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DE69942669D1 - SUBMICRONE METALLIZATION USING ELECTROCHEMICAL COATING - Google Patents

SUBMICRONE METALLIZATION USING ELECTROCHEMICAL COATING

Info

Publication number
DE69942669D1
DE69942669D1 DE69942669T DE69942669T DE69942669D1 DE 69942669 D1 DE69942669 D1 DE 69942669D1 DE 69942669 T DE69942669 T DE 69942669T DE 69942669 T DE69942669 T DE 69942669T DE 69942669 D1 DE69942669 D1 DE 69942669D1
Authority
DE
Germany
Prior art keywords
electroplating
micro
metal
current density
recessed structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69942669T
Other languages
German (de)
Inventor
Linlin Chen
Lyndon W Graham
Thomas L Ritzdorf
Dakin Fulton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Application granted granted Critical
Publication of DE69942669D1 publication Critical patent/DE69942669D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Secondary Cells (AREA)

Abstract

Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.
DE69942669T 1998-10-05 1999-10-05 SUBMICRONE METALLIZATION USING ELECTROCHEMICAL COATING Expired - Lifetime DE69942669D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10306198P 1998-10-05 1998-10-05
PCT/US1999/023187 WO2000020662A1 (en) 1998-10-05 1999-10-05 Submicron metallization using electrochemical deposition

Publications (1)

Publication Number Publication Date
DE69942669D1 true DE69942669D1 (en) 2010-09-23

Family

ID=22293166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69942669T Expired - Lifetime DE69942669D1 (en) 1998-10-05 1999-10-05 SUBMICRONE METALLIZATION USING ELECTROCHEMICAL COATING

Country Status (5)

Country Link
EP (1) EP1125007B1 (en)
JP (1) JP2002526663A (en)
AT (1) ATE477353T1 (en)
DE (1) DE69942669D1 (en)
WO (1) WO2000020662A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244677B2 (en) 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
JP3641372B2 (en) * 1998-10-21 2005-04-20 株式会社荏原製作所 Electrolytic plating method and electrolytic plating apparatus
US6913680B1 (en) * 2000-05-02 2005-07-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
JP2002121699A (en) * 2000-05-25 2002-04-26 Nippon Techno Kk Electroplating method using combination of vibrating flow and impulsive plating current of plating bath
JP5000941B2 (en) * 2006-07-27 2012-08-15 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP5767154B2 (en) * 2012-04-13 2015-08-19 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP5749302B2 (en) * 2013-08-20 2015-07-15 株式会社荏原製作所 Plating method
JP6450560B2 (en) * 2014-10-24 2019-01-09 新日本無線株式会社 Semiconductor device and manufacturing method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR960114A (en) * 1942-05-04 1950-04-13
US3894918A (en) * 1973-12-20 1975-07-15 Western Electric Co Methods of treating portions of articles
US4250004A (en) * 1980-02-25 1981-02-10 Olin Corporation Process for the preparation of low overvoltage electrodes
US4514265A (en) * 1984-07-05 1985-04-30 Rca Corporation Bonding pads for semiconductor devices
US4869971A (en) * 1986-05-22 1989-09-26 Nee Chin Cheng Multilayer pulsed-current electrodeposition process
JPH03104230A (en) * 1989-09-19 1991-05-01 Fujitsu Ltd Manufacturing method of semiconductor device
JPH03208347A (en) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp Formation of bump
JPH07336017A (en) * 1994-06-08 1995-12-22 Hitachi Ltd Method of manufacturing thin film circuit by current reversal electrolysis method, thin film circuit board using the same, thin film multilayer circuit board and electronic circuit device
US5605615A (en) * 1994-12-05 1997-02-25 Motorola, Inc. Method and apparatus for plating metals
JP3561582B2 (en) * 1996-09-18 2004-09-02 沖電気工業株式会社 Method for manufacturing semiconductor device
JPH1098268A (en) * 1996-09-24 1998-04-14 Oki Electric Ind Co Ltd Method for plating columnar conductor and multi-layered printed wiring board obtained by it
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
JP3694594B2 (en) * 1998-09-03 2005-09-14 株式会社荏原製作所 Method for hole-filling plating of substrate having fine holes and / or fine grooves

Also Published As

Publication number Publication date
EP1125007B1 (en) 2010-08-11
WO2000020662A9 (en) 2000-09-14
EP1125007A1 (en) 2001-08-22
WO2000020662A1 (en) 2000-04-13
EP1125007A4 (en) 2003-05-28
JP2002526663A (en) 2002-08-20
ATE477353T1 (en) 2010-08-15

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Legal Events

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R081 Change of applicant/patentee

Ref document number: 1125007

Country of ref document: EP

Owner name: APPLIED MATERIALS, INC. (N.D.GES.D. STAATES DE, US

Free format text: FORMER OWNER: SEMITOOL, INC., KALISPELL, US

Effective date: 20120801