach dem an sich bekannten DOD-Verfahren bei Anregung durch einen geeigneten Stromimpuls ein Tintentröpfchen aus dem vorderen Ende des jeweiligen Kanales K1, K2, K3 und K4 auszustoßen. Hierfür ist in einem Herstellschritt der in Figur 3 dargestellte Tintenstrahldruckkopf an der Schnittlinie S1 aufzutrennen. Die kann z. B. bei der Vereinzelung der integriert herstellbaren Tintenstrahlköpfe durch Sägen oder Ansägen, Anätzen oder Brechen entlang der Schnittlinie S1 erfolgen.Each of the channels K1, K2, K3 and K4 has an area an assigned thermal element 2, in order to known DOD methods when stimulated by a suitable current pulse an ink droplet from the front Eject end of each channel K1, K2, K3 and K4. For this, in a manufacturing step, that in FIG. 3 illustrated inkjet printhead on the section line S1 to separate. The z. B. in the separation of integrates manufacturable inkjet heads by sawing or Sawing, etching or breaking along the cutting line S1 respectively.

Der Tintenstrahldruckkopf ist in den Figuren 1 und 2 entlang der in Figur 3 dargestellten Schnittlinie A-B und C-D im Bereich des thermischen Elementes 2 vergrößert dargestellt. The ink jet printhead is along in Figures 1 and 2 the section line A-B and C-D shown in Figure 3 Area of the thermal element 2 is shown enlarged.

Das thermische Element 2 ist beispielsweise ein auf einer oberen Hauptfläche eines Substrates 1 angeordneter Balken aus Polysilizium. Der Balken erstreckt sich orthogonal zur Längsrichtung des Kanales K, hat etwa eine Breite von 1,5 bis 2µm und eine Länge, die etwas kürzer als die Breite eines Kanales K ist. Die thermischen Elemente 2 der einzelnen Kanäle K1, K2, K3, K4 sind, wie in Figur 3 dargestellt, vorzugsweise nebeneinander angeordnet, um die aus den jeweiligen Kanälen K1, K2, K3, K4 heraustretenden Tintentröpfchen bei Anregung des jeweiligen thermischen Elementes 2 mit jeweils gleicher Energie und damit mit gleicher Geschwindigkeit aus den Austrittsöffnungen, die in Figur 3 mit den Bezugszeichen 15 bezeichnet sind, heraustreten zu lassen.The thermal element 2 is, for example, one on one upper main surface of a substrate 1 arranged beams Polysilicon. The bar extends orthogonally to Longitudinal direction of the channel K, has a width of about 1.5 to 2µm and a length that is slightly shorter than the width of a Channel K is. The thermal elements 2 of each Channels K1, K2, K3, K4 are, as shown in FIG. 3, preferably arranged side by side to the from the respective channels K1, K2, K3, K4 emerging Ink droplets when the respective thermal is excited Element 2 with the same energy and thus with same speed from the outlet openings that in FIG. 3 is designated by the reference number 15, let it come out.

Das thermische Element 2 dient als Heizwiderstandszone. Das Substrat 1 kann z. B. eine vollständige integrierte Ansteuerschaltung auf einem Siliziumsubstrat enthalten. Unterhalb des thermischen Elementes 2 ist vorzugsweise eine ausreichend dicke wärmespeichernde Schicht anzuordnen, welche verhindert, daß der Hauptteil der im thermischen Element 2 erzeugten thermischen Energie bei Anlegung eines Stromimpulses im Substrat 1 abfließt und die Flüssigkeit ("Tinte") im Kanal K nicht ereicht wird. Die wärmespeichernde Schicht ist z. B. SiO2 mit einer Dicke größer gleich etwa 1,0 µm. Bei der Integration mit einer elektronischen Ansteuerschaltung auf einem Siliziumsubstrat kann hierfür z. B. ein Feldoxid, vorzugsweise mit einer Zusatzschicht aus Plasmaoxid oder TEOS, verwendet werden.The thermal element 2 serves as a heating resistance zone. The substrate 1 may e.g. B. contain a complete integrated drive circuit on a silicon substrate. A sufficiently thick heat-storing layer is preferably to be arranged below the thermal element 2, which prevents the main part of the thermal energy generated in the thermal element 2 from flowing off when a current pulse is applied in the substrate 1 and the liquid ("ink") in the channel K not being reached . The heat storage layer is e.g. B. SiO 2 with a thickness greater than or equal to about 1.0 microns. When integrating with an electronic control circuit on a silicon substrate, z. B. a field oxide, preferably with an additional layer of plasma oxide or TEOS, can be used.

Auf dem Substrat 1 ist eine Schutzschicht 3, die z. B. aus 300 nm Plasmaoxid und 600 nm Plasmanitrid bestehen kann, angeordnet. Diese Schutzschicht 3 kann die obere Hauptfläche des Substrates 1 vollständig überdecken und dient zum Schutz des thermischen Elementes 2 vor Erosion durch die implodierenden Blasen in der Tintenflüssigkeit. Des weiteren kann diese Schutzschicht 3 auch zum Schutz einer innerhalb des Substrates 1 integrierten Ansteuerschaltung vor mobilen Ionen, die möglicherweise in der Tintenflüssigkeit enthalten sein können, dienen.On the substrate 1 is a protective layer 3, the z. B. from 300 nm plasma oxide and 600 nm plasma nitride can exist arranged. This protective layer 3 can be the upper main surface completely cover the substrate 1 and serves for protection of the thermal element 2 from erosion by the imploding bubbles in the ink liquid. Furthermore can this protective layer 3 also to protect an inside of the substrate 1 integrated control circuit before mobile Ions that may be in the ink liquid can be serve.

Vorzugsweise ist im Bereich des thermischen Elementes 2 eine weitere Schutzschicht 4 vorgesehen, die vor Erosion schützt. Diese Schutzschicht 4 erstreckt sich, wie aus Figur 2 und 3 ersichtlich, vollständig über die Außenkontur des thermischen Elementes 2 und zusätzlich über die Breite des Kanales K hinaus. Diese weitere Schutzschicht 4 kann z. B. aus gesputterten Tantal (Ta) bestehen, welches durch Fotolithographie und eine CF4/O2-Plasmatrockenätzung strukturiert wird.A further protective layer 4, which protects against erosion, is preferably provided in the area of the thermal element 2. This protective layer 4 extends, as can be seen from FIGS. 2 and 3, completely beyond the outer contour of the thermal element 2 and additionally beyond the width of the channel K. This additional protective layer 4 can, for. B. consist of sputtered tantalum (Ta), which is structured by photolithography and a CF 4 / O 2 plasma dry etching.

Über das so an der Hauptfläche vorbereitete Substrat 1 ist ein weiteres Substrat 5 mit einer Dicke von vorzugsweise 5 bis 50µm angeordnet. Dieses Substrat 5 bestimmt die Tiefe der Kanäle K und damit die Höhe der Seitenwände des Kanales K. Das Substrat 5 kann z. B. aus Plasmaoxid (SiO2), sogenannenten Spin-On-Gläsern (SOG), Polysiloksane oder Polyimid bestehen.A further substrate 5 with a thickness of preferably 5 to 50 μm is arranged over the substrate 1 thus prepared on the main surface. This substrate 5 determines the depth of the channels K and thus the height of the side walls of the channel K. The substrate 5 can, for. B. consist of plasma oxide (SiO 2 ), so-called spin-on glasses (SOG), polysiloksanes or polyimide.

Auf das Substrat 5, welches zunächst unstrukturiert ist, wird eine erste Schicht 6, die mit einer Vielzahl von Öffnungen O versehen ist, durch Abscheidung aufgebracht. Diese Schicht 6 kann z. B. aus Plasmanitrid oder Polysilizium bestehen und eine Dicke von etwa 1 bis 3µm aufweisen. Die Öffnungen O, die durch Fotolithographie und anschließendem Trockenätzen gebildet werden können, sind so in der Schicht 6 angeordnet, daß in einem nachfolgenden isotropen Ätzvorgang die für die Kanäle K1, K2, K3, K4 und das Reservoir R notwendigen Hohlräume im Substrat 5 gebildet werden. Die Öffnungen O weisen beispielsweise einen Durchmesser von 1 µm auf und sind zueinander im Bereich der Kanäle K1, K2, K3 und K4 einreihig untereinander und liegen im Bereich des Reservoirs, bis auf die erwähnten Stützstellen S, in einer Vielzahl nebeneinander und untereinander. On the substrate 5, which is initially unstructured a first layer 6, which has a plurality of openings O is provided, applied by deposition. This layer 6 can e.g. B. consist of plasma nitride or polysilicon and have a thickness of approximately 1 to 3 μm. The openings O, the by photolithography and then dry etching can be formed, are arranged in the layer 6, that in a subsequent isotropic etching process for the Channels K1, K2, K3, K4 and the reservoir R necessary Cavities are formed in the substrate 5. The openings O have for example a diameter of 1 µm and are one row in the area of channels K1, K2, K3 and K4 with each other and lie in the area of the reservoir, except for the mentioned support points S, in a large number side by side and with each other.

Des weiteren kann in der Schicht 6 ein Fenster für den Zuführungskanal Z aus Fig. 3 herausgeätzt werden.Furthermore, a layer for the Feed channel Z are etched out of Fig. 3.

Die Kanäle K1, K2, K3 und K4 sowie das Reservoir R (vgl. Fig. 3) werden durch eine isotrope Ätzung, die ausreichend selektiv zu den erwähnten Schichten 3, 4 und 6 sein muß, geätzt. Für den Fall, daß das Substrat 5 aus Plasmaoxid oder SOG und die Schicht 6 aus Polysilizium oder Siliziumnitrid besteht, kann die isotrope Ätzung trocken mit einem fluorhaltigen Plasma, in HF-Dampf oder naß mit BHF (buffered HF) erfolgen. Für den Fall, daß das Substrat 5 aus Poliamid oder einem anderen organischen Material besteht, kann die isotropische Ätzung durch ein O2-Plasma erfolgen.The channels K1, K2, K3 and K4 as well as the reservoir R (see FIG. 3) are etched by an isotropic etching, which must be sufficiently selective to the layers 3, 4 and 6 mentioned. In the event that the substrate 5 consists of plasma oxide or SOG and the layer 6 consists of polysilicon or silicon nitride, the isotropic etching can be carried out dry with a fluorine-containing plasma, in HF steam or wet with BHF (buffered HF). In the event that the substrate 5 consists of polyamide or another organic material, the isotropic etching can be carried out using an O 2 plasma.

Nachdem die gewünschte Strukturierung der Kanäle K1, K2, K3, K4 usw. und des Reservoirs und damit auch die Unterätzung der Schicht 6 (vgl. Fig. 2) erreicht ist, wird auf die Schicht 6 eine zweite Schicht 7 aufgebracht, z. B. wieder durch Abscheidung. Diese Schicht 7 sollte vorzugsweise ausreichend nichtkonform sein. Dadurch wird ein vollständiger Verschluß der Öffnungen O erleichtert. Die Abscheidung der Schicht 7 erfolgt so lange, bis die Öffnungen O verschlossen sind (z. B. Plasma-Si3N4-Abscheidung) oder wird vorher beendet (z. B. CVD-Abscheidung von Bor-Phosphor-Silikat-Glas BPSG). Der Verschluß mit BPSG wird vorzugsweise durch einen nachfolgenden Verfließprozeß bei hohen Temperaturen vollendet.After the desired structuring of the channels K1, K2, K3, K4 etc. and the reservoir and thus also the undercutting of the layer 6 (see FIG. 2) has been achieved, a second layer 7 is applied to the layer 6, e.g. B. again by deposition. This layer 7 should preferably be sufficiently non-compliant. A complete closure of the openings O is thereby facilitated. The layer 7 is deposited until the openings O are closed (for example plasma Si 3 N 4 deposition) or is ended beforehand (for example CVD deposition of boron-phosphorus-silicate glass BPSG) ). The sealing with BPSG is preferably accomplished by a subsequent flow process at high temperatures.

Durch das beschriebene Verfahren können geschlossene Kanäle K und Reservoirs R unter Verwendung von nur einem einzigen Substrat erzeugt werden, wobei ein mechanischer Montageprozeß von zwei Komponenten wie im Stand der Technik nicht mehr notwendig ist.Closed channels K and reservoirs R using only one Substrate are generated using a mechanical assembly process of two components as in the prior art no longer necessary is.

Falls erforderlich, kann zur weiteren Stabilisierung bzw. als Schutz auf die Schicht 7 eine weitere Schicht bzw. weitere Schichten aufgebracht werden. Zur Massenproduktion können selbstverständlich eine Vielzahl der in Fig. 3 dargestellten Strukturen gleichzeitig auf einem gemeinsamen Substrat hergestellt und anschließend verzeinzelt werden.If necessary, for further stabilization or as Protection on layer 7 another layer or more Layers are applied. Can mass produce of course, a variety of those shown in Fig. 3 Structures simultaneously on a common substrate are produced and then separated.

Anstelle der in den Fig. 1 bis 3 beschriebenen Ausführungsformen eines Tintenstrahldruckkopfes nach der Erfindung, bei welchem die thermischen Elemente 2 im Bereich des Kanalbodens der Kanäle K angeordnet sind, ist es auch möglich, wie die Fig. 4 und 5 zeigen, das thermische Element 2 innerhalb des Kanales K anzuordnen.Instead of that described in FIGS. 1 to 3 Embodiments of an ink jet print head according to the Invention, in which the thermal elements 2 in the range the channel bottom of the channels K are arranged, it is also possible, as shown in FIGS. 4 and 5, the thermal element 2 to be arranged within the channel K.

Hierfür wird, wie aus Fig. 4 ersichtlich, innerhalb des Substrates 5 eine Widerstandsschicht angeordnet, die anschließend durch Fotolithographie und Ätzung strukturiert wird. Im Ausführungsbeispiel von Fig. 4 ist die Widerstandsschicht des thermischen Elementes 2 auf etwa halber Höhe des Substrates 5 angeordnet. Hierfür wird auf eine in Fig. 4 nicht dargestellte Grundplatte zunächst das Substrat 5 zum Erreichen seiner gewünschten halben Dicke abgeschieden. Anschließend wird die Widerstandsschicht auf das Substrat 5 abgeschieden und strukturiert, wie es in Fig. 5 dargestellt ist. Das thermische Element 2 wird hierbei so gestaltet, daß innerhalb des Kanales K ein dünner Balken 2a hängt, der randseitig über breitere Stege innerhalb des Substrates 5 eingehängt ist. Das thermische Element 2 liegt somit nicht am Substrat 1 an, sondern ist innerhalb des Kanales K aufgehängt, so daß die vom thermischen Element 2 erzeugte Energie vorteilhafterweise ausschließlich an die Tintenflüssigkeit innerhalb des Kanales K abgegeben werden kann. Dies setzt, wie erwähnt, voraus, daß das Substrat 5 in zwei Schritten abgeschieden wird. Beim isotropen Ätzen des Substrates 5 wird das thermische Element 2 selbsttätig freigelegt. Die in Fig. 5, die eine Draufsicht von oben entlang der Schnittlinie E-F in Fig. 4 zeigt, links und rechts des Balkens 2a befindlichen breiteren Stege dienen als Widerstandsanschlüsse und können entweder von oben oder unten kontaktiert werden. Da im Gegensatz zum Ausführungsbeispiel der Fig. 1 und 2 das thermische Element 2 der Tintenflüssigkeit ausgesetzt ist, empfiehlt es sich, das thermische Element 2 aus erosionsfestem Material, z. B. Tantal, herzustellen. Nach dem Abscheiden und Strukturieren der das thermische Element 2 bildenden Widerstandsschicht, wird der zweite Teil des Substrats 5 abgeschieden.For this purpose, as can be seen from FIG. 4, a resistance layer is arranged within the substrate 5, which is then structured by photolithography and etching. In the exemplary embodiment in FIG. 4, the resistance layer of the thermal element 2 is arranged at approximately half the height of the substrate 5. For this purpose, the substrate 5 is first deposited on a base plate (not shown in FIG. 4) in order to achieve its desired half thickness. The resistance layer is then deposited on the substrate 5 and structured, as shown in FIG. 5. The thermal element 2 is designed in such a way that a thin bar 2 a hangs within the channel K, which is suspended on the edge side over wider webs within the substrate 5. The thermal element 2 is thus not in contact with the substrate 1, but is suspended within the channel K, so that the energy generated by the thermal element 2 can advantageously be released exclusively to the ink liquid within the channel K. As mentioned, this presupposes that the substrate 5 is deposited in two steps. When the substrate 5 is isotropically etched, the thermal element 2 is automatically exposed. 5, which shows a plan view from above along the section line EF in FIG. 4, to the left and right of the beam 2a, are used as resistance connections and can be contacted either from above or below. Since, in contrast to the embodiment of FIGS. 1 and 2, the thermal element 2 is exposed to the ink liquid, it is recommended that the thermal element 2 be made of an erosion-resistant material, e.g. B. tantalum. After the deposition and structuring of the resistance layer forming the thermal element 2, the second part of the substrate 5 is deposited.

Im Zusammenhang mit Fig. 3 wurde erläutert, daß die oberen Enden der Kanäle K1, K2, K3 und K4 mit Austrittsöffnungen 15 versehen sind, welche auf den Stirnseiten der jeweiligen Kanäle K1, K2, K3 und K4 angeordnet sind. Die im Ausführungsbeispiel von Fig. 6 ausschnittsweise dargestellten Kanäle K1, K2 eines Tintenstrahldruckkopfes weisen an ihren Kanalenden ebenfalls Austrittsöffnungen 15 auf. Diese Austrittsöffnungen 15 sind jedoch an der oberen Kanalwandung durch kreisrunde Öffnungen gebildet. Die Austrittsöffnungen 15 befinden sich in der Schicht 6, die über dem Substrat 5 angeordnet wird. Damit die Austrittsöffnungen 15 bei dem erwähnten nachfolgenden Abscheiden der Schicht 7 nicht verschlossen werden, sind die Durchmesser der Austrittsöffnungen 15 so groß gewählt, daß zwar die Öffnungen O bei dem isotropen Ätzvorgang sicher verschlossen, die Austrittsöffnungen 15 selbst jedoch sicher nicht verschlossen werden. Die Austrittsöffnungen 15 liegen im Ausführungsbeispiel von Fig. 6 parallel zur Substratoberfläche. Die Austrittsöffnungen 15 sind vorzugsweise größer als 1,0 µm. Zweckmäßigerweise wird der Durchmesser zwischen 5 und 50 µm gewählt. Der wesentliche Vorteil dieser Austrittsöffnungen 15 ist in ihrer kreisrunden Gestalt zu sehen, die das Heraustreten eines kreisrunden Tröpfchens erlaubt, wodurch ein Punkt auf dem Papier mit exakt kreisförmiger Außenkontur gebildet werden kann. Vorteilhaft ist an diesem Ausführungsbeispiel weiter, daß die Austrittsöffnungen 15 nicht nur in einer Reihe, sondern flächig in einer Matrix angeordnet werden können. Des weiteren ist kein Sägen oder Brechen wie im Ausführungsbeispiel von Fig. 3 notwendig, wodurch eine Verunreinigung der Austrittsöffnung 15 vermieden werden kann.In connection with Fig. 3 it was explained that the upper Ends of the channels K1, K2, K3 and K4 with outlet openings 15 are provided, which on the end faces of the respective Channels K1, K2, K3 and K4 are arranged. The in Embodiment of Fig. 6 shown in detail Channels K1, K2 of an inkjet printhead face at their Channel ends also have outlet openings 15. This However, outlet openings 15 are on the upper channel wall formed by circular openings. The outlet openings 15 are located in layer 6, which is above substrate 5 is arranged. So that the outlet openings 15 at the subsequent layer 7 deposition not mentioned are closed, are the diameters of the Outlet openings 15 chosen so large that the openings O the outlet openings are securely closed during the isotropic etching process 15 itself certainly not closed become. The outlet openings 15 are in the Embodiment of Fig. 6 parallel to Substrate surface. The outlet openings 15 are preferably larger than 1.0 µm. The expediently Diameters between 5 and 50 µm selected. The essential The advantage of these outlet openings 15 is their circular shape To see shape, the emergence of a circular Droplets allowed, creating a dot on the paper with exactly circular outer contour can be formed. It is also advantageous in this embodiment that the Outlet openings 15 not only in a row, but can be arranged flat in a matrix. Of Another is not sawing or breaking like in Embodiment of Fig. 3 necessary, whereby a Contamination of the outlet opening 15 can be avoided.

In Fig. 7 ist ausschnittsweise der Tintenstrahldruckkopf im Bereich eines aus Polysilizium bestehenden thermischen Elementes 2 mit einem integrierten Transistor auf Siliziumsubstrat dargestellt. Die bereits bekannten Bezugszeichen stehen für die bekannten Teile. Der besseren Übersichtlichkeit ist auf die Darstellung des Kanales K und der Schichten 6 und 7 verzichtet worden. Das thermische Element 2 aus niedrig dotiertem Polysilizium ist randseitig von hochdotiertem Polysilizium kontaktiert. Die hochdotierten Polysiliziumabschnitte sind mit dem Bezugszeichen 31 markiert. Die beiden hochdotierten Polysiliziumabschnitte 31 sind von als Zuleitungen wirkenden Metallbahnen 30 kontraktiert. Unterhalb des thermischen Elementes 2 sind zwei wärmespeichernde Schichten 20, 21 angeordnet. Unmittelbar unterhalb des thermischen Elementes 2 befindet sich die Schicht 20, die beispielsweise aus TEOS-SiO2 besteht. Unterhalb dieser Schicht 20 befindet sich eine weitere wärmespeichernde Schicht 21, die z. B. aus FOX-SiO2 besteht.7 shows a detail of the inkjet printhead in the region of a thermal element 2 consisting of polysilicon with an integrated transistor on a silicon substrate. The already known reference symbols stand for the known parts. For the sake of clarity, the representation of the channel K and the layers 6 and 7 has been omitted. The thermal element 2 made of low-doped polysilicon is contacted at the edge by highly doped polysilicon. The highly doped polysilicon sections are marked with the reference symbol 31. The two highly doped polysilicon sections 31 are contracted by metal tracks 30 which act as leads. Two heat-storing layers 20, 21 are arranged below the thermal element 2. The layer 20, which consists for example of TEOS-SiO 2 , is located directly below the thermal element 2. Below this layer 20 there is a further heat-storing layer 21 which, for. B. consists of FOX-SiO 2 .

Die Metallbahn 30, die an den rechten hochdotierten Polysiliziumabschnitt 31 anschließt, kontaktiert mit ihrem anderen Ende eine n+-dotierte Schicht, die beispielsweise den Sourceanschluß eines MOS-Transistors bildet. Die Metallbahn 30 kann aus Aluminium oder Wismut bestehen. Die aus Fig. 1 bereits bekannte Schutzschicht 3 besteht aus Plasma-SiO2 und einer Schicht aus Plasma-Si3N4, die sich über die Metallbahn 30 in dem Bereich des MOS-Transistors erstreckt.The metal path 30, which adjoins the right high-doped polysilicon section 31, contacts with its other end an n + -doped layer which, for example, forms the source connection of a MOS transistor. The metal track 30 can consist of aluminum or bismuth. The protective layer 3 already known from FIG. 1 consists of plasma SiO 2 and a layer of plasma Si 3 N 4 , which extends over the metal track 30 in the region of the MOS transistor.

Claims (24)

  1. Ink-jet print head having channels (K; K1; K2...), which are arranged parallel to one another within a substrate (5) and are separated by partitions (10) and are provided with a cover plate (6, 7) and in each case with an outlet opening (15) at one of their ends, and also having a thermal or piezoelectric element (2) assigned to each channel (K; K1, K2...), which element, upon excitation and with ink liquid situated within the channel (K; K1, K2...), causes an ink droplet to be ejected from the outlet opening (15),
    characterized in that the cover plate (6, 7) comprises at least two layers (6, 7), in that a first layer (6) produced by deposition is arranged directly on the channel (K; K1, K2...), which first layer is provided with a multiplicity of openings (O) lying above the channel (K; K1, K2...), and in that a second layer (7) produced by deposition is arranged on the surface of the first layer (6) remote from the channel (K; K1, K2...), which second layer is made of borophosphorus silicate glass or Si3N4 and covers the openings (O).
  2. Ink-jet print head according to Claim 1, characterized in that an electronic drive circuit (A) is integrated within the substrate (5).
  3. Ink-jet print head according to Claim 1 or 2, characterized in that the thermal element (2) is arranged at the bottom of the channel (K; K1, K2...) as a heating resistor formed by a polysilicon layer.
  4. Ink-jet print head according to Claim 3, characterized in that at least one protective layer (3, 4) is arranged between the bottom of the channel and the polysilicon layer.
  5. Ink-jet print head according to Claim 1 or 2, characterized in that the thermal or piezoelectric element (2) is arranged within the channel (K; K1, K2...) and is suspended from the side walls of the channel at the edges, and in that the thermal or piezoelectric element (2) is formed from erosion-resistant material.
  6. Ink-jet print head according to Claim 3 or 4, characterized in that a heat-storing layer (20, 21), preferably a layer made of silicon oxide (SiO2), is arranged on that surface of the chemical element (2) which is opposite to the bottom of the channel.
  7. Ink-jet print head according to Claim 6, characterized in that the heat-storing layer (20, 21) has a thickness > about 1.0 µm.
  8. Ink-jet print head according to Claim 3, 4, 6 or 7, characterized in that at least one protective layer (3, 4) is arranged between the bottom of the channel and the thermal element (2).
  9. Ink-jet print head according to Claim 8, characterized in that the protective layer (3) is composed of plasma oxide with a thickness of preferably 300 nm and plasma nitride with a thickness of preferably 600 nm.
  10. Ink-jet print head according to Claim 8, characterized in that a further protective layer (4), which is preferably composed of sputtered Ta, is arranged over the first protective layer (3).
  11. Ink-jet print head according to one of the preceding claims, characterized in that the channel has channel side walls with a height of about 5 µm to 50 µm.
  12. Ink-jet print head according to one of the preceding claims, characterized in that the channel side walls are formed from plasma oxide, polysiloxanes or polyimide.
  13. Ink-jet print head according to one of the preceding claims, characterized in that the first layer (6) of the cover plate, which first layer is provided with openings (O), is a patterned plasma nitride or polysilicon layer.
  14. Ink-jet print head according to one of the preceding claims, characterized in that the second layer (7) is composed of borophosphorus silicate glass or Si3N4.
  15. Method of manufacturing an ink-jet print head according to one of Claims 1 to 14, having the following method steps:
    provision of a substrate (5), which determines the height of the channel side walls and to which thermal or piezoelectric elements (2) are assigned in the region of the subsequent channels (K; K1, K2...);
    deposition of a first layer (6) on this substrate (5);
    patterning of this first layer (6) with a multiplicity of openings (O) above the subsequent channels (K; K1, K2...);
    isotropic etching of the substrate (5) through the openings (O) in the first layer (6) until the channels (K; K1, K2...) are uncovered;
    deposition of a second layer (7) onto the first layer (6) until the openings (O) are closed off;
    formation of outlet openings (15) in each case at one end of the channels (K; K1, K2...).
  16. Method according to Claim 15, characterized in that the substrate (5) is deposited in the form of plasma oxide, polysiloxanes or polyimide with a thickness of about 5 µm to 50 µm onto a baseplate.
  17. Method according to Claim 15 or 16, characterized in that the first layer (6) is patterned by photolithography with subsequent dry etching.
  18. Method according to one of Claims 15 to 17, characterized in that the substrate (5) is composed of plasma oxide or polysiloxanes and the first layer (6) is composed of polysilicon or silicon nitride, and the first layer (6) is patterned by photolithography with subsequent isotropic etching, dry using a fluorine-containing plasma in HF vapour or wet using BHF.
  19. Method according to one of Claims 15 to 17, characterized in that the substrate (5) is composed of polyimide or another organic material, and the first layer (6) is patterned by photolithography with subsequent isotropic etching by means of an O2 plasma.
  20. Method according to one of Claims 15 to 19, characterized in that a deposition with plasma Si3N4 or a CVD deposition of borophosphorus silicate glass is effected as the second layer.
  21. Method according to Claim 20, characterized in that after the second layer (7) has been deposited onto the first layer (6), a flow process at high temperatures is carried out.
  22. Method according to one of Claims 15 to 21, characterized in that, in a first step, the substrate (5) is deposited approximately up to half of the desired thickness of the substrate (5), in that, in a subsequent step, a resistive layer is applied and this resistive layer is patterned, and in that, in a further step, the second half of the substrate is deposited onto the resistive layer.
  23. Method according to Claim 22, characterized in that the resistive layer is an erosion-resistant layer.
  24. Method according to one of Claims 15 to 21, characterized in that an opening (A) is arranged in the first layer (6) in each case at one end of the channels, which opening is large enough that it is not closed off during the subsequent process of depositing the second layer (7), and these openings (A) serve as outlet openings (15).
EP96944566A 1995-09-29 1996-09-27 Ink-jet printing head and method of manufacturing it Expired - Lifetime EP0852539B1 (en)

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DE19536429A DE19536429A1 (en) 1995-09-29 1995-09-29 Ink jet printhead and method of making such an ink jet printhead
DE19536429 1995-09-29
PCT/DE1996/001858 WO1997011849A2 (en) 1995-09-29 1996-09-27 Ink-jet printing head and method of manufacturing it

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KR19990063906A (en) 1999-07-26
WO1997011849A3 (en) 1997-06-05
US6099106A (en) 2000-08-08
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US6397467B1 (en) 2002-06-04
DE59602566D1 (en) 1999-09-02

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