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DE69724803D1 - Antischmelzsicherungsdetektorschaltung - Google Patents

Antischmelzsicherungsdetektorschaltung

Info

Publication number
DE69724803D1
DE69724803D1 DE69724803T DE69724803T DE69724803D1 DE 69724803 D1 DE69724803 D1 DE 69724803D1 DE 69724803 T DE69724803 T DE 69724803T DE 69724803 T DE69724803 T DE 69724803T DE 69724803 D1 DE69724803 D1 DE 69724803D1
Authority
DE
Germany
Prior art keywords
circuit
detector circuit
antifuses
fuse detector
anti fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69724803T
Other languages
English (en)
Other versions
DE69724803T2 (de
Inventor
L Casper
G Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE69724803D1 publication Critical patent/DE69724803D1/de
Application granted granted Critical
Publication of DE69724803T2 publication Critical patent/DE69724803T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Fuses (AREA)
  • Control Of Combustion (AREA)
  • Fire-Detection Mechanisms (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Logic Circuits (AREA)
DE69724803T 1996-10-03 1997-10-03 Antischmelzsicherungsdetektorschaltung Expired - Lifetime DE69724803T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US725430 1996-10-03
US08/725,430 US5812477A (en) 1996-10-03 1996-10-03 Antifuse detection circuit
PCT/US1997/017985 WO1998014953A1 (en) 1996-10-03 1997-10-03 Antifuse detection circuit

Publications (2)

Publication Number Publication Date
DE69724803D1 true DE69724803D1 (de) 2003-10-16
DE69724803T2 DE69724803T2 (de) 2004-04-01

Family

ID=24914520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724803T Expired - Lifetime DE69724803T2 (de) 1996-10-03 1997-10-03 Antischmelzsicherungsdetektorschaltung

Country Status (8)

Country Link
US (5) US5812477A (de)
EP (1) EP0929899B1 (de)
JP (1) JP3459968B2 (de)
KR (1) KR100321813B1 (de)
AT (1) ATE249675T1 (de)
AU (1) AU4669497A (de)
DE (1) DE69724803T2 (de)
WO (1) WO1998014953A1 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9600384D0 (en) * 1996-01-09 1996-03-13 Nyfotek As Dna glycosylases
US5812477A (en) * 1996-10-03 1998-09-22 Micron Technology, Inc. Antifuse detection circuit
GB2318228B (en) * 1996-10-09 2000-08-09 Ericsson Telefon Ab L M Trimming circuit
JP2002509716A (ja) 1998-03-31 2002-04-02 ユニバーシティ テクノロジー コーポレイション テロメラーゼ抗原に対する免疫応答を惹起するための方法および組成物
JP2000011684A (ja) * 1998-06-18 2000-01-14 Mitsubishi Electric Corp 入力保護回路、アンチフューズアドレス検出回路および半導体集積回路装置
US6240033B1 (en) 1999-01-11 2001-05-29 Hyundai Electronics Industries Co., Ltd. Antifuse circuitry for post-package DRAM repair
US6219215B1 (en) 1999-04-30 2001-04-17 International Business Machines Corporation Chip thermal protection device
KR100616215B1 (ko) * 1999-12-29 2006-08-25 주식회사 하이닉스반도체 안티퓨즈를 이용한 리페어 회로
KR100376265B1 (ko) * 1999-12-29 2003-03-17 주식회사 하이닉스반도체 모스 구조의 안티퓨즈를 이용한 메모리 리페어 회로
US6208549B1 (en) * 2000-02-24 2001-03-27 Xilinx, Inc. One-time programmable poly-fuse circuit for implementing non-volatile functions in a standard sub 0.35 micron CMOS
JP2002133895A (ja) * 2000-08-17 2002-05-10 Toshiba Corp アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法
US6525955B1 (en) * 2001-12-18 2003-02-25 Broadcom Corporation Memory cell with fuse element
US6383924B1 (en) * 2000-12-13 2002-05-07 Micron Technology, Inc. Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials
US6417695B1 (en) 2001-03-15 2002-07-09 Micron Technology, Inc. Antifuse reroute of dies
US6426668B1 (en) 2001-03-22 2002-07-30 International Business Machines Corporation Imbalanced sense amplifier fuse detection circuit
US6384666B1 (en) 2001-03-23 2002-05-07 International Business Machines Corporation Antifuse latch device with controlled current programming and variable trip point
US7142577B2 (en) * 2001-05-16 2006-11-28 Micron Technology, Inc. Method of forming mirrors by surface transformation of empty spaces in solid state materials and structures thereon
US6628561B2 (en) * 2001-08-30 2003-09-30 Micron Technology, Inc. Small anti-fuse circuit to facilitate parallel fuse blowing
US6704236B2 (en) * 2002-01-03 2004-03-09 Broadcom Corporation Method and apparatus for verification of a gate oxide fuse element
US6693819B2 (en) 2002-01-08 2004-02-17 Broadcom Corporation High voltage switch circuitry
US6549063B1 (en) * 2002-01-11 2003-04-15 Infineon Technologies Ag Evaluation circuit for an anti-fuse
US20040176483A1 (en) * 2003-03-05 2004-09-09 Micron Technology, Inc. Cellular materials formed using surface transformation
FR2835947A1 (fr) * 2002-02-11 2003-08-15 St Microelectronics Sa Extraction d'un code binaire a partir de parametres physiques d'un circuit integre
US7132348B2 (en) * 2002-03-25 2006-11-07 Micron Technology, Inc. Low k interconnect dielectric using surface transformation
US6943065B2 (en) * 2002-03-25 2005-09-13 Micron Technology Inc. Scalable high performance antifuse structure and process
JP2004022736A (ja) 2002-06-14 2004-01-22 Nec Electronics Corp 不揮発性ラッチ回路および半導体装置
US6995601B2 (en) * 2004-01-14 2006-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Fuse state detection circuit
US7149114B2 (en) * 2004-03-17 2006-12-12 Cypress Semiconductor Corp. Latch circuit and method for writing and reading volatile and non-volatile data to and from the latch
US7054216B2 (en) * 2004-03-17 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Programmable MOS device formed by hot carrier effect
JP2008515292A (ja) * 2004-09-24 2008-05-08 サイプレス セミコンダクター コーポレイション ワンタイムプログラマブルラッチおよび方法
US7276955B2 (en) * 2005-04-14 2007-10-02 Micron Technology, Inc. Circuit and method for stable fuse detection
US7426142B1 (en) 2005-05-05 2008-09-16 Cypress Semiconductor Corporation Device and method for sensing programming status of non-volatile memory elements
KR100687042B1 (ko) * 2005-05-31 2007-02-26 삼성전자주식회사 안티퓨즈 회로 및 안티퓨즈 방법
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
US7215586B2 (en) * 2005-06-29 2007-05-08 Micron Technology, Inc. Apparatus and method for repairing a semiconductor memory
US8072834B2 (en) 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US7339848B1 (en) 2005-11-03 2008-03-04 Cypress Semiconductor Corporation Anti-fuse latch circuit and method including self-test
US7741865B1 (en) * 2006-03-07 2010-06-22 Lattice Semiconductor Corporation Soft error upset hardened integrated circuit systems and methods
US7859925B1 (en) 2006-03-31 2010-12-28 Cypress Semiconductor Corporation Anti-fuse latch self-test circuit and method
JP4191202B2 (ja) * 2006-04-26 2008-12-03 エルピーダメモリ株式会社 不揮発性記憶素子を搭載した半導体記憶装置
KR100855467B1 (ko) * 2006-09-27 2008-09-01 삼성전자주식회사 이종 셀 타입을 지원하는 비휘발성 메모리를 위한 맵핑장치 및 방법
US7821859B1 (en) 2006-10-24 2010-10-26 Cypress Semiconductor Corporation Adaptive current sense amplifier with direct array access capability
KR100845407B1 (ko) * 2007-02-16 2008-07-10 매그나칩 반도체 유한회사 원-타임-프로그래머블 셀 및 이를 구비하는 ｏｔｐ 메모리
US7859906B1 (en) 2007-03-30 2010-12-28 Cypress Semiconductor Corporation Circuit and method to increase read margin in non-volatile memories using a differential sensing circuit
US7881118B2 (en) * 2007-05-25 2011-02-01 Cypress Semiconductor Corporation Sense transistor protection for memory programming
TWI355046B (en) * 2007-07-10 2011-12-21 Nanya Technology Corp Two bit memory structure and method of making the
TWI393145B (zh) * 2007-10-29 2013-04-11 Elpida Memory Inc 具有反熔絲電路之半導體裝置及將位址寫入至反熔絲電路的方法
JP5350912B2 (ja) * 2009-04-13 2013-11-27 セイコーインスツル株式会社 光検出回路及び電子機器
JP2012109329A (ja) * 2010-11-16 2012-06-07 Elpida Memory Inc 半導体装置及びその制御方法
JP2015026709A (ja) * 2013-07-26 2015-02-05 マイクロン テクノロジー， インク． 半導体装置
US10276239B2 (en) * 2017-04-27 2019-04-30 Ememory Technology Inc. Memory cell and associated array structure

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3818556A1 (de) 1988-06-01 1989-12-07 Pfeiffer Vakuumtechnik Magnetlager fuer eine schnell rotierende vakuumpumpe
US4995004A (en) * 1989-05-15 1991-02-19 Dallas Semiconductor Corporation RAM/ROM hybrid memory architecture
US5166556A (en) 1991-01-22 1992-11-24 Myson Technology, Inc. Programmable antifuse structure, process, logic cell and architecture for programmable integrated circuits
US5334880A (en) * 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
JP2829156B2 (ja) * 1991-07-25 1998-11-25 株式会社東芝 不揮発性半導体記憶装置の冗長回路
US5241496A (en) * 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
US5110754A (en) * 1991-10-04 1992-05-05 Micron Technology, Inc. Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
US5200652A (en) * 1991-11-13 1993-04-06 Micron Technology, Inc. Programmable/reprogrammable structure combining both antifuse and fuse elements
US5257222A (en) * 1992-01-14 1993-10-26 Micron Technology, Inc. Antifuse programming by transistor snap-back
US5471426A (en) * 1992-01-31 1995-11-28 Sgs-Thomson Microelectronics, Inc. Redundancy decoder
US5257225A (en) * 1992-03-12 1993-10-26 Micron Technology, Inc. Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude
US5325054A (en) * 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
EP0655743B1 (de) * 1993-11-30 1999-08-25 STMicroelectronics S.r.l. Integrierte Schaltung für die Programmierung einer Speicherzelle eines nicht flüchtigen Speicherregisters
US5426614A (en) 1994-01-13 1995-06-20 Texas Instruments Incorporated Memory cell with programmable antifuse technology
US5440246A (en) * 1994-03-22 1995-08-08 Mosel Vitelic, Incorporated Programmable circuit with fusible latch
US5680360A (en) * 1995-06-06 1997-10-21 Integrated Device Technology, Inc. Circuits for improving the reliablity of antifuses in integrated circuits
US5689455A (en) * 1995-08-31 1997-11-18 Micron Technology, Inc. Circuit for programming antifuse bits
US5786710A (en) * 1995-12-29 1998-07-28 Cypress Semiconductor Corp. Programmable I/O cell with data conversion capability
US5793775A (en) * 1996-01-26 1998-08-11 Micron Quantum Devices, Inc. Low voltage test mode operation enable scheme with hardware safeguard
US5631862A (en) * 1996-03-05 1997-05-20 Micron Technology, Inc. Self current limiting antifuse circuit
US5734617A (en) * 1996-08-01 1998-03-31 Micron Technology Corporation Shared pull-up and selection circuitry for programmable cells such as antifuse cells
US5812477A (en) * 1996-10-03 1998-09-22 Micron Technology, Inc. Antifuse detection circuit
US5768179A (en) * 1996-10-11 1998-06-16 Xilinx, Inc. Antifuse load sram cell
US6020777A (en) * 1997-09-26 2000-02-01 International Business Machines Corporation Electrically programmable anti-fuse circuit
US6016264A (en) * 1998-05-26 2000-01-18 Vanguard International Semiconductor Corporation Antifuse programming and detecting circuit
US5892716A (en) * 1998-06-04 1999-04-06 Micron Technology, Inc. Method and apparatus for global testing the impedance of a programmable element
KR100359856B1 (ko) * 1998-06-30 2003-01-08 주식회사 하이닉스반도체 앤티퓨즈를갖는내부전압발생기
KR100359857B1 (ko) * 1998-06-30 2003-01-08 주식회사 하이닉스반도체 크로스커플드피드백루프를갖는앤티퓨즈의프로그래밍회로
KR100321168B1 (ko) * 1998-06-30 2002-05-13 박종섭 앤티퓨즈를갖는리던던시회로의리페어회로
KR100321167B1 (ko) * 1998-06-30 2002-05-13 박종섭 앤티퓨즈로미세조정되는기준전압발생기

Also Published As

Publication number Publication date
US20020021610A1 (en) 2002-02-21
US6625080B2 (en) 2003-09-23
ATE249675T1 (de) 2003-09-15
US20020060941A1 (en) 2002-05-23
US6633506B2 (en) 2003-10-14
US6181627B1 (en) 2001-01-30
EP0929899A1 (de) 1999-07-21
JP2000503794A (ja) 2000-03-28
WO1998014953A1 (en) 1998-04-09
KR100321813B1 (ko) 2002-02-02
AU4669497A (en) 1998-04-24
KR20000048888A (ko) 2000-07-25
US5812477A (en) 1998-09-22
US6084814A (en) 2000-07-04
EP0929899B1 (de) 2003-09-10
JP3459968B2 (ja) 2003-10-27
DE69724803T2 (de) 2004-04-01

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Legal Events

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