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DE69739711D1 - Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung - Google Patents

Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung

Info

Publication number
DE69739711D1
DE69739711D1 DE69739711T DE69739711T DE69739711D1 DE 69739711 D1 DE69739711 D1 DE 69739711D1 DE 69739711 T DE69739711 T DE 69739711T DE 69739711 T DE69739711 T DE 69739711T DE 69739711 D1 DE69739711 D1 DE 69739711D1
Authority
DE
Germany
Prior art keywords
manufacturing
electronic device
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739711T
Other languages
English (en)
Inventor
Shunsuke Kugo
Hideo Nikoh
Tomoyuki Sasaki
Hideo Ichimura
Daihei Kajiwara
Shoji Matsumoto
Satoshi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE69739711D1 publication Critical patent/DE69739711D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE69739711T 1996-10-02 1997-10-02 Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung Expired - Lifetime DE69739711D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26211996 1996-10-02

Publications (1)

Publication Number Publication Date
DE69739711D1 true DE69739711D1 (de) 2010-02-04

Family

ID=17371321

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739711T Expired - Lifetime DE69739711D1 (de) 1996-10-02 1997-10-02 Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung

Country Status (5)

Country Link
US (1) US6007673A (de)
EP (1) EP0838838B1 (de)
KR (1) KR100432391B1 (de)
DE (1) DE69739711D1 (de)
TW (1) TW369676B (de)

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US6623595B1 (en) * 2000-03-27 2003-09-23 Applied Materials, Inc. Wavy and roughened dome in plasma processing reactor
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US6777045B2 (en) * 2001-06-27 2004-08-17 Applied Materials Inc. Chamber components having textured surfaces and method of manufacture
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US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
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US20050178331A1 (en) * 2004-02-13 2005-08-18 Fourtner Lawrence C. Electrode assembly and method for producing an electrode plate
CN1914714B (zh) * 2004-03-31 2011-09-28 富士通半导体股份有限公司 基板处理装置及半导体装置的制造方法
CN1973363B (zh) * 2004-06-21 2011-09-14 东京毅力科创株式会社 等离子体处理装置和方法
JPWO2006008889A1 (ja) * 2004-07-20 2008-05-01 シャープ株式会社 プラズマ処理装置
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
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US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
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US8173228B2 (en) * 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
WO2007088904A1 (ja) * 2006-01-31 2007-08-09 Tokyo Electron Limited マイクロ波プラズマ処理装置
WO2007097595A1 (en) * 2006-02-27 2007-08-30 Lg Chem Ltd. Very thin achromatic quater wave film laminate for transflective lcd and method for producing the same
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JP5213530B2 (ja) * 2008-06-11 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置
JP5453768B2 (ja) * 2008-11-05 2014-03-26 豊田合成株式会社 化合物半導体製造装置、化合物半導体の製造方法、および化合物半導体製造用治具
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
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US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
KR102163381B1 (ko) * 2013-03-15 2020-10-08 어플라이드 머티어리얼스, 인코포레이티드 폴리머 관리를 통한 에칭 시스템의 생산성 개선
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9017526B2 (en) * 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
US10008366B2 (en) * 2015-09-08 2018-06-26 Applied Materials, Inc. Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing
US20210225616A1 (en) * 2018-01-08 2021-07-22 Lam Research Corporation Components and Processes for Managing Plasma Process Byproduct Materials
CN108899295A (zh) * 2018-07-06 2018-11-27 宁波江丰电子材料股份有限公司 蚀刻腔室以及蚀刻腔室加工方法
CN109786194B (zh) * 2018-12-20 2020-10-30 丰豹智能科技(上海)有限公司 一种改变离子束方向的装置
CN110211900B (zh) * 2019-05-31 2022-02-25 昆山国显光电有限公司 一种天板及干刻设备
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Also Published As

Publication number Publication date
EP0838838B1 (de) 2009-12-23
EP0838838A2 (de) 1998-04-29
US6007673A (en) 1999-12-28
TW369676B (en) 1999-09-11
KR100432391B1 (ko) 2004-07-16
EP0838838A3 (de) 1999-04-14
KR19980032528A (ko) 1998-07-25

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