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DE926378C - Electrically asymmetrically conductive system, in particular dry rectifier, with a sequence of semiconductor layers - Google Patents

Electrically asymmetrically conductive system, in particular dry rectifier, with a sequence of semiconductor layers

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Publication number
DE926378C
DE926378C DEP12855D DEP0012855D DE926378C DE 926378 C DE926378 C DE 926378C DE P12855 D DEP12855 D DE P12855D DE P0012855 D DEP0012855 D DE P0012855D DE 926378 C DE926378 C DE 926378C
Authority
DE
Germany
Prior art keywords
semiconductor
semiconductors
vol
excess
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEP12855D
Other languages
German (de)
Inventor
Siegfried Dr Rer Nat Poganski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DEP12855D priority Critical patent/DE926378C/en
Application granted granted Critical
Publication of DE926378C publication Critical patent/DE926378C/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/042—Preparation of foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

Bei umfangreichen Untersuchungen hat sich herausgestellt, daß nicht nur an der Grenze zwischen einem Metall und einem Halbleiter, sondern auch an der Grenze zwischen einem Überschuß- und einem Defekthalbleiter eine unipolare Leitfähigkeit auftreten kann, sofern die Zahl der freien Leitungsträger in den beiden aneinander angrenzenden Halbleitern kleiner ist als io18cm-8. Andererseits ist es möglich, zwischen derartigen Überschuß- oder Defekthalbleitern undExtensive investigations have shown that unipolar conductivity can occur not only at the boundary between a metal and a semiconductor, but also at the boundary between an excess and a defect semiconductor, provided that the number of free conductor carriers in the two adjacent semiconductors is smaller than io 18 cm- 8 . On the other hand, it is possible between such excess or defect semiconductors and

ίο einem gut leitenden Halbleiter (spez. Leitfähigkeit größer als io-*Ohm~1cm-1) mit gemischter Leitfähigkeit einen sperrschichtfreien Übergang zu erhalten. Ordnet man entsprechend der Abbildung zwischen zwei gut leitenden Elektroden 6, i, z. B. zwischen zwei Metallen, eine Schichtenfolge von Halbleitern derart an, daß auf der Trägerelektrode 1, z. B. Aluminium, zunächst ein gemischter Halbleiter 2, wie z. B. Wismut (IH)-selenid (Bi2 Se3) oder Bleisuperoxyd (Pb O2), dann ein Defekthalbleiter 3, wie z. B. Selen oder Kupferoxydul, ferner ein Überschußhalbleiter 4, wie z. B. Wismut (H)-selenid (Bi Se) oder Zinkoxyd, und schließlich wiederum ein gemischter Halbleiters angeordnet ist, der seinerseits an die Gegenelektrode, beispielsweise aus Wismut, angrenzt, so entsteht ein System, dessen Übergänge 7 bis 10 Metall/Halbleiter und gemischter Halbleiter/Defekt- oder Überschußhalbleiter sperrschichtfrei sind, während an der Grenze 11 Überschußhalbleiter/Defekthalbleiter eine ausgeprägte unipolare Leitfähigkeit auftritt. Die oben wiedergegebene Anordnung ist z. B. imstande, Sperr-Spannungen von 30 bis 40 Volt bei den üblichen Widerständen in Flußrichtung zu sperren.ίο a well-conducting semiconductor (specific conductivity greater than io- * ohm ~ 1 cm- 1 ) with mixed conductivity to obtain a barrier-free transition. If one arranges according to the figure between two highly conductive electrodes 6, i, z. B. between two metals, a layer sequence of semiconductors such that on the carrier electrode 1, z. B. aluminum, first a mixed semiconductor 2, such as. B. bismuth (IH) selenide (Bi 2 Se 3 ) or lead peroxide (Pb O 2 ), then a defect semiconductor 3, such as. B. selenium or copper oxide, also an excess semiconductor 4, such as. B. bismuth (H) selenide (Bi Se) or zinc oxide, and finally in turn a mixed semiconductor is arranged, which in turn adjoins the counter electrode, for example made of bismuth, the result is a system whose transitions 7 to 10 metal / semiconductor and mixed semiconductor / defect or excess semiconductor are free of barrier layers, while at the boundary 11 excess semiconductor / defect semiconductor a pronounced unipolar conductivity occurs. The arrangement shown above is e.g. B. able to block blocking voltages of 30 to 40 volts with the usual resistors in the flow direction.

Es ist bei Sperrschichtgleichrichtern bereits bekannt, zwischen* die Abnahmeelektroden und den Halbleiter bzw. die Sperrschicht Schichten einzufügen, die eine sperrschichtfreie Kontaktierung ermöglichen. Es ist auch bekannt, ein Gleichrichtersystem mit folgenden Schichten aufzubauen: Metall, Cadmiumselenid', Selen und Metall, wobei jedoch das Cadmiumselenid als Isolator wirkt. Daß Cadmiumselenid auch einen Überschußhalbleiter bilden kann, ist ebenfalls bekannt.It is already known in junction rectifiers, between * the pick-up electrodes and the semiconductor or to insert the barrier layer layers that enable barrier-free contact. It is also known to build a rectifier system with the following layers: metal, cadmium selenide, selenium and metal, but the cadmium selenide acts as an insulator. That cadmium selenide is also an excess semiconductor can form is also known.

ίο Um den Flußwiderstand niedrig zu halten, ist es notwendig, daß die Schichten aus den gemischten Halbleitern möglichst dünn sind und ihre spezifische Leitfähigkeit möglichst hoch ist. Als eine ausreichende Schichtdicke hat sich der Wert 5-io-8 cm erwiesen, als untere Grenze der spez. Leitfähigkeit, der. Wert IQ-4OhIn-1Cm-1. Die Leitfähigkeit der Überschußlond Defekthalbleiter darf dagegen einen bestimmten Wert nicht überschreiten, weil sonst das Sperrvermögen sinkt. Ausgeprägte unipolare Eigenschaftenίο In order to keep the flow resistance low, it is necessary that the layers made of the mixed semiconductors are as thin as possible and that their specific conductivity is as high as possible. When a sufficient layer thickness, the value has proven 5-io- 8 cm, the lower limit of the specific gravity. Conductivity, the. Value IQ -4 OhIn- 1 Cm- 1 . On the other hand, the conductivity of the excess surface defect semiconductors must not exceed a certain value, because otherwise the blocking capacity will decrease. Pronounced unipolar properties

wurden an der Grenze Überschußhalbleiter/Defekt-· halbleiter dann beobachtet, wenn die Zahl der freien Leitungsträger geringer ist als 1018Cm-3. Zur vollen Entfaltung der Sperrwirkung hat sich eine Dicke der Überschuß- bzw. Defekthalbleiterschichten von etwa 10-3cm als ausreichend erwiesen. Es ist daher unzweckmäßig, dickere Schichten zu verwenden, weil dadurch der Flußwiderstand erhöht wird.were observed at the boundary between excess semiconductors / defective semiconductors when the number of free conductor carriers is less than 10 18 cm -3 . To full development of the barrier effect, a thickness of surplus or defective semiconductor layers has cm of about 10- 3 proven sufficient. It is therefore impractical to use thicker layers because this increases the flow resistance.

Die beschriebene Anordnung gestattet es nun auf einfache Weise, die angegebene Schichtenfolge mehrfach auf einer Trägerelektrode anzubringen und das Sperrvermögen eines derartigen Systems somit um das Mehrfache zu steigern.The arrangement described now makes it possible in a simple manner to use the specified sequence of layers several times to be attached to a carrier electrode and thus the blocking capacity of such a system to increase several times.

Claims (6)

PATENTANSPRÜCHE:PATENT CLAIMS: i. Elektrisch unsymmetrisch leitendes System, insbesondere Trockengleichrichter, bei dem zwischen zwei gut leitenden Elektroden eine Folge von Halbleiterschichten angeordnet ist, die sich durch ihren Leitfähigkeitscharakter unterscheiden, dadurch gekennzeichnet, daß die Schichten in einer solchen Reihenfolge angeordnet sind, daß auf der einen Elektrode (Trägerelektrode) zunächst ein gemischter Halbleiter, dann ein Defekthalbleiter (bzw. Überschußhalbleiter), ferner ein Überschuß-i. Electrically asymmetrically conductive system, especially dry rectifier, in which between two highly conductive electrodes a sequence of semiconductor layers is arranged, which are differ by their conductivity character, characterized in that the layers in one are arranged in such a sequence that on one electrode (carrier electrode) initially one mixed semiconductor, then a defect semiconductor (or excess semiconductor), furthermore an excess halbleiter (bzw. Defekthalbleiter) und schließlich wiederum ein Halbleiter mit gemischter Leitfähigkeit angeordnet ist, welcher mit der zweiten, gut leitenden Elektrode bedeckt ist.semiconductors (or defect semiconductors) and finally a semiconductor with mixed conductivity is arranged, which is covered with the second, highly conductive electrode. 2. System nach Anspruch i, dadurch gekennzeichnet, daß die Halbleiterschichtenfolge Defekthalbleiter/Uberschußhalbleiter/gemischter Halbleileiter mehrfach zwischen zwei gut leitenden Elektroden angeordnet ist.2. System according to claim i, characterized in that that the semiconductor layer sequence is defect semiconductors / excess semiconductors / mixed Semiconductor is arranged several times between two highly conductive electrodes. 3. Systemnach Anspruch 1 und a, dadurch gekennzeichnet, daß die elektrische Leitfähigkeit der gemischten Halbleiter größer ist als 10- * Ohm- 1Cm- 1. 3. System according to claim 1 and a, characterized in that the electrical conductivity of the mixed semiconductors is greater than 10- * ohm- 1 cm- 1 . 4. System nach Anspruch 1 und folgenden, dadurch gekennzeichnet, daß die Dichte der freien Leitungsträger in den Überschuß- und Defekthalbleitern kleiner ist als io18cm-s.4. System according to claim 1 and following, characterized in that the density of the free conductor carriers in the excess and defect semiconductors is less than io 18 cm- s . 5. System nach Anspruch 1 und folgenden, dadurch gekennzeichnet, daß die Schichten aus den gemischten Halbleitern eine Dicke von höchstens 10- 4cm besitzen.5. System according to claim 1 and following, characterized in that the layers of the mixed semiconductors have cm, a thickness of at most 10. 4 6. System nach Anspruch 1 und folgenden, dadurch gekennzeichnet, daß die Dicke der Überschuß- und Defekthalbleiterschichten mindestens ίο-5 und höchstens io~2cm beträgt.6. System according to claim 1 and following, characterized in that the thickness of the excess and defect semiconductor layers is at least ίο- 5 and at most io ~ 2 cm. Angezogene Druckschriften:
"■Deutsche Patentschriften Nr. 550710, 600410, 720445,742762;Referred publications:
"■ German patent specifications No. 550710, 600410, 720445,742762; französische Patentschrift Nr. 657 791;French Patent No. 657 791; britische Patentschrift Nr. 476 846;British Patent No. 476,846; Karl Seiler »Detektoren«, Äbschn. 5, 2, S. 275; .»Naturforschung und Medizin in Deutschland«, bis 1946, Bd. 15;Karl Seiler "Detectors", Abbn. 5, 2, p. 275; . "Nature research and medicine in Germany", until 1946, vol. 15; »Elektronenemission« Teil I;"»Electron Emission« Part I; " »Journal of Techn. Phys.«, 5, 1938, S. 87 bis 95;"Journal of Techn. Phys.", 5, 1938, pp. 87 to 95; »Physical Review«, Bd. 72 v. 1947, S. 641/642, und Bd. 72 Nr. 12, S. 1267/1268;"Physical Review", vol. 72 v. 1947, pp. 641/642, and Vol. 72 No. 12, pp. 1267/1268; Zeitschr. »Die Naturwissenschaften«, Heft 38 v.Magazine "The natural sciences", issue 38 v. 1941, s. 575;1941, p. 575; Zeitschr. »ASEA Journal« v. Aug. 1939, VoIXVI, Nr. 8, S. 117,114,115;Magazine "ASEA Journal" v. Aug. 1939, VoIXVI, No. 8, pp. 117,114,115; »Transactions of the Electrochemical Society«, Vol. 90 (1946) S. 129 fr, 134,152/53.157;"Transactions of the Electrochemical Society", Vol. 90 (1946) p. 129 fr, 134,152 / 53,157; »Schweizer Archiv f. angewandte Wissenschaft u. Technik«, Bd. 7 (1941), S. 24, 25;"Swiss Archives for Applied Science and Technology", Vol. 7 (1941), pp. 24, 25; »Zeitschr. für Physik«, Bd. 118, 1941/42, S. 561;»Magazine for Physics ", Vol. 118, 1941/42, p. 561; »Zeitschr. für angewandte Physik«, 1953, Heft 12, S. 477.»Magazine for applied physics «, 1953, issue 12, P. 477. Hierzu ι Blatt ZeichnungenFor this purpose ι sheet of drawings 1 9613 4.5S1 9613 4.5S
DEP12855D 1948-10-02 1948-10-02 Electrically asymmetrically conductive system, in particular dry rectifier, with a sequence of semiconductor layers Expired DE926378C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEP12855D DE926378C (en) 1948-10-02 1948-10-02 Electrically asymmetrically conductive system, in particular dry rectifier, with a sequence of semiconductor layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP12855D DE926378C (en) 1948-10-02 1948-10-02 Electrically asymmetrically conductive system, in particular dry rectifier, with a sequence of semiconductor layers

Publications (1)

Publication Number Publication Date
DE926378C true DE926378C (en) 1955-04-14

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1064638B (en) * 1956-08-28 1959-09-03 Intermetall Process for the production of area transistors from three monocrystalline layers
DE1080692B (en) * 1956-01-09 1960-04-28 Int Standard Electric Corp Semiconductor diode, in particular switching diode, with a semiconductor body made of four layers of alternately opposite conductivity types
DE1090326B (en) * 1957-03-22 1960-10-06 Int Standard Electric Corp Process for the production of a transistor with three zones from different semiconductor materials of alternating conductivity type
DE1136014B (en) * 1958-07-10 1962-09-06 Siemens Ag Semiconductor diode for switching and toggle purposes with four semiconducting zones lying one behind the other

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR657791A (en) * 1927-05-21 1929-06-13 Rectifier for alternating currents
DE550710C (en) * 1930-04-03 1932-05-17 Siemens Schuckertwerke Akt Ges Dry rectifier arrangement consisting of several rectifier elements connected in series
DE600410C (en) * 1930-12-02 1934-07-26 Siemens & Halske Akt Ges Contact rectifier element
GB476846A (en) * 1936-02-04 1937-12-16 British Thomson Houston Co Ltd Improvements in and relating to dry surface-contact rectifiers
DE720445C (en) * 1936-06-13 1942-05-15 Aeg Process for the production of dry plate rectifiers with a light metal as the base electrode material and dry plate rectifiers produced according to this process
DE742762C (en) * 1939-03-15 1943-12-10 Philips Patentverwaltung Method for manufacturing a barrier electrode system with a selenium electrode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR657791A (en) * 1927-05-21 1929-06-13 Rectifier for alternating currents
DE550710C (en) * 1930-04-03 1932-05-17 Siemens Schuckertwerke Akt Ges Dry rectifier arrangement consisting of several rectifier elements connected in series
DE600410C (en) * 1930-12-02 1934-07-26 Siemens & Halske Akt Ges Contact rectifier element
GB476846A (en) * 1936-02-04 1937-12-16 British Thomson Houston Co Ltd Improvements in and relating to dry surface-contact rectifiers
DE720445C (en) * 1936-06-13 1942-05-15 Aeg Process for the production of dry plate rectifiers with a light metal as the base electrode material and dry plate rectifiers produced according to this process
DE742762C (en) * 1939-03-15 1943-12-10 Philips Patentverwaltung Method for manufacturing a barrier electrode system with a selenium electrode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080692B (en) * 1956-01-09 1960-04-28 Int Standard Electric Corp Semiconductor diode, in particular switching diode, with a semiconductor body made of four layers of alternately opposite conductivity types
DE1064638B (en) * 1956-08-28 1959-09-03 Intermetall Process for the production of area transistors from three monocrystalline layers
DE1090326B (en) * 1957-03-22 1960-10-06 Int Standard Electric Corp Process for the production of a transistor with three zones from different semiconductor materials of alternating conductivity type
DE1136014B (en) * 1958-07-10 1962-09-06 Siemens Ag Semiconductor diode for switching and toggle purposes with four semiconducting zones lying one behind the other

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