DK0420629T3 - Lysemitterende eller lysregistrerende anordning og fremgangsmåde til fremstilling heraf - Google Patents
Lysemitterende eller lysregistrerende anordning og fremgangsmåde til fremstilling herafInfo
- Publication number
- DK0420629T3 DK0420629T3 DK90310563.3T DK90310563T DK0420629T3 DK 0420629 T3 DK0420629 T3 DK 0420629T3 DK 90310563 T DK90310563 T DK 90310563T DK 0420629 T3 DK0420629 T3 DK 0420629T3
- Authority
- DK
- Denmark
- Prior art keywords
- light
- emitting
- manufacture
- recording device
- encapsulating
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- -1 diallyl compound Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000178 monomer Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000011342 resin composition Substances 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
- H10F19/804—Materials of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
Landscapes
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Multi-Process Working Machines And Systems (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1254538A JPH03116857A (ja) | 1989-09-29 | 1989-09-29 | 発光または受光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0420629T3 true DK0420629T3 (da) | 1993-03-01 |
Family
ID=17266437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK90310563.3T DK0420629T3 (da) | 1989-09-29 | 1990-09-27 | Lysemitterende eller lysregistrerende anordning og fremgangsmåde til fremstilling heraf |
Country Status (9)
Country | Link |
---|---|
US (1) | US5126826A (da) |
EP (1) | EP0420629B1 (da) |
JP (1) | JPH03116857A (da) |
KR (1) | KR910007166A (da) |
CN (1) | CN1052221A (da) |
AT (1) | ATE85160T1 (da) |
CA (1) | CA2026375A1 (da) |
DE (1) | DE69000824T2 (da) |
DK (1) | DK0420629T3 (da) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198786A (ja) * | 1992-01-22 | 1993-08-06 | Sharp Corp | クリアモールドccd固体撮像素子 |
US5514627A (en) * | 1994-01-24 | 1996-05-07 | Hewlett-Packard Company | Method and apparatus for improving the performance of light emitting diodes |
DE29724543U1 (de) | 1996-06-26 | 2002-02-28 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP3173586B2 (ja) * | 1998-03-26 | 2001-06-04 | 日本電気株式会社 | 全モールド型固体撮像装置およびその製造方法 |
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6204523B1 (en) | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
DE60027719T2 (de) * | 1999-06-14 | 2007-04-26 | Cancer Research Technology Ltd. | Krebstherapie |
US6387723B1 (en) * | 2001-01-19 | 2002-05-14 | Silicon Light Machines | Reduced surface charging in silicon-based devices |
JP4275889B2 (ja) * | 2001-02-09 | 2009-06-10 | 株式会社カネカ | 発光ダイオード及びその製造方法 |
JP4275890B2 (ja) * | 2001-02-13 | 2009-06-10 | 株式会社カネカ | 発光ダイオード及びその製造方法 |
JP2002252375A (ja) * | 2001-02-23 | 2002-09-06 | Kanegafuchi Chem Ind Co Ltd | 発光ダイオード及びその製造方法 |
JP4101468B2 (ja) * | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
US6747781B2 (en) | 2001-06-25 | 2004-06-08 | Silicon Light Machines, Inc. | Method, apparatus, and diffuser for reducing laser speckle |
US6782205B2 (en) | 2001-06-25 | 2004-08-24 | Silicon Light Machines | Method and apparatus for dynamic equalization in wavelength division multiplexing |
US6646778B2 (en) | 2001-08-01 | 2003-11-11 | Silicon Light Machines | Grating light valve with encapsulated dampening gas |
US6829092B2 (en) | 2001-08-15 | 2004-12-07 | Silicon Light Machines, Inc. | Blazed grating light valve |
US6800238B1 (en) | 2002-01-15 | 2004-10-05 | Silicon Light Machines, Inc. | Method for domain patterning in low coercive field ferroelectrics |
US6728023B1 (en) | 2002-05-28 | 2004-04-27 | Silicon Light Machines | Optical device arrays with optimized image resolution |
US6767751B2 (en) | 2002-05-28 | 2004-07-27 | Silicon Light Machines, Inc. | Integrated driver process flow |
US6822797B1 (en) | 2002-05-31 | 2004-11-23 | Silicon Light Machines, Inc. | Light modulator structure for producing high-contrast operation using zero-order light |
US6829258B1 (en) | 2002-06-26 | 2004-12-07 | Silicon Light Machines, Inc. | Rapidly tunable external cavity laser |
US6813059B2 (en) | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
US6801354B1 (en) | 2002-08-20 | 2004-10-05 | Silicon Light Machines, Inc. | 2-D diffraction grating for substantially eliminating polarization dependent losses |
US6712480B1 (en) | 2002-09-27 | 2004-03-30 | Silicon Light Machines | Controlled curvature of stressed micro-structures |
JP4360595B2 (ja) * | 2002-10-18 | 2009-11-11 | ペルノックス株式会社 | 光電変換装置 |
JP2004186168A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
US6829077B1 (en) | 2003-02-28 | 2004-12-07 | Silicon Light Machines, Inc. | Diffractive light modulator with dynamically rotatable diffraction plane |
US6806997B1 (en) | 2003-02-28 | 2004-10-19 | Silicon Light Machines, Inc. | Patterned diffractive light modulator ribbon for PDL reduction |
JP2006049533A (ja) * | 2004-08-04 | 2006-02-16 | Wacker Asahikasei Silicone Co Ltd | 樹脂封止発光ダイオード装置及び封止方法 |
CN101308836B (zh) * | 2007-05-18 | 2011-11-02 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管、发光二极管组件及发光二极管灯串 |
JP4807522B2 (ja) * | 2007-09-18 | 2011-11-02 | 株式会社朝日ラバー | 半導体光学素子部品のはんだ付け方法及び半導体光学素子部品 |
TWI370216B (en) * | 2009-06-29 | 2012-08-11 | Lextar Electronics Corp | Led lighting device |
US9153755B2 (en) * | 2011-10-18 | 2015-10-06 | Nitto Denko Corporation | Silicone resin sheet, cured sheet, and light emitting diode device and producing method thereof |
US9349927B2 (en) * | 2011-10-18 | 2016-05-24 | Nitto Denko Corporation | Encapsulating sheet and optical semiconductor element device |
EP2682738B1 (de) * | 2012-07-05 | 2020-12-23 | Atlas Material Testing Technology GmbH | Detektion der Emissionsstrahlung einer UV-Lichtemissionsdiode durch eine baugleiche UV-Lichtempfangsdiode |
DE102012108413A1 (de) * | 2012-09-10 | 2014-03-13 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauteil, Optoelektronisches Bauelement und Verfahren zur Herstellung des optoelektronischen Bauelements |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032963A (en) * | 1974-09-03 | 1977-06-28 | Motorola, Inc. | Package and method for a semiconductor radiant energy emitting device |
GB1585477A (en) * | 1976-01-26 | 1981-03-04 | Gen Electric | Semiconductors |
US4278784A (en) * | 1980-02-06 | 1981-07-14 | Western Electric Company, Inc. | Encapsulated electronic devices and encapsulating compositions |
IT1130285B (it) * | 1980-03-05 | 1986-06-11 | Anic Spa | Procedimento per la sintesi di allil carbonati di alcoli poliidrici e loro derivati |
US4480009A (en) * | 1980-12-15 | 1984-10-30 | M&T Chemicals Inc. | Siloxane-containing polymers |
EP0076656B1 (en) * | 1981-10-03 | 1988-06-01 | Japan Synthetic Rubber Co., Ltd. | Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same |
JPS5987840A (ja) * | 1982-11-10 | 1984-05-21 | Toray Silicone Co Ltd | 半導体装置 |
FR2549291B2 (fr) * | 1982-10-29 | 1986-05-09 | Radiotechnique Compelec | Procede d'encapsulation de composants electroniques par extrusion de matiere plastique et applications a la fabrication de voyants lumineux et a l'encapsulation de circuits electroniques |
IT1160172B (it) * | 1983-01-13 | 1987-03-04 | Anic Spa | Composizione liquida polimerizzabile, atta a produrre polimeri con elevate caratteristiche ottiche e meccaniche e polimeri e manufatti ottenuti da detta composizione |
US4777520A (en) * | 1986-03-27 | 1988-10-11 | Oki Electric Industry Co. Ltd. | Heat-resistant plastic semiconductor device |
US5101264A (en) * | 1988-03-31 | 1992-03-31 | Mitsui Petrochemical Ind. | Light-emitting or receiving device with smooth and hard encapsulant resin |
-
1989
- 1989-09-29 JP JP1254538A patent/JPH03116857A/ja active Pending
-
1990
- 1990-09-27 EP EP90310563A patent/EP0420629B1/en not_active Expired - Lifetime
- 1990-09-27 AT AT90310563T patent/ATE85160T1/de not_active IP Right Cessation
- 1990-09-27 CA CA002026375A patent/CA2026375A1/en not_active Abandoned
- 1990-09-27 DE DE9090310563T patent/DE69000824T2/de not_active Expired - Fee Related
- 1990-09-27 DK DK90310563.3T patent/DK0420629T3/da active
- 1990-09-27 US US07/588,835 patent/US5126826A/en not_active Expired - Fee Related
- 1990-09-29 CN CN90109000A patent/CN1052221A/zh active Pending
- 1990-09-29 KR KR1019900015692A patent/KR910007166A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH03116857A (ja) | 1991-05-17 |
US5126826A (en) | 1992-06-30 |
CN1052221A (zh) | 1991-06-12 |
EP0420629B1 (en) | 1993-01-27 |
EP0420629A1 (en) | 1991-04-03 |
CA2026375A1 (en) | 1991-03-30 |
DE69000824T2 (de) | 1993-05-19 |
KR910007166A (ko) | 1991-04-30 |
DE69000824D1 (de) | 1993-03-11 |
ATE85160T1 (de) | 1993-02-15 |
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