[go: up one dir, main page]

DE69901513D1 - Simultaner flash-speicher mit flexibler speicherbankeinteilung - Google Patents

Simultaner flash-speicher mit flexibler speicherbankeinteilung

Info

Publication number
DE69901513D1
DE69901513D1 DE69901513T DE69901513T DE69901513D1 DE 69901513 D1 DE69901513 D1 DE 69901513D1 DE 69901513 T DE69901513 T DE 69901513T DE 69901513 T DE69901513 T DE 69901513T DE 69901513 D1 DE69901513 D1 DE 69901513D1
Authority
DE
Germany
Prior art keywords
flexible
flash memory
memory
simultaneous flash
bank classification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69901513T
Other languages
English (en)
Other versions
DE69901513T2 (de
Inventor
Tiao-Hua Kuo
Yasushi Kasa
Nancy Leong
Johnny Chen
Buskirk Michael Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Publication of DE69901513D1 publication Critical patent/DE69901513D1/de
Application granted granted Critical
Publication of DE69901513T2 publication Critical patent/DE69901513T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE69901513T 1998-09-23 1999-08-16 Simultaner flash-speicher mit flexibler speicherbankeinteilung Expired - Lifetime DE69901513T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/159,142 US5995415A (en) 1998-09-23 1998-09-23 Simultaneous operation flash memory device with a flexible bank partition architecture
PCT/US1999/018678 WO2000017884A1 (en) 1998-09-23 1999-08-16 Simultaneous operation flash memory device with a flexible bank partition architecture

Publications (2)

Publication Number Publication Date
DE69901513D1 true DE69901513D1 (de) 2002-06-20
DE69901513T2 DE69901513T2 (de) 2003-03-20

Family

ID=22571254

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69901513T Expired - Lifetime DE69901513T2 (de) 1998-09-23 1999-08-16 Simultaner flash-speicher mit flexibler speicherbankeinteilung

Country Status (7)

Country Link
US (1) US5995415A (de)
EP (1) EP1116239B1 (de)
JP (1) JP2002525785A (de)
KR (1) KR100544756B1 (de)
DE (1) DE69901513T2 (de)
TW (1) TW442799B (de)
WO (1) WO2000017884A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3464621B2 (ja) * 1999-04-01 2003-11-10 フーリエ有限会社 バンク可変メモリ
DE19916913A1 (de) * 1999-04-14 2000-10-26 Siemens Ag Halbleiterspeicher mit Speicherbänken
US6591327B1 (en) * 1999-06-22 2003-07-08 Silicon Storage Technology, Inc. Flash memory with alterable erase sector size
US6201753B1 (en) 1999-10-19 2001-03-13 Advanced Micro Devices, Inc. Latching CAM data in a flash memory device
US6111787A (en) * 1999-10-19 2000-08-29 Advanced Micro Devices, Inc. Address transistion detect timing architecture for a simultaneous operation flash memory device
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6285583B1 (en) 2000-02-17 2001-09-04 Advanced Micro Devices, Inc. High speed sensing to detect write protect state in a flash memory device
US6772273B1 (en) * 2000-06-29 2004-08-03 Intel Corporation Block-level read while write method and apparatus
US6931498B2 (en) * 2001-04-03 2005-08-16 Intel Corporation Status register architecture for flexible read-while-write device
KR100422445B1 (ko) * 2001-06-01 2004-03-12 삼성전자주식회사 선택적 배속동작 모드를 갖는 불휘발성 반도체 메모리 장치
JP3827540B2 (ja) * 2001-06-28 2006-09-27 シャープ株式会社 不揮発性半導体記憶装置および情報機器
US7009910B2 (en) * 2001-08-23 2006-03-07 Winbond Electronics Corporation Semiconductor memory having a flexible dual-bank architecture with improved row decoding
US6781914B2 (en) 2001-08-23 2004-08-24 Winbond Electronics Corp. Flash memory having a flexible bank partition
CN100433194C (zh) * 2002-12-10 2008-11-12 华邦电子股份有限公司 具有弹性排区分区的闪存及形成方法
JP2006196700A (ja) * 2005-01-13 2006-07-27 Toshiba Corp 不揮発性半導体記憶装置
US9189199B2 (en) * 2012-12-06 2015-11-17 Nvidia Corporation Folded FIFO memory generator
US10210298B2 (en) 2015-11-24 2019-02-19 Altera Corporation Embedded memory blocks with adjustable memory boundaries
KR20190075334A (ko) 2017-12-21 2019-07-01 에스케이하이닉스 주식회사 반도체 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768880B2 (ja) * 1993-01-19 1998-06-25 株式会社東芝 半導体記憶装置
JPH08167290A (ja) * 1994-12-15 1996-06-25 Mitsubishi Electric Corp 半導体記憶装置
JPH08273362A (ja) * 1995-03-30 1996-10-18 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US5867430A (en) * 1996-12-20 1999-02-02 Advanced Micro Devices Inc Bank architecture for a non-volatile memory enabling simultaneous reading and writing
US5847998A (en) * 1996-12-20 1998-12-08 Advanced Micro Devices, Inc. Non-volatile memory array that enables simultaneous read and write operations

Also Published As

Publication number Publication date
WO2000017884A1 (en) 2000-03-30
TW442799B (en) 2001-06-23
US5995415A (en) 1999-11-30
DE69901513T2 (de) 2003-03-20
JP2002525785A (ja) 2002-08-13
KR20010100841A (ko) 2001-11-14
EP1116239B1 (de) 2002-05-15
KR100544756B1 (ko) 2006-01-24
EP1116239A1 (de) 2001-07-18

Similar Documents

Publication Publication Date Title
DE69905595D1 (de) Speicherbankauswahlschaltung für simultanen flash-speicher mit flexibler speicherbank einteilung
DE69901513D1 (de) Simultaner flash-speicher mit flexibler speicherbankeinteilung
DE69527594D1 (de) Flashspeicherkarte
EP1016085A4 (de) Flash-speicherzellenanordnung
DE69930129D1 (de) Mram speicher mit mehreren speicherbanken
DE60109958D1 (de) Seitenlöschbarer flash-speicher
DE69526210D1 (de) Flash-speicher mit adaptiver abtastung
DE19880311T1 (de) Nichtflüchtige Speicherstruktur
DE69604929D1 (de) Flash-eeprom-speicher mit getrennter referenzmatix
DE19980545T1 (de) Verbesserte kompakte Flash-Speicherkarte und -Schnittstelle
DE69835896D1 (de) Leseverstärker für flash-speicher
DE69810096D1 (de) Nichtflüchtiger speicher
DE69937259D1 (de) Nichtflüchtiges Speicherregister
DE69923244D1 (de) Magnetoresistiven Speicheranordnungen
DE69936028D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69841394D1 (de) Speicherkarte
NO20016420L (no) Höytetthets ikke-flyktig minneanordning
DE69826955D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69614299D1 (de) Nichtflüchtige Halbleiterspeicheranordnung mit Block-Löschfunktion
DE69903576D1 (de) Adressdecoder für simultanen flash-speicher mit flexibler speicherbankeinteilung
DE69908340D1 (de) Seitenmoduslöschverfahren in flash-speichermatrize
DE69835635D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE59903868D1 (de) Magnetoresistiver speicher mit erhöhter störsicherheit
DE59913423D1 (de) Speicherzellenanordnung
DE69828021D1 (de) Halbleiterspeicheranordnung mit mehreren Banken

Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU LTD., KAWASAKI, KANAGAWA, JP

Owner name: SPANSION LLC ((N.D.GES.D. STAATES DELAWARE), SUNNY

8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SUNNYV