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DE69740027D1 - Gittergesteuerte elektronenemissionsvorrichtung und herstellungsverfahren dafür - Google Patents

Gittergesteuerte elektronenemissionsvorrichtung und herstellungsverfahren dafür

Info

Publication number
DE69740027D1
DE69740027D1 DE69740027T DE69740027T DE69740027D1 DE 69740027 D1 DE69740027 D1 DE 69740027D1 DE 69740027 T DE69740027 T DE 69740027T DE 69740027 T DE69740027 T DE 69740027T DE 69740027 D1 DE69740027 D1 DE 69740027D1
Authority
DE
Germany
Prior art keywords
emissioning
grid
manufacturing
method therefor
controlled electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69740027T
Other languages
English (en)
Inventor
Duane A Haven
Paul N Ludwig
Christopher J Spindt
Daniel M Dobkin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69740027D1 publication Critical patent/DE69740027D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
DE69740027T 1996-06-07 1997-06-05 Gittergesteuerte elektronenemissionsvorrichtung und herstellungsverfahren dafür Expired - Lifetime DE69740027D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/660,537 US5865657A (en) 1996-06-07 1996-06-07 Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
PCT/US1997/009196 WO1997047020A1 (en) 1996-06-07 1997-06-05 Gated electron emission device and method of fabrication thereof

Publications (1)

Publication Number Publication Date
DE69740027D1 true DE69740027D1 (de) 2010-12-02

Family

ID=24649927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69740027T Expired - Lifetime DE69740027D1 (de) 1996-06-07 1997-06-05 Gittergesteuerte elektronenemissionsvorrichtung und herstellungsverfahren dafür

Country Status (7)

Country Link
US (1) US5865657A (de)
EP (1) EP1018131B1 (de)
JP (1) JP3736857B2 (de)
KR (1) KR100357812B1 (de)
DE (1) DE69740027D1 (de)
TW (1) TW398005B (de)
WO (1) WO1997047020A1 (de)

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US5865659A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
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US6039621A (en) 1997-07-07 2000-03-21 Candescent Technologies Corporation Gate electrode formation method
US6339385B1 (en) 1997-08-20 2002-01-15 Micron Technology, Inc. Electronic communication devices, methods of forming electrical communication devices, and communication methods
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EP1073090A3 (de) * 1999-07-27 2003-04-16 Iljin Nanotech Co., Ltd. Feldemissionsanzeigevorrichtung mit Kohlenstoffnanoröhren und Verfahren
JP2001043790A (ja) * 1999-07-29 2001-02-16 Sony Corp 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
US6400068B1 (en) * 2000-01-18 2002-06-04 Motorola, Inc. Field emission device having an emitter-enhancing electrode
US6364730B1 (en) * 2000-01-18 2002-04-02 Motorola, Inc. Method for fabricating a field emission device and method for the operation thereof
RU2194329C2 (ru) 2000-02-25 2002-12-10 ООО "Высокие технологии" Способ получения адресуемого автоэмиссионного катода и дисплейной структуры на его основе
US6884093B2 (en) * 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
US6935913B2 (en) * 2000-10-27 2005-08-30 Science Applications International Corporation Method for on-line testing of a light emitting panel
US7288014B1 (en) 2000-10-27 2007-10-30 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6801001B2 (en) * 2000-10-27 2004-10-05 Science Applications International Corporation Method and apparatus for addressing micro-components in a plasma display panel
US6822626B2 (en) * 2000-10-27 2004-11-23 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6762566B1 (en) 2000-10-27 2004-07-13 Science Applications International Corporation Micro-component for use in a light-emitting panel
US6545422B1 (en) 2000-10-27 2003-04-08 Science Applications International Corporation Socket for use with a micro-component in a light-emitting panel
US6612889B1 (en) 2000-10-27 2003-09-02 Science Applications International Corporation Method for making a light-emitting panel
US6620012B1 (en) * 2000-10-27 2003-09-16 Science Applications International Corporation Method for testing a light-emitting panel and the components therein
US6570335B1 (en) * 2000-10-27 2003-05-27 Science Applications International Corporation Method and system for energizing a micro-component in a light-emitting panel
US6764367B2 (en) 2000-10-27 2004-07-20 Science Applications International Corporation Liquid manufacturing processes for panel layer fabrication
US6796867B2 (en) * 2000-10-27 2004-09-28 Science Applications International Corporation Use of printing and other technology for micro-component placement
US7351607B2 (en) * 2003-12-11 2008-04-01 Georgia Tech Research Corporation Large scale patterned growth of aligned one-dimensional nanostructures
US20050189164A1 (en) * 2004-02-26 2005-09-01 Chang Chi L. Speaker enclosure having outer flared tube
GB0516783D0 (en) * 2005-08-16 2005-09-21 Univ Surrey Micro-electrode device for dielectrophoretic characterisation of particles
KR100831843B1 (ko) * 2006-11-07 2008-05-22 주식회사 실트론 금속층 위에 성장된 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자
TWI441237B (zh) * 2012-05-31 2014-06-11 Au Optronics Corp 場發射顯示器之畫素結構的製造方法
US10026822B2 (en) 2014-11-14 2018-07-17 Elwha Llc Fabrication of nanoscale vacuum grid and electrode structure with high aspect ratio dielectric spacers between the grid and electrode
US9548180B2 (en) * 2014-11-21 2017-01-17 Elwha Llc Nanoparticle-templated lithographic patterning of nanoscale electronic components
FR3044826B1 (fr) * 2015-12-02 2018-04-20 Commissariat Energie Atomique Agencement pour empilement de cellule photovoltaique en couches minces et procede de fabrication associe

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US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
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US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
JP3007654B2 (ja) * 1990-05-31 2000-02-07 株式会社リコー 電子放出素子の製造方法
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
US5150192A (en) * 1990-09-27 1992-09-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array
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JP2550798B2 (ja) * 1991-04-12 1996-11-06 富士通株式会社 微小冷陰極の製造方法
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
US5278472A (en) * 1992-02-05 1994-01-11 Motorola, Inc. Electronic device employing field emission devices with dis-similar electron emission characteristics and method for realization
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KR950008756B1 (ko) * 1992-11-25 1995-08-04 삼성전관주식회사 실리콘 전자방출소자 및 그의 제조방법
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
KR0150252B1 (ko) * 1993-07-13 1998-10-01 모리시다 요이치 반도체 기억장치의 제조방법
US5378182A (en) * 1993-07-22 1995-01-03 Industrial Technology Research Institute Self-aligned process for gated field emitters
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
EP0700065B1 (de) * 1994-08-31 2001-09-19 AT&T Corp. Feldemissionsvorrichtung und Verfahren zur Herstellung
JP3304645B2 (ja) * 1994-09-22 2002-07-22 ソニー株式会社 電界放出型装置の製造方法
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5676853A (en) * 1996-05-21 1997-10-14 Micron Display Technology, Inc. Mask for forming features on a semiconductor substrate and a method for forming the mask

Also Published As

Publication number Publication date
KR20000016557A (ko) 2000-03-25
KR100357812B1 (ko) 2002-12-18
EP1018131A4 (de) 2000-07-19
TW398005B (en) 2000-07-11
JP3736857B2 (ja) 2006-01-18
JP2001506395A (ja) 2001-05-15
US5865657A (en) 1999-02-02
EP1018131B1 (de) 2010-10-20
EP1018131A1 (de) 2000-07-12
WO1997047020A1 (en) 1997-12-11

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