EP0802559B1 - Ecran plat de visualisation à source d'hydrogène - Google Patents
Ecran plat de visualisation à source d'hydrogène Download PDFInfo
- Publication number
- EP0802559B1 EP0802559B1 EP97410044A EP97410044A EP0802559B1 EP 0802559 B1 EP0802559 B1 EP 0802559B1 EP 97410044 A EP97410044 A EP 97410044A EP 97410044 A EP97410044 A EP 97410044A EP 0802559 B1 EP0802559 B1 EP 0802559B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- hydrogen
- cathode
- anode
- source
- screen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Revoked
Links
- 229910052739 hydrogen Inorganic materials 0.000 title claims description 55
- 239000001257 hydrogen Substances 0.000 title claims description 55
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000000750 progressive effect Effects 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 18
- 230000005284 excitation Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VAYOSLLFUXYJDT-RDTXWAMCSA-N Lysergic acid diethylamide Chemical compound C1=CC(C=2[C@H](N(C)C[C@@H](C=2)C(=O)N(CC)CC)C2)=C3C2=CNC3=C1 VAYOSLLFUXYJDT-RDTXWAMCSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/88—Vessels; Containers; Vacuum locks provided with coatings on the walls thereof; Selection of materials for the coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/94—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Definitions
- the present invention relates to flat screens of visualization, and more particularly of cathodoluminescence screens, with anode carrying separate luminescent elements from each other by insulating zones, and susceptible to be excited by an electronic bombardment from microtips.
- the attached figure shows an example of a flat screen microtip color of the type to which this relates invention.
- Such a microtip screen essentially consists a cathode 1 with microtips 2 and a grid 3 provided with holes 4 corresponding to the locations of the microtips 2.
- the cathode 1 is placed opposite a cathodoluminescent anode 5 including a glass substrate 6 constitutes the screen surface.
- Cathode 1 is organized in columns and is made up, on a glass substrate 10, cathode conductors organized in mesh from a conductive layer.
- the microtips 2 are made on a resistive layer 11 deposited on the cathode conductors and are arranged inside meshes defined by the cathode conductors. The figure partially represents the interior of a mesh and the conductors cathode do not appear in this figure.
- Cathode 1 is associated with grid 3 organized in lines. The intersection a row of grid 3 and a column of cathode 1 defines a pixel.
- This device uses the electric field which is created between the cathode 1 and the grid 3 so that electrons are extracted from the microtips 2. These electrons are then attracted by phosphor elements 7 from the anode 5 if these are suitably polarized.
- the anode 5 is provided with alternating bands of phosphor elements 7r, 7g, 7b each corresponding to a color (Red, Green, Blue). The strips are parallel to the columns of the cathode and are separated from each other by an insulator 8, generally silicon oxide (SiO 2 ).
- the phosphors 7 are deposited on electrodes 9, made up of corresponding strips of a transparent conductive layer such as indium tin oxide (ITO).
- ITO indium tin oxide
- the sets of red, green and blue bands are alternately polarized with respect to the cathode 1, so that electrons extracted from the microtips 2 of a pixel of the cathode / grid are alternately directed towards the phosphors 7 opposite each of the colors.
- the phosphor 7 selection command (the phosphor 7g in the figure) which must be bombarded by electrons from the microtips of cathode 1 requires ordering, selectively, the polarization of the phosphor elements 7 of anode 5, color by color.
- the rows of grid 3 are sequentially polarized at a potential of the order of 80 volts, while the strips of phosphor elements (for example 7g) to be excited are polarized under a voltage of the order 400 volts via the ITO band on which these phosphor elements are deposited.
- ITO bands, carrying the other bands of phosphor elements (for example 7r and 7b), are at low or no potential.
- the columns of cathode 1 are brought to respective potentials between a maximum emission potential and absence potential emission (for example, 0 and 30 volts respectively). We fix thus the brightness of a color component of each of the pixels of a line.
- the choice of the values of the polarization potentials is linked to the characteristics of phosphors 7 and microtips 2. Conventionally, below a potential difference of 50 volts between the cathode and the grid, there is no emission electronic, and the maximum emission used corresponds to a potential difference of 80 volts.
- a disadvantage of conventional screens is that microtips gradually lose their emissivity. We can see this phenomenon by measuring the current in the cathode conductors. This results in a gradual decrease screen brightness, which affects the lifespan of classic screens.
- a flat screen corresponding to the preamble of claim 1 is described in document WO 96/01492.
- the present invention aims to overcome this drawback by making the emissive power of the microtips substantially constant.
- the present invention also aims to provide a screen with automatic regulation of the emitting power of the microtips.
- the present invention further aims to provide a process for producing a screen whose microtips have a substantially constant emissivity without modifying or screen structure, nor the screen control means.
- the present invention provides a flat display screen comprising a cathode with electron bombardment microtips of an anode provided phosphor elements, the anode and the cathode being separated by a vacuum space, and containing a release source progressive hydrogen, characterized in that the progressive release source of hydrogen consists of a thin layer deposit of a hydrogenated material.
- the hydrogen source consists of a resistive layer of the cathode on which the microtips are arranged.
- the hydrogen source consists of isolation bands separating strips of phosphor elements from the anode.
- the hydrogen source is produced at the periphery of the area active anode carrying the phosphors, a source excitation of said hydrogen source being carried out, side cathode, facing said source of hydrogen.
- the present invention also provides a method of manufacture of a flat display screen comprising a microtip cathode of electron bombardment of an anode provided with phosphor elements, the anode and the cathode being separated by a vacuum space, characterized in that the method comprises the step consisting in hydrogenating at the time of its deposition, at least one of the constituent thin layers formed inside this screen.
- the hydrogenated layer is obtained by chemical phase deposition plasma-assisted vapor from at least one precursor enriched in hydrogen.
- the present invention originates from an interpretation phenomena that cause the above problems in classic screens.
- the inventors consider that these problems are due, in particular to an oxidation of the microtips of the cathode.
- the surface layers of the anode are, from a chemical point of view, oxides, that this either the phosphors 7 or the insulator 8.
- the microtips are generally metallic, for example in molybdenum (Mo).
- Oxide layers tend to shrink under the effect electronic bombardment, that is to say to release oxygen which oxidizes the surface of the microtips which then lose their emissive power.
- the present invention proposes to control this oxidation phenomenon of the microtips of the cathode by introducing into the inter-electrode space the screen, partial pressure of hydrogen.
- the most negative potential consists of the metallic cathode material and the H + or H 2 + ions are therefore attracted by the microtips to reduce them if they are oxidized.
- these H + or H 2 + ions are repelled by the anode and do not risk damaging the phosphor elements.
- the water vapor (H 2 O) formed by the recombination of the H + or H 2 + ions is then trapped by an element for trapping impurities, generally called a "getter", communicating with the inter-electrode space.
- a microtip screen is generally provided with an element for trapping impurities whose role is to absorb various pollutions resulting from the degassing of the layers of the screen in contact with the vacuum.
- this getter does not succeed in effectively trapping the oxygen degassed by the phosphors 7 and the insulating layers 8 insofar as these degassings are carried out essentially in a positive ionic form (O 2 + ) which then finds itself attracted to the microtips before it can be trapped by the getter.
- the water vapor obtained by the reduction oxygen through hydrogen ions is a molecule neutral which is then no longer attracted to microtips and can be trapped by the getter.
- the partial pressure of hydrogen must not, however be too high not to interfere with the operation of the screen.
- the partial pressure of hydrogen is according to the invention chosen according to the inter-electrode distance and the quality of the vacuum in the screen, in particular of the pressure partial of all oxidizing species combined.
- a partial hydrogen pressure of 5.10 -4 millibars (5 10 -2 Pa) constitutes a limit pressure for an inter-electrode distance of approximately 0.2 mm.
- a characteristic of the present invention is to provide, inside the inter-electrode space, a source of hydrogen which gradually releases H + ions as the screen operates, ie progressively degassing of oxidizing species from the anode.
- this source is placed near spikes so that the released hydrogen is not trapped by the getter before reaching the microtips.
- the source material must be able to give off hydrogen only under excitation.
- This excitation can be thermal. In that case, the temperature rise inside the screen during its operation produces hydrogen. This excitement can also result from electronic bombardment or ionic.
- the hydrogen source is integrated in the bands insulators 8 which separate the strips of phosphor elements from the anode.
- activation of the hydrogen source is essentially carried out by electronic bombardment. In Indeed, some electrons emitted by the microtips touch the edges of insulating tracks.
- the source of hydrogen is produced on the cathode side and is for example integrated to the resistive layer which supports the microtips. Activation of the source is then thermal, the cathode not being bombed.
- An advantage common to both embodiments described above is that they distribute the source of hydrogen across the entire surface of the screen and thus guarantee an effect homogeneous antioxidant in the screen.
- Another advantage is that they allow regulation automatic partial pressure of hydrogen in space inter-electrodes, therefore of the antioxidant means of the microtips of the cathode. Indeed, activation (thermal or by bombardment of the hydrogen source is located in the region microdots which emit and which are therefore susceptible to be oxidized.
- Another advantage is that they do not require any modification of the screen structure, but only deposition conditions of the insulating tracks 8 or of the layer resistive 11, as will be seen below.
- the deposition parameters are adjusted at least one layer chosen to cause incorporation of hydrogen in the material of this layer.
- Incorporation diffusion of hydrogen is adjusted according to the quantity of hydrogen that we want to see released by the material during screen operation, i.e. depending on the quality of the vacuum in the inter-electrode space, in particular the partial pressure of the oxidizing species, and of the means excitation chosen for the hydrogen source.
- the source of hydrogen is made up of dedicated zones, arranged outside the active area of the screen, for example, on the periphery of the anode. An excitation source is then produced on the cathode side opposite of these dedicated areas.
- the excitation source can be constituted of a microtip zone next to the hydrogen source outside the active area of the screen.
- the dedicated excitation source is ordered at regular intervals to cause regeneration microtips.
- this dedicated source be controlled from a current measurement flowing through the cathode conductors to cause a microtip regeneration phase according to a threshold of current from which it is considered desirable to regenerate the microtips.
- the deposition of the various layers used in manufacturing of a screen is generally carried out by a chemical deposit plasma assisted vapor phase (PECVD).
- PECVD chemical deposit plasma assisted vapor phase
- Such a deposit method uses mixtures of precursor compounds of the material to deposit. It is easy to control the content of added hydrogen to the precursors. This technique allows obtaining deposits highly hydrogenated and easily control the amount of hydrogen by varying the deposition parameters (temperature of deposition, self-bias voltage, deposition pressure, temperature annealing, etc.).
- silicon-based materials hydrogenated, hydrogenated silicon carbide, nitride hydrogenated silicon, hydrogenated silicon oxide, carbon hydrogenated, hydrogenated germanium and hydrogenated oxynitride.
- the choice of material used depends, in particular, on the source of hydrogen.
- the hydrogen source is produced on the cathode side, we will be able to hydrogenate the silicon usually constituting the resistive layer 11 which dispenses hydrogen.
- the hydrogen source consists of the bands insulators 8 between the strips of phosphor elements of the anode
- a material that is both dielectric and easily hydrogenated for example, silicon carbide or silicon oxide.
- nitride of silicon which also has the advantage of minimizing oxygen contained in the insulating strips so that the hydrogen released has the task of reducing the degassed oxidizing species essentially by the phosphor elements.
- amorphous compound insofar as it can generate a significant amount of hydrogen because its concentration is not limited by a crystal structure.
- the invention has been described above in conjunction with a microtip color screen, it applies also on a monochrome screen. If the anode of such a monochrome screen consists of two sets of alternating bands phosphor elements, all embodiments described above can be implemented. On the other hand, if the anode of the monochrome screen consists of a phosphor plan, the hydrogen source will be constituted either by a dedicated source external to the active area of the screen, either by the resistive layer cathode side.
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
Claims (6)
- Écran plat de visualisation comportant une cathode à micropointes de bombardement électronique d'une anode (5) pourvue d'éléments luminophores (7), l'anode (5) et la cathode (1) étant séparées par un espace sous vide (12), et contenant une source à libération progressive d'hydrogène, caractérisé en ce que la source à libération progressive d'hydrogène est constituée d'un dépôt en couche mince d'un matériau hydrogéné.
- Écran selon la revendication 1, caractérisé en ce que ladite source d'hydrogène est constituée par une couche résistive (11) de la cathode (1) sur laquelle sont disposées les micropointes (2).
- Écran selon la revendication 1, caractérisé en ce que ladite source d'hydrogène est constituée par des bandes d'isolement (8) séparant des bandes d'éléments luminophores (7) de l'anode (5).
- Écran selon la revendication 1, caractérisé en ce que ladite source d'hydrogène est réalisée en périphérie de la zone active de l'anode (5) portant les luminophores (7), une source d'excitation de ladite source d'hydrogène étant réalisée, côté cathode (11), en regard de ladite source d'hydrogène.
- Procédé de fabrication d'un écran plat de visualisation comportant une cathode à micropointes de bombardement électronique d'une anode (5) pourvue d'éléments luminophores (7), l'anode (5) et la cathode (1) étant séparées par un espace sous vide (12), caractérisé en ce que le procédé comprend l'étape consistant à hydrogéner lors de son dépôt, l'une au moins des couches minces constitutives formées à l'intérieur de cet écran.
- Procédé selon la revendication 5, caractérisé en ce que ladite couche est obtenue par un dépôt chimique en phase vapeur assisté par plasma à partir d'au moins un précurseur enrichi en hydrogène.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9605121A FR2747839B1 (fr) | 1996-04-18 | 1996-04-18 | Ecran plat de visualisation a source d'hydrogene |
FR9605121 | 1996-04-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0802559A1 EP0802559A1 (fr) | 1997-10-22 |
EP0802559B1 true EP0802559B1 (fr) | 2001-12-05 |
Family
ID=9491513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97410044A Revoked EP0802559B1 (fr) | 1996-04-18 | 1997-04-15 | Ecran plat de visualisation à source d'hydrogène |
Country Status (5)
Country | Link |
---|---|
US (1) | US5907215A (fr) |
EP (1) | EP0802559B1 (fr) |
JP (1) | JPH1055770A (fr) |
DE (1) | DE69708739T2 (fr) |
FR (1) | FR2747839B1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3745844B2 (ja) * | 1996-10-14 | 2006-02-15 | 浜松ホトニクス株式会社 | 電子管 |
KR100288549B1 (ko) * | 1997-08-13 | 2001-06-01 | 정선종 | 전계방출디스플레이 |
JP3481142B2 (ja) * | 1998-07-07 | 2003-12-22 | 富士通株式会社 | ガス放電表示デバイス |
TW432420B (en) * | 1998-07-21 | 2001-05-01 | Futaba Denshi Kogyo Kk | Cold cathode electronic device, and field emission luminous device and cold cathode luminous device each includes same |
US6633119B1 (en) | 2000-05-17 | 2003-10-14 | Motorola, Inc. | Field emission device having metal hydride hydrogen source |
EP3734637A4 (fr) * | 2018-01-31 | 2021-10-13 | Nano-X Imaging Ltd | Tube à rayons x à cathode froide et son procédé de commande |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR884289A (fr) * | 1941-07-22 | 1943-08-09 | Licentia Gmbh | Tube de braun |
US3552818A (en) * | 1966-11-17 | 1971-01-05 | Sylvania Electric Prod | Method for processing a cathode ray tube having improved life |
US3432712A (en) * | 1966-11-17 | 1969-03-11 | Sylvania Electric Prod | Cathode ray tube having a perforated electrode for releasing a selected gas sorbed therein |
JPS5062766A (fr) * | 1973-10-05 | 1975-05-28 | ||
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US5144191A (en) * | 1991-06-12 | 1992-09-01 | Mcnc | Horizontal microelectronic field emission devices |
JP3252545B2 (ja) * | 1993-07-21 | 2002-02-04 | ソニー株式会社 | 電界放出型カソードを用いたフラットディスプレイ |
KR950034365A (ko) * | 1994-05-24 | 1995-12-28 | 윌리엄 이. 힐러 | 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법 |
IT1269978B (it) * | 1994-07-01 | 1997-04-16 | Getters Spa | Metodo per la creazione ed il mantenimento di un'atmosfera controllata in un dispositivo ad emissione di campo tramite l'uso di un materiale getter |
US5714837A (en) * | 1994-12-09 | 1998-02-03 | Zurn; Shayne Matthew | Vertical field emission devices and methods of fabrication with applications to flat panel displays |
US5684356A (en) * | 1996-03-29 | 1997-11-04 | Texas Instruments Incorporated | Hydrogen-rich, low dielectric constant gate insulator for field emission device |
-
1996
- 1996-04-18 FR FR9605121A patent/FR2747839B1/fr not_active Expired - Fee Related
-
1997
- 1997-04-15 DE DE69708739T patent/DE69708739T2/de not_active Revoked
- 1997-04-15 EP EP97410044A patent/EP0802559B1/fr not_active Revoked
- 1997-04-17 JP JP9100127A patent/JPH1055770A/ja active Pending
- 1997-04-17 US US08/837,354 patent/US5907215A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69708739D1 (de) | 2002-01-17 |
US5907215A (en) | 1999-05-25 |
DE69708739T2 (de) | 2002-07-18 |
FR2747839A1 (fr) | 1997-10-24 |
JPH1055770A (ja) | 1998-02-24 |
EP0802559A1 (fr) | 1997-10-22 |
FR2747839B1 (fr) | 1998-07-03 |
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