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DE69841124D1 - Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat - Google Patents

Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat

Info

Publication number
DE69841124D1
DE69841124D1 DE69841124T DE69841124T DE69841124D1 DE 69841124 D1 DE69841124 D1 DE 69841124D1 DE 69841124 T DE69841124 T DE 69841124T DE 69841124 T DE69841124 T DE 69841124T DE 69841124 D1 DE69841124 D1 DE 69841124D1
Authority
DE
Germany
Prior art keywords
thyristor
semiconductor
mechanical contact
semiconductor substrate
reverse leading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841124T
Other languages
English (en)
Inventor
Shinji Koga
Kazuhiro Morishita
Katsumi Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69841124D1 publication Critical patent/DE69841124D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
DE69841124T 1998-11-11 1998-11-11 Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat Expired - Lifetime DE69841124D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/005090 WO2000028600A1 (fr) 1998-11-11 1998-11-11 Thyristor passant en inverse, dispositif a semiconducteur a contact mecanique, et substrat a semiconducteur

Publications (1)

Publication Number Publication Date
DE69841124D1 true DE69841124D1 (de) 2009-10-15

Family

ID=14209380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841124T Expired - Lifetime DE69841124D1 (de) 1998-11-11 1998-11-11 Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat

Country Status (5)

Country Link
US (1) US6570193B1 (de)
EP (1) EP1049175B1 (de)
JP (1) JP3266281B2 (de)
DE (1) DE69841124D1 (de)
WO (1) WO2000028600A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103346130B (zh) * 2013-07-01 2015-11-11 株洲南车时代电气股份有限公司 Gct门极绝缘座及门极组件
WO2015078657A1 (en) * 2013-11-29 2015-06-04 Abb Technology Ag Reverse-conducting power semiconductor device
EP2966681A1 (de) * 2014-07-09 2016-01-13 GE Energy Power Conversion Technology Ltd Leistungshalbleiterbauelemente
DE102016204699B4 (de) 2015-04-13 2020-07-30 Infineon Technologies Ag Schutzvorrichtungen mit Trigger-Vorrichtungen und Verfahren zu deren Bildung
US10741548B2 (en) 2015-04-13 2020-08-11 Infineon Technologies Ag Protection devices with trigger devices and methods of formation thereof
JP7561196B2 (ja) * 2020-02-03 2024-10-03 ヒタチ・エナジー・リミテッド 逆導通パワー半導体デバイスおよびその製造方法
EP4128359B8 (de) * 2020-03-31 2023-12-20 Hitachi Energy Ltd Leistungshalbleiterbauelement mit einem thyristor and einem bipolartransistor
JP7432093B2 (ja) * 2020-03-31 2024-02-16 ヒタチ・エナジー・リミテッド ゲートランナ付きターンオフパワー半導体デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319188B2 (de) * 1972-09-02 1978-06-19
US4261001A (en) * 1980-05-23 1981-04-07 General Electric Company Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity
JPS60115263A (ja) * 1983-11-28 1985-06-21 Toshiba Corp 半導体装置
JPS61144065A (ja) * 1984-12-17 1986-07-01 Toshiba Corp 逆導通ゲ−トタ−ンオフサイリスタ
DE3521079A1 (de) 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
DE3686027D1 (de) 1985-11-29 1992-08-20 Bbc Brown Boveri & Cie Rueckwaertsleitender thyristor.
JPH04352457A (ja) * 1991-05-30 1992-12-07 Mitsubishi Electric Corp 圧接型半導体装置及びその製造方法
JPH05152564A (ja) * 1991-12-02 1993-06-18 Mitsubishi Electric Corp 逆導通ゲートターンオフサイリスタおよびその製造方法
JPH05343663A (ja) 1993-02-12 1993-12-24 Toshiba Corp ゲートターンオフサイリスタ
US5835985A (en) * 1993-09-14 1998-11-10 Kabushiki Kaisha Toshiba Reverse conducting gate-turnoff thyristor
JP3191653B2 (ja) 1996-01-17 2001-07-23 三菱電機株式会社 パワーデバイス用半導体スイッチング装置
FR2762445B1 (fr) * 1997-04-17 1999-07-16 Sgs Thomson Microelectronics Composant de protection d'interface de lignes telephoniques

Also Published As

Publication number Publication date
EP1049175A1 (de) 2000-11-02
EP1049175B1 (de) 2009-09-02
JP3266281B2 (ja) 2002-03-18
WO2000028600A1 (fr) 2000-05-18
US6570193B1 (en) 2003-05-27
EP1049175A4 (de) 2007-05-09

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Legal Events

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