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DE69231288D1 - Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschicht - Google Patents

Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschicht

Info

Publication number
DE69231288D1
DE69231288D1 DE69231288T DE69231288T DE69231288D1 DE 69231288 D1 DE69231288 D1 DE 69231288D1 DE 69231288 T DE69231288 T DE 69231288T DE 69231288 T DE69231288 T DE 69231288T DE 69231288 D1 DE69231288 D1 DE 69231288D1
Authority
DE
Germany
Prior art keywords
producing
thin film
compound semiconductor
semiconductor thin
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69231288T
Other languages
English (en)
Other versions
DE69231288T2 (de
Inventor
Shigemi Kohiki
Takayuki Negami
Mikihiko Nishitani
Takahiro Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4136571A external-priority patent/JPH05262504A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69231288D1 publication Critical patent/DE69231288D1/de
Application granted granted Critical
Publication of DE69231288T2 publication Critical patent/DE69231288T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H10F77/1265—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
DE69231288T 1991-09-27 1992-09-25 Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschicht Expired - Lifetime DE69231288T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24902291 1991-09-27
JP4136571A JPH05262504A (ja) 1991-09-27 1992-05-28 化合物半導体、その薄膜製造方法及びそれを用いた半導体装置

Publications (2)

Publication Number Publication Date
DE69231288D1 true DE69231288D1 (de) 2000-08-31
DE69231288T2 DE69231288T2 (de) 2000-11-30

Family

ID=26470107

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231288T Expired - Lifetime DE69231288T2 (de) 1991-09-27 1992-09-25 Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschicht

Country Status (2)

Country Link
EP (1) EP0534459B1 (de)
DE (1) DE69231288T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05262504A (ja) * 1991-09-27 1993-10-12 Matsushita Electric Ind Co Ltd 化合物半導体、その薄膜製造方法及びそれを用いた半導体装置
JP3337255B2 (ja) * 1993-02-15 2002-10-21 松下電器産業株式会社 カルコパイライト構造半導体薄膜とその製造方法、薄膜太陽電池の製造方法、および発光装置の製造方法
US5918111A (en) * 1995-03-15 1999-06-29 Matsushita Electric Industrial Co., Ltd. Method and apparatus for manufacturing chalcopyrite semiconductor thin films
DE19902908B4 (de) * 1999-01-26 2005-12-01 Solarion Gmbh Verfahren zur Herstellung von Chalkogenidschichten durch chemische Umsetzung von Schichten aus Metallen oder Metallverbindungen im niederenergetischen Chalkogen-Ionenstrahl
DE19921514A1 (de) * 1999-05-10 2000-11-30 Ist Inst Fuer Solartechnologie Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter mit Potentialbarriere innerhalb der photoaktiven polykristallinen Absorberschicht und Verfahren zu ihrer Herstellung
EP2058864A1 (de) * 2007-11-06 2009-05-13 Advanced Surface Technology B.V. Solarzelle auf Chaolcogenidbasis und Herstellungsverfahren für eine solche Zelle
CN102471360A (zh) 2009-08-04 2012-05-23 普瑞凯瑟安质提克斯公司 用于caigas含铝光伏装置的聚合前体
CA2768612A1 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Methods for photovoltaic absorbers with controlled stoichiometry
WO2011017236A2 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Polymeric precursors for cis and cigs photovoltaics
US8067262B2 (en) * 2009-08-04 2011-11-29 Precursor Energetics, Inc. Polymeric precursors for CAIGS silver-containing photovoltaics
WO2011084171A1 (en) 2009-12-17 2011-07-14 Precursor Energetics, Inc. Molecular precursors for optoelectronics
KR20130143031A (ko) 2010-09-15 2013-12-30 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 어닐링 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004342A (en) * 1976-02-23 1977-01-25 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of ion implanted P-N junction devices

Also Published As

Publication number Publication date
EP0534459B1 (de) 2000-07-26
EP0534459A2 (de) 1993-03-31
EP0534459A3 (en) 1993-05-05
DE69231288T2 (de) 2000-11-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

R071 Expiry of right

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