DE69419472D1 - THIN-LAYER TRANSISTOR AND DISPLAY USING THIS TRANSISTOR. - Google Patents
THIN-LAYER TRANSISTOR AND DISPLAY USING THIS TRANSISTOR.Info
- Publication number
- DE69419472D1 DE69419472D1 DE69419472T DE69419472T DE69419472D1 DE 69419472 D1 DE69419472 D1 DE 69419472D1 DE 69419472 T DE69419472 T DE 69419472T DE 69419472 T DE69419472 T DE 69419472T DE 69419472 D1 DE69419472 D1 DE 69419472D1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- thin
- display
- layer
- layer transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6732—Bottom-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9632893 | 1993-04-23 | ||
| JP08181594A JP3512849B2 (en) | 1993-04-23 | 1994-04-20 | Thin film transistor and display device using the same |
| PCT/JP1994/000658 WO1994025990A1 (en) | 1993-04-23 | 1994-04-21 | Thin film transistor and display using the transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69419472D1 true DE69419472D1 (en) | 1999-08-19 |
| DE69419472T2 DE69419472T2 (en) | 2000-02-03 |
Family
ID=26422815
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69432991T Expired - Lifetime DE69432991T2 (en) | 1993-04-23 | 1994-04-21 | Thin film transistor and display device using the same |
| DE69419472T Expired - Lifetime DE69419472T2 (en) | 1993-04-23 | 1994-04-21 | THIN-LAYER TRANSISTOR AND DISPLAY USING THIS TRANSISTOR. |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69432991T Expired - Lifetime DE69432991T2 (en) | 1993-04-23 | 1994-04-21 | Thin film transistor and display device using the same |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5563432A (en) |
| EP (2) | EP0647971B1 (en) |
| JP (1) | JP3512849B2 (en) |
| KR (1) | KR0156766B1 (en) |
| DE (2) | DE69432991T2 (en) |
| TW (1) | TW313632B (en) |
| WO (1) | WO1994025990A1 (en) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3284816B2 (en) * | 1995-03-22 | 2002-05-20 | ソニー株式会社 | Solid-state imaging device |
| US6873362B1 (en) * | 1995-03-22 | 2005-03-29 | Sony Corporation | Scanning switch transistor for solid-state imaging device |
| KR100223901B1 (en) * | 1996-10-11 | 1999-10-15 | 구자홍 | Liquid crystal display device and manufacturing method |
| JPH10144928A (en) * | 1996-11-08 | 1998-05-29 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2914496B2 (en) * | 1996-12-05 | 1999-06-28 | 日本電気株式会社 | Solid-state imaging device |
| JP3425851B2 (en) | 1997-06-30 | 2003-07-14 | 日本電気株式会社 | Thin film transistor for liquid crystal display |
| GB9806609D0 (en) * | 1998-03-28 | 1998-05-27 | Philips Electronics Nv | Electronic devices comprising thin-film transistors |
| KR100511172B1 (en) * | 1998-05-21 | 2005-11-30 | 엘지.필립스 엘시디 주식회사 | Structure of Thin Film Transistor |
| KR100325072B1 (en) * | 1998-10-28 | 2002-08-24 | 주식회사 현대 디스플레이 테크놀로지 | Manufacturing method of high opening rate and high transmittance liquid crystal display device |
| US6545291B1 (en) * | 1999-08-31 | 2003-04-08 | E Ink Corporation | Transistor design for use in the construction of an electronically driven display |
| JP4118484B2 (en) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP2001257350A (en) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JP4118485B2 (en) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP4700160B2 (en) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP4683688B2 (en) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing liquid crystal display device |
| JP4393662B2 (en) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | Method for manufacturing liquid crystal display device |
| JP4785229B2 (en) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| US6624856B2 (en) * | 2000-07-07 | 2003-09-23 | Casio Computer Co., Ltd. | Liquid crystal display device having thin film transistors for reducing leak current |
| JP2007094433A (en) * | 2000-11-30 | 2007-04-12 | Nec Lcd Technologies Ltd | Active matrix liquid crystal display device and switching element |
| JP3914753B2 (en) * | 2000-11-30 | 2007-05-16 | Ｎｅｃ液晶テクノロジー株式会社 | Active matrix liquid crystal display device and switching element |
| US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR100379684B1 (en) * | 2001-04-20 | 2003-04-10 | 엘지.필립스 엘시디 주식회사 | Manufacturing method for tft lcd |
| KR100795344B1 (en) | 2001-05-29 | 2008-01-17 | 엘지.필립스 엘시디 주식회사 | Array substrate for liquid crystal display device and manufacturing method thereof |
| KR100491821B1 (en) * | 2002-05-23 | 2005-05-27 | 엘지.필립스 엘시디 주식회사 | An array substrate for LCD and method of fabricating of the same |
| KR100497569B1 (en) * | 2002-10-04 | 2005-06-28 | 엘지.필립스 엘시디 주식회사 | An array substrate for In-Plane switching mode LCD |
| KR100980015B1 (en) * | 2003-08-19 | 2010-09-03 | 삼성전자주식회사 | Thin film transistor array panel and manufacturing method thereof |
| JP4593094B2 (en) * | 2003-08-21 | 2010-12-08 | 日本電気株式会社 | Liquid crystal display device and manufacturing method thereof |
| TWI225182B (en) * | 2003-10-27 | 2004-12-11 | Au Optronics Corp | Flat panel display device with a structure to prevent an electrode line from opening |
| JP5152448B2 (en) * | 2004-09-21 | 2013-02-27 | カシオ計算機株式会社 | Pixel drive circuit and image display device |
| JP4640026B2 (en) * | 2005-08-03 | 2011-03-02 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| KR20070019457A (en) * | 2005-08-12 | 2007-02-15 | 삼성전자주식회사 | Thin film transistor array panel and liquid crystal display including the same |
| US7876400B2 (en) | 2005-10-31 | 2011-01-25 | Hewlett-Packard Development Company, L.P. | Optical modulation system |
| US20070097291A1 (en) * | 2005-10-31 | 2007-05-03 | Hewlett-Packard Development Company, Lp | Polymer dispersed liquid crystal |
| US7612859B2 (en) | 2005-10-31 | 2009-11-03 | Hewlett-Packard Development Company, L.P. | Ultra-violet radiation absorbing grid |
| TWI293802B (en) * | 2006-03-28 | 2008-02-21 | Au Optronics Corp | Liquid crystal display device |
| KR101381251B1 (en) * | 2007-06-14 | 2014-04-04 | 삼성디스플레이 주식회사 | Thin film transistor and display panel having the same |
| EP2421030B1 (en) | 2008-09-19 | 2020-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101570347B1 (en) | 2008-11-25 | 2015-11-20 | 삼성디스플레이 주식회사 | film transistor array panel and manufacturing Method thereof |
| WO2011104791A1 (en) * | 2010-02-25 | 2011-09-01 | シャープ株式会社 | Thin film transistor substrate, manufacturing method therefor, and display device |
| US8749727B2 (en) * | 2010-02-26 | 2014-06-10 | Sharp Kabushiki Kaisha | Liquid crystal display device |
| US8988624B2 (en) * | 2011-06-23 | 2015-03-24 | Apple Inc. | Display pixel having oxide thin-film transistor (TFT) with reduced loading |
| CN103926724B (en) * | 2013-06-24 | 2018-03-30 | 上海天马微电子有限公司 | TFT-driven display device |
| WO2018150962A1 (en) * | 2017-02-15 | 2018-08-23 | シャープ株式会社 | Active matrix substrate |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107287A (en) * | 1980-01-31 | 1981-08-26 | Tokyo Shibaura Electric Co | Image display unit |
| JPS60189265A (en) * | 1984-03-08 | 1985-09-26 | Matsushita Electric Ind Co Ltd | Thin film field effect semiconductor device |
| JPH0758793B2 (en) * | 1984-12-19 | 1995-06-21 | 松下電器産業株式会社 | Method of manufacturing thin film transistor |
| JPS62120076A (en) * | 1985-11-20 | 1987-06-01 | Fujitsu Ltd | Thin film transistor |
| JPS62226668A (en) * | 1986-03-27 | 1987-10-05 | Sharp Corp | Thin film transistor |
| JPS62171160A (en) * | 1986-01-22 | 1987-07-28 | Sharp Corp | thin film transistor |
| JPS62226688A (en) * | 1986-03-27 | 1987-10-05 | 神東塗料株式会社 | Conductive paste compound for bridging |
| JP2667173B2 (en) * | 1987-08-31 | 1997-10-27 | 松下電器産業株式会社 | Semiconductor device |
| JPH0748563B2 (en) * | 1988-08-01 | 1995-05-24 | シャープ株式会社 | Thin film transistor device |
| JPH0488641A (en) * | 1990-07-31 | 1992-03-23 | Toshiba Corp | Manufacturing method of thin film transistor |
| JPH05275698A (en) * | 1992-03-27 | 1993-10-22 | Sony Corp | Thin film transistor |
| JP2635885B2 (en) * | 1992-06-09 | 1997-07-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Thin film transistor and active matrix liquid crystal display |
| US5473168A (en) * | 1993-04-30 | 1995-12-05 | Sharp Kabushiki Kaisha | Thin film transistor |
-
1994
- 1994-04-20 JP JP08181594A patent/JP3512849B2/en not_active Expired - Fee Related
- 1994-04-21 DE DE69432991T patent/DE69432991T2/en not_active Expired - Lifetime
- 1994-04-21 WO PCT/JP1994/000658 patent/WO1994025990A1/en active IP Right Grant
- 1994-04-21 EP EP94913790A patent/EP0647971B1/en not_active Expired - Lifetime
- 1994-04-21 DE DE69419472T patent/DE69419472T2/en not_active Expired - Lifetime
- 1994-04-21 US US08/360,743 patent/US5563432A/en not_active Expired - Lifetime
- 1994-04-21 EP EP97115043A patent/EP0813251B1/en not_active Expired - Lifetime
- 1994-04-23 KR KR1019940008817A patent/KR0156766B1/en not_active Expired - Lifetime
- 1994-05-03 TW TW083104499A patent/TW313632B/zh not_active IP Right Cessation
-
1996
- 1996-07-03 US US08/674,866 patent/US5811846A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0813251A3 (en) | 1998-01-14 |
| WO1994025990A1 (en) | 1994-11-10 |
| US5563432A (en) | 1996-10-08 |
| JP3512849B2 (en) | 2004-03-31 |
| US5811846A (en) | 1998-09-22 |
| TW313632B (en) | 1997-08-21 |
| KR0156766B1 (en) | 1998-11-16 |
| EP0647971B1 (en) | 1999-07-14 |
| JPH0794753A (en) | 1995-04-07 |
| DE69419472T2 (en) | 2000-02-03 |
| EP0647971A1 (en) | 1995-04-12 |
| EP0813251A2 (en) | 1997-12-17 |
| EP0647971A4 (en) | 1995-05-03 |
| EP0813251B1 (en) | 2003-07-30 |
| DE69432991T2 (en) | 2004-04-15 |
| DE69432991D1 (en) | 2003-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| R082 | Change of representative |
Ref document number: 647971 Country of ref document: EP Representative=s name: HENKEL, BREUER & PARTNER, 80333 MUENCHEN, DE |
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| R082 | Change of representative |
Ref document number: 647971 Country of ref document: EP Representative=s name: HENKEL, BREUER & PARTNER, DE |