[go: up one dir, main page]

DE69419451D1 - Farbanzeige / Farbdetektor - Google Patents

Farbanzeige / Farbdetektor

Info

Publication number
DE69419451D1
DE69419451D1 DE69419451T DE69419451T DE69419451D1 DE 69419451 D1 DE69419451 D1 DE 69419451D1 DE 69419451 T DE69419451 T DE 69419451T DE 69419451 T DE69419451 T DE 69419451T DE 69419451 D1 DE69419451 D1 DE 69419451D1
Authority
DE
Germany
Prior art keywords
color
detector
display
color display
color detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69419451T
Other languages
English (en)
Other versions
DE69419451T2 (de
Inventor
Robert George Watling Brown
Stephen Peter Najda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69419451D1 publication Critical patent/DE69419451D1/de
Application granted granted Critical
Publication of DE69419451T2 publication Critical patent/DE69419451T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Lasers (AREA)
DE69419451T 1993-04-22 1994-04-21 Farbanzeige / Farbdetektor Expired - Fee Related DE69419451T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9308300A GB2277405A (en) 1993-04-22 1993-04-22 Semiconductor colour display or detector array

Publications (2)

Publication Number Publication Date
DE69419451D1 true DE69419451D1 (de) 1999-08-19
DE69419451T2 DE69419451T2 (de) 1999-12-09

Family

ID=10734260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69419451T Expired - Fee Related DE69419451T2 (de) 1993-04-22 1994-04-21 Farbanzeige / Farbdetektor

Country Status (5)

Country Link
US (1) US5583351A (de)
EP (1) EP0621646B1 (de)
JP (1) JPH077223A (de)
DE (1) DE69419451T2 (de)
GB (1) GB2277405A (de)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856018A (ja) * 1994-08-11 1996-02-27 Rohm Co Ltd 半導体発光素子、および半導体発光素子の製造方法
US6218677B1 (en) * 1994-08-15 2001-04-17 Texas Instruments Incorporated III-V nitride resonant tunneling
FR2726126A1 (fr) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp Procede de fabrication de dispositifs a diodes electroluminescentes a lumiere visible
JP3680337B2 (ja) * 1995-02-14 2005-08-10 昭和電工株式会社 発光ダイオード
US5707139A (en) * 1995-11-01 1998-01-13 Hewlett-Packard Company Vertical cavity surface emitting laser arrays for illumination
US7385574B1 (en) 1995-12-29 2008-06-10 Cree, Inc. True color flat panel display module
JP3814880B2 (ja) * 1996-08-05 2006-08-30 富士ゼロックス株式会社 半導体装置およびその製造方法
JP4097232B2 (ja) 1996-09-05 2008-06-11 株式会社リコー 半導体レーザ素子
US6072196A (en) * 1996-09-05 2000-06-06 Ricoh Company, Ltd. semiconductor light emitting devices
US5976957A (en) * 1996-10-28 1999-11-02 Sony Corporation Method of making silicon quantum wires on a substrate
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
JPH10319871A (ja) * 1997-05-19 1998-12-04 Kouha:Kk Ｌｅｄディスプレイ装置
AU9295098A (en) * 1997-08-29 1999-03-16 Cree Research, Inc. Robust group iii light emitting diode for high reliability in standard packagingapplications
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
CN1115572C (zh) * 1998-02-18 2003-07-23 精工爱普生株式会社 分布反射型多层膜镜的制造方法
US6888175B1 (en) 1998-05-29 2005-05-03 Massachusetts Institute Of Technology Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers
WO2000007221A2 (en) * 1998-07-31 2000-02-10 Emory University Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
US6120909A (en) * 1998-08-19 2000-09-19 International Business Machines Corporation Monolithic silicon-based nitride display device
US6958865B1 (en) * 1998-11-12 2005-10-25 California Institute Of Technology Microlicensing particles and applications
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US6975660B2 (en) * 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US6603784B1 (en) 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells
US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US20030219917A1 (en) 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
US6176925B1 (en) * 1999-05-07 2001-01-23 Cbl Technologies, Inc. Detached and inverted epitaxial regrowth & methods
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
DE19943405B4 (de) * 1999-09-10 2007-12-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lateral monolithisch integrierten Lichtemissions-Halbleiterbauelements und Lichtemissions-Halbleiterbauelement
EP1250738A2 (de) 2000-01-13 2002-10-23 Infineon Technologies AG Halbleiterlaserstruktur
JP2001339121A (ja) * 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
US6410940B1 (en) * 2000-06-15 2002-06-25 Kansas State University Research Foundation Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications
US6301055B1 (en) * 2000-08-16 2001-10-09 California Institute Of Technology Solid immersion lens structures and methods for producing solid immersion lens structures
US6498113B1 (en) 2001-06-04 2002-12-24 Cbl Technologies, Inc. Free standing substrates by laser-induced decoherency and regrowth
TW522534B (en) * 2001-09-11 2003-03-01 Hsiu-Hen Chang Light source of full color LED using die bonding and packaging technology
KR100940530B1 (ko) * 2003-01-17 2010-02-10 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
KR100446622B1 (ko) * 2002-01-10 2004-09-04 삼성전자주식회사 실리콘 광소자 및 이를 적용한 발광 디바이스 장치
US6813295B2 (en) * 2002-03-25 2004-11-02 Agilent Technologies, Inc. Asymmetric InGaAsN vertical cavity surface emitting lasers
US6972516B2 (en) * 2002-06-14 2005-12-06 University Of Cincinnati Photopump-enhanced electroluminescent devices
US6858519B2 (en) * 2002-08-14 2005-02-22 Finisar Corporation Atomic hydrogen as a surfactant in production of highly strained InGaAs, InGaAsN, InGaAsNSb, and/or GaAsNSb quantum wells
US20040179566A1 (en) * 2003-03-11 2004-09-16 Aharon El-Bahar Multi-color stacked semiconductor lasers
US7042649B2 (en) * 2003-08-11 2006-05-09 California Institute Of Technology Microfabricated rubber microscope using soft solid immersion lenses
DE10345410A1 (de) * 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Strahlungsdetektor
WO2005088738A1 (en) 2004-03-12 2005-09-22 Showa Denko K.K. Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
KR100611055B1 (ko) * 2004-03-25 2006-08-10 학교법인 포항공과대학교 광양자테 레이저의 다파장 발진특성을 이용한 저전력디스플레이 소자
CN1938864B (zh) * 2004-03-31 2011-03-23 奥斯兰姆奥普托半导体有限责任公司 辐射探测器
WO2005121864A2 (en) 2004-06-07 2005-12-22 Fluidigm Corporation Optical lens system and method for microfluidic devices
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CA2581614A1 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
KR100612875B1 (ko) * 2004-11-24 2006-08-14 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
KR20060059327A (ko) * 2004-11-27 2006-06-01 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
KR101320836B1 (ko) * 2005-01-26 2013-10-22 필립스-유니버시태트 마르부르크 Ⅲ/ⅴ 반도체
KR100672994B1 (ko) * 2005-01-28 2007-01-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
DE102005043918B4 (de) * 2005-05-30 2014-12-04 Osram Opto Semiconductors Gmbh Detektoranordnung und Verfahren zur Bestimmung spektraler Anteile in einer auf eine Detektoranordnung einfallenden Strahlung
TWI344314B (en) * 2005-10-14 2011-06-21 Hon Hai Prec Ind Co Ltd Light-emitting element, plane light source and direct-type backlight module
CN100485979C (zh) * 2005-10-17 2009-05-06 鸿富锦精密工业（深圳）有限公司 发光元件、平面光源及直下式背光模组
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7899093B1 (en) 2007-05-24 2011-03-01 University Of Central Florida Research Foundation, Inc. Combination of up-converting materials with semiconductor light sources
US8866007B2 (en) * 2006-06-07 2014-10-21 California Institute Of Technology Plasmonic photovoltaics
US7875370B2 (en) 2006-08-18 2011-01-25 United Technologies Corporation Thermal barrier coating with a plasma spray top layer
WO2008039912A2 (en) * 2006-09-27 2008-04-03 Evident Technologies Retro-emission systems comprising microlens arrays and luminescent emitters
JP2010510548A (ja) * 2006-11-21 2010-04-02 ワンチップ フォトニクス インコーポレイテッド 多導波路鉛直方向積層による波長（逆）多重化用集積化光学素子配列
DE102007012115A1 (de) 2006-11-30 2008-06-05 Osram Opto Semiconductors Gmbh Strahlungsdetektor
EP1931158B1 (de) * 2006-12-08 2013-04-10 Samsung Electronics Co., Ltd. Vorrichtung und Verfahren zur Auswahl der Rahmenstruktur in einem Kommunikationssystem mit drahtlosem Multihop-Relaisbreitbandzugang
EP2111641B1 (de) * 2007-01-22 2017-08-30 Cree, Inc. Beleuchtungsvorrichtungen mit extern mit einander verbundenen arrays aus lichtemittierenden vorrichtungen sowie verfahren zu ihrer herstellung
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US7687812B2 (en) * 2007-06-15 2010-03-30 Tpo Displays Corp. Light-emitting diode arrays and methods of manufacture
US7623560B2 (en) * 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
JP2009081379A (ja) 2007-09-27 2009-04-16 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2010225870A (ja) * 2009-03-24 2010-10-07 Toshiba Corp 半導体素子
US8900897B2 (en) 2013-01-10 2014-12-02 Intermolecular, Inc. Material with tunable index of refraction
JP6136002B2 (ja) * 2013-04-12 2017-05-31 パナソニックＩｐマネジメント株式会社 照明装置
WO2016195695A1 (en) * 2015-06-04 2016-12-08 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsels with spatially varying gain peak and fabry perot wavelength
WO2018102961A1 (en) * 2016-12-05 2018-06-14 Goertek.Inc Micro laser diode transfer method and manufacturing method
CN109923468A (zh) * 2016-12-05 2019-06-21 歌尔股份有限公司 微激光二极管显示装置和电子设备
US11637409B2 (en) * 2017-03-27 2023-04-25 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor
US11646546B2 (en) 2017-03-27 2023-05-09 Hamamatsu Photonics K.K. Semiconductor light emitting array with phase modulation regions for generating beam projection patterns
JP6984168B2 (ja) * 2017-05-17 2021-12-17 セイコーエプソン株式会社 撮像装置および内視鏡
JP6959042B2 (ja) 2017-06-15 2021-11-02 浜松ホトニクス株式会社 発光装置
DE102017114369A1 (de) 2017-06-28 2019-01-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
WO2019010173A1 (en) 2017-07-07 2019-01-10 Skyworks Solutions, Inc. SUBSTITUTED ALUMINUM NITRIDE FOR ENHANCED ACOUSTIC WAVE FILTERS
CN111448725B (zh) 2017-12-08 2023-03-31 浜松光子学株式会社 发光装置及其制造方法
DE112019002892T5 (de) 2018-06-08 2021-02-25 Hamamatsu Photonics K.K. Lichtemittierendes Element
JP2021141580A (ja) 2020-02-28 2021-09-16 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. バルク弾性波フィルタのための窒化アルミニウムドーパントスキーム
US11870215B2 (en) * 2020-03-23 2024-01-09 Lumentum Operations Llc Reconfigurable laser pulse generating circuit
US11990729B2 (en) * 2020-03-23 2024-05-21 Lumentum Operations Llc Shaping pulses using a multi-section optical load
CN111429814B (zh) * 2020-04-15 2021-12-28 苏州亮芯光电科技有限公司 多功能智慧显示屏及其控制方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683240A (en) * 1971-07-22 1972-08-08 Rca Corp ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN
US3890170A (en) * 1972-02-29 1975-06-17 Motorola Inc Method of making a multicolor light display by graded mesaing
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
JPS60143668A (ja) * 1983-12-29 1985-07-29 Res Dev Corp Of Japan カラ−用イメ−ジセンサ
JP2809692B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体発光素子およびその製造方法
GB2250635B (en) * 1990-11-26 1994-09-28 Sharp Kk Electroluminescent device of compound semiconductor and process for fabricating the same
US5173751A (en) * 1991-01-21 1992-12-22 Pioneer Electronic Corporation Semiconductor light emitting device
US5138416A (en) * 1991-07-12 1992-08-11 Xerox Corporation Multi-color photosensitive element with heterojunctions

Also Published As

Publication number Publication date
EP0621646A2 (de) 1994-10-26
US5583351A (en) 1996-12-10
GB9308300D0 (en) 1993-06-09
EP0621646B1 (de) 1999-07-14
JPH077223A (ja) 1995-01-10
DE69419451T2 (de) 1999-12-09
EP0621646A3 (en) 1994-11-23
GB2277405A (en) 1994-10-26

Similar Documents

Publication Publication Date Title
DE69419451D1 (de) Farbanzeige / Farbdetektor
DE69421832D1 (de) Farbanzeigevorrichtung
DE69422093D1 (de) Farbanzeigegerät
DE69319658D1 (de) Farbanzeigesystem
DE69534667D1 (de) Farbanzeigevorrichtung
DE69316010D1 (de) Anzeige
BR9407471A (pt) Mostrador de mercadorias
FI935495L (fi) Näyttöjärjestely
DE69417544D1 (de) Untertitelstatusanzeige
DE69414991D1 (de) Bildwiedergabesystem
DE69430647D1 (de) Bilddarstellung
DE59405869D1 (de) Anzeigevorrichtung
DE69414824D1 (de) Anzeigevorrichtung
DE69429242D1 (de) Anzeigevorrichtung
DE69333404D1 (de) Farbbildanzeigevorrichtung
DK0613112T3 (da) Displayholder
DE69617508D1 (de) Farbanzeigevorrichtung
DE69406280D1 (de) Platzobjekt anzeigesystem
DE69412884D1 (de) Anzeigevorrichtung
DE69431021D1 (de) Anzeigegerät
DE69332379D1 (de) Tintenwiedergabe
DE69210312D1 (de) Anzeigeeinheit
DE69412577D1 (de) Anzeigevorrichtung
DK0650651T3 (da) Farvedisplayindretning
DE69406587D1 (de) Anzeigesystem

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee