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DE69410136D1 - Elektronisches Bauteil mit reduzierter Alphateilchen-Softerror-Rate - Google Patents

Elektronisches Bauteil mit reduzierter Alphateilchen-Softerror-Rate

Info

Publication number
DE69410136D1
DE69410136D1 DE69410136T DE69410136T DE69410136D1 DE 69410136 D1 DE69410136 D1 DE 69410136D1 DE 69410136 T DE69410136 T DE 69410136T DE 69410136 T DE69410136 T DE 69410136T DE 69410136 D1 DE69410136 D1 DE 69410136D1
Authority
DE
Germany
Prior art keywords
terror
rate
electronic component
alpha particle
reduced alpha
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69410136T
Other languages
English (en)
Other versions
DE69410136T2 (de
Inventor
Robert C Baumann
Timothy Z C O Cornell Hossain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69410136D1 publication Critical patent/DE69410136D1/de
Application granted granted Critical
Publication of DE69410136T2 publication Critical patent/DE69410136T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/921—Radiation hardened semiconductor device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/953—Making radiation resistant device

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69410136T 1993-02-16 1994-02-16 Elektronisches Bauteil mit reduzierter Alphateilchen-Softerror-Rate Expired - Fee Related DE69410136T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/017,543 US5395783A (en) 1993-02-16 1993-02-16 Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10

Publications (2)

Publication Number Publication Date
DE69410136D1 true DE69410136D1 (de) 1998-06-18
DE69410136T2 DE69410136T2 (de) 1998-09-17

Family

ID=21783182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69410136T Expired - Fee Related DE69410136T2 (de) 1993-02-16 1994-02-16 Elektronisches Bauteil mit reduzierter Alphateilchen-Softerror-Rate

Country Status (5)

Country Link
US (2) US5395783A (de)
EP (1) EP0612106B1 (de)
JP (1) JPH0774269A (de)
KR (1) KR100325966B1 (de)
DE (1) DE69410136T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846139A (ja) * 1994-05-06 1996-02-16 Texas Instr Inc <Ti> ポリシリコン抵抗器とその作成法
WO1997028561A1 (en) * 1996-02-02 1997-08-07 Micron Technology, Inc. Reducing fixed charge in semiconductor device layers
US5913131A (en) * 1996-11-14 1999-06-15 Advanced Micro Devices, Inc. Alternative process for BPTEOS/BPSG layer formation
US5805494A (en) * 1997-04-30 1998-09-08 International Business Machines Corporation Trench capacitor structures
US7932213B2 (en) * 1999-05-11 2011-04-26 President And Fellows Of Harvard College Small molecule printing
US6824987B1 (en) * 1999-05-11 2004-11-30 President And Fellows Of Harvard College Small molecule printing
US6436737B1 (en) * 2000-06-29 2002-08-20 Sun Microsystems, Inc. Method for reducing soft error rates in semiconductor devices
JP2002270887A (ja) * 2001-03-13 2002-09-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2003060087A (ja) * 2001-08-10 2003-02-28 Mitsubishi Electric Corp 半導体記憶装置
WO2003044837A2 (en) * 2001-11-19 2003-05-30 Applied Materials, Inc. Ion imlantation method and apparatus
US20040187050A1 (en) * 2003-03-19 2004-09-23 Baumann Robert Christopher Test structure and method for accurate determination of soft error of logic components
US6914447B2 (en) * 2003-04-23 2005-07-05 Texas Instruments Incorporated High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments
US6930488B1 (en) * 2003-12-17 2005-08-16 Sun Microsystems, Inc. Method and apparatus for accelerated SER testing of circuitry
AU2007277445A1 (en) * 2006-01-03 2008-01-31 Dana-Farber Cancer Institute Small molecule printing
US7700202B2 (en) * 2006-02-16 2010-04-20 Alliant Techsystems Inc. Precursor formulation of a silicon carbide material
US7939823B2 (en) * 2007-09-10 2011-05-10 International Business Machines Corporation Method and structures for accelerated soft-error testing
TWI386983B (zh) 2010-02-26 2013-02-21 Advanced Tech Materials 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8633109B2 (en) * 2010-08-04 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Soft error rate (SER) reduction in advanced silicon processes
US8946874B2 (en) 2011-01-25 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. IC in-process solution to reduce thermal neutrons soft error rate
KR101333914B1 (ko) * 2011-02-22 2013-11-27 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 진보된 실리콘 프로세스로 감소된 소프트 에러 레이트（ｓｅｒ）를 갖는 반도체 디바이스를 제조하는 방법 및 그러한 반도체 디바이스
US8953365B2 (en) 2013-06-07 2015-02-10 International Business Machines Corporation Capacitor backup for SRAM
US9570271B2 (en) 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US9708689B2 (en) 2015-04-08 2017-07-18 Honeywell International Inc. Isotope displacement refining process for producing low alpha materials
WO2020226900A2 (en) 2019-04-23 2020-11-12 Cerium Laboratories Llc Radiation detection systems and methods
US20230275585A1 (en) * 2020-06-04 2023-08-31 Cerium Laboratories Llc System and method for forming radiation hardened circuitry
EP4334755A4 (de) 2021-05-03 2025-04-30 Cerium Laboratories LLC Strahlungsdetektionssysteme und -verfahren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120533A (ja) * 1982-01-06 1983-07-18 Toshiba Corp 光通信用ガラスフアイバ
JPS60183768A (ja) * 1984-03-02 1985-09-19 Hitachi Ltd 耐放射線強化半導体素子
CN1012310B (zh) * 1985-05-01 1991-04-03 得克萨斯仪器公司 超大规模集成电路的局部互连方法及其结构
JPS6260256A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 半導体記憶装置及びその製造方法
US4892840A (en) * 1986-03-27 1990-01-09 Texas Instruments Incorporated EPROM with increased floating gate/control gate coupling
JPS62281358A (ja) * 1986-05-29 1987-12-07 Nec Kyushu Ltd 半導体装置
JPS63184360A (ja) * 1987-01-27 1988-07-29 Oki Electric Ind Co Ltd 半導体記憶装置とその製造方法
JPH02114665A (ja) * 1988-10-25 1990-04-26 Nec Corp 耐放射線半導体装置
EP0497541A1 (de) * 1991-01-28 1992-08-05 Kawasaki Steel Corporation Halbleiterbauelement mit einer Bor-Phosphorsilikat-Glasschicht und ihr Herstellungsverfahren
JPH04334015A (ja) * 1991-05-10 1992-11-20 Fuji Electric Co Ltd ダイヤモンド半導体およびその生成方法

Also Published As

Publication number Publication date
KR100325966B1 (ko) 2002-06-20
EP0612106B1 (de) 1998-05-13
KR940020564A (ko) 1994-09-16
DE69410136T2 (de) 1998-09-17
US5523597A (en) 1996-06-04
EP0612106A1 (de) 1994-08-24
JPH0774269A (ja) 1995-03-17
US5395783A (en) 1995-03-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee