[go: up one dir, main page]

DE69326771D1 - Ausgangstufe mit Transistoren von unterschiedlichem Typ - Google Patents

Ausgangstufe mit Transistoren von unterschiedlichem Typ

Info

Publication number
DE69326771D1
DE69326771D1 DE69326771T DE69326771T DE69326771D1 DE 69326771 D1 DE69326771 D1 DE 69326771D1 DE 69326771 T DE69326771 T DE 69326771T DE 69326771 T DE69326771 T DE 69326771T DE 69326771 D1 DE69326771 D1 DE 69326771D1
Authority
DE
Germany
Prior art keywords
transistors
different types
output stage
stage
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69326771T
Other languages
English (en)
Other versions
DE69326771T2 (de
Inventor
Carlo Cini
Fabrizio Stefani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69326771D1 publication Critical patent/DE69326771D1/de
Application granted granted Critical
Publication of DE69326771T2 publication Critical patent/DE69326771T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3008—Bifet SEPP output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30012—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the two SEPP amplifying transistors are Darlington composite transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30051—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the SEPP amplifying transistors are composed of multiple coupled transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69326771T 1993-12-07 1993-12-07 Ausgangstufe mit Transistoren von unterschiedlichem Typ Expired - Fee Related DE69326771T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830492A EP0657995B1 (de) 1993-12-07 1993-12-07 Ausgangstufe mit Transistoren von unterschiedlichem Typ

Publications (2)

Publication Number Publication Date
DE69326771D1 true DE69326771D1 (de) 1999-11-18
DE69326771T2 DE69326771T2 (de) 2000-03-02

Family

ID=8215272

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69326771T Expired - Fee Related DE69326771T2 (de) 1993-12-07 1993-12-07 Ausgangstufe mit Transistoren von unterschiedlichem Typ

Country Status (3)

Country Link
US (1) US6222414B1 (de)
EP (1) EP0657995B1 (de)
DE (1) DE69326771T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69729447D1 (de) * 1997-09-23 2004-07-15 St Microelectronics Srl MOS-Transistorenschaltung mit Transformator/Datenschnittstellenfunktion
DE10236532C1 (de) * 2002-08-09 2003-08-14 Semikron Elektronik Gmbh Schaltungsanordnung zur Ansteuerung von Leistungstransistoren
EP1424771A1 (de) 2002-11-28 2004-06-02 STMicroelectronics S.r.l. Kaskoden-Leistungsverstärker insbesondere für HF-Anwendungen
FR2849536B1 (fr) * 2002-12-27 2007-02-23 St Microelectronics Sa Circuit d'interface de fourniture de tension
KR100672032B1 (ko) 2005-12-22 2007-01-19 삼성전자주식회사 수직형 트랜지스터를 이용한 반도체 회로
US9871029B2 (en) * 2016-05-06 2018-01-16 Analog Devices Global Bus driver / line driver

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4233528A (en) * 1978-10-23 1980-11-11 Northern Telecom Limited Sample-and-hold circuit with current gain
US4546370A (en) 1979-02-15 1985-10-08 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
US4331887A (en) * 1980-06-23 1982-05-25 International Business Machines Corporation Current switch driving circuit arrangements
JPS57162359A (en) 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
US4588960A (en) * 1982-02-01 1986-05-13 University Of Toronto Innovations Foundation Output circuits of class B type electronic amplifiers
KR890004212B1 (en) * 1983-07-08 1989-10-27 Fujitsu Ltd Complementary logic circuit
US4594717A (en) 1984-03-27 1986-06-10 Optical Storage International-U.S. Driver circuit for laser diode
JPS6184112A (ja) * 1984-10-02 1986-04-28 Fujitsu Ltd 論理ゲ−ト回路
IT1213260B (it) 1984-12-18 1989-12-14 Sgs Thomson Microelectronics Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.
JPS61288616A (ja) * 1985-06-17 1986-12-18 Fuji Electric Co Ltd 半導体装置
GB2186117B (en) 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
US4774420A (en) 1986-11-06 1988-09-27 Texas Instruments Incorporated SCR-MOS circuit for driving electroluminescent displays
US4896196A (en) 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
US4855244A (en) 1987-07-02 1989-08-08 Texas Instruments Incorporated Method of making vertical PNP transistor in merged bipolar/CMOS technology
US5117274A (en) 1987-10-06 1992-05-26 Motorola, Inc. Merged complementary bipolar and MOS means and method
IT1226438B (it) * 1988-07-05 1991-01-15 Sgs Thomson Microelectronics Circuito elettronico con dispositivo di protezione da variazioni di tensione della batteria di alimentazione.
US4885484A (en) * 1988-07-05 1989-12-05 Motorola, Inc. Voltage clamped differential to single ended converter circuit
US5119162A (en) 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
JPH02312280A (ja) 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
IT1235843B (it) 1989-06-14 1992-11-03 Sgs Thomson Microelectronics Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.
JPH0370477A (ja) 1989-08-08 1991-03-26 Fuji Electric Co Ltd 絶縁ゲート型半導体装置の駆動電源回路
US5107151A (en) 1989-08-22 1992-04-21 Unique Mobility, Inc. Switching circuit employing electronic devices in series with an inductor to avoid commutation breakdown and extending the current range of switching circuits by using igbt devices in place of mosfets
US4994694A (en) * 1989-08-23 1991-02-19 Tektronix, Inc. Complementary composite PNP transistor
JP2844707B2 (ja) * 1989-08-25 1999-01-06 日本電気株式会社 ドライバー回路
JPH06103745B2 (ja) 1989-10-06 1994-12-14 株式会社東芝 集積回路素子
DE69025045T2 (de) 1989-12-04 1996-05-30 Toshiba Kawasaki Kk Leistungswandler vom Brückentyp mit verbessertem Wirkungsgrad
EP0451423A1 (de) 1990-04-10 1991-10-16 International Business Machines Corporation Vertikale PNP-Transistorstruktur mit isoliertem Kollektor
US5028881A (en) * 1990-05-03 1991-07-02 Motorola, Inc. Highly linear operational transconductance amplifier with low transconductance
US5055716A (en) * 1990-05-15 1991-10-08 Siarc Basic cell for bicmos gate array
US5231563A (en) 1990-09-07 1993-07-27 Itt Corporation Square wave converter having an improved zero voltage switching operation
US5171699A (en) 1990-10-03 1992-12-15 Texas Instruments Incorporated Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication
US5109167A (en) 1990-12-28 1992-04-28 International Business Machines Corp. PNP word line driver
US5248624A (en) 1991-08-23 1993-09-28 Exar Corporation Method of making isolated vertical pnp transistor in a complementary bicmos process with eeprom memory
US5274323A (en) 1991-10-31 1993-12-28 Linear Technology Corporation Control circuit for low dropout regulator
US5315497A (en) 1991-11-07 1994-05-24 Premier Power, Inc. Symmetrical universal AC-AC power conditioner
JPH05268032A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd 半導体集積回路装置
DE69207410T2 (de) 1992-09-18 1996-08-29 Cons Ric Microelettronica Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
US5309039A (en) * 1992-09-29 1994-05-03 Motorola, Inc. Power supply dependent input buffer
US5376833A (en) * 1992-12-11 1994-12-27 Texas Instruments Incorporated Current driver circuit
US5362997A (en) * 1992-12-16 1994-11-08 Aspen Semiconductor Corporation BiCMOS output driver
US5329147A (en) 1993-01-04 1994-07-12 Xerox Corporation High voltage integrated flyback circuit in 2 μm CMOS
US5328859A (en) 1993-01-04 1994-07-12 Xerox Corporation Method of making high voltage PNP bipolar transistor in CMOS

Also Published As

Publication number Publication date
EP0657995A1 (de) 1995-06-14
US6222414B1 (en) 2001-04-24
DE69326771T2 (de) 2000-03-02
EP0657995B1 (de) 1999-10-13

Similar Documents

Publication Publication Date Title
DE69426162D1 (de) Gepulster Stromrichter mit mehreren Ausgangsspannungen
DE69423235D1 (de) Reduzierung von optischem rauschen
DE69530221D1 (de) Anordnungen von optoelektronischen bauelementen und herstellungsverfahren
DE69430060D1 (de) Antikörper von rapamycinen mit offenem ring
DE69428148D1 (de) Farbabänderung von Bildern
DE69423764D1 (de) Eingabe/Ausgabe-Einrichtung
DE69407455D1 (de) Halbleiterlaser
DE69510288D1 (de) Herstellung elektronischer anordnungen mit dünnschicht-transistoren
DE69317213D1 (de) Ausgangspufferschaltungen
DE69411364D1 (de) Halbleiterlaser
DE69420476D1 (de) Verriegelungsgesteuerter Ausgangstreiber
DE68903243D1 (de) Spannungs-stromumsetzer mit mos-transistoren.
FI943200A0 (fi) Foerfarande foer utnyttjande av avfallsvaermeenenergi i kraftverk
DE69221099D1 (de) Mischungen von Dispersionsfarbstoffen
DE69407352D1 (de) Integrierter Schaltkreis mit Störsignal reduzierender Ausgangsstufe
DE59310138D1 (de) Set von ineinander stapelbaren topfartigen Bestandteilen
DE69326771D1 (de) Ausgangstufe mit Transistoren von unterschiedlichem Typ
DE69411312D1 (de) BiCMOS Ausgangstreiberschaltung
DE69228381D1 (de) Faltbare bühne mit mehreren ebenen
DE69603508D1 (de) Solubilisierungsverfahren von bezotriazol mit thiadiazol
DE69207410D1 (de) Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
DE69423920D1 (de) Analog Multiplizierer mit Viertransistorstufen
DE69407374D1 (de) Halbleiterlaser
DE59105845D1 (de) Mischungen von Monoazofarbstoffen.
DE69402115D1 (de) Halbleiterlaser

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee