DE69801011D1 - Verfahren und Vorrichtung zum Herstellen eines Gasgemisches enthaltend ein Trägergas, eine oxidierendes Gas und ein Silan - Google Patents

Verfahren und Vorrichtung zum Herstellen eines Gasgemisches enthaltend ein Trägergas, eine oxidierendes Gas und ein Silan

Info

Publication number: DE69801011D1
Authority: DE; Germany
Prior art keywords: gas; silane; carrier gas; producing; mixture containing
Prior art date: 1997-01-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69801011T

Other languages

English (en)

Other versions

DE69801011T2 (de

Inventor

Alain Villermet

Francois Coeuret

Panayotis Cocolios

Michel Inizan

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Air Liquide SA

LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude

Original Assignee

Air Liquide SA

LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-01-15

Filing date

1998-01-09

Publication date

2001-08-09

1998-01-09 Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA

2001-08-09 Publication of DE69801011D1 publication Critical patent/DE69801011D1/de

2002-03-21 Application granted granted Critical

2002-03-21 Publication of DE69801011T2 publication Critical patent/DE69801011T2/de

2018-01-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Silicon Compounds (AREA)
Treating Waste Gases (AREA)
Catalysts (AREA)
Ceramic Products (AREA)
Coating Apparatus (AREA)
Gas-Filled Discharge Tubes (AREA)
Formation Of Insulating Films (AREA)

DE69801011T 1997-01-15 1998-01-09 Verfahren und Vorrichtung zum Herstellen eines Gasgemisches enthaltend ein Trägergas, eine oxidierendes Gas und ein Silan Expired - Fee Related DE69801011T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR9700344A FR2758318B1 (fr)	1997-01-15	1997-01-15	Procede et installation d'elaboration d'un melange gazeux comportant un gaz porteur, un gaz oxydant et un silane

Publications (2)

Publication Number	Publication Date
DE69801011D1 true DE69801011D1 (de)	2001-08-09
DE69801011T2 DE69801011T2 (de)	2002-03-21

Family

ID=9502611

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69801011T Expired - Fee Related DE69801011T2 (de)	1997-01-15	1998-01-09	Verfahren und Vorrichtung zum Herstellen eines Gasgemisches enthaltend ein Trägergas, eine oxidierendes Gas und ein Silan

Country Status (12)

Country	Link
US (2)	US6177134B1 (de)
EP (1)	EP0854204B1 (de)
JP (1)	JPH11543A (de)
KR (1)	KR19980070497A (de)
AT (1)	ATE202806T1 (de)
AU (1)	AU741149B2 (de)
CA (1)	CA2227529A1 (de)
DE (1)	DE69801011T2 (de)
DK (1)	DK0854204T3 (de)
ES (1)	ES2161018T3 (de)
FR (1)	FR2758318B1 (de)
TW (1)	TW495380B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2804044B1 (fr) *	2000-01-25	2002-03-29	Air Liquide	Procede et dispositif pour l'optimisation de melanges de gaz reactifs
US7054741B2 (en) *	2002-02-11	2006-05-30	Landnet Corporation	Land software tool
JP2008521596A (ja) *	2004-11-30	2008-06-26	ファイアテクノロジーズ、インコーポレイテッド	接触装置および接触方法ならびにそれらの使用
CN100422628C (zh) *	2006-07-28	2008-10-01	周玉成	一种标准气体的动态配制系统
CN110841565A (zh) *	2019-11-08	2020-02-28	协鑫高科纳米新材料(徐州)有限公司	一种用于制备气相二氧化硅的反应罐
CN112827320B (zh) *	2020-12-23	2022-09-09	四川天采科技有限责任公司	一种氯基SiC-CVD制程尾气为反应循环气的FTrPSA可调节分离方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3808035A (en) *	1970-12-09	1974-04-30	M Stelter	Deposition of single or multiple layers on substrates from dilute gas sweep to produce optical components, electro-optical components, and the like
US4002512A (en) *	1974-09-16	1977-01-11	Western Electric Company, Inc.	Method of forming silicon dioxide
US4045594A (en) *	1975-12-31	1977-08-30	Ibm Corporation	Planar insulation of conductive patterns by chemical vapor deposition and sputtering
US4239811A (en) *	1979-08-16	1980-12-16	International Business Machines Corporation	Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction
JPH0627329B2 (ja) *	1984-02-13	1994-04-13	シュミット，ジェロウム・ジェイ・ザ・サ−ド	導電および誘電性固体薄膜のガスジェット付着方法および装置とそれによって製造される生産物
US4992306A (en) *	1990-02-01	1991-02-12	Air Products Abd Chemicals, Inc.	Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources
JP2626925B2 (ja) *	1990-05-23	1997-07-02	三菱電機株式会社	基板処理装置および基板処理方法
US5040046A (en) *	1990-10-09	1991-08-13	Micron Technology, Inc.	Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
FR2704558B1 (fr) *	1993-04-29	1995-06-23	Air Liquide	Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.
US5728224A (en) *	1995-09-13	1998-03-17	Tetra Laval Holdings & Finance S.A.	Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate

1997
- 1997-01-15 FR FR9700344A patent/FR2758318B1/fr not_active Expired - Fee Related
1998
- 1998-01-09 ES ES98400035T patent/ES2161018T3/es not_active Expired - Lifetime
- 1998-01-09 DE DE69801011T patent/DE69801011T2/de not_active Expired - Fee Related
- 1998-01-09 TW TW087100218A patent/TW495380B/zh active
- 1998-01-09 AT AT98400035T patent/ATE202806T1/de not_active IP Right Cessation
- 1998-01-09 EP EP98400035A patent/EP0854204B1/de not_active Expired - Lifetime
- 1998-01-09 DK DK98400035T patent/DK0854204T3/da active
- 1998-01-12 AU AU51082/98A patent/AU741149B2/en not_active Ceased
- 1998-01-14 CA CA002227529A patent/CA2227529A1/fr not_active Abandoned
- 1998-01-14 JP JP10005977A patent/JPH11543A/ja active Pending
- 1998-01-14 KR KR1019980000789A patent/KR19980070497A/ko not_active Application Discontinuation
- 1998-01-15 US US09/007,333 patent/US6177134B1/en not_active Expired - Fee Related
2000
- 2000-11-29 US US09/725,183 patent/US20010000030A1/en not_active Abandoned

Also Published As

Publication number	Publication date
US20010000030A1 (en)	2001-03-15
FR2758318A1 (fr)	1998-07-17
CA2227529A1 (fr)	1998-07-15
KR19980070497A (ko)	1998-10-26
JPH11543A (ja)	1999-01-06
EP0854204A1 (de)	1998-07-22
EP0854204B1 (de)	2001-07-04
AU741149B2 (en)	2001-11-22
AU5108298A (en)	1998-07-23
ATE202806T1 (de)	2001-07-15
US6177134B1 (en)	2001-01-23
TW495380B (en)	2002-07-21
DK0854204T3 (da)	2001-09-24
FR2758318B1 (fr)	1999-02-05
ES2161018T3 (es)	2001-11-16
DE69801011T2 (de)	2002-03-21

Publication	Publication Date	Title
BR9205866A (pt)	1994-08-02	Processo de desnitrificação
ATE257408T1 (de)	2004-01-15	Verfahren zur regenerierung eines zeolith- katalysators
ES8607181A1 (es)	1986-05-16	Procedimiento para separar selectivamente el hidrogeno sul- furado de mezclas gaseosas que contengan tambien anhidrido carbonico
ATE13509T1 (de)	1985-06-15	Verfahren und vorrichtung zur pyrogenen herstellung von siliciumdioxid.
SE8504439D0 (sv)	1985-09-25	Sett att framstella en ren, koloxid och vetgas innehallande gas
ATE202806T1 (de)	2001-07-15	Verfahren und vorrichtung zum herstellen eines gasgemisches enthaltend ein trägergas, eine oxidierendes gas und ein silan
GB8824943D0 (en)	1988-11-30	Removing hydrogen sulphide from gas mixture
ATE29678T1 (de)	1987-10-15	Verfahren und einrichtung zum herstellen von loesungen mit einem hohen prozentgehalt an geloestem gas; derart erhaltene loesungen.
DE59813477D1 (de)	2006-05-18	Verfahren und vorrichtung zur biogasgewinnung
SE8505462D0 (sv)	1985-11-19	Forfarande for selektivt borttagande av vetesulfid fran gasblandningen, som even innehaller koldioxid
JPS56130209A (en)	1981-10-13	Malodor removing method
DE69922028D1 (de)	2004-12-23	Verfahren zur herstellung von expandierbaren poly(vinylaren)teilchen
JPS5439314A (en)	1979-03-26	Method of manufacturing highly pure silicon iron
JPS57125661A (en)	1982-08-05	Deodorizing method of lime as food additive
JPS5368699A (en)	1978-06-19	Production of uranium mononitride
DE3772793D1 (de)	1991-10-17	Verfahren zur herstellung von lithiumaluminat-pulver in der gamma-form.
PL347163A1 (en)	2002-03-25	Method for removing nitrogen oxides from nitrosyl sulphuric acid
JPS55134629A (en)	1980-10-20	Selective permeable membrane for separating gas
JPS5221275A (en)	1977-02-17	Removing method of hydrogen sulfide from gas at high temperature
JPS5224982A (en)	1977-02-24	Exhaust gas desulfurization process
JPS562825A (en)	1981-01-13	Gas purification and waste water treatment
JPS54150372A (en)	1979-11-26	Separating method for h2s and co2 from gas mixture selectively
JPS5258093A (en)	1977-05-13	Method for separation of oxygen or nitrogen
DE59010739D1 (de)	1997-08-28	Verfahren zur Entgasung von Anlagen
JPS5377340A (en)	1978-07-08	Heating method for exhaust gas involving non-burning gas and remaining oxyg en

Legal Events

Date	Code	Title	Description
2002-08-08	8364	No opposition during term of opposition
2003-11-13	8339	Ceased/non-payment of the annual fee