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DE69319858D1 - Reflexionsmaske und deren Verwendung zur Herstellung von Mikrovorrichtungen - Google Patents

Reflexionsmaske und deren Verwendung zur Herstellung von Mikrovorrichtungen

Info

Publication number
DE69319858D1
DE69319858D1 DE69319858T DE69319858T DE69319858D1 DE 69319858 D1 DE69319858 D1 DE 69319858D1 DE 69319858 T DE69319858 T DE 69319858T DE 69319858 T DE69319858 T DE 69319858T DE 69319858 D1 DE69319858 D1 DE 69319858D1
Authority
DE
Germany
Prior art keywords
manufacture
micro devices
reflection mask
mask
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319858T
Other languages
English (en)
Other versions
DE69319858T2 (de
Inventor
Akira Miyake
Yutaka Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69319858D1 publication Critical patent/DE69319858D1/de
Application granted granted Critical
Publication of DE69319858T2 publication Critical patent/DE69319858T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69319858T 1992-12-01 1993-11-30 Reflexionsmaske und deren Verwendung zur Herstellung von Mikrovorrichtungen Expired - Fee Related DE69319858T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32190892A JP3219502B2 (ja) 1992-12-01 1992-12-01 反射型マスクとその製造方法、並びに露光装置と半導体デバイス製造方法

Publications (2)

Publication Number Publication Date
DE69319858D1 true DE69319858D1 (de) 1998-08-27
DE69319858T2 DE69319858T2 (de) 1998-12-17

Family

ID=18137750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319858T Expired - Fee Related DE69319858T2 (de) 1992-12-01 1993-11-30 Reflexionsmaske und deren Verwendung zur Herstellung von Mikrovorrichtungen

Country Status (4)

Country Link
US (1) US5503950A (de)
EP (1) EP0600708B1 (de)
JP (1) JP3219502B2 (de)
DE (1) DE69319858T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3267471B2 (ja) * 1995-08-02 2002-03-18 キヤノン株式会社 マスク、これを用いた露光装置やデバイス生産方法
KR0147665B1 (ko) * 1995-09-13 1998-10-01 김광호 변형조명방법, 이에 사용되는 반사경 및 그 제조방법
US6038279A (en) * 1995-10-16 2000-03-14 Canon Kabushiki Kaisha X-ray generating device, and exposure apparatus and semiconductor device production method using the X-ray generating device
JP3284045B2 (ja) * 1996-04-30 2002-05-20 キヤノン株式会社 Ｘ線光学装置およびデバイス製造方法
JP3774522B2 (ja) * 1996-12-24 2006-05-17 キヤノン株式会社 回折光学素子及びそれを有する光学機器
US5962174A (en) * 1998-02-13 1999-10-05 Micron Technology, Inc. Multilayer reflective mask
US6356340B1 (en) 1998-11-20 2002-03-12 Advanced Micro Devices, Inc. Piezo programmable reticle for EUV lithography
JP2001057328A (ja) * 1999-08-18 2001-02-27 Nikon Corp 反射マスク、露光装置および集積回路の製造方法
US6596465B1 (en) 1999-10-08 2003-07-22 Motorola, Inc. Method of manufacturing a semiconductor component
US6821682B1 (en) * 2000-09-26 2004-11-23 The Euv Llc Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography
JP2002245947A (ja) 2000-12-15 2002-08-30 Canon Inc 細線を有する基板及びその製造方法及び電子源基板及び画像表示装置
US6645679B1 (en) * 2001-03-12 2003-11-11 Advanced Micro Devices, Inc. Attenuated phase shift mask for use in EUV lithography and a method of making such a mask
US6428939B1 (en) 2001-03-20 2002-08-06 Wisconsin Alumni Research Foundation Enhanced bright peak clear phase shifting mask and method of use
FR2825473B1 (fr) * 2001-06-01 2003-11-14 Xenocs Procede de modification controlee de proprietes reflectives d'un multicouche
US20050094271A1 (en) * 2001-06-01 2005-05-05 Xenocs Hybrid optical component for x ray applications and method associated therewith
US6756158B2 (en) * 2001-06-30 2004-06-29 Intel Corporation Thermal generation of mask pattern
US6830851B2 (en) * 2001-06-30 2004-12-14 Intel Corporation Photolithographic mask fabrication
US7022435B2 (en) * 2002-09-27 2006-04-04 Euv Limited Liability Corporation Method for the manufacture of phase shifting masks for EUV lithography
US6998203B2 (en) * 2003-08-01 2006-02-14 Intel Corporation Proximity correcting lithography mask blanks
KR101050320B1 (ko) 2003-09-17 2011-07-19 칼 짜이스 에스엠테 게엠베하 마스크, 리소그래피 장치와 반도체 구성요소
NL1036305A1 (nl) 2007-12-21 2009-06-23 Asml Netherlands Bv Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system.
KR102101837B1 (ko) 2013-06-11 2020-04-17 삼성전자 주식회사 포토마스크, 포토마스크의 레지스트레이션 에러 보정 방법, 포토마스크를 이용하여 제조된 집적 회로 및 그 제조 방법
CN109196420B (zh) * 2016-06-03 2022-11-15 Asml荷兰有限公司 图案形成装置
JP7286544B2 (ja) 2017-10-17 2023-06-05 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2022109169A1 (en) * 2020-11-20 2022-05-27 Entegris, Inc. Phase-shift reticle for use in photolithography

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0947882B1 (de) * 1986-07-11 2006-03-29 Canon Kabushiki Kaisha Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung
JPH0727198B2 (ja) * 1987-02-18 1995-03-29 キヤノン株式会社 多層膜反射型マスク
DE3856054T2 (de) * 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH01175735A (ja) * 1987-12-29 1989-07-12 Canon Inc 反射型マスク及びその製造方法
US5012500A (en) * 1987-12-29 1991-04-30 Canon Kabushiki Kaisha X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JPH02177532A (ja) * 1988-12-28 1990-07-10 Toshiba Corp 軟ｘ線反射型露光用マスク及びその製造方法
JPH03266842A (ja) * 1990-03-16 1991-11-27 Fujitsu Ltd 反射型ホトリソグラフィ方法、反射型ホトリソグラフィ装置および反射型ホトマスク
JP3153230B2 (ja) * 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JPH0588355A (ja) * 1991-09-25 1993-04-09 Canon Inc 反射型マスク及びそれを用いた露光装置
JPH05134385A (ja) * 1991-11-11 1993-05-28 Nikon Corp 反射マスク

Also Published As

Publication number Publication date
EP0600708A1 (de) 1994-06-08
JPH06177016A (ja) 1994-06-24
EP0600708B1 (de) 1998-07-22
US5503950A (en) 1996-04-02
DE69319858T2 (de) 1998-12-17
JP3219502B2 (ja) 2001-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee