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DK116803B - Felteffekttransistor med isoleret styreelektrode. - Google Patents

Felteffekttransistor med isoleret styreelektrode.

Info

Publication number
DK116803B
DK116803B DK616867AA DK616867A DK116803B DK 116803 B DK116803 B DK 116803B DK 616867A A DK616867A A DK 616867AA DK 616867 A DK616867 A DK 616867A DK 116803 B DK116803 B DK 116803B
Authority
DK
Denmark
Prior art keywords
field effect
effect transistor
insulated gate
insulated
gate
Prior art date
Application number
DK616867AA
Other languages
English (en)
Inventor
M Das
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of DK116803B publication Critical patent/DK116803B/da

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/221Channel regions of field-effect devices of FETs
    • H10D62/235Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DK616867AA 1966-12-13 1967-12-08 Felteffekttransistor med isoleret styreelektrode. DK116803B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB55813/66A GB1173150A (en) 1966-12-13 1966-12-13 Improvements in Insulated Gate Field Effect Transistors

Publications (1)

Publication Number Publication Date
DK116803B true DK116803B (da) 1970-02-16

Family

ID=10474958

Family Applications (1)

Application Number Title Priority Date Filing Date
DK616867AA DK116803B (da) 1966-12-13 1967-12-08 Felteffekttransistor med isoleret styreelektrode.

Country Status (9)

Country Link
US (1) US3631310A (da)
BE (1) BE707821A (da)
CH (1) CH466872A (da)
DE (1) DE1614300C3 (da)
DK (1) DK116803B (da)
ES (1) ES348128A1 (da)
GB (1) GB1173150A (da)
NL (1) NL158657B (da)
SE (1) SE340131B (da)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1316555A (da) * 1969-08-12 1973-05-09
US3766446A (en) * 1969-11-20 1973-10-16 Kogyo Gijutsuin Integrated circuits comprising lateral transistors and process for fabrication thereof
DE2000093C2 (de) * 1970-01-02 1982-04-01 6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh Feldeffekttransistor
US3988761A (en) * 1970-02-06 1976-10-26 Sony Corporation Field-effect transistor and method of making the same
JPS4936515B1 (da) * 1970-06-10 1974-10-01
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (da) * 1971-08-26 1976-07-16
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
DE2729657A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
JPS54125986A (en) * 1978-03-23 1979-09-29 Handotai Kenkyu Shinkokai Semiconductor including insulated gate type transistor
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
GB2150348A (en) * 1983-11-29 1985-06-26 Philips Electronic Associated Insulated-gate field-effect transistors and their manufacture
US6312997B1 (en) * 1998-08-12 2001-11-06 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
US6777746B2 (en) * 2002-03-27 2004-08-17 Kabushiki Kaisha Toshiba Field effect transistor and application device thereof
JP3944461B2 (ja) * 2002-03-27 2007-07-11 株式会社東芝 電界効果型トランジスタおよびその応用装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
NL265382A (da) * 1960-03-08
NL267831A (da) * 1960-08-17
NL6407158A (da) * 1963-06-24 1964-12-28
FR1399362A (fr) * 1963-06-24 1965-05-14 Hitachi Ltd Elément semi-conducteur à effet de champ
FR1435488A (fr) * 1964-06-01 1966-04-15 Rca Corp Transistors à effets de champ et à porte isolée
FR1443781A (fr) * 1964-08-17 1966-06-24 Motorola Inc Procédé pour la fabrication de semi-conducteurs et cache photographique pour cette fabrication
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3456168A (en) * 1965-02-19 1969-07-15 United Aircraft Corp Structure and method for production of narrow doped region semiconductor devices
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device

Also Published As

Publication number Publication date
US3631310A (en) 1971-12-28
CH466872A (de) 1968-12-31
NL6716683A (da) 1968-06-14
DE1614300C3 (de) 1982-02-11
ES348128A1 (es) 1969-03-16
GB1173150A (en) 1969-12-03
DE1614300B2 (de) 1974-10-10
BE707821A (da) 1968-06-11
DE1614300A1 (de) 1970-07-09
SE340131B (da) 1971-11-08
NL158657B (nl) 1978-11-15

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