EP0647027A1 - Low voltage precision current switch - Google Patents
Low voltage precision current switch Download PDFInfo
- Publication number
- EP0647027A1 EP0647027A1 EP94112575A EP94112575A EP0647027A1 EP 0647027 A1 EP0647027 A1 EP 0647027A1 EP 94112575 A EP94112575 A EP 94112575A EP 94112575 A EP94112575 A EP 94112575A EP 0647027 A1 EP0647027 A1 EP 0647027A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- transistor
- coupled
- current
- output
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
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- Electronic Switches (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
Description
- This invention relates to current switch circuits and, in particular but not limited to, current switch circuits for operating at low supply voltages while not compromising dynamic range.
- Current switch circuits may be utilized in a plurality of applications, for example, in charge pumps for use in phase locked loops and delay locked loops. Typical current switch circuits include an N-type differential transistor pair with a known current being steered out of an output wherein this output may then be coupled to drive a loop filter. In general, the dynamic range of the charge pump is limited by the current switch wherein the dynamic range is limited by the differential transistor pair non-linearity (i.e. saturation). This typically amounts to approximately a three VBE voltage limitation. Thus, the dynamic range of typical current switch circuits have limitations for low operating supply voltages.
- In order to combat this problem when operating in a phase locked loop application, the voltage controlled oscillator on the other side of the loop filter needs to have a high gain in order for the phase locked loop to cover a large frequency span. However, this increases the noise sensitivity of the system.
- Hence, there exists a need for an improved current switch circuit for operating at low supply voltages while not compromising dynamic range.
-
- FIG. 1 illustrates a detailed schematic diagram of a first embodiment of a current switch circuit in accordance with the present invention;
- FIG. 2 illustrates a detailed schematic diagram of a second embodiment of a current switch circuit in accordance with the present invention; and
- FIG. 3 illustrates a detailed schematic diagram of a charge pump circuit utilizing the current switch circuit shown in FIG. 2.
- Referring to FIG. 1,
current switch circuit 10 is shown.Current switch 10 includesdifferential transistor pair transistor 12 has a collector coupled tooutput terminal 14. The base oftransistor 12 is coupled to receive bias voltage VB wherein bias voltage VB may be either a DC or an AC volatge. The emitter oftransistor 12 is coupled through resistor 18 (RE) and returned to ground. Further, the emitter oftransistor 12 is coupled to the emitter oftransistor 20, the latter having a collector coupled to the first supply voltage terminal. - The base of
transistor 20 is coupled tovariable bias circuit 22 for alternately switching the voltage applied at the base oftransistor 20 from voltage (VB + VS) to voltage (VB - VS). -
Bias circuit 22 includesswitching circuit 23 which may take the form of a differential transistor pair includingPMOS transistors current source 28 to the first supply voltage terminal. Althoughcurrent source 28 is shown as providing a current of value IT, it is understood thatcurrent source 28 may provide a reduced current of IT/N where N is an integer greater than one. This will have no effect on the operation ofcharge pump 10 provided that theresistors charge pump 10 can be substantially reduced. - The gate electrodes of
PMOS transistors PMOS transistor 26, which represents an output ofbias circuit 22, is coupled to the base oftransistor 20, and to the collector oftransistor 30.Transistor 30 has a base coupled to the drain electrode ofPMOS transistor 24.Resistor 32 is coupled between the drain electrode oftransistor 24 and the collector oftransistor 30. The emitter oftransistor 30 is coupled throughresistor 34 and returned to ground. - In operation,
bias circuit 22 generates a precision current IT, for example, via a current mirror, and this current is then alternately switched on and off atterminal 14 depending upon the voltage applied at the base of transistor 20 (which is set by the logic states of voltages Vin and Vinb). That is, when the voltage at base oftransistor 20 is pulled above bias voltage VB by the amount VS (VB + VS) wherein voltage VS is a voltage sufficiently large enough to causetransistor pair transistor 20 is rendered operative whiletransistor 12 is rendered non-operative.Transistor 20 then functions to steal current away fromtransistor 12 thereby providing substantially zero current atoutput terminal 14. - However, if a voltage of (VB - VS) is applied to the base of
transistor 20,transistor 20 is rendered non-operative whiletransistor 12 is rendered operative. Then,transistor 20 does not steal current away fromtransistor 12. Thus,transistor 12 is on since voltage VB is such that current IT flows throughtransistor 12 andtransistor 12 functions to sink a net current substantially equal to IT fromterminal 14. In the above described manner, current IT is alternately switched on and off atterminal 14. -
Bias circuit 22 alternately supplies either voltage (VB + VS) or voltage (VB - VS) to the base oftransistor 20. If voltage Vin is greater than voltage Vinb, thenbias circuit 22 provides voltage (VB + VS) to the base oftransistor 20. Alternately, if voltage Vin is less than voltage Vinb, thenbias circuit 22 supplies voltage (VB -VS) to the base oftransistor 20. - In more detail, if voltage Vin is greater than voltage Vinb, all of current IT flows through
transistor 26 and then throughtransistor 30 andresistor 34. By choosing the value ofresistor 34 to be substantially equal to (RE + VS/IT), then the voltage appearing at the base oftransistor 20 is substantially equal to the expression shown inequation 1.
where RE is the value ofresistor 18;
VBE30 is the base-emitter voltage oftransistor 30; and
VS is a predetermined voltage. - It should be recognized that the first two terms on the right side of EQN. 1 are substantially equal to bias voltage VB assuming that the base-emitter voltages of
transistors transistor 20, for Vin > Vinb, is greater than bias voltage VB by the term VS. Therefore,transistor 20 is rendered operative and steals all current away fromtransistor 12 and substantially zero current flows atoutput terminal 14. - However, when voltage Vin is less than voltage Vinb and when
resistor 32 is substantially equal to the value of 2VS/IT, switchingcircuit 23 now routes the current viacurrent source 28 throughtransistor 24 and the voltage appearing at the base oftransistor 20 can be expressed as shown in equation 2.
From equation 2, it should be apparent that the voltage appearing at the base oftransistor 20, for voltage Vin less than voltage Vinb, is substantially equal to voltage (VB - VS). As a result,transistor 20 is rendered non-operative and does not steal current away fromtransistor 12. Thus,transistor 12 is on and functions to sink current IT fromoutput terminal 14. The current flowing atoutput terminal 14 ofcurrent switch 10 with respect to input signals Vin and Vinb can be expressed in truth table form as shown in Table 1 wherein it is understood that if Vin > Vinb, then Vin = 1 and Vinb = 0 and wherein if Vin < Vinb, then Vin =0 and Vinb =1. -
Current switch 10 is advantageous over other current switches because current is switched throughtransistor 12 by controlling the voltage at the base oftransistor 20 and there is no need for an additional transistor coupled between the common emitters oftransistors resistor 18. As a result, the present invention eliminates one VBE voltage and increases the dynamic range ofcurrent switch 10 and further allowscurrent switch 10 to operate efficiently at lower voltages. - Referring to FIG. 2, a detailed schematic of
current switch 40 is shown. It is understood that the components shown in FIG. 2 which are identical to components shown in FIG. 1 are identified by the same reference numbers. The circuit shown in FIG. 2 further includesresistor 42 coupled between the base and collector oftransistor 30. In addition, althoughvariable bias circuit 22 of FIG 2 performs the same function as does its FIG. 1 counterpart (which is to provide either voltage VB + VS or voltage VB - VS at the base of transistor 20),variable bias circuit 22 of FIG. 2 differs slightly fromvariable bias circuit 22 of FIG. 1. First, the base oftransistor 20 is coupled to the drain electrode oftransistor 24. Second, the drain electrode oftransistor 26 is coupled to the base oftransistor 30. Third, the values forresistors resistor 42 is VS/IT. By choosing these values, if Vin > Vinb, thenbias circuit 22 provides voltage (VB - VS) at the base oftransistor 20. However, if Vin < Vinb, thenbias circuit 22 provides voltage (VB + VS) at the base oftransistor 20. -
- Referring to FIG. 3, a detailed schematic diagram of
charge pump circuit 50 is shown.Charge pump circuit 50 includes twocurrent switches current switch 40 of FIG. 2 wherein it is understood that the components shown in FIG. 3 which are identical to components shown in FIG. 2 are identified by the same reference numbers. Further, it is understood thatcharge pump circuit 50 could have been formed by utilizing two current switch circuits as shown in FIG. 1.Charge pump circuit 50 also includescurrent source 55 coupled between the first supply voltage terminal andoutput terminal 14 for providing current IT. - In particular,
charge pump circuit 50 includescurrent switch 52 which is responsive to input signals Vup and Vupb for alternately sinking current IT or zero current fromterminal 14. That is, if voltage Vup < Vupb, thencurrent switch 52 sinks current IT from terminal 14. Alternately, if voltage Vup > Vupb, thencurrent switch 52 sinks substantially zero current fromterminal 14. - Similarly,
charge pump circuit 50 includescurrent switch 53 which is responsive to input signals Vdn and Vdnb for alternately sinking current IT or zero current fromterminal 14. That is, if voltage Vdn > Vdnb, thencurrent switch 53 sinks current IT from terminal 14. Alternately, if voltage Vdn < Vdnb, thencurrent switch 53 sinks substantially zero current fromterminal 14. - Moreover, with the addition of
current source 55 along withcurrent switch circuits charge pump circuit 50 is capable of either (i) sourcing current IT to terminal 14, (ii) sinking current IT from terminal 14, or (iii) or providing a net current substantially equal to zero flowing atterminal 14. -
- By now it should be apparent from the foregoing discussion that a novel current switch circuit for operating with low supply voltage while not compromising the dynamic range has been provided. The current switch circuit includes a differential pair of transistors having first and second transistors. The base of the first transistor is coupled to a bias voltage while its collector is coupled to an output of the current switch circuit. The collector of the second transistor is coupled to a first supply voltage terminal while the base of the second transistor is coupled to a variable bias circuit for alternately swinging the voltage applied to the base of the second transistor above or below the bias voltage applied to the base of the first transistor. When the voltage applied to the base of the second transistor is less than the bias voltage applied to the base of the first transistor, a predetermined current is sunk from the output of the current switch. Otherwise, substantially zero current flows at the output of the current switch.
- While the invention has been described in specific embodiments thereof, it is evident that many alterations, modifications and variations will be apparent to those skilled in the art. Further, it is intended to embrace all such alterations, modifications and variations in the appended claims.
Claims (5)
- A current switch circuit having an output, comprising:
a differential pair of transistors having first (12) and second (14) transistors each having a collector, a base and an emitter, said emitter of said first transistor coupled to said emitter of said second transistor, said base of said first transistor coupled to receive a bias voltage, said collector of said first transistor coupled to the output of the current switch circuit, said collector of said second transistor coupled to a first supply voltage terminal;
a first resistor (18) coupled between said emitter of said first transistor and a second supply voltage terminal; and
a bias circuit (22) for alternately providing first and second voltages at said base of said second transistor, said bias circuit having an output coupled to said base of said second transistor, said first voltage being greater than said bias voltage thereby rendering said second transistor operative and said first transistor non-operative, said second voltage being less than said bias voltage thereby rendering said first transistor operative and said second transistor non-operative. - The current switch circuit according to claim 1 wherein said bias circuit includes:
a current source (28);
a first switch (23) having first and second inputs responsive to a complementary pair of input signals for steering a current provided by said current source to either a first output or a second output of said first switch;
a third transistor (30) having a collector, a base and an emitter, said base of said third transistor coupled to said first output of said first switch, said collector of said third transistor coupled to said second output of said first switch and to said output of said bias circuit;
a second resistor (32) coupled between said first output of said first switch and said collector of said third transistor; and
a third resistor (34) coupled between said emitter of said third transistor and said second supply voltage terminal. - The current switch circuit according to claim 2 wherein said first switch includes:
a fourth transistor (24) having first and second current carrying electrodes and a control electrode, said first current carrying electrode of said fourth transistor coupled to said first output of said first switch, said second current carrying electrode of said fourth transistor coupled to said current source, said control electrode of said fourth transistor coupled to receive a first one of said complementary input signals; and
a fifth transistor (26) having first and second current carrying electrodes and a control electrode, said first current carrying electrode of said fifth transistor coupled to said second output of said first switch, said second current carrying electrode of said fifth transistor coupled to said current source, said control electrode of said fifth transistor coupled to receive a second one of said complementary input signals. - The current switch circuit according to claim 1 wherein said bias circuit includes:
a current source (28);
a first switch (23) having first and second inputs responsive to said first complementary pair of input signals for steering a current provided by said current source to either a first output or a second output of said first switch, said first output of said first switch coupled to said output of said bias circuit;
a third transistor (30) having a collector, a base and an emitter, said base of said third transistor coupled to said second output of said first switch;
a second resistor (32) coupled between said first output of said first switch and said collector of said third transistor;
a third resistor (34) coupled between said emitter of said third transistor and said second supply voltage terminal; and
a fourth resistor (42) coupled between said base and collector of said third transistor. - A method for switching current at an output terminal, the method comprising the steps of:
providing a bias voltage at a base of a first transistor, said first transistor having a collector coupled to the output terminal;
providing a variable voltage at a base of a second transistor, said second transistor having a collector coupled to a first supply voltage terminal wherein current is sunk from the output terminal when said variable voltage is less than said bias voltage and wherein substantially zero current flows at the output terminal when said variable voltage is greater than said bias voltage.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/114,279 US5467051A (en) | 1993-09-01 | 1993-09-01 | Low voltage precision switch |
US114279 | 2002-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0647027A1 true EP0647027A1 (en) | 1995-04-05 |
EP0647027B1 EP0647027B1 (en) | 1999-11-03 |
Family
ID=22354311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP94112575A Expired - Lifetime EP0647027B1 (en) | 1993-09-01 | 1994-08-11 | Low voltage precision current switch |
Country Status (5)
Country | Link |
---|---|
US (1) | US5467051A (en) |
EP (1) | EP0647027B1 (en) |
JP (1) | JPH07106935A (en) |
DE (1) | DE69421493T2 (en) |
SG (1) | SG46254A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11337594A (en) * | 1998-05-22 | 1999-12-10 | Oki Electric Ind Co Ltd | Peak detecting circuit |
JP3621588B2 (en) * | 1998-09-28 | 2005-02-16 | 東芝情報システム株式会社 | Charge pump circuit |
US6414521B1 (en) * | 2001-02-01 | 2002-07-02 | Lattice Semiconductor Corp. | Sense amplifier systems and methods |
US20070220171A1 (en) * | 2006-03-17 | 2007-09-20 | Sony Corporation | Systems and methods for synchronization of asynchronous networks |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4280069A (en) * | 1979-07-02 | 1981-07-21 | Honeywell Inc. | Field effect transistor device means control system |
US4284911A (en) * | 1979-07-16 | 1981-08-18 | Rca Corporation | Switching network |
EP0330823A2 (en) * | 1988-02-29 | 1989-09-06 | STMicroelectronics S.r.l. | A low-absorption circuit device for controlling a power transistor into the on state |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126315A (en) * | 1980-03-11 | 1981-10-03 | Sony Corp | Oscillator |
DE3217512A1 (en) * | 1982-05-10 | 1983-11-10 | Siemens AG, 1000 Berlin und 8000 München | CIRCUIT ARRANGEMENT FOR LEVEL CONVERSION |
US5144164A (en) * | 1988-03-18 | 1992-09-01 | Kabushiki Kaisha Toshiba | BiCMOS current switching circuit having a plurality of resistors of a specified value |
JPH03162130A (en) * | 1989-11-21 | 1991-07-12 | Fujitsu Ltd | Semiconductor integrated circuit |
JP2990775B2 (en) * | 1990-09-25 | 1999-12-13 | 日本電気株式会社 | ECL output circuit |
FR2688905A1 (en) * | 1992-03-18 | 1993-09-24 | Philips Composants | CURRENT MIRROR CIRCUIT WITH ACCELERATED SWITCHING. |
US5321320A (en) * | 1992-08-03 | 1994-06-14 | Unisys Corporation | ECL driver with adjustable rise and fall times, and method therefor |
-
1993
- 1993-09-01 US US08/114,279 patent/US5467051A/en not_active Expired - Fee Related
-
1994
- 1994-08-11 DE DE69421493T patent/DE69421493T2/en not_active Expired - Fee Related
- 1994-08-11 EP EP94112575A patent/EP0647027B1/en not_active Expired - Lifetime
- 1994-08-11 SG SG1996001638A patent/SG46254A1/en unknown
- 1994-08-17 JP JP6214306A patent/JPH07106935A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4280069A (en) * | 1979-07-02 | 1981-07-21 | Honeywell Inc. | Field effect transistor device means control system |
US4284911A (en) * | 1979-07-16 | 1981-08-18 | Rca Corporation | Switching network |
EP0330823A2 (en) * | 1988-02-29 | 1989-09-06 | STMicroelectronics S.r.l. | A low-absorption circuit device for controlling a power transistor into the on state |
Also Published As
Publication number | Publication date |
---|---|
US5467051A (en) | 1995-11-14 |
JPH07106935A (en) | 1995-04-21 |
EP0647027B1 (en) | 1999-11-03 |
DE69421493D1 (en) | 1999-12-09 |
DE69421493T2 (en) | 2000-06-15 |
SG46254A1 (en) | 1998-02-20 |
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