DE69133144D1 - Reaktor zur Behandlung von Wafern - Google Patents

Reaktor zur Behandlung von Wafern

Info

Publication number: DE69133144D1
Authority: DE; Germany
Prior art keywords: treatment reactor; wafer treatment; wafer; reactor; treatment
Prior art date: 1990-08-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69133144T

Other languages

English (en)

Other versions

DE69133144T2 (de

Inventor

Roger N Anderson

Paul R Lindstrom

Wayne Johnson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-08-23

Filing date

1991-08-22

Publication date

2002-12-12

1991-08-22 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2002-12-12 Application granted granted Critical

2002-12-12 Publication of DE69133144D1 publication Critical patent/DE69133144D1/de

2003-07-31 Publication of DE69133144T2 publication Critical patent/DE69133144T2/de

2011-08-23 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

Chemical & Material Sciences (AREA)
Metallurgy (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
General Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Physical Vapour Deposition (AREA)
Electrodes Of Semiconductors (AREA)
Drying Of Semiconductors (AREA)

DE1991633144 1990-08-23 1991-08-22 Reaktor zur Behandlung von Wafern Expired - Fee Related DE69133144T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US57195790A	1990-08-23	1990-08-23

Publications (2)

Publication Number	Publication Date
DE69133144D1 true DE69133144D1 (de)	2002-12-12
DE69133144T2 DE69133144T2 (de)	2003-07-31

Family

ID=24285758

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DE1991616033 Expired - Fee Related DE69116033T2 (de)	1990-08-23	1991-08-22	Reaktor zur Behandlung von Halbleiterscheiben.
DE1991633144 Expired - Fee Related DE69133144T2 (de)	1990-08-23	1991-08-22	Reaktor zur Behandlung von Wafern

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
DE1991616033 Expired - Fee Related DE69116033T2 (de)	1990-08-23	1991-08-22	Reaktor zur Behandlung von Halbleiterscheiben.

Country Status (3)

Country	Link
EP (2)	EP0473067B1 (de)
JP (1)	JP2641351B2 (de)
DE (2)	DE69116033T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5221556A (en) *	1987-06-24	1993-06-22	Epsilon Technology, Inc.	Gas injectors for reaction chambers in CVD systems
JP2790009B2 (ja) *	1992-12-11	1998-08-27	信越半導体株式会社	シリコンエピタキシャル層の成長方法および成長装置
EP0606751B1 (de) *	1993-01-13	2002-03-06	Applied Materials, Inc.	Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung
EP0967633A1 (de) *	1993-07-30	1999-12-29	Applied Materials, Inc.	Gaseinlässe für einen Waferbearbeitungsraum
US6500734B2 (en)	1993-07-30	2002-12-31	Applied Materials, Inc.	Gas inlets for wafer processing chamber
US5551982A (en) *	1994-03-31	1996-09-03	Applied Materials, Inc.	Semiconductor wafer process chamber with susceptor back coating
US6489241B1 (en) *	1999-09-17	2002-12-03	Applied Materials, Inc.	Apparatus and method for surface finishing a silicon film
JP5257424B2 (ja) *	2004-04-27	2013-08-07	株式会社Ｓｕｍｃｏ	エピタキシャル成長装置
JP2008172111A (ja) *	2007-01-15	2008-07-24	Tokyo Electron Ltd	リフロー処理装置およびリフロー処理方法
JP5226082B2 (ja) *	2007-12-20	2013-07-03	アプライドマテリアルズインコーポレイテッド	ガス流分布が改善された熱反応器
KR101525210B1 (ko) *	2013-12-20	2015-06-05	주식회사 유진테크	기판 처리장치
CN110596327B (zh) *	2019-06-25	2022-08-02	北京机械设备研究所	一种污染气体成分及浓度检测方法
CN112281126B (zh) *	2020-10-29	2022-11-25	河南卓金光电科技股份有限公司	一种反应磁控溅射分离式布气法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5613718A (en) *	1979-07-13	1981-02-10	Hitachi Ltd	Device for growing semiconductor at gas phase
US4731255A (en) *	1984-09-26	1988-03-15	Applied Materials Japan, Inc.	Gas-phase growth process and an apparatus for the same
DE3772659D1 (de) *	1986-06-28	1991-10-10	Ulvac Corp	Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik.
JPS6328867A (ja) *	1986-07-22	1988-02-06	Ulvac Corp	Ｃｖｄ法
US4800105A (en) *	1986-07-22	1989-01-24	Nihon Shinku Gijutsu Kabushiki Kaisha	Method of forming a thin film by chemical vapor deposition
US5221556A (en) *	1987-06-24	1993-06-22	Epsilon Technology, Inc.	Gas injectors for reaction chambers in CVD systems
JPH01168023A (ja) *	1987-12-23	1989-07-03	Sharp Corp	半導体製造装置
EP0378543B1 (de) *	1988-06-22	1993-10-06	Advanced Semiconductor Materials America, Inc.	Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag
JPH04504442A (ja) *	1988-12-21	1992-08-06	モンコブスキー―ライン・インコーポレイテッド	化学気相成長反応装置とその使用方法
JPH02234419A (ja) *	1989-03-07	1990-09-17	Koujiyundo Kagaku Kenkyusho:Kk	プラズマ電極

1991
- 1991-08-19 JP JP3206961A patent/JP2641351B2/ja not_active Expired - Fee Related
- 1991-08-22 EP EP19910114081 patent/EP0473067B1/de not_active Expired - Lifetime
- 1991-08-22 DE DE1991616033 patent/DE69116033T2/de not_active Expired - Fee Related
- 1991-08-22 EP EP95106353A patent/EP0688887B1/de not_active Expired - Lifetime
- 1991-08-22 DE DE1991633144 patent/DE69133144T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
DE69116033D1 (de)	1996-02-15
EP0688887B1 (de)	2002-11-06
DE69133144T2 (de)	2003-07-31
EP0473067A1 (de)	1992-03-04
EP0688887A1 (de)	1995-12-27
EP0473067B1 (de)	1996-01-03
DE69116033T2 (de)	1996-09-19
JPH04233723A (ja)	1992-08-21
JP2641351B2 (ja)	1997-08-13

Publication	Publication Date	Title
DE69307509D1 (de)	1997-02-27	Vorrichtung zur behandlung von herzfehlern
DE3752141D1 (de)	1998-01-02	Mittel zur behandlung von neuropathie
DE69227883D1 (de)	1999-01-28	Riechstoffmikrokapseln zur Behandlung von Wäsche
DE69115920D1 (de)	1996-02-08	Verfahren zur Behandlung von schmelzgeblasenen Filamenten
BG96705A (bg)	1993-12-24	Метод за пречистване на отпадъчни води
DE3581514D1 (de)	1991-02-28	Film zur behandlung von halbleiterwaffeln.
DE69019488D1 (de)	1995-06-22	Behandlung von Geflügel.
AT387376B (de)	1989-01-10	Anordnung zur behandlung von wasser
DE69130987D1 (de)	1999-04-15	Vorrichtung zur Behandlung von Halbleiter-Plättchen
DE69018043D1 (de)	1995-04-27	Behandlung von Geflügel.
DE3751780D1 (de)	1996-05-23	Behandlung von Haarausfall
DE3777861D1 (de)	1992-05-07	Behandlung von gasen.
DE69022269D1 (de)	1995-10-19	Verfahren zur thermischen Behandlung von Silizium.
DE69133144D1 (de)	2002-12-12	Reaktor zur Behandlung von Wafern
DE69426848D1 (de)	2001-04-19	Gerät zur Behandlung von lichtempfindlichen Materialien
DE3764053D1 (de)	1990-09-06	Behandlung von waesserigem abfall.
DE68911776D1 (de)	1994-02-10	Konjugierte Oxybutenolide zur Behandlung von Ulcera.
DE69132054D1 (de)	2000-04-20	Behandlung von windelausschlag
DE68923219D1 (de)	1995-08-03	Behandlung von Abfällen.
DE3875016D1 (de)	1992-11-05	Therapeutikum zur behandlung von aids.
DE69212119D1 (de)	1996-08-14	Behandlung von Fotoresistabfall
DE68907569D1 (de)	1993-08-19	Mittel zur behandlung oder vorbeugung von aids.
DE69306831D1 (de)	1997-02-06	Behandlung von Flüssigkeiten
DE69306260D1 (de)	1997-01-09	Behandlung von abwasser
DE3777779D1 (de)	1992-04-30	Behandlung des haares.

Legal Events

Date	Code	Title	Description
2003-12-04	8364	No opposition during term of opposition
2004-06-09	8339	Ceased/non-payment of the annual fee