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DE69814619D1 - SILICON CARBIDE FIELD CONTROLLED BIPOLAR SWITCH - Google Patents

SILICON CARBIDE FIELD CONTROLLED BIPOLAR SWITCH

Info

Publication number
DE69814619D1
DE69814619D1 DE69814619T DE69814619T DE69814619D1 DE 69814619 D1 DE69814619 D1 DE 69814619D1 DE 69814619 T DE69814619 T DE 69814619T DE 69814619 T DE69814619 T DE 69814619T DE 69814619 D1 DE69814619 D1 DE 69814619D1
Authority
DE
Germany
Prior art keywords
epitaxial layer
silicon carbide
conductivity type
type silicon
field controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69814619T
Other languages
German (de)
Other versions
DE69814619T2 (en
Inventor
Ranbir Singh
John W Palmour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE69814619D1 publication Critical patent/DE69814619D1/en
Application granted granted Critical
Publication of DE69814619T2 publication Critical patent/DE69814619T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Push-Button Switches (AREA)
  • Keying Circuit Devices (AREA)
  • Contacts (AREA)

Abstract

A field controlled bipolar switch having a bulk single crystal silicon carbide substrate of a first conductivity type having an upper surface and a lower surface. A first epitaxial layer of a second conductivity type silicon carbide is formed upon the upper surface of the substrate. A second epitaxial layer of the second conductivity type silicon carbide is formed on the first epitaxial layer of silicon carbide. A plurality of regions of a third conductivity type silicon carbide are formed in the second epitaxial layer to form a gate grid in the second epitaxial layer. A third epitaxial layer of the second conductivity type silicon carbide is formed on the second epitaxial layer and a fourth epitaxial layer of the second conductivity type silicon carbide is formed upon the third epitaxial layer. The fourth epitaxial layer has a higher carrier concentration than is present in the first, second and third epitaxial layers. A first ohmic contact is formed upon the fourth epitaxial layer and a second ohmic contact is formed on the lower surface of the substrate. An ohmic gate contact is connected to the gate grid for pinching off the flow of current between the first ohmic contact and the second ohmic contact when a bias is applied to the ohmic gate contact.
DE69814619T 1997-04-30 1998-03-20 SILICON CARBIDE FIELD CONTROLLED BIPOLAR SWITCH Expired - Lifetime DE69814619T2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/846,286 US6011279A (en) 1997-04-30 1997-04-30 Silicon carbide field controlled bipolar switch
US846286 1997-04-30
PCT/US1998/005487 WO1998049731A1 (en) 1997-04-30 1998-03-20 Silicon carbide field conrolled bipolar switch

Publications (2)

Publication Number Publication Date
DE69814619D1 true DE69814619D1 (en) 2003-06-18
DE69814619T2 DE69814619T2 (en) 2004-03-18

Family

ID=25297449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69814619T Expired - Lifetime DE69814619T2 (en) 1997-04-30 1998-03-20 SILICON CARBIDE FIELD CONTROLLED BIPOLAR SWITCH

Country Status (10)

Country Link
US (1) US6011279A (en)
EP (1) EP0979531B1 (en)
JP (1) JP4680330B2 (en)
KR (1) KR100514398B1 (en)
CN (1) CN1166001C (en)
AT (1) ATE240588T1 (en)
AU (1) AU6572898A (en)
CA (1) CA2285067C (en)
DE (1) DE69814619T2 (en)
WO (1) WO1998049731A1 (en)

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AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
DE19833214C1 (en) * 1998-07-23 1999-08-12 Siemens Ag Vertical J-FET semiconductor device
US6803243B2 (en) 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
EP1168539B1 (en) 1999-03-04 2009-12-16 Nichia Corporation Nitride semiconductor laser device
SE9901410D0 (en) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
US6909119B2 (en) * 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6514779B1 (en) * 2001-10-17 2003-02-04 Cree, Inc. Large area silicon carbide devices and manufacturing methods therefor
US6734462B1 (en) 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
CA2381128A1 (en) * 2002-04-09 2003-10-09 Quantiscript Inc. Plasma polymerized electron beam resist
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
CN100533663C (en) * 2004-03-18 2009-08-26 克里公司 Photolithographic method for reducing stacking fault nucleation sites and structures with reduced stacking fault sites
DE102004047313B3 (en) * 2004-09-29 2006-03-30 Siced Electronics Development Gmbh & Co. Kg Semiconductor arrangement with a tunnel contact and method for its production
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
JP2011199306A (en) * 2011-06-03 2011-10-06 Sumitomo Electric Ind Ltd Semiconductor device and method of manufacturing the same
CN104201211B (en) * 2014-08-27 2016-03-30 温州大学 Fabrication and process of SiC ultrafast recovery diode
SE541290C2 (en) * 2017-09-15 2019-06-11 Ascatron Ab A method for manufacturing a grid
CN113097298B (en) * 2021-03-30 2024-09-17 全球能源互联网研究院有限公司 Insulated gate bipolar transistor and preparation method thereof

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US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
US4569118A (en) * 1977-12-23 1986-02-11 General Electric Company Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
US4994883A (en) * 1989-10-02 1991-02-19 General Electric Company Field controlled diode (FCD) having MOS trench gates
US5202750A (en) * 1990-04-09 1993-04-13 U.S. Philips Corp. MOS-gated thyristor
WO1993013560A1 (en) * 1991-12-23 1993-07-08 Forschungszentrum Jülich GmbH Electronic component and process for making it
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
US5554561A (en) * 1993-04-30 1996-09-10 Texas Instruments Incorporated Epitaxial overgrowth method
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
AU4942993A (en) * 1993-09-08 1995-03-27 Siemens Aktiengesellschaft Current limiting device
DE9411601U1 (en) * 1993-09-08 1994-10-13 Siemens AG, 80333 München Current limiting switch
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US5387805A (en) * 1994-01-05 1995-02-07 Metzler; Richard A. Field controlled thyristor
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
WO1995034915A1 (en) * 1994-06-13 1995-12-21 Abb Research Ltd. Semiconductor device in silicon carbide
JP3277075B2 (en) * 1994-09-07 2002-04-22 日本碍子株式会社 Semiconductor device and manufacturing method thereof
SE9601176D0 (en) * 1996-03-27 1996-03-27 Abb Research Ltd A method of producing a semiconductor device having semiconductor layers of SiC using the implanting step and a device produced thereby
DE19644821C1 (en) * 1996-10-29 1998-02-12 Daimler Benz Ag Controllable semiconductor structure for use instead of JFET, MESFET

Also Published As

Publication number Publication date
WO1998049731A1 (en) 1998-11-05
AU6572898A (en) 1998-11-24
EP0979531A1 (en) 2000-02-16
KR20010006559A (en) 2001-01-26
EP0979531B1 (en) 2003-05-14
CA2285067A1 (en) 1998-11-05
US6011279A (en) 2000-01-04
ATE240588T1 (en) 2003-05-15
CN1254442A (en) 2000-05-24
CN1166001C (en) 2004-09-08
DE69814619T2 (en) 2004-03-18
JP2001522533A (en) 2001-11-13
JP4680330B2 (en) 2011-05-11
CA2285067C (en) 2006-05-02
KR100514398B1 (en) 2005-09-13

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