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DE69528384D1 - Halbleiterschaltermatrix mit schutz vor elektrischer entladung und herstellungsverfahren - Google Patents

Halbleiterschaltermatrix mit schutz vor elektrischer entladung und herstellungsverfahren

Info

Publication number
DE69528384D1
DE69528384D1 DE69528384T DE69528384T DE69528384D1 DE 69528384 D1 DE69528384 D1 DE 69528384D1 DE 69528384 T DE69528384 T DE 69528384T DE 69528384 T DE69528384 T DE 69528384T DE 69528384 D1 DE69528384 D1 DE 69528384D1
Authority
DE
Germany
Prior art keywords
manufacturing process
protection against
semiconductor switch
electrical discharge
switch matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69528384T
Other languages
English (en)
Inventor
Shou Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIRE TECHNOLOGY Inc
Original Assignee
FIRE TECHNOLOGY Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4173095&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69528384(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by FIRE TECHNOLOGY Inc filed Critical FIRE TECHNOLOGY Inc
Application granted granted Critical
Publication of DE69528384D1 publication Critical patent/DE69528384D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE69528384T 1995-07-31 1995-07-31 Halbleiterschaltermatrix mit schutz vor elektrischer entladung und herstellungsverfahren Expired - Lifetime DE69528384D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CA1995/000454 WO1997005654A1 (en) 1995-07-31 1995-07-31 Semiconductor switch array with electrostatic discharge protection and method of fabricating

Publications (1)

Publication Number Publication Date
DE69528384D1 true DE69528384D1 (de) 2002-10-31

Family

ID=4173095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528384T Expired - Lifetime DE69528384D1 (de) 1995-07-31 1995-07-31 Halbleiterschaltermatrix mit schutz vor elektrischer entladung und herstellungsverfahren

Country Status (5)

Country Link
US (1) US6013923A (de)
EP (1) EP0842536B1 (de)
JP (1) JPH11509938A (de)
DE (1) DE69528384D1 (de)
WO (1) WO1997005654A1 (de)

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DE69623659T2 (de) * 1996-05-08 2003-05-08 Ifire Technology Inc., Fort Saskatchewan Hochauflösender flacher sensor für strahlungsabbildungssystem
JPH10268794A (ja) * 1997-03-26 1998-10-09 Sharp Corp 表示パネル
USRE41873E1 (en) 1997-05-12 2010-10-26 Samsung Electronics Co., Ltd. Multiple testing bars for testing liquid crystal display and method thereof
US6734925B1 (en) * 1998-12-07 2004-05-11 Samsung Electronics Co., Ltd. Multiple testing bars for testing liquid crystal display and method thereof
US8310262B2 (en) * 1997-12-05 2012-11-13 Samsung Electronics Co., Ltd. Multiple testing bars for testing liquid crystal display and method thereof
US6486470B2 (en) 1998-11-02 2002-11-26 1294339 Ontario, Inc. Compensation circuit for use in a high resolution amplified flat panel for radiation imaging
US6545711B1 (en) * 1998-11-02 2003-04-08 Agilent Technologies, Inc. Photo diode pixel sensor array having a guard ring
GB9902252D0 (en) 1999-02-03 1999-03-24 Philips Electronics Nv X-ray filter and x-ray examination apparatus using the same
TW498553B (en) * 1999-03-11 2002-08-11 Seiko Epson Corp Active matrix substrate, electro-optical apparatus and method for producing active matrix substrate
AU4603400A (en) 1999-05-10 2000-11-21 Yves Chartier Energy selective detection systems
JP4630432B2 (ja) * 2000-08-09 2011-02-09 キヤノン株式会社 光電変換装置
GB0100733D0 (en) 2001-01-11 2001-02-21 Koninkl Philips Electronics Nv A method of manufacturing an active matrix substrate
JP4646420B2 (ja) 2001-02-28 2011-03-09 三菱電機株式会社 薄膜トランジスタアレイ基板およびそれを用いた表示装置
GB0119299D0 (en) * 2001-08-08 2001-10-03 Koninkl Philips Electronics Nv Electrostatic discharge protection for pixellated electronic device
KR100870013B1 (ko) * 2002-08-27 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US7440865B1 (en) * 2003-02-03 2008-10-21 Finisar Corporation Screening optical transceiver modules for electrostatic discharge damage
JP2004246202A (ja) * 2003-02-14 2004-09-02 Koninkl Philips Electronics Nv 静電放電保護回路を有する電子装置
CA2517216A1 (en) * 2003-02-28 2004-10-07 Brown University Nanopores, methods for using same, methods for making same and methods for characterizing biomolecules using same
TWI239403B (en) * 2003-08-26 2005-09-11 Chunghwa Picture Tubes Ltd A combining detection circuit for a display panel
JP4281622B2 (ja) * 2004-05-31 2009-06-17 ソニー株式会社 表示装置及び検査方法
US7217591B2 (en) * 2004-06-02 2007-05-15 Perkinelmer, Inc. Method and process intermediate for electrostatic discharge protection in flat panel imaging detectors
TWI267988B (en) * 2005-08-31 2006-12-01 Chunghwa Picture Tubes Ltd Thin film transistor array, electrostatic discharge protective device thereof, and methods for fabricating the same
US7470942B2 (en) 2005-09-07 2008-12-30 Chunghwa Picture Tube., Ltd. Thin film transistor array and electrostatic discharge protective device thereof
KR101316791B1 (ko) * 2007-01-05 2013-10-11 삼성디스플레이 주식회사 게이트 구동회로 및 이를 포함하는 액정 표시 장치, 박막트랜지스터 기판의 제조 방법
TW200839400A (en) * 2007-03-27 2008-10-01 Prime View Int Co Ltd An active matrix device or flat panel display with electrostatic protection
TWI376544B (en) * 2008-06-16 2012-11-11 Wintek Corp Liquid crystal display panel
KR20100055709A (ko) * 2008-11-18 2010-05-27 삼성전자주식회사 표시 기판 및 이를 구비한 표시 장치
US8248149B2 (en) * 2008-12-11 2012-08-21 Incident Technologies Inc. Apparatus and methods for registering inputs from a user
CN102244082B (zh) * 2010-05-13 2014-12-17 上海天马微电子有限公司 阵列基板制造方法
WO2014066909A1 (en) * 2012-10-28 2014-05-01 The Regents Of The University Of California High density nanopore polynucleotide sequencer
CN103325327B (zh) * 2013-06-20 2016-03-30 深圳市华星光电技术有限公司 一种显示面板、显示面板的检测线路
KR102106006B1 (ko) * 2013-08-14 2020-05-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN103513454B (zh) * 2013-08-29 2015-06-10 京东方科技集团股份有限公司 阵列基板及其检测方法和制备方法
US9311907B2 (en) 2014-03-17 2016-04-12 Incident Technologies, Inc. Musical input device and dynamic thresholding
CN104765169B (zh) * 2015-02-04 2018-01-05 深圳市华星光电技术有限公司 一种阵列基板的检测线路及阵列基板
US11145688B2 (en) * 2017-06-28 2021-10-12 Sharp Kabushiki Kaisha Active matrix substrate and method for manufacturing same
CN109585422B (zh) 2017-09-29 2021-06-11 昆山国显光电有限公司 阵列基板及其制造方法
US20200144307A1 (en) * 2018-11-06 2020-05-07 HKC Corporation Limited Array substrate, manufacturing method of the array substrate, and display device
CN110854113B (zh) * 2019-10-29 2022-10-04 武汉华星光电技术有限公司 静电防护结构、制造方法以及阵列基板母板
EP4113611A4 (de) * 2020-02-27 2023-04-19 BOE Technology Group Co., Ltd. Hauptplatine und herstellungsverfahren dafür
CN117410319B (zh) * 2023-12-12 2024-03-26 烟台睿创微纳技术股份有限公司 一种hemt器件及其制备方法

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JP2796623B2 (ja) * 1986-02-27 1998-09-10 セイコーインスツルメンツ株式会社 液晶表示装置
US4803536A (en) * 1986-10-24 1989-02-07 Xerox Corporation Electrostatic discharge protection network for large area transducer arrays
JPH01303416A (ja) * 1988-05-31 1989-12-07 Mitsubishi Electric Corp マトリクス型表示装置
JP2735236B2 (ja) * 1988-08-29 1998-04-02 株式会社日立製作所 液晶表示装置の製造方法
JPH02242229A (ja) * 1989-03-16 1990-09-26 Matsushita Electron Corp 液晶表示装置の製造方法
JPH032838A (ja) * 1989-05-31 1991-01-09 Matsushita Electron Corp 液晶表示装置の製造方法
US5220443A (en) * 1991-04-29 1993-06-15 Nec Corporation Matrix wiring substrate and active matrix display having non-linear resistance elements for electrostatic discharge protection
US5373377A (en) * 1992-02-21 1994-12-13 Kabushiki Kaisha Toshiba Liquid crystal device with shorting ring and transistors for electrostatic discharge protection
US5497146A (en) * 1992-06-03 1996-03-05 Frontec, Incorporated Matrix wiring substrates
US5313319A (en) * 1992-06-17 1994-05-17 General Electric Company Active array static protection devices
NL194873C (nl) * 1992-08-13 2003-05-06 Oki Electric Ind Co Ltd Dunnefilmtransistorenreeks en daarvan gebruikmakende vloeibare kristalweergeefinrichting.
GB9226890D0 (en) * 1992-12-23 1993-02-17 Philips Electronics Uk Ltd An imaging device
JPH06267986A (ja) * 1993-03-17 1994-09-22 Hitachi Ltd 薄膜トランジスタの製造方法
WO1997005654A1 (en) * 1995-07-31 1997-02-13 Litton Systems Canada Limited Semiconductor switch array with electrostatic discharge protection and method of fabricating
US5668032A (en) * 1995-07-31 1997-09-16 Holmberg; Scott H. Active matrix ESD protection and testing scheme
KR100252308B1 (ko) * 1997-01-10 2000-04-15 구본준, 론 위라하디락사 박막트랜지스터 어레이

Also Published As

Publication number Publication date
WO1997005654A1 (en) 1997-02-13
US6013923A (en) 2000-01-11
EP0842536B1 (de) 2002-09-25
JPH11509938A (ja) 1999-08-31
EP0842536A1 (de) 1998-05-20

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Legal Events

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8332 No legal effect for de