DE891300C - Electrically asymmetrical conductive system - Google Patents
Electrically asymmetrical conductive systemInfo
- Publication number
- DE891300C DE891300C DEL10757A DEL0010757A DE891300C DE 891300 C DE891300 C DE 891300C DE L10757 A DEL10757 A DE L10757A DE L0010757 A DEL0010757 A DE L0010757A DE 891300 C DE891300 C DE 891300C
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- carbon
- conductivity
- group
- barrier electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Description
Bei elektrisch unsymmetrisch leitenden Systemen, insbesondere solchen, die mit einem Halbleiter vom Typ des Germanium oder Silicium versehen sind, besteht die Schwierigkeit, insbesondere bei der flächenhaften Ausführungsform solcher Gleichrichter die Halbleiter an ihrer Oberfläche mit einer Schicht von entgegengesetztem Leitfähigkeitscharakter zu versehen, die sowohl eine gewisse Betriebssicherheit aufweist als auch technisch leicht darstellbar ist.In electrically asymmetrically conductive systems, especially those with a semiconductor from Type of germanium or silicon are provided, there is a difficulty, especially with the planar embodiment of such rectifier the semiconductor on its surface with a To provide a layer of opposite conductivity character, which both a certain operational reliability has as well as is technically easy to represent.
Die Erfindung bezieht sich auf ein elektrisch unsymmetrisch leitendes System, insbesondere einen Sperrschichtgleichrichter oder ein steuerbares Halbleitersystem, mit einem Halbleiter aus einem der IV. Gruppe des Periodischen Systems, vorzugsweise Germanium oder Silicium oder einer Verbindung der Elemente, das sich von den bisher bekannten dadurch unterscheidet, daß sich auf dem Halbleiter auf der der Sperrelektrode zugewandten Seite eine vorzugsweise dünne Schicht befindet, die ao den entgegengesetzten Leitfähigkeitscharakter aufweist wie der Halbleiter in seinem Innern, und daß die Sperrelektrode ganz oder teilweise aus elementarem; Kohlenstoff großer Dichte besteht.The invention relates to an electrically asymmetrically conductive system, in particular one Junction rectifier or a controllable semiconductor system, with a semiconductor from one of the IV. Group of the Periodic Table, preferably germanium or silicon or a compound of the elements, which differs from the previously known in that on the Semiconductor on the side facing the barrier electrode, a preferably thin layer is located, the ao has the opposite conductivity character as the semiconductor in its interior, and that the barrier electrode wholly or partially made of elementary; High density carbon.
Bewährt hat sich ein Verfahren zur Herstellung eines solchen elektrisch unsymmetrisch leitenden Systems, bei dem auf dem Halbleiter ein Gemisch aus elementarem Kohlenstoff großer Dichte und einer oder mehrerer Substanzen, die geeignet sind, den Leitfähigkeitscharakter des Halbleiters zu ver- 3» ändern, aufgebracht wird und das System sodann einer oder mehrerer Temperaturbehandlungen unterworfen wird.A method for producing such an electrically asymmetrically conductive one has proven itself System in which on the semiconductor a mixture of elemental carbon of high density and one or more substances that are suitable for reducing the conductivity of the semiconductor. change, is applied and the system then one or more temperature treatments is subjected.
Besonders günstig ist es, die den Leitfähigkeitscharakter des Halbleiters verändernden Substanzen und den elementaren Kohlenstoff nacheinander auf-It is particularly favorable to use the substances that change the conductivity character of the semiconductor and the elemental carbon one after the other.
zubringen und sodann einer Temperaturbehandlung zu unterwerfen.and then to subject it to a temperature treatment.
Besonders geeignet sind für dieses Verfahren als den Leitfähigkeitscharakter ändernde Substanzen für überwiegend überschußleitende Halbleitermaterialien die Elemente der HI. Gruppe des Periodischen Systems und für überwiegend defekthalbleitende Materialien die Elemente der V. Gruppe des Periodischen Systems.Substances that change the conductivity character are particularly suitable for this process for predominantly excess conductive semiconductor materials the elements of the HI. Group of Periodic system and for predominantly defect semiconducting materials the elements of the V group of the periodic table.
ίο Bei Anwendung dieses Verfahrens ist es besonders günstig, unter Benutzung einer an ihrer freien Oberfläche ganz aus Kohlenstoff bestehenden Sperrelektrode diese gleichzeitig als Trägerelektrode eines weiteren gleichartig aufgebauten Systems zu verwenden. Ganz besonders vorteilhaft ist es, das System vor dem Aufbringen des Kohlenstoffes einer oder mehrerer Temperaturbehandlungen zu unterwerfen.ίο It is special when using this procedure cheap, using one consisting entirely of carbon on its free surface Blocking electrode this at the same time as a carrier electrode of another similarly constructed System to use. It is particularly advantageous to run the system before applying the carbon subject to one or more temperature treatments.
Mit Vorteil wird der als Sperrelektrode dienende dichte Kohlenstoff aufgedampft, und zwar derart, daß aus einem unter Vakuum oder vermindertem Druck brennender Kohlenstoffbogen entstehender Kohlenstoffdampf niedergeschlagen wird.The dense carbon serving as a barrier electrode is advantageously vapor deposited in such a way that that arises from a carbon arc burning under vacuum or reduced pressure Carbon vapor is deposited.
Claims (8)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL10757A DE891300C (en) | 1951-11-15 | 1951-11-15 | Electrically asymmetrical conductive system |
| FR1066350D FR1066350A (en) | 1951-11-15 | 1952-11-07 | Electrically asymmetric conductive system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL10757A DE891300C (en) | 1951-11-15 | 1951-11-15 | Electrically asymmetrical conductive system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE891300C true DE891300C (en) | 1953-08-13 |
Family
ID=7258563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL10757A Expired DE891300C (en) | 1951-11-15 | 1951-11-15 | Electrically asymmetrical conductive system |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE891300C (en) |
| FR (1) | FR1066350A (en) |
-
1951
- 1951-11-15 DE DEL10757A patent/DE891300C/en not_active Expired
-
1952
- 1952-11-07 FR FR1066350D patent/FR1066350A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1066350A (en) | 1954-06-03 |
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