DE69305928D1 - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number: DE69305928D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; laser; semiconductor
Prior art date: 1992-07-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69305928T

Other languages

German (de)

Other versions

DE69305928T2 (en

Inventor

Akinori Seki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toyota Motor Corp

Original Assignee

Toyota Motor Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-07-20

Filing date

1993-07-19

Publication date

1996-12-19

1993-07-19 Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp

1996-12-19 Application granted granted Critical

1996-12-19 Publication of DE69305928D1 publication Critical patent/DE69305928D1/en

1997-03-27 Publication of DE69305928T2 publication Critical patent/DE69305928T2/en

2013-07-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

DE69305928T 1992-07-20 1993-07-19 Semiconductor laser Expired - Fee Related DE69305928T2 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP21558092		1992-07-20
JP4356021A JPH0690063A (en)	1992-07-20	1992-12-18	Semiconductor laser

Publications (2)

Publication Number	Publication Date
DE69305928D1 true DE69305928D1 (en)	1996-12-19
DE69305928T2 DE69305928T2 (en)	1997-03-27

Family

ID=26520942

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69305928T Expired - Fee Related DE69305928T2 (en)	1992-07-20	1993-07-19	Semiconductor laser

Country Status (4)

Country	Link
US (1)	US5365536A (en)
EP (1)	EP0580104B1 (en)
JP (1)	JPH0690063A (en)
DE (1)	DE69305928T2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2973794B2 (en) *	1993-09-24	1999-11-08	トヨタ自動車株式会社	Semiconductor laser
US5892784A (en) *	1994-10-27	1999-04-06	Hewlett-Packard Company	N-drive p-common surface emitting laser fabricated on n+ substrate
US5892787A (en) *	1994-10-27	1999-04-06	Hewlett-Packard Company	N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
JPH08139412A (en) *	1994-11-07	1996-05-31	Mitsubishi Electric Corp	Semiconductor laser device
JPH0974243A (en) *	1995-09-04	1997-03-18	Mitsubishi Electric Corp	Semiconductor laser
JP3444703B2 (en) *	1995-09-07	2003-09-08	三菱電機株式会社	Semiconductor laser
FR2761537B1 (en) *	1997-04-01	1999-06-11	Thomson Csf	LASER COMPRISING A STACK OF EPITAXIAL LASER DIODES INCLUDED BETWEEN TWO BRAGG MIRRORS
FR2770695B1 (en) *	1997-11-05	2000-03-24	Thomson Csf	TAPE LASER AND MANUFACTURING METHOD
DE19935998B4 (en) *	1999-07-30	2007-10-18	Osram Opto Semiconductors Gmbh	Multiple semiconductor laser structure with narrow wavelength distribution
DE19952712A1 (en) *	1999-11-02	2001-05-10	Osram Opto Semiconductors Gmbh	Laser diode device
DE19954093A1 (en) *	1999-11-10	2001-05-23	Infineon Technologies Ag	Arrangement for high power lasers
US6526082B1 (en) *	2000-06-02	2003-02-25	Lumileds Lighting U.S., Llc	P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
DE10057698A1 (en) *	2000-11-21	2002-06-06	Osram Opto Semiconductors Gmbh	Semiconductor diode lasers stacked on top of each other
US6724013B2 (en) *	2001-12-21	2004-04-20	Xerox Corporation	Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
US6822991B2 (en) *	2002-09-30	2004-11-23	Lumileds Lighting U.S., Llc	Light emitting devices including tunnel junctions
US6847057B1 (en) *	2003-08-01	2005-01-25	Lumileds Lighting U.S., Llc	Semiconductor light emitting devices
DE102004004765A1 (en) *	2004-01-29	2005-09-01	Rwe Space Solar Power Gmbh	Active Zones Semiconductor Structure
US7746911B2 (en) *	2004-06-25	2010-06-29	Finisar Corporation	Geometric optimizations for reducing spontaneous emissions in photodiodes
US7184454B2 (en) *	2004-06-25	2007-02-27	Finisar Corporation	Light emitting device with an integrated monitor photodiode
US7277463B2 (en) *	2004-12-30	2007-10-02	Finisar Corporation	Integrated light emitting device and photodiode with ohmic contact
US20070029555A1 (en) *	2005-08-04	2007-02-08	Lester Steven D	Edge-emitting LED light source
JP4827655B2 (en) *	2006-08-11	2011-11-30	古河電気工業株式会社	Semiconductor light emitting device and manufacturing method thereof
DE102006061532A1 (en) *	2006-09-28	2008-04-03	Osram Opto Semiconductors Gmbh	Edge-emitting semiconductor laser with a plurality of monolithically integrated laser diodes
JP2010129750A (en) *	2008-11-27	2010-06-10	Denso Corp	Semiconductor laser and method of manufacturing the same
JP5293314B2 (en) *	2009-03-19	2013-09-18	株式会社デンソー	Semiconductor laser structure
JP5666815B2 (en) *	2010-03-16	2015-02-12	株式会社デンソー	Semiconductor laser structure
JP5521678B2 (en) *	2010-03-23	2014-06-18	富士通株式会社	Semiconductor optical waveform shaping device
JP5792486B2 (en) *	2011-03-18	2015-10-14	株式会社東芝	Semiconductor light emitting device and optical coupling device
JP7633815B2 (en)	2021-01-29	2025-02-20	浜松ホトニクス株式会社	Semiconductor laser element and laser module

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3514715A (en) *	1967-06-29	1970-05-26	Rca Corp	Multilayer,light-emitting semiconductor device
JPS59167083A (en) *	1983-03-12	1984-09-20	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor laser device
JPS61247084A (en) *	1985-04-24	1986-11-04	Nec Corp	Embedded hetero-structure semiconductor laser
JP2579508B2 (en) *	1987-12-26	1997-02-05	富士通株式会社	Semiconductor device
JPH0271574A (en) *	1988-09-06	1990-03-12	Seiko Epson Corp	Semiconductor laser and its manufacturing method
US5016252A (en) *	1988-09-29	1991-05-14	Sanyo Electric Co., Ltd.	Semiconductor laser device
US5212706A (en) *	1991-12-03	1993-05-18	University Of Connecticut	Laser diode assembly with tunnel junctions and providing multiple beams

1992
- 1992-12-18 JP JP4356021A patent/JPH0690063A/en active Pending
1993
- 1993-07-19 EP EP93111550A patent/EP0580104B1/en not_active Expired - Lifetime
- 1993-07-19 DE DE69305928T patent/DE69305928T2/en not_active Expired - Fee Related
- 1993-07-20 US US08/093,754 patent/US5365536A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0580104B1 (en)	1996-11-13
DE69305928T2 (en)	1997-03-27
US5365536A (en)	1994-11-15
JPH0690063A (en)	1994-03-29
EP0580104A3 (en)	1994-02-09
EP0580104A2 (en)	1994-01-26

Publication	Publication Date	Title
DE69305928D1 (en)	1996-12-19	Semiconductor laser
DE69326136D1 (en)	1999-09-30	Semiconductor laser device
DE69220434D1 (en)	1997-07-24	Semiconductor laser
DE69407455D1 (en)	1998-02-05	Semiconductor laser
DE69320750D1 (en)	1998-10-08	Semiconductor laser module
DE59306825D1 (en)	1997-08-07	Tunable semiconductor laser
DE69312836D1 (en)	1997-09-11	Multiple semiconductor lasers
DE4394393T1 (en)	1994-11-10	Heatsink
DE69411364D1 (en)	1998-08-06	Semiconductor laser
DE69608850D1 (en)	2000-07-20	Semiconductor laser
DE69606812D1 (en)	2000-04-06	Semiconductor laser
DE69304865D1 (en)	1996-10-24	Solid state laser
DE69218802D1 (en)	1997-05-15	Semiconductor laser
DE69212938D1 (en)	1996-09-26	Semiconductor laser
DE69120185D1 (en)	1996-07-18	Semiconductor laser
DE69213386D1 (en)	1996-10-10	Semiconductor laser module
DE69209045D1 (en)	1996-04-18	Semiconductor laser
DE69223737D1 (en)	1998-02-05	Semiconductor laser
DE69301801D1 (en)	1996-04-18	Solid state laser
DE69432345D1 (en)	2003-04-30	Semiconductor diode laser
DE59308771D1 (en)	1998-08-20	Semiconductor laser module
DE69217679D1 (en)	1997-04-10	Semiconductor laser
DE69423196D1 (en)	2000-04-06	Semiconductor laser device
DE69227403D1 (en)	1998-12-03	Semiconductor laser
DE69315303D1 (en)	1998-01-02	Semiconductor laser element

Legal Events

Date	Code	Title	Description
1997-12-11	8364	No opposition during term of opposition
1999-09-09	8339	Ceased/non-payment of the annual fee