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DK141784C - Fremgangsmaade og apparat til digelfri zonesmeltning af en halvlederstav - Google Patents

Fremgangsmaade og apparat til digelfri zonesmeltning af en halvlederstav

Info

Publication number
DK141784C
DK141784C DK528873A DK528873A DK141784C DK 141784 C DK141784 C DK 141784C DK 528873 A DK528873 A DK 528873A DK 528873 A DK528873 A DK 528873A DK 141784 C DK141784 C DK 141784C
Authority
DK
Denmark
Prior art keywords
digel
semiconductor
free zone
zone melting
melting
Prior art date
Application number
DK528873A
Other languages
English (en)
Other versions
DK141784B (da
Inventor
H Stut
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247651 external-priority patent/DE2247651C3/de
Priority claimed from DE19732332968 external-priority patent/DE2332968C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK141784B publication Critical patent/DK141784B/da
Application granted granted Critical
Publication of DK141784C publication Critical patent/DK141784C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK528873A 1972-09-28 1973-09-27 Fremgangsmaade og apparat til digelfri zonesmeltning af en halvlederstav DK141784C (da)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19722247651 DE2247651C3 (de) 1972-09-28 1972-09-28 Vorrichtung zur Steuerung des Durchmessers eines Halbleiterstabes
DE2247651 1972-09-28
DE19732332968 DE2332968C3 (de) 1973-06-28 1973-06-28 Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes
DE2332968 1973-06-28

Publications (2)

Publication Number Publication Date
DK141784B DK141784B (da) 1980-06-16
DK141784C true DK141784C (da) 1980-11-03

Family

ID=25763898

Family Applications (1)

Application Number Title Priority Date Filing Date
DK528873A DK141784C (da) 1972-09-28 1973-09-27 Fremgangsmaade og apparat til digelfri zonesmeltning af en halvlederstav

Country Status (7)

Country Link
US (1) US3814827A (da)
DD (1) DD110182A5 (da)
DK (1) DK141784C (da)
FR (1) FR2201132B1 (da)
GB (1) GB1451622A (da)
HK (1) HK26477A (da)
IT (1) IT993934B (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2731250C2 (de) * 1977-07-11 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Regelung des Stabquerschnittes beim tiegellosen Zonenschmelzen eines Halbleiterstabes
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
US4845332A (en) * 1987-09-16 1989-07-04 National Steel Corp. Galvanneal induction furnace temperature control system
JPH0651599B2 (ja) * 1987-12-05 1994-07-06 信越半導体株式会社 浮遊帯域制御方法
SE523237C2 (sv) * 1998-12-04 2004-04-06 Inline Hardening Sweden Ab Anordning för uppvärmning med hjälp av induktion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE631568A (da) * 1962-04-27

Also Published As

Publication number Publication date
FR2201132A1 (da) 1974-04-26
DK141784B (da) 1980-06-16
IT993934B (it) 1975-09-30
FR2201132B1 (da) 1980-04-30
DD110182A5 (da) 1974-12-12
US3814827A (en) 1974-06-04
HK26477A (en) 1977-06-10
GB1451622A (en) 1976-10-06

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