[go: up one dir, main page]

DE69229870D1 - Vorrichtung zum einführen von gas, sowie gerät und verfahren zum epitaxialen wachstum. - Google Patents

Vorrichtung zum einführen von gas, sowie gerät und verfahren zum epitaxialen wachstum.

Info

Publication number
DE69229870D1
DE69229870D1 DE69229870T DE69229870T DE69229870D1 DE 69229870 D1 DE69229870 D1 DE 69229870D1 DE 69229870 T DE69229870 T DE 69229870T DE 69229870 T DE69229870 T DE 69229870T DE 69229870 D1 DE69229870 D1 DE 69229870D1
Authority
DE
Germany
Prior art keywords
epitaxial growth
implementing gas
implementing
gas
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229870T
Other languages
English (en)
Other versions
DE69229870T2 (de
Inventor
Shinji Komatsu Electron Maruya
Hiroki Komatsu Electronic Kato
Kazuhiko Kabushiki Kaisha Hino
Masakazu Kabushiki K Kobayashi
Nozomu Kabushiki Kaisha K Ochi
Naoto Kabushiki Kaish Hisanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Komatsu Ltd
Original Assignee
Komatsu Ltd
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd, Komatsu Electronic Metals Co Ltd filed Critical Komatsu Ltd
Publication of DE69229870D1 publication Critical patent/DE69229870D1/de
Application granted granted Critical
Publication of DE69229870T2 publication Critical patent/DE69229870T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
DE69229870T 1991-09-27 1992-09-28 Vorrichtung zum einführen von gas, sowie gerät und verfahren zum epitaxialen wachstum. Expired - Fee Related DE69229870T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24979691 1991-09-27
JP4329392 1992-02-28
PCT/JP1992/001235 WO1993006619A1 (en) 1991-09-27 1992-09-28 Apparatus for introducing gas, and apparatus and method for epitaxial growth

Publications (2)

Publication Number Publication Date
DE69229870D1 true DE69229870D1 (de) 1999-09-30
DE69229870T2 DE69229870T2 (de) 2000-05-04

Family

ID=26383051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229870T Expired - Fee Related DE69229870T2 (de) 1991-09-27 1992-09-28 Vorrichtung zum einführen von gas, sowie gerät und verfahren zum epitaxialen wachstum.

Country Status (4)

Country Link
EP (1) EP0605725B1 (de)
JP (1) JP3057330B2 (de)
DE (1) DE69229870T2 (de)
WO (1) WO1993006619A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW359943B (en) * 1994-07-18 1999-06-01 Silicon Valley Group Thermal Single body injector and method for delivering gases to a surface
US6200389B1 (en) 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
KR100478461B1 (ko) * 1995-08-03 2005-09-05 에이에스엠 아메리카, 인코포레이티드 내부지지체를갖는프로세스챔버
TW429271B (en) * 1997-10-10 2001-04-11 Applied Materials Inc Introducing process fluid over rotating substrates
US7163587B2 (en) * 2002-02-08 2007-01-16 Axcelis Technologies, Inc. Reactor assembly and processing method
JP4838603B2 (ja) * 2006-03-14 2011-12-14 創光科学株式会社 化学的気相成長装置及びガス流路装置
JP6024595B2 (ja) * 2013-05-24 2016-11-16 信越半導体株式会社 ガスフィルターのライフ管理方法
DE102016101003A1 (de) 2016-01-21 2017-07-27 Aixtron Se CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse
USD1028913S1 (en) 2021-06-30 2024-05-28 Asm Ip Holding B.V. Semiconductor deposition reactor ring
WO2023013952A1 (ko) * 2021-08-03 2023-02-09 주성엔지니어링(주) 버퍼탱크 및 버퍼탱크를 포함하는 공급블록과, 가스 공급 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121650A (en) * 1979-03-14 1980-09-18 Pioneer Electronic Corp Cvd device
JPS5678497A (en) * 1979-11-27 1981-06-27 Fujitsu Ltd Vapor growth apparatus
JPS56137639A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Decompression vapor growth device
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
JPH0530351Y2 (de) * 1985-03-26 1993-08-03
JPS62235472A (ja) * 1986-04-04 1987-10-15 Sharp Corp 薄膜半導体の製法
JPH01107519A (ja) * 1987-10-20 1989-04-25 Nec Corp 気相成長装置
JPH03131494A (ja) 1989-10-09 1991-06-05 Daikin Ind Ltd 産業用ロボット制御方法およびその装置
JPH117519A (ja) * 1997-06-17 1999-01-12 Hitachi Denshi Ltd ビデオセンサ装置

Also Published As

Publication number Publication date
EP0605725A4 (en) 1996-03-27
WO1993006619A1 (en) 1993-04-01
EP0605725A1 (de) 1994-07-13
EP0605725B1 (de) 1999-08-25
DE69229870T2 (de) 2000-05-04
JP3057330B2 (ja) 2000-06-26

Similar Documents

Publication Publication Date Title
DE69309922D1 (de) Verfahren und Vorrichtung zum Verstärken, Modulieren und Demodulieren
DE59201072D1 (de) Verfahren und Vorrichtung zum Zünden von CVD-Plasmen.
DE68918049D1 (de) Verfahren und Vorrichtung zur epitaktischen Züchtung.
DE69206103D1 (de) Verfahren und Vorrichtung zum Schneiden von Unterwasserstrukturen.
DE68916616D1 (de) Verfahren und Vorrichtung zum Gruppenlochen.
DE59203570D1 (de) Verfahren und vorrichtung zum stapeln.
DE69100959D1 (de) Verfahren und Vorrichtung zum Sortieren und Bündeln von Blumen.
DE3886023D1 (de) Verfahren und Vorrichtung zum Atomschicht-Epitaxie-Aufwachsen.
DE69424929D1 (de) Verfahren und vorrichtung zum schneiden von stäbformigen nahrungsmitteln
DE69100654D1 (de) Verfahren und Vorrichtung zum Schneiden.
DE68910535D1 (de) Vorrichtung und verfahren zum gefrieren.
DE69203432D1 (de) Vorrichtung und Verfahren zum Transferieren von Gegenständen.
DE69113985D1 (de) Verfahren und Vorrichtung zum Umwickeln von Signaturen und dergleichen.
DE69016818D1 (de) Verfahren und Vorrichtung zum Aufwickeln.
DE69019832D1 (de) Verfahren und vorrichtung zum stechen von ohrlöchern.
DE69229870D1 (de) Vorrichtung zum einführen von gas, sowie gerät und verfahren zum epitaxialen wachstum.
DE69203550D1 (de) Vorrichtung und Verfahren zum Schleifen von Kreismessern.
DE69108113D1 (de) Verfahren und Vorrichtung zum Erzeugen von Dünnschichten.
DE59105668D1 (de) Verfahren und Vorrichtung zum Herstellen von Druckbehältern sowie Druckbehälter.
DE69104707D1 (de) Vorrichtung und Verfahren zum Empfangen von vertraulichen Dokumenten.
DE69103033D1 (de) Verfahren und Vorrichtung zum Schneiden von Rohren.
DE68916280D1 (de) Verfahren und Vorrichtung zum Schneiden von Bögen.
DE3776225D1 (de) Verfahren und vorrichtung zum ziehen von rohren.
DE58900795D1 (de) Verfahren und system zum einstellen des lambda-wertes.
DE59202348D1 (de) Verfahren und Vorrichtung zum Herstellen von Ringen aus einer Aktivhartlot-Legierung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee