[go: up one dir, main page]

DK118782B - Elektrisk kontakt bestående af et faststoflegeme med mindst to elektroder. - Google Patents

Elektrisk kontakt bestående af et faststoflegeme med mindst to elektroder.

Info

Publication number
DK118782B
DK118782B DK456663AA DK456663A DK118782B DK 118782 B DK118782 B DK 118782B DK 456663A A DK456663A A DK 456663AA DK 456663 A DK456663 A DK 456663A DK 118782 B DK118782 B DK 118782B
Authority
DK
Denmark
Prior art keywords
electrodes
electrical contact
solid body
contact consisting
solid
Prior art date
Application number
DK456663AA
Other languages
English (en)
Inventor
S Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Priority claimed from US358841A external-priority patent/US3336484A/en
Publication of DK118782B publication Critical patent/DK118782B/da

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Control Of Resistance Heating (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thermistors And Varistors (AREA)
  • Semiconductor Memories (AREA)
  • Contacts (AREA)
  • Control Of Electrical Variables (AREA)
  • Non-Volatile Memory (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
DK456663AA 1962-09-28 1963-09-28 Elektrisk kontakt bestående af et faststoflegeme med mindst to elektroder. DK118782B (da)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22684362A 1962-09-28 1962-09-28
US25246763A 1963-01-18 1963-01-18
US25251063A 1963-01-18 1963-01-18
US25251163A 1963-01-18 1963-01-18
US28824163A 1963-06-17 1963-06-17
US358841A US3336484A (en) 1964-04-10 1964-04-10 Power switching circuit

Publications (1)

Publication Number Publication Date
DK118782B true DK118782B (da) 1970-10-05

Family

ID=27559185

Family Applications (1)

Application Number Title Priority Date Filing Date
DK456663AA DK118782B (da) 1962-09-28 1963-09-28 Elektrisk kontakt bestående af et faststoflegeme med mindst to elektroder.

Country Status (11)

Country Link
JP (2) JPS509475B1 (da)
AT (1) AT280428B (da)
CH (1) CH471441A (da)
DE (3) DE1465470A1 (da)
DK (1) DK118782B (da)
FI (1) FI45710C (da)
FR (2) FR1396321A (da)
GB (3) GB1070411A (da)
NL (2) NL158968B (da)
NO (1) NO127780B (da)
SE (3) SE355265B (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
GB2118790A (en) * 1982-02-16 1983-11-02 Bonar Instr Limited Universal motor control

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751477A (en) * 1952-07-15 1956-06-19 Pittsburgh Plate Glass Co Electrical resistive device
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Also Published As

Publication number Publication date
CH471441A (de) 1969-04-15
SE326499B (da) 1970-07-27
DE1488833C3 (de) 1975-07-24
SE332024B (da) 1971-01-25
GB1070411A (en) 1967-06-01
FR1436202A (fr) 1966-04-22
DE1488833B2 (de) 1972-04-13
AT280428B (de) 1970-04-10
JPS503916B1 (da) 1975-02-12
GB1108945A (en) 1968-04-10
NL298324A (da) 1900-01-01
NL158968B (nl) 1978-12-15
FI45710C (fi) 1972-08-10
DE1464574B1 (de) 1971-03-25
GB1070412A (en) 1967-06-01
JPS509475B1 (da) 1975-04-12
DE1465470A1 (de) 1969-08-07
SE355265B (da) 1973-04-09
DE1488833A1 (de) 1969-02-20
FI45710B (da) 1972-05-02
NO127780B (da) 1973-08-13
FR1396321A (fr) 1965-04-23

Similar Documents

Publication Publication Date Title
FR1289369A (fr) électrode
DK114988B (da) Kontakt til tilvejebringelse af elektrisk forbindelse med et ydre kredsløb.
CH437448A (de) Brennstoffzellen-Elektrode
DK118782B (da) Elektrisk kontakt bestående af et faststoflegeme med mindst to elektroder.
DK104108C (da) Batteri bestående af mindst to cylindriske tørelementer.
FR1314448A (fr) Contacts électriques sub-subminiatures
FR1187074A (fr) Perfectionnements apportés aux éléments électriques de contact
CH391914A (de) Schraubverbindung zwischen Graphitelektroden
BE612695A (fr) Electrode de soudage
CH420667A (de) Glaselektrode
CH396586A (de) Schweisselektrode
FR1250743A (fr) éléments de contact électrique
IT1036433B (it) Batteria elettrica..particolarmente del tipo piatto
FR1326481A (fr) électrode améliorée à base de carbone
CH416796A (de) Strombegrenzungsschalter
FR1314201A (fr) électrode médicale
AT239813B (de) Elektrode
CH378388A (de) Elektrische Kontaktanordnung
FR1367183A (fr) Connexions électriques concentrées
CH396155A (de) Magnetisch steuerbarer Kontakt
FR1304411A (fr) Limiteur de courant de court-circuit
DK118146B (da) Elektrisk strømkredskomponent med kvantemekanisk tunneleffekt.
FR1374320A (fr) électrodes en carbone
FR1303663A (fr) Perfectionnements aux contacts électriques
FR1338779A (fr) Perfectionnements aux contacts électriques