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DE69427461D1 - Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung - Google Patents

Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung

Info

Publication number
DE69427461D1
DE69427461D1 DE69427461T DE69427461T DE69427461D1 DE 69427461 D1 DE69427461 D1 DE 69427461D1 DE 69427461 T DE69427461 T DE 69427461T DE 69427461 T DE69427461 T DE 69427461T DE 69427461 D1 DE69427461 D1 DE 69427461D1
Authority
DE
Germany
Prior art keywords
circuit
volatile memory
memory element
corresponding read
programmable cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427461T
Other languages
English (en)
Other versions
DE69427461T2 (de
Inventor
Paolo Rolandi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69427461D1 publication Critical patent/DE69427461D1/de
Publication of DE69427461T2 publication Critical patent/DE69427461T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE69427461T 1994-03-31 1994-03-31 Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung Expired - Fee Related DE69427461T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830154A EP0675501B1 (de) 1994-03-31 1994-03-31 Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung

Publications (2)

Publication Number Publication Date
DE69427461D1 true DE69427461D1 (de) 2001-07-19
DE69427461T2 DE69427461T2 (de) 2002-04-11

Family

ID=8218413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69427461T Expired - Fee Related DE69427461T2 (de) 1994-03-31 1994-03-31 Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung

Country Status (4)

Country Link
US (1) US5696716A (de)
EP (1) EP0675501B1 (de)
JP (1) JPH0855496A (de)
DE (1) DE69427461T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788114B1 (de) * 1996-02-02 2002-11-13 STMicroelectronics S.r.l. Einschalt-Rücksetzschaltung mit Nullverbrauch
US5949710A (en) * 1996-04-10 1999-09-07 Altera Corporation Programmable interconnect junction
FR2752324B1 (fr) * 1996-08-08 1998-09-18 Sgs Thomson Microelectronics Memoire non volatile en circuit-integre a lecture rapide
US6115286A (en) * 1997-03-05 2000-09-05 Siemens Aktiengesellschaft Data memory
FR2764426B1 (fr) * 1997-06-04 1999-07-16 Sgs Thomson Microelectronics Circuit integre a memoire non volatile electriquement programmable avec registre de configuration d'options
DE19951818C2 (de) * 1999-10-27 2001-11-29 Micronas Gmbh Elektrisch lösch- und programmierbare nichtflüchtige Speicheranordnung
US7151682B2 (en) * 2004-12-22 2006-12-19 Intel Corporation Method and apparatus to read information from a content addressable memory (CAM) cell
US7768818B1 (en) 2008-03-27 2010-08-03 Altera Corporation Integrated circuit memory elements
US7911826B1 (en) 2008-03-27 2011-03-22 Altera Corporation Integrated circuits with clearable memory elements
JP6342350B2 (ja) * 2015-02-24 2018-06-13 東芝メモリ株式会社 半導体記憶装置
CN111755049B (zh) * 2019-03-28 2022-08-23 龙芯中科技术股份有限公司 存储单元和存储器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors
JPH01271996A (ja) * 1988-04-22 1989-10-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置
EP0347935B1 (de) * 1988-06-24 1995-07-26 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung
US4980859A (en) * 1989-04-07 1990-12-25 Xicor, Inc. NOVRAM cell using two differential decouplable nonvolatile memory elements
JPH04188498A (ja) * 1990-11-22 1992-07-07 Fujitsu Ltd 書き換え可能な不揮発性半導体記憶装置
JPH07122080A (ja) * 1993-08-31 1995-05-12 Sony Corp 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
US5696716A (en) 1997-12-09
JPH0855496A (ja) 1996-02-27
DE69427461T2 (de) 2002-04-11
EP0675501B1 (de) 2001-06-13
EP0675501A1 (de) 1995-10-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee