DK111529B - Semiconductor element. - Google Patents
Semiconductor element.Info
- Publication number
- DK111529B DK111529B DK632865AA DK632865A DK111529B DK 111529 B DK111529 B DK 111529B DK 632865A A DK632865A A DK 632865AA DK 632865 A DK632865 A DK 632865A DK 111529 B DK111529 B DK 111529B
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor element
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DED0046118 | 1964-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK111529B true DK111529B (en) | 1968-09-09 |
Family
ID=7049503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK632865AA DK111529B (en) | 1964-12-22 | 1965-12-09 | Semiconductor element. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3401318A (en) |
BE (1) | BE674037A (en) |
DE (1) | DE1465450B1 (en) |
DK (1) | DK111529B (en) |
FR (1) | FR1460438A (en) |
GB (1) | GB1065930A (en) |
NL (1) | NL6516741A (en) |
SE (1) | SE305024B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3831030A (en) * | 1971-07-19 | 1974-08-20 | Texas Instruments Inc | Laser-operated system for spectroscopic analysis |
US3906537A (en) * | 1973-11-02 | 1975-09-16 | Xerox Corp | Solid state element comprising semi-conductive glass composition exhibiting negative incremental resistance and threshold switching |
US4364021A (en) * | 1977-10-07 | 1982-12-14 | General Electric Company | Low voltage varistor configuration |
US4445026A (en) * | 1979-05-21 | 1984-04-24 | Raychem Corporation | Electrical devices comprising PTC conductive polymer elements |
DE2939470C2 (en) * | 1979-09-28 | 1982-04-08 | Siemens AG, 1000 Berlin und 8000 München | PTC thermistor heating device |
WO1994027302A1 (en) * | 1993-05-14 | 1994-11-24 | Kiyokawa Mekki Kougyo Co., Ltd | Metallic film resistor having fusing function and method for its manufacture |
US6670628B2 (en) * | 2002-04-04 | 2003-12-30 | Hewlett-Packard Company, L.P. | Low heat loss and small contact area composite electrode for a phase change media memory device |
TWI233204B (en) * | 2002-07-26 | 2005-05-21 | Infineon Technologies Ag | Nonvolatile memory element and associated production methods and memory element arrangements |
KR100481865B1 (en) * | 2002-11-01 | 2005-04-11 | 삼성전자주식회사 | Phase changeable memory device and method of fabricating the same |
DE10356285A1 (en) * | 2003-11-28 | 2005-06-30 | Infineon Technologies Ag | Integrated semiconductor memory and method for manufacturing an integrated semiconductor memory |
US20100034010A1 (en) * | 2008-08-06 | 2010-02-11 | Seagate Technology Llc | Memory devices with concentrated electrical fields |
CN114967234B (en) * | 2022-05-26 | 2023-11-03 | 京东方科技集团股份有限公司 | Display backplane, adjustment method and display device thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB107795A (en) * | 1916-07-08 | 1917-07-09 | Toyojiro Terashima | Improvements in Stereoscopes. |
DE973206C (en) * | 1949-05-31 | 1959-12-24 | Siemens Ag | Adjustable resistance |
NL251789A (en) * | 1959-05-26 | 1900-01-01 | ||
US3056100A (en) * | 1959-12-04 | 1962-09-25 | Bell Telephone Labor Inc | Temperature compensated field effect resistor |
US3017520A (en) * | 1960-07-01 | 1962-01-16 | Honeywell Regulator Co | Integral transistor-thermistor and circuit using same for compensating for changing transistor temperature |
BE624465A (en) * | 1961-11-06 | |||
US3309585A (en) * | 1963-11-29 | 1967-03-14 | Westinghouse Electric Corp | Junction transistor structure with interdigitated configuration having features to minimize localized heating |
US3331432A (en) * | 1964-10-06 | 1967-07-18 | Eugene S Cotton | Asymmetrical heat conductor |
-
1964
- 1964-12-22 DE DE19641465450 patent/DE1465450B1/en active Pending
-
1965
- 1965-12-09 DK DK632865AA patent/DK111529B/en unknown
- 1965-12-16 GB GB53473/65A patent/GB1065930A/en not_active Expired
- 1965-12-17 SE SE16406/65A patent/SE305024B/xx unknown
- 1965-12-20 BE BE674037D patent/BE674037A/xx unknown
- 1965-12-20 FR FR42992A patent/FR1460438A/en not_active Expired
- 1965-12-20 US US514956A patent/US3401318A/en not_active Expired - Lifetime
- 1965-12-22 NL NL6516741A patent/NL6516741A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR1460438A (en) | 1966-11-25 |
BE674037A (en) | 1966-04-15 |
SE305024B (en) | 1968-10-14 |
US3401318A (en) | 1968-09-10 |
NL6516741A (en) | 1966-06-23 |
DE1465450B1 (en) | 1970-07-23 |
GB1065930A (en) | 1967-04-19 |
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