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DE69432165D1 - Vorrichtung und system zum lichtbogenionenplattieren - Google Patents

Vorrichtung und system zum lichtbogenionenplattieren

Info

Publication number
DE69432165D1
DE69432165D1 DE69432165T DE69432165T DE69432165D1 DE 69432165 D1 DE69432165 D1 DE 69432165D1 DE 69432165 T DE69432165 T DE 69432165T DE 69432165 T DE69432165 T DE 69432165T DE 69432165 D1 DE69432165 D1 DE 69432165D1
Authority
DE
Germany
Prior art keywords
arc plating
plating
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69432165T
Other languages
English (en)
Other versions
DE69432165T2 (de
Inventor
Koji Hanaguri
Kunihiko Tsuji
Homare Nomura
Hiroshi Tamagaki
Hiroshi Kawaguchi
Katsuhiko Shimojima
Hirofumi Fujii
Toshiya Kido
Takeshi Suzuki
Yoichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of DE69432165D1 publication Critical patent/DE69432165D1/de
Application granted granted Critical
Publication of DE69432165T2 publication Critical patent/DE69432165T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69432165T 1993-03-15 1994-03-15 Vorrichtung und system zum lichtbogenionenplattieren Expired - Lifetime DE69432165T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8140693 1993-03-15
PCT/JP1994/000410 WO1994021839A1 (en) 1993-03-15 1994-03-15 Apparatus and system for arc ion plating

Publications (2)

Publication Number Publication Date
DE69432165D1 true DE69432165D1 (de) 2003-04-03
DE69432165T2 DE69432165T2 (de) 2003-12-11

Family

ID=13745455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432165T Expired - Lifetime DE69432165T2 (de) 1993-03-15 1994-03-15 Vorrichtung und system zum lichtbogenionenplattieren

Country Status (4)

Country Link
US (1) US5730847A (de)
EP (1) EP0643151B9 (de)
DE (1) DE69432165T2 (de)
WO (1) WO1994021839A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932078A (en) * 1997-08-30 1999-08-03 United Technologies Corporation Cathodic arc vapor deposition apparatus
US5972185A (en) * 1997-08-30 1999-10-26 United Technologies Corporation Cathodic arc vapor deposition apparatus (annular cathode)
US5997705A (en) * 1999-04-14 1999-12-07 Vapor Technologies, Inc. Rectangular filtered arc plasma source
US7250196B1 (en) 1999-10-26 2007-07-31 Basic Resources, Inc. System and method for plasma plating
US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
US6521104B1 (en) 2000-05-22 2003-02-18 Basic Resources, Inc. Configurable vacuum system and method
US6503379B1 (en) * 2000-05-22 2003-01-07 Basic Research, Inc. Mobile plating system and method
US20030180450A1 (en) * 2002-03-22 2003-09-25 Kidd Jerry D. System and method for preventing breaker failure
US7258933B2 (en) * 2002-06-25 2007-08-21 Mitsubishi Materials Corporation Coated cutting tool member
US7150792B2 (en) * 2002-10-15 2006-12-19 Kobe Steel, Ltd. Film deposition system and film deposition method using the same
JP4199062B2 (ja) * 2003-07-07 2008-12-17 株式会社神戸製鋼所 真空蒸着装置
US20050126497A1 (en) * 2003-09-30 2005-06-16 Kidd Jerry D. Platform assembly and method
JP5014603B2 (ja) * 2005-07-29 2012-08-29 株式会社アルバック 真空処理装置
US20070240982A1 (en) * 2005-10-17 2007-10-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Arc ion plating apparatus
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
TWI386509B (zh) * 2007-05-25 2013-02-21 Hon Hai Prec Ind Co Ltd 翻面治具及翻面方法
US20100218721A1 (en) * 2007-09-05 2010-09-02 Atomic Energy Council - Institute Of Nuclear Energy Research Hollow-cathode discharge apparatus for plasma-based processing
TWI400344B (zh) * 2008-09-02 2013-07-01 Metal Ind Res & Dev Ct Vacuum barrel and vacuum deposition machine for vacuum plating machine
US8673122B2 (en) 2009-04-07 2014-03-18 Magna Mirrors Of America, Inc. Hot tile sputtering system
DE102010032591A1 (de) * 2010-07-23 2012-01-26 Leybold Optics Gmbh Vorrichtung und Verfahren zur Vakuumbeschichtung
US20140110253A1 (en) * 2011-07-06 2014-04-24 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Vacuum coating apparatus
JP5916581B2 (ja) * 2012-10-12 2016-05-11 株式会社神戸製鋼所 Ｐｖｄ処理方法及びｐｖｄ処理装置
JP5941016B2 (ja) * 2013-05-27 2016-06-29 株式会社神戸製鋼所 成膜装置およびそれを用いた成膜方法
US20190276932A1 (en) * 2018-03-08 2019-09-12 Shimadzu Corporation Film forming apparatus and film forming method

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214690A (en) * 1975-07-25 1977-02-03 Dai Ichi Kogyo Seiyaku Co Ltd Method to dissolve the polyurethane resin
US4151059A (en) * 1977-12-27 1979-04-24 Coulter Stork U.S.A., Inc. Method and apparatus for sputtering multiple cylinders simultaneously
US4252626A (en) * 1980-03-10 1981-02-24 United Technologies Corporation Cathode sputtering with multiple targets
JPS583033A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd 木構造検索処理装置
GB8413776D0 (en) * 1984-05-30 1984-07-04 Dowty Electronics Ltd Sputtering process
JPS6179760A (ja) * 1984-09-27 1986-04-23 Shizuokaken 活性化反応性イオンプレ−テイングによるアルミニウム酸化物被膜形成法
JPS6326346A (ja) * 1986-07-18 1988-02-03 Kobe Steel Ltd ＴｉＮ被覆加工物とその製造方法及び装置
DE3881256D1 (de) * 1987-03-06 1993-07-01 Balzers Hochvakuum Verfahren und vorrichtungen zum vakuumbeschichten mittels einer elektrischen bogenentladung.
EP0298157B1 (de) * 1987-06-29 1992-09-02 Hauzer Holding B.V. Verfahren und Vorrichtung zur Beschichtung von Aushöhlungen von Gegenständen
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
JPH01136966A (ja) * 1987-11-24 1989-05-30 Kobe Steel Ltd 物理蒸着装置
JPH01161257A (ja) * 1987-12-18 1989-06-23 Konica Corp 静電像現像用トナー
JPH01205066A (ja) * 1988-02-12 1989-08-17 Kobe Steel Ltd 真空成膜装置
JPH01208449A (ja) * 1988-02-13 1989-08-22 Kobe Steel Ltd ダブルチャンバ真空成膜装置
JPH01263265A (ja) * 1988-04-13 1989-10-19 Kobe Steel Ltd 真空アーク蒸着法
JP2718731B2 (ja) * 1988-12-21 1998-02-25 株式会社神戸製鋼所 真空アーク蒸着装置及び真空アーク蒸着方法
JPH0311226A (ja) * 1989-06-08 1991-01-18 Matsushita Electric Ind Co Ltd 燃焼装置
JP2664483B2 (ja) * 1989-06-29 1997-10-15 株式会社神戸製鋼所 真空蒸着装置
DE58909591D1 (de) * 1989-08-21 1996-03-14 Balzers Hochvakuum Beschichtetes Werkstück mit einer Mischkristallbeschichtung, Verfahren zu dessen Herstellung, sowie Vorrichtung zur Durchführung des Verfahrens
JPH0379765A (ja) * 1989-08-21 1991-04-04 Shin Meiwa Ind Co Ltd 真空成膜装置
JPH03253566A (ja) * 1990-03-02 1991-11-12 Shin Meiwa Ind Co Ltd スパッタリング装置
ATE119948T1 (de) * 1990-03-30 1995-04-15 Sony Corp Sputteranlage.
US5037522B1 (en) * 1990-07-24 1996-07-02 Vergason Technology Inc Electric arc vapor deposition device
JPH04110747A (ja) * 1990-08-31 1992-04-13 Matsushita Electric Works Ltd 多孔質材料の耐凍害性測定装置
JPH0772338B2 (ja) * 1990-12-25 1995-08-02 株式会社神戸製鋼所 真空アーク蒸着装置
JP2694058B2 (ja) * 1991-03-05 1997-12-24 株式会社神戸製鋼所 アーク蒸着装置
US5269898A (en) * 1991-03-20 1993-12-14 Vapor Technologies, Inc. Apparatus and method for coating a substrate using vacuum arc evaporation
JP2565022B2 (ja) * 1991-05-27 1996-12-18 株式会社島津製作所 連続成膜装置
DE69226725T2 (de) * 1991-05-29 1999-02-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe Beschichtungsanlage mittels Kathodenzerstäubung und Methode zur Steuerung derselben
US5275709A (en) * 1991-11-07 1994-01-04 Leybold Aktiengesellschaft Apparatus for coating substrates, preferably flat, more or less plate-like substrates
JPH0673538A (ja) * 1992-05-26 1994-03-15 Kobe Steel Ltd アークイオンプレーティング装置

Also Published As

Publication number Publication date
EP0643151B9 (de) 2003-11-26
WO1994021839A1 (en) 1994-09-29
EP0643151A1 (de) 1995-03-15
EP0643151A4 (de) 1997-01-15
EP0643151B1 (de) 2003-02-26
DE69432165T2 (de) 2003-12-11
US5730847A (en) 1998-03-24

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Legal Events

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8364 No opposition during term of opposition