[go: up one dir, main page]

DE69815422D1 - Verfahren zum Herstellen eines Supraleiter vom Typ selten Erde-Barium-Kupraten - Google Patents

Verfahren zum Herstellen eines Supraleiter vom Typ selten Erde-Barium-Kupraten

Info

Publication number
DE69815422D1
DE69815422D1 DE69815422T DE69815422T DE69815422D1 DE 69815422 D1 DE69815422 D1 DE 69815422D1 DE 69815422 T DE69815422 T DE 69815422T DE 69815422 T DE69815422 T DE 69815422T DE 69815422 D1 DE69815422 D1 DE 69815422D1
Authority
DE
Germany
Prior art keywords
rare earth
barium
cuprate
melting point
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69815422T
Other languages
English (en)
Other versions
DE69815422T2 (de
Inventor
Jens Christiansen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topsoe AS
Original Assignee
Haldor Topsoe AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Haldor Topsoe AS filed Critical Haldor Topsoe AS
Application granted granted Critical
Publication of DE69815422D1 publication Critical patent/DE69815422D1/de
Publication of DE69815422T2 publication Critical patent/DE69815422T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0801—Manufacture or treatment of filaments or composite wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE69815422T 1997-03-21 1998-03-06 Verfahren zum Herstellen eines Supraleiter vom Typ selten Erde-Barium-Kupraten Expired - Fee Related DE69815422T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4233297P 1997-03-21 1997-03-21

Publications (2)

Publication Number Publication Date
DE69815422D1 true DE69815422D1 (de) 2003-07-17
DE69815422T2 DE69815422T2 (de) 2003-12-24

Family

ID=21921296

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69815422T Expired - Fee Related DE69815422T2 (de) 1997-03-21 1998-03-06 Verfahren zum Herstellen eines Supraleiter vom Typ selten Erde-Barium-Kupraten

Country Status (7)

Country Link
US (1) US6243598B1 (de)
EP (1) EP0866508B1 (de)
JP (1) JPH1112094A (de)
CN (1) CN1202705A (de)
AT (1) ATE242917T1 (de)
DE (1) DE69815422T2 (de)
DK (1) DK0866508T3 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10128320C1 (de) * 2001-06-12 2002-07-25 Trithor Gmbh Verfahren zum Herstellen von Hochtemperatur-Supraleitern
DE10249550A1 (de) 2002-10-23 2004-05-06 Nexans Superconductors Gmbh Supraleitender Kabelleiter mit SEBCO-beschichteten Leiterelementen
US7286032B2 (en) 2003-07-10 2007-10-23 Superpower, Inc. Rare-earth-Ba-Cu-O superconductors and methods of making same
US20100210468A1 (en) * 2008-08-04 2010-08-19 Haigun Lee Method for joining second-generation high-temperature superconducting wires by melting diffusion
CN116535248B (zh) * 2023-05-23 2024-07-19 广东天弼陶瓷有限公司 一种具有金属光泽且立体感强的抛釉洞石砖及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3855912T2 (de) 1987-03-13 1997-10-09 Toshiba Kawasaki Kk Supraleitender Draht und Verfahren zu seiner Herstellung
JP2707499B2 (ja) 1987-11-26 1998-01-28 住友電気工業株式会社 酸化物超電導体の製造方法
US4990493A (en) * 1988-09-06 1991-02-05 General Electric Company Process of making an oriented polycrystal superconductor
JP2871258B2 (ja) * 1991-01-18 1999-03-17 日本碍子株式会社 酸化物超電導体及びその製造方法
DE69314077T2 (de) * 1992-03-27 1998-03-26 Hokuriku Electric Power Co Herstellung von Oxid-Supraleitern mit grosser magnetischer Schwebekraft
US5340797A (en) * 1993-01-29 1994-08-23 Illinois Superconductor Corporation Superconducting 123YBaCu-oxide produced at low temperatures
JPH06321695A (ja) * 1993-05-10 1994-11-22 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Ｙ１２３型結晶構造を有する酸化物結晶膜及び膜積層体
US5434129A (en) 1993-09-23 1995-07-18 Advanced Superconductors, Inc. Method for manufacturing high tc superconductor coils
US5591698A (en) * 1994-12-29 1997-01-07 University Of Hawaii Low temperature (T lower than 950° C.) preparation of melt texture YBCO superconductors
WO1996021934A1 (en) * 1995-01-12 1996-07-18 The University Of Chicago Large single domain 123 material produced by seeding with single crystal rare earth barium copper oxide single crystals
US5872081A (en) * 1995-04-07 1999-02-16 General Atomics Compositions for melt processing high temperature superconductor
US5866515A (en) * 1995-07-19 1999-02-02 Basf Corporation Superconductor composite
EP0756336A1 (de) 1995-07-28 1997-01-29 American Superconductor Corporation Kryogene Verformung einer supraleitenden Hochtemperatur-Verbundstruktur
US5856277A (en) * 1996-06-03 1999-01-05 Illinois Superconductor Corporation Surface texturing of superconductors by controlled oxygen pressure

Also Published As

Publication number Publication date
EP0866508A1 (de) 1998-09-23
CN1202705A (zh) 1998-12-23
US6243598B1 (en) 2001-06-05
EP0866508B1 (de) 2003-06-11
JPH1112094A (ja) 1999-01-19
DE69815422T2 (de) 2003-12-24
ATE242917T1 (de) 2003-06-15
DK0866508T3 (da) 2003-10-06

Similar Documents

Publication Publication Date Title
TW350143B (en) Method for producing semiconductor device
JPS5575282A (en) Manufacturing method of semiconductor laser device
WO2002011196A1 (fr) Procede de fabrication de plaquette au silicium monocristallin
JPS54155770A (en) Manufacture of semiconductor device
DE69815422D1 (de) Verfahren zum Herstellen eines Supraleiter vom Typ selten Erde-Barium-Kupraten
JPS57140824A (en) Heat treatment of thin strip of amorphous magnetic alloy for magnetostrictive delay wire
JPS5593230A (en) Soldering method for semiconductor device
EP0938130A3 (de) Verfahren zur Herstellung von einem Bauelement mit flachen Übergängen
JPS5361577A (en) Growing method for horizontally pulled ribbon crystal
JPS5533079A (en) Thin film and method of fabricating the same
JPS52106673A (en) Crystal growing method and device thereof
JPS5419624A (en) Adhering method of adhesive tape
JPS547861A (en) Liquid phase epitaxial growth method
JPS54153569A (en) Heat treatment method for semiconductor wafer
JPS5550619A (en) Manufacturing single crystal
RU96113653A (ru) Способ получения (выращивания) полупроводниковых кристаллов из расплава на основе соединений а4в6 (разлагающихся соединений)
JPS5410667A (en) Semiconductor device
JPS57123898A (en) Preparation of semi-insulating gaas single crystal
JPS534779A (en) Gas phase growth method of compound semiconductor
Micheli et al. Laser microfabrication of thin films: Part one
Yakimov et al. Electret State in Dislocation p--n-Junctions
JPS5337184A (en) Epitaxially growing method in liquid phase
JPS5533080A (en) Method of adhering semiconductor substrate
JPS5626444A (en) Manufacture of semiconductor device
JPS57129896A (en) Liquid phase epitaxial growing apparatus

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee