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DE69801069D1 - Vorrichtung zur Kristallhaltung - Google Patents

Vorrichtung zur Kristallhaltung

Info

Publication number
DE69801069D1
DE69801069D1 DE69801069T DE69801069T DE69801069D1 DE 69801069 D1 DE69801069 D1 DE 69801069D1 DE 69801069 T DE69801069 T DE 69801069T DE 69801069 T DE69801069 T DE 69801069T DE 69801069 D1 DE69801069 D1 DE 69801069D1
Authority
DE
Germany
Prior art keywords
holding device
crystal holding
crystal
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69801069T
Other languages
English (en)
Other versions
DE69801069T2 (de
Inventor
Makoto Iida
Eiichi Iino
Masanori Kimura
Shozo Muraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69801069D1 publication Critical patent/DE69801069D1/de
Publication of DE69801069T2 publication Critical patent/DE69801069T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1072Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69801069T 1997-03-17 1998-03-11 Vorrichtung zur Kristallhaltung Expired - Lifetime DE69801069T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8332297A JP3596226B2 (ja) 1997-03-17 1997-03-17 単結晶保持装置

Publications (2)

Publication Number Publication Date
DE69801069D1 true DE69801069D1 (de) 2001-08-16
DE69801069T2 DE69801069T2 (de) 2002-03-14

Family

ID=13799201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801069T Expired - Lifetime DE69801069T2 (de) 1997-03-17 1998-03-11 Vorrichtung zur Kristallhaltung

Country Status (6)

Country Link
US (1) US6053975A (de)
EP (1) EP0866151B1 (de)
JP (1) JP3596226B2 (de)
KR (1) KR100502987B1 (de)
DE (1) DE69801069T2 (de)
TW (1) TW391994B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079891A (ko) * 1997-03-27 1998-11-25 모리 레이자로 단결정 성장장치 및 단결정 성장방법
JPH10273390A (ja) * 1997-03-28 1998-10-13 Super Silicon Kenkyusho:Kk 半導体単結晶製造装置
JP3376877B2 (ja) * 1997-09-02 2003-02-10 信越半導体株式会社 種結晶保持具
KR100571693B1 (ko) * 1998-09-09 2006-04-17 가부시키가이샤 스파 시리콘 겐큐쇼 단결정 성장 장치
JP4052753B2 (ja) * 1999-02-24 2008-02-27 株式会社スーパーシリコン研究所 単結晶成長装置及び単結晶成長方法
DE19939715B4 (de) * 1999-08-21 2008-07-24 Crystal Growing Systems Gmbh Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer
JP4689027B2 (ja) * 2000-10-23 2011-05-25 株式会社Sumco 半導体単結晶引上装置
US7102099B2 (en) * 2002-07-23 2006-09-05 Illinois Tool Works Inc. Method and apparatus for feeding wire to a welding arc
JP4362760B2 (ja) * 2003-10-14 2009-11-11 Sumco Techxiv株式会社 半導体単結晶製造装置
JP5765642B2 (ja) 2011-04-06 2015-08-19 株式会社Sumco 単結晶引上げ装置の結晶保持機構および単結晶インゴット製造方法
KR101434196B1 (ko) * 2011-12-13 2014-08-28 (주) 다애테크 사파이어 잉곳 제조장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
JPS62288191A (ja) * 1986-06-06 1987-12-15 Kyushu Denshi Kinzoku Kk 単結晶成長方法及びその装置
US5196086A (en) * 1987-04-09 1993-03-23 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
JPS63252991A (ja) * 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するcz単結晶
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
JPH07103000B2 (ja) * 1990-03-30 1995-11-08 信越半導体株式会社 結晶引上装置
JPH07515B2 (ja) * 1990-04-11 1995-01-11 信越半導体株式会社 結晶引上装置
JPH078495B2 (ja) * 1990-11-29 1995-02-01 信越半導体株式会社 単結晶引上装置の単結晶絞り部自動切断装置
GB9412629D0 (en) * 1994-06-23 1994-08-10 Secr Defence Improvements in crystal growth
JP3402012B2 (ja) * 1995-04-21 2003-04-28 信越半導体株式会社 単結晶の成長方法及び装置
JP3402040B2 (ja) * 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置
JP3438492B2 (ja) * 1996-10-18 2003-08-18 信越半導体株式会社 単結晶の引上げ方法

Also Published As

Publication number Publication date
JP3596226B2 (ja) 2004-12-02
US6053975A (en) 2000-04-25
TW391994B (en) 2000-06-01
KR19980080369A (ko) 1998-11-25
DE69801069T2 (de) 2002-03-14
EP0866151B1 (de) 2001-07-11
JPH10259088A (ja) 1998-09-29
EP0866151A1 (de) 1998-09-23
KR100502987B1 (ko) 2005-11-16

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