[go: up one dir, main page]

DE69901790D1 - Tunneleffekt-magnetowiderstand und anwendung eines solchen magnetowiderstands in einem magnetischen sensor - Google Patents

Tunneleffekt-magnetowiderstand und anwendung eines solchen magnetowiderstands in einem magnetischen sensor

Info

Publication number
DE69901790D1
DE69901790D1 DE69901790T DE69901790T DE69901790D1 DE 69901790 D1 DE69901790 D1 DE 69901790D1 DE 69901790 T DE69901790 T DE 69901790T DE 69901790 T DE69901790 T DE 69901790T DE 69901790 D1 DE69901790 D1 DE 69901790D1
Authority
DE
Germany
Prior art keywords
magnetic
magnetic resistance
application
tunnel effect
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69901790T
Other languages
English (en)
Other versions
DE69901790T2 (de
Inventor
Bernard Dieny
Laurence Giacomoni
Anatoly Vedyaev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9522845&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69901790(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69901790D1 publication Critical patent/DE69901790D1/de
Application granted granted Critical
Publication of DE69901790T2 publication Critical patent/DE69901790T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
  • Thin Magnetic Films (AREA)
DE69901790T 1998-02-11 1999-02-10 Tunneleffekt-magnetowiderstand und anwendung eines solchen magnetowiderstands in einem magnetischen sensor Expired - Fee Related DE69901790T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9801616A FR2774774B1 (fr) 1998-02-11 1998-02-11 Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance
PCT/FR1999/000289 WO1999041792A1 (fr) 1998-02-11 1999-02-10 Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance

Publications (2)

Publication Number Publication Date
DE69901790D1 true DE69901790D1 (de) 2002-07-18
DE69901790T2 DE69901790T2 (de) 2003-02-06

Family

ID=9522845

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69901790T Expired - Fee Related DE69901790T2 (de) 1998-02-11 1999-02-10 Tunneleffekt-magnetowiderstand und anwendung eines solchen magnetowiderstands in einem magnetischen sensor

Country Status (7)

Country Link
US (1) US6462641B1 (de)
EP (1) EP1055259B1 (de)
JP (1) JP2002503887A (de)
DE (1) DE69901790T2 (de)
ES (1) ES2177227T3 (de)
FR (1) FR2774774B1 (de)
WO (1) WO1999041792A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2814592B1 (fr) * 2000-09-26 2003-01-03 Commissariat Energie Atomique Dispositif a vanne de spin a reflexion electronique speculaire dependant du spin
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
US6771473B2 (en) * 2001-01-22 2004-08-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element and method for producing the same
US6847509B2 (en) 2001-02-01 2005-01-25 Kabushiki Kaisha Toshiba Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus
WO2002099905A1 (en) * 2001-05-31 2002-12-12 National Institute Of Advanced Industrial Science And Technology Tunnel magnetoresistance element
JP2002359413A (ja) * 2001-05-31 2002-12-13 National Institute Of Advanced Industrial & Technology 強磁性トンネル磁気抵抗素子
JP4184668B2 (ja) * 2002-01-10 2008-11-19 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子
US6638774B2 (en) * 2002-01-15 2003-10-28 Infineon Technologies, Ag Method of making resistive memory elements with reduced roughness
JP2003218425A (ja) 2002-01-18 2003-07-31 Hitachi Ltd 有限電圧下で高磁気抵抗率を示す強磁性トンネル接合素子、および、それを用いた強磁気抵抗効果型ヘッド、磁気ヘッドスライダ、ならびに磁気ディスク装置
JP3836788B2 (ja) * 2002-12-26 2006-10-25 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果型ヘッドおよび磁気記録再生装置
DE10309244A1 (de) * 2003-03-03 2004-09-23 Siemens Ag Magnetisches Speicherelement, insbesondere MRAM-Element, mit einem TMR-Dünnschichtensystem
US6762954B1 (en) 2003-05-09 2004-07-13 Alan S. Edelstein Local probe of magnetic properties
US20080102320A1 (en) * 2004-04-15 2008-05-01 Edelstein Alan S Non-erasable magnetic identification media
US7324312B2 (en) * 2004-08-30 2008-01-29 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing exchange stabilization
US7397637B2 (en) * 2004-08-30 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing enhanced magnetostatic stabilization
US7233142B1 (en) 2004-09-02 2007-06-19 United States Of America As Represented By The Secretary Of The Army Planer reader of non-erasable magnetic media and local permeability
US7394624B2 (en) * 2005-02-23 2008-07-01 Hitachi Global Storage Technologies Netherlands B.V. Read sensor with a uniform longitudinal bias stack
US7606007B2 (en) * 2006-02-17 2009-10-20 Hitachi Global Storage Technologies Netherlands B.V. Shield stabilization for magnetoresistive sensors
US20070211392A1 (en) * 2006-03-08 2007-09-13 Zeltser Alexander M Spin valve with Ir-Mn-Cr pinning layer and seed layer including Pt-Mn
EP2065886A1 (de) * 2007-11-27 2009-06-03 Hitachi Ltd. Magnetoresistive Vorrichtung
CN102478546B (zh) * 2010-11-30 2015-11-18 北京德锐磁星科技有限公司 微机电磁性生物传感器
JP5739685B2 (ja) * 2011-02-14 2015-06-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
US8884616B2 (en) * 2011-06-22 2014-11-11 Infineon Technologies Ag XMR angle sensors
US9030780B2 (en) 2012-08-08 2015-05-12 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for reading a non-volatile memory using a spin torque oscillator
US9245617B2 (en) 2013-12-17 2016-01-26 The United States Of America As Represented By The Secretary Of The Army Nonvolatile memory cells programable by phase change and method
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
JP6763887B2 (ja) 2015-06-05 2020-09-30 アレグロ・マイクロシステムズ・エルエルシー 磁界に対する応答が改善されたスピンバルブ磁気抵抗効果素子
FR3054364B1 (fr) 2016-07-20 2018-08-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant un empilement de n motifs
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2248566B1 (de) * 1973-10-23 1976-11-19 Cii
DE3820475C1 (de) 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
WO1995010123A1 (en) * 1993-10-06 1995-04-13 Philips Electronics N.V. Magneto-resistance device, and magnetic head employing such a device
US5712612A (en) * 1996-01-02 1998-01-27 Hewlett-Packard Company Tunneling ferrimagnetic magnetoresistive sensor
US6124711A (en) * 1996-01-19 2000-09-26 Fujitsu Limited Magnetic sensor using tunnel resistance to detect an external magnetic field
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
TW367493B (en) * 1996-04-30 1999-08-21 Toshiba Corp Reluctance component
EP0844679B1 (de) * 1996-05-28 2003-11-19 Shimadzu Corporation Magnetowiderstandseffekt-element, magnetowiderstandseffekt-magnetkopf, speicherelement und herstellungsverfahren

Also Published As

Publication number Publication date
FR2774774B1 (fr) 2000-03-03
ES2177227T3 (es) 2002-12-01
EP1055259A1 (de) 2000-11-29
FR2774774A1 (fr) 1999-08-13
EP1055259B1 (de) 2002-06-12
DE69901790T2 (de) 2003-02-06
WO1999041792A1 (fr) 1999-08-19
JP2002503887A (ja) 2002-02-05
US6462641B1 (en) 2002-10-08

Similar Documents

Publication Publication Date Title
DE69901790D1 (de) Tunneleffekt-magnetowiderstand und anwendung eines solchen magnetowiderstands in einem magnetischen sensor
DE69923386D1 (de) Bauelement mit magnetischem Material und Adressierverfahren dafür
DE69940577D1 (de) Nahfeld Abtastkopf und Herstellungsverfahren dafür
EP0797447A4 (de) Heterozyklische pentapeptitische und halophenyl amide als hemmer für menschlichen krebs
DE69832019D1 (de) Verfahren zur Löschung und Programmierung eines Speichers in Kleinspannungs-Anwendungen und Anwendungen mit geringer Leistung
DE69728310D1 (de) Belastungsmessung eines Elementes und Überwachung seiner Integrität
DE69930313D1 (de) Aminoplastharz-photochrome beschichtungszusammensetzung und photochrome gegenstände
DE69930312D1 (de) Aminoplastharz-photochrome beschichtungszusammensetzung und photochrome gegenstände
EE9700364A (et) Kehatakistuse muutuste mõõte- ja indikatsioonisüsteem
DE19781096T1 (de) Verfahren und Vorrichtungen zum Bestimmen eines Analyten in Körperfluid
NO971742D0 (no) Sandsil med ökt erosjon- og sammenbruddmotstand
DE69924153D1 (de) Polyanhydride photochrome beschichtungszusammensetzung und photochrome gegenstände
DE69936461D1 (de) Magnetsensor und zugehöriges herstellungsverfahren
ATE275375T1 (de) Pflaster, anordnung bestehend aus einem pflaster und einem behälter, und verfahren
DE69825219D1 (de) Magnetowiderstandseffektfilm und Magnetowiderstandseffekttmagnetkopf
DE69526078D1 (de) Diphenylsulfonderivate und daraus hergestelltes aufzeichnungsmaterial
DE69719836D1 (de) Wasserdichtes Material und Verfahren zu seiner Anwendung
DE69511017D1 (de) Verfahren und anordnung zur lokalen änderung der magnetisierungsrichtung in einem körper aus magnetischem material
FI973753L (fi) Menetelmä suspensiossa olevien hiukkasten mittaamiseksi ja mittalaite
DE69634538D1 (de) Einkapselungsmasse mit fliessmitteleigenschaften und verwendungsverfahren
DE69922170D1 (de) Sensorvorrichtung und zugehöriges verfahren
DE69926928D1 (de) Offener und abgeschirmter supraleitender Magnet
DE69722860D1 (de) Magnetkopf mit magnetoresistivem sensor und mit den magnetkopf versehende abtastvorrichtung
FI981983A0 (fi) Ohjausjärjestely ja menetelmä karsintalaitteistossa
KR960015835A (ko) 플러그 저항과 계면 저항을 분리하여 측정하는 방법과 그 테스트 패턴

Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee