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EA201290380A1 - Тонкопленочный фотогальванический элемент, способ его изготовления и его использование - Google Patents

Тонкопленочный фотогальванический элемент, способ его изготовления и его использование

Info

Publication number
EA201290380A1
EA201290380A1 EA201290380A EA201290380A EA201290380A1 EA 201290380 A1 EA201290380 A1 EA 201290380A1 EA 201290380 A EA201290380 A EA 201290380A EA 201290380 A EA201290380 A EA 201290380A EA 201290380 A1 EA201290380 A1 EA 201290380A1
Authority
EA
Eurasian Patent Office
Prior art keywords
thin
type semiconductor
film
photogalvanic
manufacture
Prior art date
Application number
EA201290380A
Other languages
English (en)
Inventor
Ярмо Скарп
Original Assignee
Бенек Ой
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Бенек Ой filed Critical Бенек Ой
Publication of EA201290380A1 publication Critical patent/EA201290380A1/ru

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

Тонкопленочный фотогальванический элемент (10), включающий оконный слой (40) из полупроводника n-типа, поглощающий слой (5) из полупроводника p-типа и р-n-переход (6) на поверхности раздела между этими двумя слоями, в котором поглощающий слой из полупроводника р-типа сформирован из теллурида кадмия CdTe. Согласно настоящему изобретению оконный слой (40) из полупроводника n-типа включает оксид/сульфид цинка Zn(O,S).
EA201290380A 2009-12-22 2010-12-22 Тонкопленочный фотогальванический элемент, способ его изготовления и его использование EA201290380A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20096380A FI20096380A0 (fi) 2009-12-22 2009-12-22 Ohutkalvoaurinkokenno, valmistusmenetelmä ja käyttö
PCT/FI2010/051072 WO2011077008A2 (en) 2009-12-22 2010-12-22 A thin film photovoltaic cell, a method for manufacturing, and use

Publications (1)

Publication Number Publication Date
EA201290380A1 true EA201290380A1 (ru) 2013-01-30

Family

ID=41462838

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201290380A EA201290380A1 (ru) 2009-12-22 2010-12-22 Тонкопленочный фотогальванический элемент, способ его изготовления и его использование

Country Status (7)

Country Link
US (1) US20130000726A1 (ru)
EP (1) EP2517269B1 (ru)
CN (1) CN102742033B (ru)
EA (1) EA201290380A1 (ru)
FI (1) FI20096380A0 (ru)
TW (1) TW201123491A (ru)
WO (1) WO2011077008A2 (ru)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014121187A2 (en) 2013-02-01 2014-08-07 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
CN105229801B (zh) 2013-02-07 2017-03-15 第一太阳能有限公司 窗口层上具有保护层的光伏器件及其制造方法
US20140261686A1 (en) * 2013-03-15 2014-09-18 First Solar, Inc Photovoltaic device with a zinc oxide layer and method of formation
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
CN104022189B (zh) * 2014-06-23 2016-07-06 山东建筑大学 一种制备ZnO/ZnS复合光电薄膜的方法
WO2016068873A1 (en) * 2014-10-28 2016-05-06 Hewlett Packard Enterprise Development Lp Media content download time
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
CN109030578A (zh) * 2018-07-30 2018-12-18 清华大学 一种基于CdTe/ZnO纳米异质结结构的NO2气敏传感器的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
SE0301350D0 (sv) * 2003-05-08 2003-05-08 Forskarpatent I Uppsala Ab A thin-film solar cell
CN100590893C (zh) * 2005-12-28 2010-02-17 中国科学院大连化学物理研究所 一种用于光伏电池的ⅱ-ⅵ族半导体薄膜的制备方法
JP2010087105A (ja) * 2008-09-30 2010-04-15 Fujifilm Corp 太陽電池

Also Published As

Publication number Publication date
WO2011077008A2 (en) 2011-06-30
TW201123491A (en) 2011-07-01
FI20096380A0 (fi) 2009-12-22
CN102742033A (zh) 2012-10-17
EP2517269A2 (en) 2012-10-31
US20130000726A1 (en) 2013-01-03
EP2517269B1 (en) 2016-03-09
CN102742033B (zh) 2015-02-25
WO2011077008A3 (en) 2011-11-17

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