EP0852539B1 - Ink-jet printing head and method of manufacturing it - Google Patents
Ink-jet printing head and method of manufacturing it Download PDFInfo
- Publication number
- EP0852539B1 EP0852539B1 EP96944566A EP96944566A EP0852539B1 EP 0852539 B1 EP0852539 B1 EP 0852539B1 EP 96944566 A EP96944566 A EP 96944566A EP 96944566 A EP96944566 A EP 96944566A EP 0852539 B1 EP0852539 B1 EP 0852539B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- ink
- channel
- print head
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000007641 inkjet printing Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000000206 photolithography Methods 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000001312 dry etching Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 80
- 238000000151 deposition Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000005368 silicate glass Substances 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 3
- -1 polysiloxanes Polymers 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000007639 printing Methods 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- VRZFDJOWKAFVOO-UHFFFAOYSA-N [O-][Si]([O-])([O-])O.[B+3].P Chemical group [O-][Si]([O-])([O-])O.[B+3].P VRZFDJOWKAFVOO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S29/00—Metal working
- Y10S29/016—Method or apparatus with etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49401—Fluid pattern dispersing device making, e.g., ink jet
Definitions
- the invention relates to an inkjet printhead arranged parallel to each other within a substrate and channels separated by partitions, which with a Cover plate and at one of its ends with one Exit opening are provided, as well as with each Channel assigned thermal or piezoelectric Element which, when excited and within the channel located ink liquid an ejection of a Causes ink droplets from the orifice, as well as a Method of making one Inkjet printhead.
- Inkjet printheads are now widely used in inkjet printers used.
- the inkjet print head is working mostly according to the known and for example in DE 30 12 698 C2 described drop-on-demand method, or DoD method for short called.
- This is used to create a point a medium to be printed, e.g. B. paper, from a channel an ink droplet is ejected from the inkjet printhead, as soon as a thermal or piezoelectric assigned to the channel Element with a suitable current pulse a control circuit is controlled.
- the suggestion is made e.g. B. by a current pulse of 2 ⁇ s to 10 ⁇ s duration, with a thermal energy of about 15 to 50 ⁇ joules is released.
- a character e.g. B. a letter
- the thermal or piezoelectric elements of the parallel adjacent channels in a suitable manner from the Drive circuit with current pulses are supplied so that the points on paper for that letter visible through the impact of appropriate drops of ink become.
- Heating resistors can be arranged on or in the duct.
- the Channels are often etched in by orientation a silicon substrate.
- the heating resistors can attached to the channels by bonding.
- Cover plate can be used for example a glass plate by anodic bonding on the channel plate and so that is applied in the first substrate.
- the channels of the Inkjet printhead are also formed by the fact that a first substrate, which is provided with heating resistors, a cover plate provided with partitions is adjusted. Instead of the cover plate provided with partition walls also a flat cover plate on the first substrate be stuck on if the mentioned in the first substrate Channels each in the form of channel floors and two Channel side walls are already incorporated. The glued cover plate then forms the in these channels Sewer ceiling.
- DE-A-3 917 434 discloses a multilayer ink print head with ink channels created by selective etching.
- the ink print head points for receiving the ink channels and / or the drive chambers of the Transducer areas on a substrate layer with a cover layer arranged above.
- the ink channels are generated by selective etching of the substrate layer through the openings.
- the Openings are dimensioned so that after filling the ink channels with Ink the ink closes the openings capillary.
- the openings of the cover layer are also closed with a glued-on lid.
- the invention has for its object a Inkjet printhead and a method of making one Specify inkjet printhead, which is a complicated Adjustment and a gluing or bonding of two separately manufactured substrates is not necessary.
- the cover plate consists of at least two layers that immediately on the channel one with a variety of over the channel arranged first layer provided openings, and that on the surface facing away from the channel of the first Layer is arranged a second layer, the openings covers.
- the Channels K1, K2, K3 and K4 can have a total of one, for example Have a length of 1 cm and end at the bottom in a reservoir R, which is used to hold ink liquid is provided.
- This reservoir R can with support points S be provided, which the floor and ceiling wall of the Reservoirs R to increase the stability with each other connect.
- a feed channel can be placed in the reservoir R. Z open, over which the ink liquid from a Storage container is fed.
- Each of the channels K1, K2, K3 and K4 has an area an assigned thermal element 2, in order to known DOD methods when stimulated by a suitable current pulse an ink droplet from the front Eject end of each channel K1, K2, K3 and K4.
- a suitable current pulse an ink droplet from the front Eject end of each channel K1, K2, K3 and K4.
- FIG. 3 illustrated inkjet printhead on the section line S1 to separate.
- the ink jet printhead is along in Figures 1 and 2 the section line A-B and C-D shown in Figure 3 Area of the thermal element 2 is shown enlarged.
- the thermal element 2 is, for example, one on one upper main surface of a substrate 1 arranged beams Polysilicon.
- the bar extends orthogonally to Longitudinal direction of the channel K, has a width of about 1.5 to 2 ⁇ m and a length that is slightly shorter than the width of a Channel K is.
- the thermal elements 2 of each Channels K1, K2, K3, K4 are, as shown in FIG. 3, preferably arranged side by side to the from the respective channels K1, K2, K3, K4 emerging Ink droplets when the respective thermal is excited Element 2 with the same energy and thus with same speed from the outlet openings that in FIG. 3 is designated by the reference number 15, let it come out.
- the thermal element 2 serves as a heating resistance zone.
- the substrate 1 may e.g. B. contain a complete integrated drive circuit on a silicon substrate.
- a sufficiently thick heat-storing layer is preferably to be arranged below the thermal element 2, which prevents the main part of the thermal energy generated in the thermal element 2 from flowing off when a current pulse is applied in the substrate 1 and the liquid ("ink") in the channel K not being reached .
- the heat storage layer is e.g. B. SiO 2 with a thickness greater than or equal to about 1.0 microns.
- a field oxide preferably with an additional layer of plasma oxide or TEOS, can be used.
- a protective layer 3 On the substrate 1 is a protective layer 3, the z. B. from 300 nm plasma oxide and 600 nm plasma nitride can exist arranged.
- This protective layer 3 can be the upper main surface completely cover the substrate 1 and serves for protection of the thermal element 2 from erosion by the imploding bubbles in the ink liquid. Furthermore can this protective layer 3 also to protect an inside of the substrate 1 integrated control circuit before mobile Ions that may be in the ink liquid can be serve.
- a further protective layer 4, which protects against erosion, is preferably provided in the area of the thermal element 2.
- This protective layer 4 extends, as can be seen from FIGS. 2 and 3, completely beyond the outer contour of the thermal element 2 and additionally beyond the width of the channel K.
- This additional protective layer 4 can, for. B. consist of sputtered tantalum (Ta), which is structured by photolithography and a CF 4 / O 2 plasma dry etching.
- a further substrate 5 with a thickness of preferably 5 to 50 ⁇ m is arranged over the substrate 1 thus prepared on the main surface.
- This substrate 5 determines the depth of the channels K and thus the height of the side walls of the channel K.
- the substrate 5 can, for. B. consist of plasma oxide (SiO 2 ), so-called spin-on glasses (SOG), polysiloksanes or polyimide.
- a first layer 6, which has a plurality of openings O is provided, applied by deposition.
- This layer 6 can e.g. B. consist of plasma nitride or polysilicon and have a thickness of approximately 1 to 3 ⁇ m.
- the openings O, the by photolithography and then dry etching can be formed, are arranged in the layer 6, that in a subsequent isotropic etching process for the Channels K1, K2, K3, K4 and the reservoir R necessary Cavities are formed in the substrate 5.
- the openings O have for example a diameter of 1 ⁇ m and are one row in the area of channels K1, K2, K3 and K4 with each other and lie in the area of the reservoir, except for the mentioned support points S, in a large number side by side and with each other.
- a layer for the Feed channel Z are etched out of Fig. 3.
- the channels K1, K2, K3 and K4 as well as the reservoir R are etched by an isotropic etching, which must be sufficiently selective to the layers 3, 4 and 6 mentioned.
- the isotropic etching can be carried out dry with a fluorine-containing plasma, in HF steam or wet with BHF (buffered HF).
- the isotropic etching can be carried out using an O 2 plasma.
- a second layer 7 is applied to the layer 6, e.g. B. again by deposition.
- This layer 7 should preferably be sufficiently non-compliant. A complete closure of the openings O is thereby facilitated.
- the layer 7 is deposited until the openings O are closed (for example plasma Si 3 N 4 deposition) or is ended beforehand (for example CVD deposition of boron-phosphorus-silicate glass BPSG) ).
- the sealing with BPSG is preferably accomplished by a subsequent flow process at high temperatures.
- thermo elements 2 in the range the channel bottom of the channels K are arranged, it is also possible, as shown in FIGS. 4 and 5, the thermal element 2 to be arranged within the channel K.
- a resistance layer is arranged within the substrate 5, which is then structured by photolithography and etching.
- the resistance layer of the thermal element 2 is arranged at approximately half the height of the substrate 5.
- the substrate 5 is first deposited on a base plate (not shown in FIG. 4) in order to achieve its desired half thickness.
- the resistance layer is then deposited on the substrate 5 and structured, as shown in FIG. 5.
- the thermal element 2 is designed in such a way that a thin bar 2 a hangs within the channel K, which is suspended on the edge side over wider webs within the substrate 5.
- the thermal element 2 is thus not in contact with the substrate 1, but is suspended within the channel K, so that the energy generated by the thermal element 2 can advantageously be released exclusively to the ink liquid within the channel K.
- the thermal element 2 is automatically exposed. 5, which shows a plan view from above along the section line EF in FIG. 4, to the left and right of the beam 2a, are used as resistance connections and can be contacted either from above or below. Since, in contrast to the embodiment of FIGS. 1 and 2, the thermal element 2 is exposed to the ink liquid, it is recommended that the thermal element 2 be made of an erosion-resistant material, e.g. B. tantalum. After the deposition and structuring of the resistance layer forming the thermal element 2, the second part of the substrate 5 is deposited.
- outlet openings 15 at the subsequent layer 7 deposition not mentioned are closed, are the diameters of the Outlet openings 15 chosen so large that the openings O the outlet openings are securely closed during the isotropic etching process 15 itself certainly not closed become.
- the outlet openings 15 are in the Embodiment of Fig. 6 parallel to Substrate surface.
- the outlet openings 15 are preferably larger than 1.0 ⁇ m.
- the expediently Diameters between 5 and 50 ⁇ m selected.
- the essential The advantage of these outlet openings 15 is their circular shape To see shape, the emergence of a circular Droplets allowed, creating a dot on the paper with exactly circular outer contour can be formed.
- the Outlet openings 15 not only in a row, but can be arranged flat in a matrix. Of Another is not sawing or breaking like in Embodiment of Fig. 3 necessary, whereby a Contamination of the outlet opening 15 can be avoided.
- thermal element 2 consisting of polysilicon with an integrated transistor on a silicon substrate.
- the already known reference symbols stand for the known parts. For the sake of clarity, the representation of the channel K and the layers 6 and 7 has been omitted.
- the thermal element 2 made of low-doped polysilicon is contacted at the edge by highly doped polysilicon.
- the highly doped polysilicon sections are marked with the reference symbol 31.
- the two highly doped polysilicon sections 31 are contracted by metal tracks 30 which act as leads.
- Two heat-storing layers 20, 21 are arranged below the thermal element 2.
- the layer 20, which consists for example of TEOS-SiO 2 is located directly below the thermal element 2. Below this layer 20 there is a further heat-storing layer 21 which, for. B. consists of FOX-SiO 2 .
- the metal track 30 can consist of aluminum or bismuth.
- the protective layer 3 already known from FIG. 1 consists of plasma SiO 2 and a layer of plasma Si 3 N 4 , which extends over the metal track 30 in the region of the MOS transistor.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
Die Erfindung betrifft einen Tintenstrahldruckkopf mit innerhalb eines Substrates parallel zueinander angeordneten und durch Trennwände getrennten Kanälen, welche mit einer Deckelplatte und an einem ihrer Enden jeweils mit einer Austrittsöffnung versehen sind, sowie mit einem einem jeden Kanal zugeordneten thermischen oder piezoelektrischen Element, welches bei Anregung und bei innerhalb des Kanales befindlicher Tintenflüssigkeit ein Ausstoßen eines Tintentröpfchens aus der Austrittsöffnung bewirkt, sowie ein Verfahren zum Herstellen eines solchen Tintenstrahldruckkopfes.The invention relates to an inkjet printhead arranged parallel to each other within a substrate and channels separated by partitions, which with a Cover plate and at one of its ends with one Exit opening are provided, as well as with each Channel assigned thermal or piezoelectric Element which, when excited and within the channel located ink liquid an ejection of a Causes ink droplets from the orifice, as well as a Method of making one Inkjet printhead.
Tintenstrahldruckköpfe werden heute in großem Umfang in Tintenstrahldruckern
eingesetzt. Der Tintenstrahldruckkopf arbeitet
meist nach dem bekannten und zum Beispiel in DE 30 12
698 C2 beschriebenen Drop-On-Demand-Verfahren, kurz DoD-Verfahren
genannt. Hierbei wird zum Erzeugen eines Punktes auf
einem zu bedruckenden Medium, z. B. Papier, aus einem Kanal
des Tintenstrahldruckkopfes ein Tintentröpfchen ausgestoßen,
sobald ein dem Kanal zugeordnetes thermisches oder piezoelektrisches
Element mit einem hierfür geeigneten Stromimpuls aus
einer Ansteuerschaltung angesteuert wird. Die Anregung erfolgt
z. B. durch einen Stromimpuls von 2µs bis 10µs Dauer,
wobei eine thermische Energie von etwa 15 bis 50 µ Joule
freigesetzt wird. Diese Aufheizung führt zur lokalen Verdampfung
der Tintenflüssigkeit (Blasenbildung), wobei die Flüssigkeitssäule
aus der entsprechenden Kanalaustrittsöffnung
gedrängt wird, ohne zunächst anzureißen. Nach Beendigung des
Stromimpulses kollabiert die Blase über dem thermischen Element.
Als Folge wird ein Teil der Flüssigkeitssäule zurückgezogen,
wobei sich ein Tintentropfen außerhalb der Kanalaustrittsöffnungen
abschnürt und sich entsprechend dem Impulserhaltungssatz
weiterbewegt. Dieses Tintentröpfchen erzeugt auf
dem Papier einen im Falle von schwarzer Tinte schwarzen
Druckpunkt. Die typische Emmisionsfrequenz liegt bei etwa 5
kHz.Inkjet printheads are now widely used in inkjet printers
used. The inkjet print head is working
mostly according to the known and for example in
Zur Erzeugung eines Zeichens, z. B. eines Buchstabens, müssen die thermischen oder piezoelektrischen Elemente der parallel nebeneinander liegenden Kanäle in geeigneter Weise von der Ansteuerschaltung mit Stromimpulsen so versorgt werden, daß die für diesen Buchstaben notwendigen Punkte auf dem Papier durch das Aufprallen entsprechender Tintentropfchen sichtbar werden.To create a character, e.g. B. a letter the thermal or piezoelectric elements of the parallel adjacent channels in a suitable manner from the Drive circuit with current pulses are supplied so that the points on paper for that letter visible through the impact of appropriate drops of ink become.
Aufgrund der sehr kleinen Kanaldurchmesser und engen Rasterabstände zwischen den Kanälen (bzw. Düsen) werden zur Herstellung von Tintenstrahldruckköpfen aus der Halbleitertechnologie bekannte Bearbeitungsverfahren für Feinstrukturen eingesetzt. Beispiele solcher Bearbeitungsverfahren sind in EP 0 359 417 A2, EP 0 434 946 A2 sowie in der Veröffentlichung IEEE Transactions on Electron Devices, Volume 26, 1979, Seite 1918 beschrieben. Im Gegensatz zur Fertigung von integrierten Halbleiterschaltungen, die auf einem einzigen Substrat gebildet werden, sind bei den bekannten Verfahren zur Herstellung von Tintenstrahldruckköpfen stets zwei verschiedene Substrate notwendig. Auf einem Substrat werden Trennwände zwischen Kanälen gebildet und diese mit einer aus einem zweiten Substrat hergestellten Deckelplatte, die separat gefertigt wird, verschlossen.Due to the very small channel diameter and narrow Grid distances between the channels (or nozzles) become Manufacture of inkjet printheads from the Semiconductor technology known processing methods for Fine structures used. Examples of such Processing methods are in EP 0 359 417 A2, EP 0 434 946 A2 as well as in the publication IEEE Transactions on Electron Devices, Volume 26, 1979, page 1918. in the Contrary to the production of integrated Semiconductor circuits based on a single substrate are formed in the known methods for Manufacturing inkjet printheads always two different substrates necessary. Be on a substrate Partitions formed between channels and these with one a second substrate manufactured cover plate, the is manufactured separately, closed.
Bei den bekannten Verfahren können zur thermischen Anregung Heizwiderstände am oder im Kanal angeordnet werden. Die Kanäle werden häufig durch orientierungsabhängiges Ätzen in einem Siliziumsubtrat gebildet. Die Heizwiderstände können durch Bonden an den Kanälen befestigt werden. Als Deckelplatte kann beispielsweise eine Glasplatte verwendet werden, die durch anodisches Bonden auf der Kanalplatte und damit im ersten Substrat aufgebracht wird.In the known methods for thermal excitation Heating resistors can be arranged on or in the duct. The Channels are often etched in by orientation a silicon substrate. The heating resistors can attached to the channels by bonding. As Cover plate can be used for example a glass plate by anodic bonding on the channel plate and so that is applied in the first substrate.
Wie aus EP 0 443 722 A2 bekannt, können die Kanäle des Tintenstrahldruckkopfes auch dadurch gebildet werden, daß auf ein erstes Substrat, das mit Heizwiderständen versehen ist, eine mit Trennwänden versehene Deckelplatte justiert wird. Anstelle der mit Trennwänden versehenen Deckelplatte kann auch eine ebene Deckelplatte auf dem ersten Substrat aufgeklebt werden, wenn in das erste Substrat die erwähnten Kanäle jeweils in Form von Kanalböden und zwei Kanalseitenwandungen bereits eingearbeitet sind. Die aufgeklebte Deckelplatte bildet dann bei diesen Kanälen die Kanaldecke. As known from EP 0 443 722 A2, the channels of the Inkjet printhead are also formed by the fact that a first substrate, which is provided with heating resistors, a cover plate provided with partitions is adjusted. Instead of the cover plate provided with partition walls also a flat cover plate on the first substrate be stuck on if the mentioned in the first substrate Channels each in the form of channel floors and two Channel side walls are already incorporated. The glued cover plate then forms the in these channels Sewer ceiling.
Die DE-A- 3 917 434 offenbart einen mehrschichtig aufgebauten Tintendruckkopf mit durch selektives Ätzen erzeugten Tintenkanälen. Der Tintendruckkopf weist zur Aufnahme der Tintenkanäle und/oder der Antriebskammern der Wandlerbereiche eine Substratschicht mit darüber angeordneter Deckschicht auf. In der Deckschicht sind Öffnungen entsprechend dem Verlauf der zu erzeugenden Tintenversorgungskanäle angeordnet. Die Tintenkanäle werden durch selektives Ätzen der Substratschicht durch die Öffnungen erzeugt. Die Öffnungen sind dabei so dimensioniert, daß nach Füllen der Tintenkanäle mit Tinte die Tinte die Öffnungen kapillarisch verschließt. Bei einer Ausführungsform werden nach Ausätzen der Tintenkanäle die Öffnungen der Deckschicht mit einem aufgeklebten Deckel verschlossen. DE-A-3 917 434 discloses a multilayer ink print head with ink channels created by selective etching. The ink print head points for receiving the ink channels and / or the drive chambers of the Transducer areas on a substrate layer with a cover layer arranged above. There are openings in the cover layer corresponding to the course of the generating ink supply channels arranged. The ink channels are generated by selective etching of the substrate layer through the openings. The Openings are dimensioned so that after filling the ink channels with Ink the ink closes the openings capillary. In one embodiment After etching out the ink channels, the openings of the cover layer are also closed with a glued-on lid.
Problematisch bei diesen bekannten Verfahren zum Herstellen integrierbarer Tintenstrahldruckköpfe ist die zwingende Verwendung von zwei miteinander zu verbindenden Substraten. Dies erfordert eine komplizierte Justage, wobei die feinen Kanäle bei der Verklebung der beiden Substrate vor Verunreinigungen geschützt werden müssen, was zusätzlichen Aufwand bedeutet.Problematic with these known methods of manufacture integrable inkjet printheads is the imperative Use of two substrates to be joined together. This requires a complicated adjustment, the fine Channels before gluing the two substrates Contamination must be protected, which additional Effort means.
Der Erfindung liegt die Aufgabe zugrunde, einen Tintenstrahldruckkopf und ein Verfahren zum Herstellen eines Tintenstrahldruckkopfes anzugeben, bei dem eine komplizierte Justage und ein Verkleben oder Bonden von zwei separat hergestellten Substraten nicht notwendig ist.The invention has for its object a Inkjet printhead and a method of making one Specify inkjet printhead, which is a complicated Adjustment and a gluing or bonding of two separately manufactured substrates is not necessary.
Diese Aufgabe wird für einen Tintenstrahldruckkopf der eingangs genannten Art dadurch gelöst, daß die Deckelplatte aus mindestens zwei Schichten besteht, daß unmittelbar auf dem Kanal eine mit einer Vielzahl von über den Kanal liegenden Öffnungen versehene erste Schicht angeordnet ist, und daß auf der dem Kanal abgewandten Oberfläche der ersten Schicht eine zweite Schicht angeordnet ist, die die Öffnungen abdeckt. This task is for an inkjet printhead type mentioned solved in that the cover plate consists of at least two layers that immediately on the channel one with a variety of over the channel arranged first layer provided openings, and that on the surface facing away from the channel of the first Layer is arranged a second layer, the openings covers.
Weiterbildungen des Tintenstrahldruckkopfes sind in den
Unteransprüchen 2 bis 14 angegeben.Further developments of the inkjet print head are in the
Ein Verfahren zum Herstellen eines solchen Tintenstrahldruckkopfes weist folgende Verfahrensschritte auf:
- Bereitstellen eines die Höhe der Kanalseitenwände bestimmenden Substrates, welchem thermische oder piezoelektrische Elemente im Bereich der späteren Kanäle zugeordnet sind;
- Abscheidung einer ersten Schicht auf diesem Substrat;
- Strukturierung dieser ersten Schicht mit einer Vielzahl von Öffnungen oberhalb der späteren Kanäle;
- isotrope Ätzung des Substrates durch die Öffnungen in der ersten Schicht solange, bis die Kanäle freigelegt sind;
- Abscheidung einer zweiten Schicht auf die erste Schicht solange bis die Öffnungen verschlossen sind;
- Bildung von Austrittsöffnungen an jeweils einem Ende der Kanäle.
- Providing a substrate which determines the height of the channel side walls and to which thermal or piezoelectric elements in the region of the later channels are assigned;
- Depositing a first layer on this substrate;
- Structuring of this first layer with a large number of openings above the later channels;
- isotropic etching of the substrate through the openings in the first layer until the channels are exposed;
- Depositing a second layer on the first layer until the openings are closed;
- Formation of outlet openings at each end of the channels.
Weiterbildungen dieses Herstellungsverfahrens sind in den Ansprüchen 16 bis 24 angegeben.Further developments of this manufacturing process are in the Claims 16 to 24 specified.
Der Tintentrahldruckkopf nach der Erfindung und dessen Herstellverfahren wird nachfolgend im Zusammenhang mit Ausführungsbeispielen näher erläutert. In den Ausführungsbeispielen wird der Tintenstrahldruckkopf und dessen Herstellverfahren anhand eines Druckkopfes mit thermischer Anregung beschrieben. Es ist jedoch genauso gut möglich, einen Druckkopf mit piezoelektrischer Anregung herzustellen. Die Erfindung bezieht sich daher auch auf solche Druckköpfe mit piezoelektrischer Anregung. Es zeigen:
Figur 1- Eine ausschnittsweise Schnittdarstellung durch einen Tintenstrahlkopf im Bereich des thermische Elementes eines Kanales in Längserstreckung des Kanales,
Figur 2- eine ausschnittsweise Schnittdarstellung durch den
Tintenstrahlkopf von
Figur 1 im Bereich des thermischen Elementes, jedoch orthogonal zur Längserstreckung des Kanales, Figur 3- eine Draufsicht auf die Oberseite des in den
Figuren 1 und 2 dargestellten Tintenstrahldruckkopfes, bei welchem die zweite Schicht der Deckelplatte noch nicht aufgebracht ist, - Figur 4
- eine ähnliche Darstellung wie
Figur 1, jedoch mit innerhalb des Kanalraumes angeordneten thermischen Element, Figur 5- eine Schnittdarstellung des Tintenstrahldruckkopfes von Figur 4 entlang der dortigen Schnittlinie E-F,
Figur 6- die ausschnittsweise Darstellung von zwei Kanalenden eines Tintenstrahldruckkopfes mit orthogonal zur Längserstreckung der Kanäle angeordneten Austrittsöffnungen,
- Figur 7
- eine ausschnittsweise schematische Darstellung des Tintenstrahldruckkopfes mit integriertem Transistor auf Siliziumsubstrat.
- Figure 1
- A sectional view through an ink jet head in the region of the thermal element of a channel in the longitudinal extension of the channel,
- Figure 2
- 2 shows a sectional view through the ink jet head from FIG. 1 in the area of the thermal element, but orthogonal to the longitudinal extent of the channel,
- Figure 3
- 1 shows a plan view of the top of the ink jet print head shown in FIGS. 1 and 2, in which the second layer of the cover plate has not yet been applied,
- Figure 4
- 1 shows a representation similar to FIG. 1, but with a thermal element arranged inside the channel space,
- Figure 5
- 3 shows a sectional illustration of the ink jet print head from FIG. 4 along the section line EF there,
- Figure 6
- 2 shows a section of two channel ends of an ink jet print head with outlet openings arranged orthogonally to the longitudinal extent of the channels,
- Figure 7
- a fragmentary schematic representation of the inkjet printhead with an integrated transistor on a silicon substrate.
In den nachfolgenden Figuren bezeichnen, sofern nicht anders angegeben, gleiche Bezugszeichen gleiche Teile mit gleicher Bedeutung.Designate in the following figures, unless otherwise indicated, same reference numerals, same parts with the same Meaning.
Der Aufbau eines möglichen Ausführungsbeispieles eines Tintenstrahldruckkopfes
nach der Erfindung wird aus einer
Zusammenschau der Figuren 1, 2 und 3 deutlich. Der
Tintenstrahldruckkopf ist in Figur 3 in Draufsicht
schematisch ausschnittsweise dargestellt, wobei die im
einzelnen noch zu erläuternde zweite Schicht 7 einer
Deckelplatte der Deutlichkeit halber abgenommen ist. Der
Tintenstrahldruckkopf verfügt über eine Vielzahl von parallel
nebeneinander liegenden Kanälen K1, K2, K3, K4, die
beispielsweise eine Breite von 50µm aufweisen können.
Zwischen den einzelnene Kanälen K1, K2 bzw. K2, K3 oder K3,
K4 sind Trennwände 10 mit einer Breite von beispielsweise
30µm angeordnet. Die Kanäle K1, K2, K3 und K4 sind an ihren
in Figur 3 oben gezeichneten Enden noch verschlossen. Die
Kanäle K1, K2, K3 und K4 können insgesamt beispielsweise eine
Länge von 1 cm aufweisen und enden an ihrer Unterseite in
einem Reservoir R, das zur Aufnahme von Tintenflüssigkeit
vorgesehen ist. Dieses Reservoir R kann mit Stützstellen S
versehen sein, welche die Boden- und Deckenwand des
Reservoirs R zur Erhöhung der Stabilität miteinander
verbinden. Zusätzlich kann in das Reservoir R ein Zuführkanal
Z münden, über welchen die Tintenflüssigkeit von einem
Vorratsbehälter zugeführt wird.The structure of a possible embodiment of an ink jet print head
according to the invention from a
Summary of Figures 1, 2 and 3 clearly. Of the
Inkjet printhead is in plan view in Figure 3
shown schematically in sections, the im
individual second layer 7 of a still to be explained
Cover plate is removed for clarity. Of the
Inkjet printhead has a variety of parallel
adjacent channels K1, K2, K3, K4, the
for example, can have a width of 50 µm.
Between the individual channels K1, K2 or K2, K3 or K3,
K4 are
Jeder der Kanäle K1, K2, K3 und K4 weist einen Bereich mit
einem zugeordneten thermischen Element 2 auf, um nach dem an
sich bekannten DOD-Verfahren bei Anregung durch einen
geeigneten Stromimpuls ein Tintentröpfchen aus dem vorderen
Ende des jeweiligen Kanales K1, K2, K3 und K4 auszustoßen.
Hierfür ist in einem Herstellschritt der in Figur 3
dargestellte Tintenstrahldruckkopf an der Schnittlinie S1
aufzutrennen. Die kann z. B. bei der Vereinzelung der
integriert herstellbaren Tintenstrahlköpfe durch Sägen oder
Ansägen, Anätzen oder Brechen entlang der Schnittlinie S1
erfolgen.Each of the channels K1, K2, K3 and K4 has an area
an assigned
Der Tintenstrahldruckkopf ist in den Figuren 1 und 2 entlang
der in Figur 3 dargestellten Schnittlinie A-B und C-D im
Bereich des thermischen Elementes 2 vergrößert dargestellt. The ink jet printhead is along in Figures 1 and 2
the section line A-B and C-D shown in Figure 3
Area of the
Das thermische Element 2 ist beispielsweise ein auf einer
oberen Hauptfläche eines Substrates 1 angeordneter Balken aus
Polysilizium. Der Balken erstreckt sich orthogonal zur
Längsrichtung des Kanales K, hat etwa eine Breite von 1,5 bis
2µm und eine Länge, die etwas kürzer als die Breite eines
Kanales K ist. Die thermischen Elemente 2 der einzelnen
Kanäle K1, K2, K3, K4 sind, wie in Figur 3 dargestellt,
vorzugsweise nebeneinander angeordnet, um die aus den
jeweiligen Kanälen K1, K2, K3, K4 heraustretenden
Tintentröpfchen bei Anregung des jeweiligen thermischen
Elementes 2 mit jeweils gleicher Energie und damit mit
gleicher Geschwindigkeit aus den Austrittsöffnungen, die in
Figur 3 mit den Bezugszeichen 15 bezeichnet sind,
heraustreten zu lassen.The
Das thermische Element 2 dient als Heizwiderstandszone. Das
Substrat 1 kann z. B. eine vollständige integrierte
Ansteuerschaltung auf einem Siliziumsubstrat enthalten.
Unterhalb des thermischen Elementes 2 ist vorzugsweise eine
ausreichend dicke wärmespeichernde Schicht anzuordnen, welche
verhindert, daß der Hauptteil der im thermischen Element 2
erzeugten thermischen Energie bei Anlegung eines
Stromimpulses im Substrat 1 abfließt und die Flüssigkeit
("Tinte") im Kanal K nicht ereicht wird. Die wärmespeichernde
Schicht ist z. B. SiO2 mit einer Dicke größer gleich etwa 1,0
µm. Bei der Integration mit einer elektronischen
Ansteuerschaltung auf einem Siliziumsubstrat kann hierfür z.
B. ein Feldoxid, vorzugsweise mit einer Zusatzschicht aus
Plasmaoxid oder TEOS, verwendet werden.The
Auf dem Substrat 1 ist eine Schutzschicht 3, die z. B. aus
300 nm Plasmaoxid und 600 nm Plasmanitrid bestehen kann,
angeordnet. Diese Schutzschicht 3 kann die obere Hauptfläche
des Substrates 1 vollständig überdecken und dient zum Schutz
des thermischen Elementes 2 vor Erosion durch die
implodierenden Blasen in der Tintenflüssigkeit. Des weiteren
kann diese Schutzschicht 3 auch zum Schutz einer innerhalb
des Substrates 1 integrierten Ansteuerschaltung vor mobilen
Ionen, die möglicherweise in der Tintenflüssigkeit enthalten
sein können, dienen.On the
Vorzugsweise ist im Bereich des thermischen Elementes 2 eine
weitere Schutzschicht 4 vorgesehen, die vor Erosion schützt.
Diese Schutzschicht 4 erstreckt sich, wie aus Figur 2 und 3
ersichtlich, vollständig über die Außenkontur des thermischen
Elementes 2 und zusätzlich über die Breite des Kanales K
hinaus. Diese weitere Schutzschicht 4 kann z. B. aus
gesputterten Tantal (Ta) bestehen, welches durch
Fotolithographie und eine CF4/O2-Plasmatrockenätzung
strukturiert wird.A further protective layer 4, which protects against erosion, is preferably provided in the area of the
Über das so an der Hauptfläche vorbereitete Substrat 1 ist
ein weiteres Substrat 5 mit einer Dicke von vorzugsweise 5
bis 50µm angeordnet. Dieses Substrat 5 bestimmt die Tiefe der
Kanäle K und damit die Höhe der Seitenwände des Kanales K.
Das Substrat 5 kann z. B. aus Plasmaoxid (SiO2),
sogenannenten Spin-On-Gläsern (SOG), Polysiloksane oder
Polyimid bestehen.A
Auf das Substrat 5, welches zunächst unstrukturiert ist, wird
eine erste Schicht 6, die mit einer Vielzahl von Öffnungen O
versehen ist, durch Abscheidung aufgebracht. Diese Schicht 6
kann z. B. aus Plasmanitrid oder Polysilizium bestehen und
eine Dicke von etwa 1 bis 3µm aufweisen. Die Öffnungen O, die
durch Fotolithographie und anschließendem Trockenätzen
gebildet werden können, sind so in der Schicht 6 angeordnet,
daß in einem nachfolgenden isotropen Ätzvorgang die für die
Kanäle K1, K2, K3, K4 und das Reservoir R notwendigen
Hohlräume im Substrat 5 gebildet werden. Die Öffnungen O
weisen beispielsweise einen Durchmesser von 1 µm auf und sind
zueinander im Bereich der Kanäle K1, K2, K3 und K4 einreihig
untereinander und liegen im Bereich des Reservoirs, bis auf
die erwähnten Stützstellen S, in einer Vielzahl nebeneinander
und untereinander. On the
Des weiteren kann in der Schicht 6 ein Fenster für den Zuführungskanal Z aus Fig. 3 herausgeätzt werden.Furthermore, a layer for the Feed channel Z are etched out of Fig. 3.
Die Kanäle K1, K2, K3 und K4 sowie das Reservoir R (vgl. Fig.
3) werden durch eine isotrope Ätzung, die ausreichend
selektiv zu den erwähnten Schichten 3, 4 und 6 sein muß,
geätzt. Für den Fall, daß das Substrat 5 aus Plasmaoxid oder
SOG und die Schicht 6 aus Polysilizium oder Siliziumnitrid
besteht, kann die isotrope Ätzung trocken mit einem
fluorhaltigen Plasma, in HF-Dampf oder naß mit BHF (buffered
HF) erfolgen. Für den Fall, daß das Substrat 5 aus Poliamid
oder einem anderen organischen Material besteht, kann die
isotropische Ätzung durch ein O2-Plasma erfolgen.The channels K1, K2, K3 and K4 as well as the reservoir R (see FIG. 3) are etched by an isotropic etching, which must be sufficiently selective to the
Nachdem die gewünschte Strukturierung der Kanäle K1, K2, K3,
K4 usw. und des Reservoirs und damit auch die Unterätzung der
Schicht 6 (vgl. Fig. 2) erreicht ist, wird auf die Schicht 6
eine zweite Schicht 7 aufgebracht, z. B. wieder durch
Abscheidung. Diese Schicht 7 sollte vorzugsweise ausreichend
nichtkonform sein. Dadurch wird ein vollständiger Verschluß
der Öffnungen O erleichtert. Die Abscheidung der Schicht 7
erfolgt so lange, bis die Öffnungen O verschlossen sind (z.
B. Plasma-Si3N4-Abscheidung) oder wird vorher beendet (z. B.
CVD-Abscheidung von Bor-Phosphor-Silikat-Glas BPSG). Der
Verschluß mit BPSG wird vorzugsweise durch einen
nachfolgenden Verfließprozeß bei hohen Temperaturen
vollendet.After the desired structuring of the channels K1, K2, K3, K4 etc. and the reservoir and thus also the undercutting of the layer 6 (see FIG. 2) has been achieved, a second layer 7 is applied to the
Durch das beschriebene Verfahren können geschlossene Kanäle K und Reservoirs R unter Verwendung von nur einem einzigen Substrat erzeugt werden, wobei ein mechanischer Montageprozeß von zwei Komponenten wie im Stand der Technik nicht mehr notwendig ist.Closed channels K and reservoirs R using only one Substrate are generated using a mechanical assembly process of two components as in the prior art no longer necessary is.
Falls erforderlich, kann zur weiteren Stabilisierung bzw. als Schutz auf die Schicht 7 eine weitere Schicht bzw. weitere Schichten aufgebracht werden. Zur Massenproduktion können selbstverständlich eine Vielzahl der in Fig. 3 dargestellten Strukturen gleichzeitig auf einem gemeinsamen Substrat hergestellt und anschließend verzeinzelt werden.If necessary, for further stabilization or as Protection on layer 7 another layer or more Layers are applied. Can mass produce of course, a variety of those shown in Fig. 3 Structures simultaneously on a common substrate are produced and then separated.
Anstelle der in den Fig. 1 bis 3 beschriebenen
Ausführungsformen eines Tintenstrahldruckkopfes nach der
Erfindung, bei welchem die thermischen Elemente 2 im Bereich
des Kanalbodens der Kanäle K angeordnet sind, ist es auch
möglich, wie die Fig. 4 und 5 zeigen, das thermische Element
2 innerhalb des Kanales K anzuordnen.Instead of that described in FIGS. 1 to 3
Embodiments of an ink jet print head according to the
Invention, in which the
Hierfür wird, wie aus Fig. 4 ersichtlich, innerhalb des
Substrates 5 eine Widerstandsschicht angeordnet, die
anschließend durch Fotolithographie und Ätzung strukturiert
wird. Im Ausführungsbeispiel von Fig. 4 ist die
Widerstandsschicht des thermischen Elementes 2 auf etwa
halber Höhe des Substrates 5 angeordnet. Hierfür wird auf
eine in Fig. 4 nicht dargestellte Grundplatte zunächst das
Substrat 5 zum Erreichen seiner gewünschten halben Dicke
abgeschieden. Anschließend wird die Widerstandsschicht auf
das Substrat 5 abgeschieden und strukturiert, wie es in Fig.
5 dargestellt ist. Das thermische Element 2 wird hierbei so
gestaltet, daß innerhalb des Kanales K ein dünner Balken 2a
hängt, der randseitig über breitere Stege innerhalb des
Substrates 5 eingehängt ist. Das thermische Element 2 liegt
somit nicht am Substrat 1 an, sondern ist innerhalb des
Kanales K aufgehängt, so daß die vom thermischen Element 2
erzeugte Energie vorteilhafterweise ausschließlich an die
Tintenflüssigkeit innerhalb des Kanales K abgegeben werden
kann. Dies setzt, wie erwähnt, voraus, daß das Substrat 5 in
zwei Schritten abgeschieden wird. Beim isotropen Ätzen des
Substrates 5 wird das thermische Element 2 selbsttätig
freigelegt. Die in Fig. 5, die eine Draufsicht von oben
entlang der Schnittlinie E-F in Fig. 4 zeigt, links und
rechts des Balkens 2a befindlichen breiteren Stege dienen als
Widerstandsanschlüsse und können entweder von oben oder unten
kontaktiert werden. Da im Gegensatz zum Ausführungsbeispiel
der Fig. 1 und 2 das thermische Element 2 der
Tintenflüssigkeit ausgesetzt ist, empfiehlt es sich, das
thermische Element 2 aus erosionsfestem Material, z. B.
Tantal, herzustellen. Nach dem Abscheiden und Strukturieren
der das thermische Element 2 bildenden Widerstandsschicht,
wird der zweite Teil des Substrats 5 abgeschieden.For this purpose, as can be seen from FIG. 4, a resistance layer is arranged within the
Im Zusammenhang mit Fig. 3 wurde erläutert, daß die oberen
Enden der Kanäle K1, K2, K3 und K4 mit Austrittsöffnungen 15
versehen sind, welche auf den Stirnseiten der jeweiligen
Kanäle K1, K2, K3 und K4 angeordnet sind. Die im
Ausführungsbeispiel von Fig. 6 ausschnittsweise dargestellten
Kanäle K1, K2 eines Tintenstrahldruckkopfes weisen an ihren
Kanalenden ebenfalls Austrittsöffnungen 15 auf. Diese
Austrittsöffnungen 15 sind jedoch an der oberen Kanalwandung
durch kreisrunde Öffnungen gebildet. Die Austrittsöffnungen
15 befinden sich in der Schicht 6, die über dem Substrat 5
angeordnet wird. Damit die Austrittsöffnungen 15 bei dem
erwähnten nachfolgenden Abscheiden der Schicht 7 nicht
verschlossen werden, sind die Durchmesser der
Austrittsöffnungen 15 so groß gewählt, daß zwar die Öffnungen
O bei dem isotropen Ätzvorgang sicher verschlossen, die Austrittsöffnungen
15 selbst jedoch sicher nicht verschlossen
werden. Die Austrittsöffnungen 15 liegen im
Ausführungsbeispiel von Fig. 6 parallel zur
Substratoberfläche. Die Austrittsöffnungen 15 sind
vorzugsweise größer als 1,0 µm. Zweckmäßigerweise wird der
Durchmesser zwischen 5 und 50 µm gewählt. Der wesentliche
Vorteil dieser Austrittsöffnungen 15 ist in ihrer kreisrunden
Gestalt zu sehen, die das Heraustreten eines kreisrunden
Tröpfchens erlaubt, wodurch ein Punkt auf dem Papier mit
exakt kreisförmiger Außenkontur gebildet werden kann.
Vorteilhaft ist an diesem Ausführungsbeispiel weiter, daß die
Austrittsöffnungen 15 nicht nur in einer Reihe, sondern
flächig in einer Matrix angeordnet werden können. Des
weiteren ist kein Sägen oder Brechen wie im
Ausführungsbeispiel von Fig. 3 notwendig, wodurch eine
Verunreinigung der Austrittsöffnung 15 vermieden werden kann.In connection with Fig. 3 it was explained that the upper
Ends of the channels K1, K2, K3 and K4 with
In Fig. 7 ist ausschnittsweise der Tintenstrahldruckkopf im
Bereich eines aus Polysilizium bestehenden thermischen
Elementes 2 mit einem integrierten Transistor auf
Siliziumsubstrat dargestellt. Die bereits bekannten
Bezugszeichen stehen für die bekannten Teile. Der besseren
Übersichtlichkeit ist auf die Darstellung des Kanales K und
der Schichten 6 und 7 verzichtet worden. Das thermische
Element 2 aus niedrig dotiertem Polysilizium ist randseitig
von hochdotiertem Polysilizium kontaktiert. Die hochdotierten
Polysiliziumabschnitte sind mit dem Bezugszeichen 31
markiert. Die beiden hochdotierten Polysiliziumabschnitte 31
sind von als Zuleitungen wirkenden Metallbahnen 30
kontraktiert. Unterhalb des thermischen Elementes 2 sind zwei
wärmespeichernde Schichten 20, 21 angeordnet. Unmittelbar
unterhalb des thermischen Elementes 2 befindet sich die
Schicht 20, die beispielsweise aus TEOS-SiO2 besteht.
Unterhalb dieser Schicht 20 befindet sich eine weitere
wärmespeichernde Schicht 21, die z. B. aus FOX-SiO2 besteht.7 shows a detail of the inkjet printhead in the region of a
Die Metallbahn 30, die an den rechten hochdotierten
Polysiliziumabschnitt 31 anschließt, kontaktiert mit ihrem
anderen Ende eine n+-dotierte Schicht, die beispielsweise den
Sourceanschluß eines MOS-Transistors bildet. Die Metallbahn
30 kann aus Aluminium oder Wismut bestehen. Die aus Fig. 1
bereits bekannte Schutzschicht 3 besteht aus Plasma-SiO2 und
einer Schicht aus Plasma-Si3N4, die sich über die Metallbahn
30 in dem Bereich des MOS-Transistors erstreckt.The
Claims (24)
- Ink-jet print head having channels (K; K1; K2...), which are arranged parallel to one another within a substrate (5) and are separated by partitions (10) and are provided with a cover plate (6, 7) and in each case with an outlet opening (15) at one of their ends, and also having a thermal or piezoelectric element (2) assigned to each channel (K; K1, K2...), which element, upon excitation and with ink liquid situated within the channel (K; K1, K2...), causes an ink droplet to be ejected from the outlet opening (15),
characterized in that the cover plate (6, 7) comprises at least two layers (6, 7), in that a first layer (6) produced by deposition is arranged directly on the channel (K; K1, K2...), which first layer is provided with a multiplicity of openings (O) lying above the channel (K; K1, K2...), and in that a second layer (7) produced by deposition is arranged on the surface of the first layer (6) remote from the channel (K; K1, K2...), which second layer is made of borophosphorus silicate glass or Si3N4 and covers the openings (O). - Ink-jet print head according to Claim 1, characterized in that an electronic drive circuit (A) is integrated within the substrate (5).
- Ink-jet print head according to Claim 1 or 2, characterized in that the thermal element (2) is arranged at the bottom of the channel (K; K1, K2...) as a heating resistor formed by a polysilicon layer.
- Ink-jet print head according to Claim 3, characterized in that at least one protective layer (3, 4) is arranged between the bottom of the channel and the polysilicon layer.
- Ink-jet print head according to Claim 1 or 2, characterized in that the thermal or piezoelectric element (2) is arranged within the channel (K; K1, K2...) and is suspended from the side walls of the channel at the edges, and in that the thermal or piezoelectric element (2) is formed from erosion-resistant material.
- Ink-jet print head according to Claim 3 or 4, characterized in that a heat-storing layer (20, 21), preferably a layer made of silicon oxide (SiO2), is arranged on that surface of the chemical element (2) which is opposite to the bottom of the channel.
- Ink-jet print head according to Claim 6, characterized in that the heat-storing layer (20, 21) has a thickness > about 1.0 µm.
- Ink-jet print head according to Claim 3, 4, 6 or 7, characterized in that at least one protective layer (3, 4) is arranged between the bottom of the channel and the thermal element (2).
- Ink-jet print head according to Claim 8, characterized in that the protective layer (3) is composed of plasma oxide with a thickness of preferably 300 nm and plasma nitride with a thickness of preferably 600 nm.
- Ink-jet print head according to Claim 8, characterized in that a further protective layer (4), which is preferably composed of sputtered Ta, is arranged over the first protective layer (3).
- Ink-jet print head according to one of the preceding claims, characterized in that the channel has channel side walls with a height of about 5 µm to 50 µm.
- Ink-jet print head according to one of the preceding claims, characterized in that the channel side walls are formed from plasma oxide, polysiloxanes or polyimide.
- Ink-jet print head according to one of the preceding claims, characterized in that the first layer (6) of the cover plate, which first layer is provided with openings (O), is a patterned plasma nitride or polysilicon layer.
- Ink-jet print head according to one of the preceding claims, characterized in that the second layer (7) is composed of borophosphorus silicate glass or Si3N4.
- Method of manufacturing an ink-jet print head according to one of Claims 1 to 14, having the following method steps:provision of a substrate (5), which determines the height of the channel side walls and to which thermal or piezoelectric elements (2) are assigned in the region of the subsequent channels (K; K1, K2...);deposition of a first layer (6) on this substrate (5);patterning of this first layer (6) with a multiplicity of openings (O) above the subsequent channels (K; K1, K2...);isotropic etching of the substrate (5) through the openings (O) in the first layer (6) until the channels (K; K1, K2...) are uncovered;deposition of a second layer (7) onto the first layer (6) until the openings (O) are closed off;formation of outlet openings (15) in each case at one end of the channels (K; K1, K2...).
- Method according to Claim 15, characterized in that the substrate (5) is deposited in the form of plasma oxide, polysiloxanes or polyimide with a thickness of about 5 µm to 50 µm onto a baseplate.
- Method according to Claim 15 or 16, characterized in that the first layer (6) is patterned by photolithography with subsequent dry etching.
- Method according to one of Claims 15 to 17, characterized in that the substrate (5) is composed of plasma oxide or polysiloxanes and the first layer (6) is composed of polysilicon or silicon nitride, and the first layer (6) is patterned by photolithography with subsequent isotropic etching, dry using a fluorine-containing plasma in HF vapour or wet using BHF.
- Method according to one of Claims 15 to 17, characterized in that the substrate (5) is composed of polyimide or another organic material, and the first layer (6) is patterned by photolithography with subsequent isotropic etching by means of an O2 plasma.
- Method according to one of Claims 15 to 19, characterized in that a deposition with plasma Si3N4 or a CVD deposition of borophosphorus silicate glass is effected as the second layer.
- Method according to Claim 20, characterized in that after the second layer (7) has been deposited onto the first layer (6), a flow process at high temperatures is carried out.
- Method according to one of Claims 15 to 21, characterized in that, in a first step, the substrate (5) is deposited approximately up to half of the desired thickness of the substrate (5), in that, in a subsequent step, a resistive layer is applied and this resistive layer is patterned, and in that, in a further step, the second half of the substrate is deposited onto the resistive layer.
- Method according to Claim 22, characterized in that the resistive layer is an erosion-resistant layer.
- Method according to one of Claims 15 to 21, characterized in that an opening (A) is arranged in the first layer (6) in each case at one end of the channels, which opening is large enough that it is not closed off during the subsequent process of depositing the second layer (7), and these openings (A) serve as outlet openings (15).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19536429A DE19536429A1 (en) | 1995-09-29 | 1995-09-29 | Ink jet printhead and method of making such an ink jet printhead |
DE19536429 | 1995-09-29 | ||
PCT/DE1996/001858 WO1997011849A2 (en) | 1995-09-29 | 1996-09-27 | Ink-jet printing head and method of manufacturing it |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0852539A2 EP0852539A2 (en) | 1998-07-15 |
EP0852539B1 true EP0852539B1 (en) | 1999-07-28 |
Family
ID=7773644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96944566A Expired - Lifetime EP0852539B1 (en) | 1995-09-29 | 1996-09-27 | Ink-jet printing head and method of manufacturing it |
Country Status (6)
Country | Link |
---|---|
US (2) | US6099106A (en) |
EP (1) | EP0852539B1 (en) |
JP (1) | JP3065105B2 (en) |
KR (1) | KR19990063906A (en) |
DE (2) | DE19536429A1 (en) |
WO (1) | WO1997011849A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6322201B1 (en) * | 1997-10-22 | 2001-11-27 | Hewlett-Packard Company | Printhead with a fluid channel therethrough |
JP3327246B2 (en) * | 1999-03-25 | 2002-09-24 | 富士ゼロックス株式会社 | Ink jet recording head and method of manufacturing the same |
US6482574B1 (en) | 2000-04-20 | 2002-11-19 | Hewlett-Packard Co. | Droplet plate architecture in ink-jet printheads |
NL1016735C2 (en) * | 2000-11-29 | 2002-05-31 | Ocu Technologies B V | Method for forming a nozzle in a member for an inkjet printhead, a nozzle member, an inkjet printhead provided with this nozzle member and an inkjet printer provided with such a printhead. |
US6627467B2 (en) | 2001-10-31 | 2003-09-30 | Hewlett-Packard Development Company, Lp. | Fluid ejection device fabrication |
US7125731B2 (en) | 2001-10-31 | 2006-10-24 | Hewlett-Packard Development Company, L.P. | Drop generator for ultra-small droplets |
US6698868B2 (en) | 2001-10-31 | 2004-03-02 | Hewlett-Packard Development Company, L.P. | Thermal drop generator for ultra-small droplets |
GB2410465A (en) * | 2004-01-29 | 2005-08-03 | Hewlett Packard Development Co | Method of making an inkjet printhead |
JP4706850B2 (en) | 2006-03-23 | 2011-06-22 | 富士フイルム株式会社 | Nozzle plate manufacturing method, droplet discharge head, and image forming apparatus |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463359A (en) * | 1979-04-02 | 1984-07-31 | Canon Kabushiki Kaisha | Droplet generating method and apparatus thereof |
JPS58220754A (en) | 1982-06-18 | 1983-12-22 | Canon Inc | Ink jet recording head |
US4609427A (en) * | 1982-06-25 | 1986-09-02 | Canon Kabushiki Kaisha | Method for producing ink jet recording head |
JPH0613219B2 (en) | 1983-04-30 | 1994-02-23 | キヤノン株式会社 | Inkjet head |
US4513298A (en) | 1983-05-25 | 1985-04-23 | Hewlett-Packard Company | Thermal ink jet printhead |
US4532530A (en) | 1984-03-09 | 1985-07-30 | Xerox Corporation | Bubble jet printing device |
US4719477A (en) | 1986-01-17 | 1988-01-12 | Hewlett-Packard Company | Integrated thermal ink jet printhead and method of manufacture |
US4863560A (en) * | 1988-08-22 | 1989-09-05 | Xerox Corp | Fabrication of silicon structures by single side, multiple step etching process |
GB8910961D0 (en) * | 1989-05-12 | 1989-06-28 | Am Int | Method of forming a pattern on a surface |
DE3917434A1 (en) * | 1989-05-29 | 1989-11-09 | Siemens Ag | Multi-layer ink printhead with ink channels which are produced by selective etching |
US5010355A (en) * | 1989-12-26 | 1991-04-23 | Xerox Corporation | Ink jet printhead having ionic passivation of electrical circuitry |
EP0443722B1 (en) * | 1990-01-25 | 1996-05-22 | Canon Kabushiki Kaisha | Ink jet recording system |
JPH042790A (en) * | 1990-04-18 | 1992-01-07 | Seiko Epson Corp | Method for etching silicon substrate |
US5265315A (en) * | 1990-11-20 | 1993-11-30 | Spectra, Inc. | Method of making a thin-film transducer ink jet head |
DE69224583T2 (en) * | 1991-10-15 | 1998-07-23 | Canon Kk | Carrier for liquid recording head, manufacturing method therefor, liquid recording head and liquid recording device |
JP3402618B2 (en) * | 1991-11-12 | 2003-05-06 | キヤノン株式会社 | Method and apparatus for manufacturing ink jet recording head |
SE9304145D0 (en) * | 1993-12-10 | 1993-12-10 | Pharmacia Lkb Biotech | Ways to manufacture cavity structures |
-
1995
- 1995-09-29 DE DE19536429A patent/DE19536429A1/en not_active Ceased
-
1996
- 1996-09-27 EP EP96944566A patent/EP0852539B1/en not_active Expired - Lifetime
- 1996-09-27 KR KR1019980702379A patent/KR19990063906A/en active IP Right Grant
- 1996-09-27 JP JP9513083A patent/JP3065105B2/en not_active Expired - Lifetime
- 1996-09-27 DE DE59602566T patent/DE59602566D1/en not_active Expired - Fee Related
- 1996-09-27 WO PCT/DE1996/001858 patent/WO1997011849A2/en active IP Right Grant
-
1998
- 1998-03-30 US US09/052,346 patent/US6099106A/en not_active Expired - Lifetime
-
2000
- 2000-03-17 US US09/528,417 patent/US6397467B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0852539A2 (en) | 1998-07-15 |
JPH10512205A (en) | 1998-11-24 |
JP3065105B2 (en) | 2000-07-12 |
DE19536429A1 (en) | 1997-04-10 |
KR19990063906A (en) | 1999-07-26 |
WO1997011849A3 (en) | 1997-06-05 |
US6099106A (en) | 2000-08-08 |
WO1997011849A2 (en) | 1997-04-03 |
US6397467B1 (en) | 2002-06-04 |
DE59602566D1 (en) | 1999-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69308996T2 (en) | Ink jet recording head | |
DE60128781T2 (en) | Bubble-powered inkjet printhead and associated Hertsellverfahren | |
DE60113798T2 (en) | INTEGRATED CMOS / MEMS INK JET PRESSURE BUTTON WITH LONG SLOTTED NOZZLE HOLE AND METHOD OF MANUFACTURING THEREOF | |
DE69515708T2 (en) | Ink jet recorder | |
DE60220633T2 (en) | Piezoelectric ink jet printhead and method of making the same | |
DE3787922T2 (en) | Inkjet printer. | |
DE69019397T2 (en) | Process for the production of ink jet press buttons. | |
DE3443560C2 (en) | Liquid droplet writing head | |
DE60115592T2 (en) | Integrated CMOS / MEMS ink jet printhead with heating elements formed during CMOS processing and method of forming same | |
DE60131223T2 (en) | Bubble-powered inkjet printhead and associated Hertsellverfahren | |
DE60111716T2 (en) | INTEGRATED CMOS / MEMS INK JET PRESSURE HEAD WITH OXID BASE SIDE DRY ARCHITECTURE AND METHOD FOR THE PRODUCTION THEREOF | |
DE60028308T2 (en) | Fully integrated thermal inkjet printhead with a back etched phosphosilicate glass layer | |
DE60126869T2 (en) | Bubble-type ink-jet printhead | |
DE69515572T2 (en) | A method of manufacturing an ink jet print head substrate, an ink jet print head, and an ink jet recording apparatus | |
DE19626822B4 (en) | Ink jet head and method of manufacturing a nozzle plate | |
DE69105639T2 (en) | Inkjet thermal print head with location control for the bubble jump. | |
DE19836357A1 (en) | Unilateral manufacturing process for forming a monolithic ink jet printing element array on a substrate | |
DE69636021T2 (en) | Ink jet printhead and method of making the same | |
DE4223707A1 (en) | Ink bubble jet printer - has multiple nozzles each with associated heating electrode to generate air bubble causing rapid discharge of defined ink droplet | |
DE4214555A1 (en) | Arrangement for an electrothermal ink print head | |
DE60115714T2 (en) | Fluid jet printhead resistance element and method of making the same | |
DE69217879T2 (en) | Inkjet printhead | |
DE69733972T2 (en) | Structure for effecting adhesion between the substrate and the ink barrier in an ink jet printhead | |
DE69933168T2 (en) | INK JET PRINT HEAD AND METHOD FOR THE PRODUCTION THEREOF | |
DE4141203A1 (en) | Ink jet printer head - has ink ducts etched into plate mounted on heater actuator to generate droplet discharge bubbles |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19980320 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB IT |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
17Q | First examination report despatched |
Effective date: 19980819 |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB IT |
|
REF | Corresponds to: |
Ref document number: 59602566 Country of ref document: DE Date of ref document: 19990902 |
|
ET | Fr: translation filed | ||
ITF | It: translation for a ep patent filed | ||
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 19990929 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20010912 Year of fee payment: 6 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20010928 Year of fee payment: 6 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: IF02 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20020927 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20020927 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20030603 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20050927 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20061114 Year of fee payment: 11 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20080401 |