DE69710655D1 - Gaseinleitsystem für CVD Reaktoren - Google Patents

Gaseinleitsystem für CVD Reaktoren

Info

Publication number: DE69710655D1
Authority: DE; Germany
Prior art keywords: gas supply; supply system; cvd reactors; reactors; cvd
Prior art date: 1996-08-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69710655T

Other languages

English (en)

Other versions

DE69710655T2 (de

Inventor

Joseph H Macleish

Robert D Mailho

Mahesh K Sanganeria

Solar Enrique Suarez Del

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Concept Systems Design Inc

Original Assignee

Concept Systems Design Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-08-07

Filing date

1997-08-06

Publication date

2002-04-04

1996-08-07 Priority claimed from US08/693,721 external-priority patent/US5653808A/en

1997-08-06 Application filed by Concept Systems Design Inc filed Critical Concept Systems Design Inc

2002-04-04 Application granted granted Critical

2002-04-04 Publication of DE69710655D1 publication Critical patent/DE69710655D1/de

2002-10-31 Publication of DE69710655T2 publication Critical patent/DE69710655T2/de

2017-08-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Mechanical Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Chemical Vapour Deposition (AREA)

DE1997610655 1996-08-07 1997-08-06 Gaseinleitsystem für CVD Reaktoren Expired - Fee Related DE69710655T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US08/693,721 US5653808A (en)	1996-08-07	1996-08-07	Gas injection system for CVD reactors
US08/876,967 US6113984A (en)	1996-08-07	1997-06-16	Gas injection system for CVD reactors

Publications (2)

Publication Number	Publication Date
DE69710655D1 true DE69710655D1 (de)	2002-04-04
DE69710655T2 DE69710655T2 (de)	2002-10-31

Family

ID=27105230

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE1997610655 Expired - Fee Related DE69710655T2 (de)	1996-08-07	1997-08-06	Gaseinleitsystem für CVD Reaktoren

Country Status (4)

Country	Link
EP (1)	EP0823491B1 (de)
JP (1)	JP3167964B2 (de)
CN (1)	CN1168848C (de)
DE (1)	DE69710655T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5789309A (en) *	1996-12-30	1998-08-04	Memc Electronic Materials, Inc.	Method and system for monocrystalline epitaxial deposition
US6596086B1 (en)	1998-04-28	2003-07-22	Shin-Etsu Handotai Co., Ltd.	Apparatus for thin film growth
US6225601B1 (en) *	1998-07-13	2001-05-01	Applied Komatsu Technology, Inc.	Heating a substrate support in a substrate handling chamber
US6410090B1 (en) *	1998-09-29	2002-06-25	Applied Materials, Inc.	Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
JP3745959B2 (ja) *	2000-12-28	2006-02-15	セイコーエプソン株式会社	シリコン薄膜パターンの形成方法
UA84862C2 (en) *	2003-03-03	2008-12-10	Месье-Бугатти	Substrate
JP5025609B2 (ja) *	2003-09-04	2012-09-12	株式会社日立ハイテクノロジーズ	真空処理装置
US7335277B2 (en)	2003-09-08	2008-02-26	Hitachi High-Technologies Corporation	Vacuum processing apparatus
DE102004029466A1 (de) *	2004-06-18	2006-01-05	Leybold Optics Gmbh	Medieninjektor
JP5202839B2 (ja) *	2006-12-25	2013-06-05	東京エレクトロン株式会社	成膜装置および成膜方法
JP2008192642A (ja) *	2007-01-31	2008-08-21	Tokyo Electron Ltd	基板処理装置
WO2009057185A1 (ja) *	2007-10-29	2009-05-07	Shimadzu Corporation	Ｃｖｄ装置
JP2013197401A (ja) *	2012-03-21	2013-09-30	Ulvac Japan Ltd	ロードロックチャンバ
CN104962878B (zh) *	2015-06-12	2017-10-20	北京中科优唯科技有限公司	双喷头mocvd反应室
JP6562546B2 (ja) *	2015-07-14	2019-08-21	昭和電工株式会社	ウェハ支持台、ウェハ支持体、化学気相成長装置
CN107723790B (zh) *	2016-08-12	2020-07-07	上海新昇半导体科技有限公司	一种外延设备、设备制作方法及外延方法
CN110079786A (zh) *	2019-06-03	2019-08-02	杭州睿清环保科技有限公司	用于制备大面积金刚石薄膜的热壁热丝cvd的装置
CN110306171B (zh) *	2019-06-28	2023-09-08	郑州磨料磨具磨削研究所有限公司	一种改善气体分布的沉积室及mpcvd装置
KR20220032608A (ko) *	2019-07-15	2022-03-15	어플라이드 머티어리얼스, 인코포레이티드	평판 디스플레이들을 위한 대면적 고밀도 플라즈마 프로세싱 챔버
CN112921298A (zh) *	2021-01-28	2021-06-08	福州大学	一种氮化硼涂层及其制备方法及产品
CN112898049A (zh) *	2021-01-28	2021-06-04	赛瑞特科技(福建)有限公司	一种氮化硼涂层蒸发舟及其制备方法
DE102021125463A1 (de)	2021-09-30	2023-03-30	Heliatek Gmbh	Verfahren zum indirekten thermischen Erwärmen eines Substrats

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3772659D1 (de) *	1986-06-28	1991-10-10	Ulvac Corp	Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik.
US5167716A (en) *	1990-09-28	1992-12-01	Gasonics, Inc.	Method and apparatus for batch processing a semiconductor wafer
JP2763222B2 (ja) *	1991-12-13	1998-06-11	三菱電機株式会社	化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置
US5551982A (en) *	1994-03-31	1996-09-03	Applied Materials, Inc.	Semiconductor wafer process chamber with susceptor back coating

1997
- 1997-08-06 EP EP19970305982 patent/EP0823491B1/de not_active Expired - Lifetime
- 1997-08-06 DE DE1997610655 patent/DE69710655T2/de not_active Expired - Fee Related
- 1997-08-07 CN CNB971192790A patent/CN1168848C/zh not_active Expired - Fee Related
- 1997-08-07 JP JP21372197A patent/JP3167964B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP3167964B2 (ja)	2001-05-21
DE69710655T2 (de)	2002-10-31
EP0823491A2 (de)	1998-02-11
EP0823491B1 (de)	2002-02-27
CN1168848C (zh)	2004-09-29
JPH10183353A (ja)	1998-07-14
EP0823491A3 (de)	1999-01-20
CN1176317A (zh)	1998-03-18

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Legal Events

Date	Code	Title	Description
2003-04-03	8364	No opposition during term of opposition
2009-07-02	8339	Ceased/non-payment of the annual fee