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DE69318455D1 - Festkörperbildaufnahmevorrichtung - Google Patents

Festkörperbildaufnahmevorrichtung

Info

Publication number
DE69318455D1
DE69318455D1 DE69318455T DE69318455T DE69318455D1 DE 69318455 D1 DE69318455 D1 DE 69318455D1 DE 69318455 T DE69318455 T DE 69318455T DE 69318455 T DE69318455 T DE 69318455T DE 69318455 D1 DE69318455 D1 DE 69318455D1
Authority
DE
Germany
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69318455T
Other languages
English (en)
Other versions
DE69318455T2 (de
Inventor
Masahiro Yamashita
Norihiko Kawada
Satoshi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4091420A external-priority patent/JP3010899B2/ja
Priority claimed from JP4098576A external-priority patent/JP3010901B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69318455D1 publication Critical patent/DE69318455D1/de
Publication of DE69318455T2 publication Critical patent/DE69318455T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/715—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame interline transfer [FIT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69318455T 1992-03-18 1993-03-17 Festkörperbildaufnahmevorrichtung Expired - Lifetime DE69318455T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4091420A JP3010899B2 (ja) 1992-03-18 1992-03-18 固体撮像装置及び固体イメージセンサの駆動制御方法
JP4098576A JP3010901B2 (ja) 1992-03-26 1992-03-26 固体撮像装置

Publications (2)

Publication Number Publication Date
DE69318455D1 true DE69318455D1 (de) 1998-06-18
DE69318455T2 DE69318455T2 (de) 1998-10-01

Family

ID=26432854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318455T Expired - Lifetime DE69318455T2 (de) 1992-03-18 1993-03-17 Festkörperbildaufnahmevorrichtung

Country Status (4)

Country Link
US (2) US5438365A (de)
EP (1) EP0561633B1 (de)
KR (1) KR100281788B1 (de)
DE (1) DE69318455T2 (de)

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JPH08331461A (ja) * 1995-06-02 1996-12-13 Sony Corp 固体撮像装置の駆動方法
JP3838665B2 (ja) * 1995-08-11 2006-10-25 株式会社 東芝 Ｍｏｓ型固体撮像装置
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JPH10243296A (ja) 1997-02-26 1998-09-11 Nikon Corp 撮像装置、および撮像装置の駆動方法
JP3887878B2 (ja) * 1997-06-03 2007-02-28 ソニー株式会社 固体撮像素子の暗信号レベル測定方法及び測定装置
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US6593705B1 (en) 2000-01-07 2003-07-15 Cyberoptics Corporation Rapid-firing flashlamp discharge circuit
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WO2002003675A2 (en) * 2000-07-05 2002-01-10 Vision - Sciences Inc. Dynamic range compression method
EP1324599A4 (de) * 2000-10-03 2006-07-19 Sony Corp Abbildungseinrichtung und abbildungsverfahren
WO2002043366A2 (en) * 2000-11-27 2002-05-30 Vision Sciences Inc. Programmable resolution cmos image sensor
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JP3645502B2 (ja) * 2001-06-29 2005-05-11 株式会社東芝 撮像装置及び映像信号処理方法
US7002629B2 (en) * 2001-08-23 2006-02-21 Goodrich Corporation CCD image detector and method of operating a CCD as an image detector
US20030076431A1 (en) * 2001-10-24 2003-04-24 Krymski Alexander I. Image sensor with pixels having multiple capacitive storage elements
WO2003105462A1 (en) * 2002-06-07 2003-12-18 Thomson Licensing S.A. Multi-format camera head
KR100461010B1 (ko) * 2002-11-18 2004-12-09 삼성전자주식회사 고화질 ｃｃｄ카메라 및 그 제어방법
US7394493B2 (en) * 2002-11-18 2008-07-01 Samsung Electronics Co., Ltd. CCD camera utilizing an IRIS and method for controlling the same
JP2005050951A (ja) * 2003-07-31 2005-02-24 Toshiba Corp 固体撮像装置および電荷転送装置
KR100493900B1 (ko) * 2003-08-21 2005-06-10 삼성전자주식회사 사용자간 콘텐츠에 대한 권한정보의 공유방법
CN101057493B (zh) * 2004-11-02 2011-05-25 松下电器产业株式会社 图像传感器
JP4714502B2 (ja) * 2005-04-26 2011-06-29 パナソニック株式会社 固体撮像装置
US7508436B2 (en) * 2005-06-29 2009-03-24 Eastman Kodak Company Method for capturing a sequence of images in close succession
KR100766074B1 (ko) * 2006-01-27 2007-10-11 삼성전자주식회사 주사변환이 가능한 감시카메라 및 주사변환방법
JP2007318724A (ja) * 2006-04-25 2007-12-06 Matsushita Electric Ind Co Ltd 固体撮像装置の駆動方法、及び固体撮像装置
US7940320B2 (en) * 2006-11-01 2011-05-10 Canon Kabushiki Kaisha Image sensing apparatus and control method therefor having a field based varying horizontal cycle
WO2008086016A1 (en) * 2007-01-10 2008-07-17 Cyberoptics Corporation Inspection system
US8081235B2 (en) * 2007-11-12 2011-12-20 Canon Kabushiki Kaisha Image pickup apparatus and flicker detection method therefor
US8059280B2 (en) 2008-01-31 2011-11-15 Cyberoptics Corporation Method for three-dimensional imaging using multi-phase structured light
KR100942803B1 (ko) * 2008-03-10 2010-02-18 엘지전자 주식회사 카메라의 저조도 보정 장치 및 방법
JP2010279016A (ja) * 2009-04-30 2010-12-09 Sony Corp 固体撮像素子とその駆動方法および撮像装置
GB2474014B (en) * 2009-09-24 2015-04-15 Selex Es Ltd IR detection system and method
US8194164B2 (en) * 2009-09-30 2012-06-05 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8194166B2 (en) 2009-09-30 2012-06-05 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8194165B2 (en) * 2009-09-30 2012-06-05 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8294803B2 (en) * 2009-09-30 2012-10-23 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US20110074997A1 (en) * 2009-09-30 2011-03-31 Border John N Methods for capturing and reading out images from an image sensor
US8314873B2 (en) * 2009-09-30 2012-11-20 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8279316B2 (en) * 2009-09-30 2012-10-02 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8279317B2 (en) * 2009-09-30 2012-10-02 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US10126252B2 (en) 2013-04-29 2018-11-13 Cyberoptics Corporation Enhanced illumination control for three-dimensional imaging
JP6304983B2 (ja) * 2013-09-17 2018-04-04 キヤノン株式会社 焦点検出装置、光電変換システム、焦点検出装置の駆動方法
WO2016009943A1 (ja) * 2014-07-15 2016-01-21 ブリルニクスジャパン株式会社 固体撮像装置、固体撮像装置の製造方法、および電子機器

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Also Published As

Publication number Publication date
KR930020963A (ko) 1993-10-20
EP0561633B1 (de) 1998-05-13
DE69318455T2 (de) 1998-10-01
KR100281788B1 (ko) 2001-02-15
EP0561633A3 (en) 1993-11-24
EP0561633A2 (de) 1993-09-22
US5438365A (en) 1995-08-01
US5546127A (en) 1996-08-13

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