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DE69827206D1 - Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben - Google Patents

Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben

Info

Publication number
DE69827206D1
DE69827206D1 DE69827206T DE69827206T DE69827206D1 DE 69827206 D1 DE69827206 D1 DE 69827206D1 DE 69827206 T DE69827206 T DE 69827206T DE 69827206 T DE69827206 T DE 69827206T DE 69827206 D1 DE69827206 D1 DE 69827206D1
Authority
DE
Germany
Prior art keywords
same
electron emission
display device
emission device
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69827206T
Other languages
English (en)
Other versions
DE69827206T2 (de
Inventor
Shingo Iwasaki
Kiyohide Ogasawara
Takamasa Yoshikawa
Takashi Chuman
Nobuyasu Negishi
Hiroshi Ito
Atsushi Yoshizawa
Takashi Yamada
Shuuichi Yanagisawa
Kazuto Sakemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Application granted granted Critical
Publication of DE69827206D1 publication Critical patent/DE69827206D1/de
Publication of DE69827206T2 publication Critical patent/DE69827206T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
DE69827206T 1997-08-08 1998-08-07 Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben Expired - Lifetime DE69827206T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21513797 1997-08-08
JP9215137A JPH1167065A (ja) 1997-08-08 1997-08-08 電子放出素子及びこれを用いた表示装置

Publications (2)

Publication Number Publication Date
DE69827206D1 true DE69827206D1 (de) 2004-12-02
DE69827206T2 DE69827206T2 (de) 2005-11-10

Family

ID=16667321

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69827206T Expired - Lifetime DE69827206T2 (de) 1997-08-08 1998-08-07 Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben

Country Status (4)

Country Link
US (1) US6066922A (de)
EP (1) EP0896353B1 (de)
JP (1) JPH1167065A (de)
DE (1) DE69827206T2 (de)

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US5982082A (en) 1997-05-06 1999-11-09 St. Clair Intellectual Property Consultants, Inc. Field emission display devices
EP0896354A1 (de) * 1997-08-08 1999-02-10 Pioneer Electronic Corporation Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben
WO1999040601A1 (fr) * 1998-02-09 1999-08-12 Matsushita Electric Industrial Co., Ltd. Dispositif emetteur d'electrons, son procede de production, et son procede d'excitation; afficheur d'images comprenant ledit emetteur d'electrons et son procede de fabrication
US6291283B1 (en) * 1998-11-09 2001-09-18 Texas Instruments Incorporated Method to form silicates as high dielectric constant materials
JP2000208508A (ja) * 1999-01-13 2000-07-28 Texas Instr Inc <Ti> 珪酸塩高誘電率材料の真空蒸着
US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
US6989631B2 (en) * 2001-06-08 2006-01-24 Sony Corporation Carbon cathode of a field emission display with in-laid isolation barrier and support
JP3874396B2 (ja) * 2000-01-13 2007-01-31 パイオニア株式会社 電子放出素子及びその製造方法並びに電子放出素子を用いた表示装置
TW509960B (en) * 2000-04-04 2002-11-11 Matsushita Electric Ind Co Ltd Highly productive method of producing plasma display panel
WO2002005305A1 (en) * 2000-07-11 2002-01-17 Ecole Polytechnique Federale De Lausanne (Epfl) Hot electron emission array for e-beam photolithography and display screens
US7002290B2 (en) * 2001-06-08 2006-02-21 Sony Corporation Carbon cathode of a field emission display with integrated isolation barrier and support on substrate
US6756730B2 (en) * 2001-06-08 2004-06-29 Sony Corporation Field emission display utilizing a cathode frame-type gate and anode with alignment method
US6682382B2 (en) * 2001-06-08 2004-01-27 Sony Corporation Method for making wires with a specific cross section for a field emission display
US7476925B2 (en) 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US6873118B2 (en) * 2002-04-16 2005-03-29 Sony Corporation Field emission cathode structure using perforated gate
US6747416B2 (en) * 2002-04-16 2004-06-08 Sony Corporation Field emission display with deflecting MEMS electrodes
US6791278B2 (en) * 2002-04-16 2004-09-14 Sony Corporation Field emission display using line cathode structure
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7012582B2 (en) * 2002-11-27 2006-03-14 Sony Corporation Spacer-less field emission display
TW594824B (en) * 2002-12-03 2004-06-21 Ind Tech Res Inst Triode structure of field-emission display and manufacturing method thereof
US20040145299A1 (en) * 2003-01-24 2004-07-29 Sony Corporation Line patterned gate structure for a field emission display
JP3907626B2 (ja) * 2003-01-28 2007-04-18 キヤノン株式会社 電子源の製造方法、画像表示装置の製造方法、電子放出素子の製造方法、画像表示装置、特性調整方法、及び画像表示装置の特性調整方法
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US20040189552A1 (en) * 2003-03-31 2004-09-30 Sony Corporation Image display device incorporating driver circuits on active substrate to reduce interconnects
US7071629B2 (en) * 2003-03-31 2006-07-04 Sony Corporation Image display device incorporating driver circuits on active substrate and other methods to reduce interconnects
KR100965543B1 (ko) * 2003-11-29 2010-06-23 삼성에스디아이 주식회사 전계 방출 표시장치 및 이의 제조 방법
JP4676428B2 (ja) * 2004-03-30 2011-04-27 パイオニア株式会社 電子放出装置及びその製造方法並びに電子放出装置を用いた撮像装置又は表示装置
US20060097625A1 (en) * 2004-11-05 2006-05-11 Taiwan Thick-Film Ind. Corp. Low voltage electron excited white lighting device
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
KR20070013873A (ko) * 2005-07-27 2007-01-31 삼성에스디아이 주식회사 전자 방출형 백라이트 유니트 및 이를 구비한 평판 표시장치
KR101104074B1 (ko) * 2008-12-18 2012-01-12 한국전자통신연구원 색 가변형 전계 방출 장치
CN104795298B (zh) 2014-01-20 2017-02-22 清华大学 电子发射装置及显示器
JP7057631B2 (ja) * 2017-06-26 2022-04-20 シャープ株式会社 電子放出素子、電子放出装置、電子放出素子の製造方法、及び、電子放出素子を備える装置
CN113838967B (zh) * 2021-08-30 2023-04-18 电子科技大学 一种合金/磁绝缘体自旋异质结及其制备方法和应用

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Publication number Priority date Publication date Assignee Title
US3445281A (en) * 1964-06-22 1969-05-20 Little Inc A Thin-film cold cathode
US4731560A (en) * 1970-08-06 1988-03-15 Owens-Illinois Television Products, Inc. Multiple gaseous discharge display/memory panel having improved operating life
US3830648A (en) * 1971-04-05 1974-08-20 Varian Associates Photoconductor-glass binder plate with insulating resin in pores
JP3126158B2 (ja) * 1991-04-10 2001-01-22 日本放送協会 薄膜冷陰極
JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
JP3633154B2 (ja) * 1996-03-22 2005-03-30 株式会社日立製作所 薄膜型電子源および薄膜型電子源応用機器
JP3281533B2 (ja) * 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子
JPH10308165A (ja) * 1997-03-04 1998-11-17 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JP3547588B2 (ja) * 1997-03-10 2004-07-28 パイオニア株式会社 電子放出素子及びこれを用いた表示装置
US5990605A (en) * 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
US5949185A (en) * 1997-10-22 1999-09-07 St. Clair Intellectual Property Consultants, Inc. Field emission display devices
US5945777A (en) * 1998-04-30 1999-08-31 St. Clair Intellectual Property Consultants, Inc. Surface conduction emitters for use in field emission display devices

Also Published As

Publication number Publication date
JPH1167065A (ja) 1999-03-09
EP0896353B1 (de) 2004-10-27
DE69827206T2 (de) 2005-11-10
EP0896353A1 (de) 1999-02-10
US6066922A (en) 2000-05-23

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition