[go: up one dir, main page]

DE69229714D1 - Vorrichtung zur chemischen Abscheidung aus der Dampfphase unter Gebrauch von flüssigem Ausgangsmaterial - Google Patents

Vorrichtung zur chemischen Abscheidung aus der Dampfphase unter Gebrauch von flüssigem Ausgangsmaterial

Info

Publication number
DE69229714D1
DE69229714D1 DE69229714T DE69229714T DE69229714D1 DE 69229714 D1 DE69229714 D1 DE 69229714D1 DE 69229714 T DE69229714 T DE 69229714T DE 69229714 T DE69229714 T DE 69229714T DE 69229714 D1 DE69229714 D1 DE 69229714D1
Authority
DE
Germany
Prior art keywords
vapor deposition
starting material
chemical vapor
deposition apparatus
liquid starting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229714T
Other languages
English (en)
Other versions
DE69229714T2 (de
Inventor
Yukihiro Hayakawa
Yasushi Kawasumi
Kenji Makino
Yuzo Kataoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33880092A external-priority patent/JP3155845B2/ja
Priority claimed from JP33880392A external-priority patent/JPH06188202A/ja
Priority claimed from JP33879992A external-priority patent/JP3363498B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69229714D1 publication Critical patent/DE69229714D1/de
Publication of DE69229714T2 publication Critical patent/DE69229714T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69229714T 1991-12-26 1992-12-23 Vorrichtung zur chemischen Abscheidung aus der Dampfphase unter Gebrauch von flüssigem Ausgangsmaterial Expired - Fee Related DE69229714T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP34505791 1991-12-26
JP34506691 1991-12-26
JP33880092A JP3155845B2 (ja) 1992-12-18 1992-12-18 薄膜形成法及び装置
JP33880392A JPH06188202A (ja) 1992-12-18 1992-12-18 Ｃｖｄ装置
JP33879992A JP3363498B2 (ja) 1992-12-18 1992-12-18 液体気化装置

Publications (2)

Publication Number Publication Date
DE69229714D1 true DE69229714D1 (de) 1999-09-09
DE69229714T2 DE69229714T2 (de) 2000-04-27

Family

ID=27531247

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229714T Expired - Fee Related DE69229714T2 (de) 1991-12-26 1992-12-23 Vorrichtung zur chemischen Abscheidung aus der Dampfphase unter Gebrauch von flüssigem Ausgangsmaterial

Country Status (3)

Country Link
US (2) US5447568A (de)
EP (1) EP0548944B1 (de)
DE (1) DE69229714T2 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE205963T1 (de) * 1990-05-31 2001-10-15 Canon Kk Halbleiteranordnung mit verbesserter leitungsführung
US6004885A (en) 1991-12-26 1999-12-21 Canon Kabushiki Kaisha Thin film formation on semiconductor wafer
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
US6047713A (en) * 1994-02-03 2000-04-11 Applied Materials, Inc. Method for cleaning a throttle valve
US5480678A (en) * 1994-11-16 1996-01-02 The B. F. Goodrich Company Apparatus for use with CVI/CVD processes
EP0792384B1 (de) * 1994-11-16 1998-10-28 The B.F. Goodrich Company Vorrichtung zur druckfeld cvd/cvi, verfahren und produkt
FR2727693A1 (fr) * 1994-12-06 1996-06-07 Centre Nat Rech Scient Reacteur pour le depot de couches minces en phase vapeur (cvd)
US5595605A (en) * 1995-10-11 1997-01-21 United Microelectronics Corp. Apparatus for preventing the unstable growth rate of oxide caused by water vapor remaining in the inlet pipes of a horizontal driven field oxidation tube
JP2867946B2 (ja) * 1996-03-13 1999-03-10 日本電気株式会社 気相成長装置
JP3591977B2 (ja) * 1996-03-18 2004-11-24 キヤノン株式会社 マイクロ波プラズマｃｖｄ法を用いた膜堆積方法および膜堆積装置
JP3555717B2 (ja) * 1996-05-09 2004-08-18 シャープ株式会社 半導体製造方法
US5849644A (en) * 1996-08-13 1998-12-15 Micron Technology, Inc. Semiconductor processing methods of chemical vapor depositing SiO2 on a substrate
US20010012700A1 (en) * 1998-12-15 2001-08-09 Klaus F. Schuegraf Semiconductor processing methods of chemical vapor depositing sio2 on a substrate
US5835678A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5835677A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
RU2099440C1 (ru) * 1997-01-24 1997-12-20 Плазма Текнололоджи Лимитед Способ обработки поверхностей и устройство для его осуществления
KR100524204B1 (ko) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
US6358323B1 (en) * 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6217659B1 (en) * 1998-10-16 2001-04-17 Air Products And Chemical, Inc. Dynamic blending gas delivery system and method
US6669988B2 (en) 2001-08-20 2003-12-30 Goodrich Corporation Hardware assembly for CVI/CVD processes
US7476419B2 (en) 1998-10-23 2009-01-13 Goodrich Corporation Method for measurement of weight during a CVI/CVD process
TW582050B (en) 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
US6194030B1 (en) 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
US6984415B2 (en) * 1999-08-20 2006-01-10 International Business Machines Corporation Delivery systems for gases for gases via the sublimation of solid precursors
US6100587A (en) 1999-08-26 2000-08-08 Lucent Technologies Inc. Silicon carbide barrier layers for porous low dielectric constant materials
KR100360494B1 (ko) * 1999-09-21 2002-11-13 삼성전자 주식회사 기화장치
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
US6443435B1 (en) * 2000-10-23 2002-09-03 Applied Materials, Inc. Vaporization of precursors at point of use
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
KR100922241B1 (ko) * 2001-02-09 2009-10-15 도쿄엘렉트론가부시키가이샤 성막 장치 및 샤워헤드 구조체
US20040250763A1 (en) * 2002-01-11 2004-12-16 Ovshinsky Stanford R. Fountain cathode for large area plasma deposition
JP3828821B2 (ja) * 2002-03-13 2006-10-04 株式会社堀場エステック 液体材料気化供給装置
US6790475B2 (en) 2002-04-09 2004-09-14 Wafermasters Inc. Source gas delivery
JP3883918B2 (ja) * 2002-07-15 2007-02-21 日本エー・エス・エム株式会社 枚葉式ｃｖｄ装置及び枚葉式ｃｖｄ装置を用いた薄膜形成方法
KR100509231B1 (ko) * 2003-01-03 2005-08-22 주식회사 아이피에스 박막증착용 반응용기
WO2005007928A1 (en) * 2003-07-22 2005-01-27 Lg Electronics Inc. Plasma surface processing system and supply device for plasma processing solution therefor
US7433511B2 (en) * 2003-10-17 2008-10-07 Hewlett-Packard Development Company, L.P. Color adjustment using black generation and under color removal
FR2868434B1 (fr) * 2004-04-06 2007-04-20 Neyco Sa Procedes de revetement d'un substrat et de formation d'un film colore et dispositif associe
JP4625495B2 (ja) * 2005-03-30 2011-02-02 三益半導体工業株式会社 スピンエッチング方法及び装置
JP4803578B2 (ja) * 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
KR101173645B1 (ko) * 2007-12-31 2012-08-20 (주)에이디에스 가스 분사 유닛 및 이를 구비하는 박막 증착 장치
KR101092586B1 (ko) * 2010-03-15 2011-12-13 정원국 ｎ형 및 ｐ형 도핑을 위한 위성 성장챔버들을 구비한 ＭＯＣＶＤ 장치
US20130118408A1 (en) * 2011-11-10 2013-05-16 Saint-Gobain Ceramics & Plastics, Inc. System for use in the formation of semiconductor crystalline materials
DE102014101410A1 (de) * 2014-02-05 2015-08-06 Endress + Hauser Gmbh + Co. Kg Vorrichtung zur Bestimmung oder Überwachung des Füllstands eines in einemBehälter gelagerten Füllguts
KR101980729B1 (ko) * 2017-05-17 2019-08-29 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
EP3642386B1 (de) * 2017-06-21 2024-04-03 Picosun Oy Vorrichtung und verfahren zur substratverarbeitung
CN109962164A (zh) * 2019-03-26 2019-07-02 暨南大学 一种恒温气体处理装置、包含有三维-二维钙钛矿薄膜的太阳能电池及其制备方法
CN111558358A (zh) * 2020-04-07 2020-08-21 宜昌苏鹏科技有限公司 一种薄膜反应器及其用于烷基蒽醌连续化生产的工艺

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4154192A (en) * 1976-12-10 1979-05-15 Mitsubishi Denki Kabushiki Kaisha Manufacturing apparatus for semiconductor devices
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
US4517220A (en) * 1983-08-15 1985-05-14 Motorola, Inc. Deposition and diffusion source control means and method
US4717596A (en) * 1985-10-30 1988-01-05 International Business Machines Corporation Method for vacuum vapor deposition with improved mass flow control
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
EP0382987A1 (de) * 1989-02-13 1990-08-22 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Gasversorgungsanlage
NL8900980A (nl) * 1989-04-19 1990-11-16 Asm Europ Werkwijze voor het voorzien in een gedoseerde dampstroom alsmede inrichting voor het uitvoeren daarvan.
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
DE69006809T2 (de) * 1989-09-12 1994-09-15 Shinetsu Chemical Co Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen.
DE69026566T2 (de) * 1989-09-26 1996-11-14 Canon Kk Verfahren zur Herstellung von einer abgeschiedenen Metallschicht, die Aluminium als Hauptkomponent enthält, mit Anwendung von Alkalimetallaluminiumhydride
JP2726118B2 (ja) * 1989-09-26 1998-03-11 キヤノン株式会社 堆積膜形成法
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JPH0784662B2 (ja) * 1989-12-12 1995-09-13 アプライドマテリアルズジャパン株式会社 化学的気相成長方法とその装置
US5316796A (en) * 1990-03-09 1994-05-31 Nippon Telegraph And Telephone Corporation Process for growing a thin metallic film
JP2563958Y2 (ja) * 1993-08-30 1998-03-04 本田技研工業株式会社 チェーンガイド装置

Also Published As

Publication number Publication date
EP0548944A1 (de) 1993-06-30
US5447568A (en) 1995-09-05
US5580822A (en) 1996-12-03
EP0548944B1 (de) 1999-08-04
DE69229714T2 (de) 2000-04-27

Similar Documents

Publication Publication Date Title
DE69229714D1 (de) Vorrichtung zur chemischen Abscheidung aus der Dampfphase unter Gebrauch von flüssigem Ausgangsmaterial
DE59207534D1 (de) Vorrichtung zur Verdampfung von Flüssigkeiten
DE69233418D1 (de) Vorrichtung zur diskontinuierlichen Reinigung von Flüssigkeiten
DE69504762D1 (de) Vorrichtung zur chemischen Gasphasenabscheidung
DE69214325D1 (de) Vorrichtung zur Entfernung von Gasblasen aus einer zirkulierenden Flüssigkeit
DE3852785D1 (de) Vorrichtung zur Probenentnahme von Flüssigkeiten aus Bohrungen.
DE58908247D1 (de) Verfahren zur Reinigung von Kakao-Nahrungsfaser-reichem Material.
DE69015247D1 (de) Verfahren zur Wiederherstellung von kontaminiertem Bodenmaterial.
DE69503296D1 (de) Verfahren zur plasmaunterstützten chemischen Abscheidung aus der Dampfphase
DE69102845D1 (de) Vorrichtung zum Anlocken von Motten.
AT369483B (de) Vorrichtung zur befestigung von biegsamen materialien an im abstand voneinander angeordneten, zueinander parallelen haltern
ATE108417T1 (de) Vorrichtung zum imprägnieren von flüssigkeiten mit gas.
DE69332680D1 (de) Verfahren zur Abgabe von leitfähigen Beschichtungsmaterialien
DE69022903D1 (de) Verfahren zur Flüssigkeitstrennung.
DE69429023D1 (de) Vorrichtung zur Herstellung von Stempeln
DE3881044D1 (de) Ueberzuege aus sulfonierten polymerisaten zur gesteuerten naehrstoffabgabe.
DE69422550D1 (de) Verfahren zur plasmaunterstützten chemischen Abscheidung von Schichten aus der Dampfphase unter Verbesserung der Zwischenflächen
DE69205550D1 (de) Vorrichtung zur Ablagerung von Material auf einem Substrat mittels chemischen Niederschlagens aus der Dampfphase.
DE69214950D1 (de) System zur entnahme von flussigkeitsproben
DE69004229D1 (de) Verfahren zur Reinigung von 1,1-Dichlor-1-fluorethan.
DE59100619D1 (de) Vorrichtung zur Entnahme von hochreinen Flüssigkeiten aus Gebinden.
DE69120088D1 (de) Vorrichtung zur feststellung des dampfdruckes von flüssigkeiten
DE69201693D1 (de) Vorrichtung zur Züchtung von Einkristallen.
DE68919346D1 (de) Verfahren zur Gasphasenabscheidung von Polysilanen.
DE59101843D1 (de) Vorrichtung zur laufenden Beschichtung von bandförmigen Substraten.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee