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DE69111493D1 - Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten. - Google Patents

Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten.

Info

Publication number
DE69111493D1
DE69111493D1 DE69111493T DE69111493T DE69111493D1 DE 69111493 D1 DE69111493 D1 DE 69111493D1 DE 69111493 T DE69111493 T DE 69111493T DE 69111493 T DE69111493 T DE 69111493T DE 69111493 D1 DE69111493 D1 DE 69111493D1
Authority
DE
Germany
Prior art keywords
heaters
manufacture
wafer
heating system
semiconductor manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69111493T
Other languages
English (en)
Other versions
DE69111493T2 (de
Inventor
Takao Soma
Ryusuke Ushikoshi
Kazuhiro Nobori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2060505A external-priority patent/JPH0736391B2/ja
Priority claimed from JP17372290A external-priority patent/JPH0791653B2/ja
Priority claimed from JP2190699A external-priority patent/JPH0628258B2/ja
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE69111493D1 publication Critical patent/DE69111493D1/de
Application granted granted Critical
Publication of DE69111493T2 publication Critical patent/DE69111493T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE69111493T 1990-03-12 1991-03-11 Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten. Expired - Lifetime DE69111493T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2060505A JPH0736391B2 (ja) 1990-03-12 1990-03-12 半導体製造装置用ウエハー加熱装置
JP17372290A JPH0791653B2 (ja) 1990-06-29 1990-06-29 ウエハー加熱体の測温装置およびこれを利用したウエハー加熱装置
JP2190699A JPH0628258B2 (ja) 1990-07-20 1990-07-20 半導体ウエハー加熱装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69111493D1 true DE69111493D1 (de) 1995-08-31
DE69111493T2 DE69111493T2 (de) 1996-03-21

Family

ID=27297213

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69111493T Expired - Lifetime DE69111493T2 (de) 1990-03-12 1991-03-11 Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten.

Country Status (3)

Country Link
US (2) US5231690A (de)
EP (1) EP0447155B1 (de)
DE (1) DE69111493T2 (de)

Families Citing this family (239)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635853B2 (en) * 1909-08-09 2003-10-21 Ibiden Co., Ltd. Hot plate unit
DE69130205T2 (de) * 1990-12-25 1999-03-25 Ngk Insulators, Ltd., Nagoya, Aichi Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
DE69233692T2 (de) * 1991-03-26 2007-12-06 Ngk Insulators, Ltd., Nagoya Verwendung eines korrosion beständigen Substratshalters
JPH06151373A (ja) * 1992-11-12 1994-05-31 Canon Inc 半導体デバイス製造装置
US5800618A (en) * 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
JP2824003B2 (ja) * 1993-02-16 1998-11-11 大日本スクリーン製造株式会社 基板の温度測定装置
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
EP0628644B1 (de) * 1993-05-27 2003-04-02 Applied Materials, Inc. Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
DE4338506A1 (de) * 1993-11-11 1995-05-18 Daimler Benz Ag Anordnung zur thermischen Behandlung von Halbleitersubstraten
JP2642858B2 (ja) * 1993-12-20 1997-08-20 日本碍子株式会社 セラミックスヒーター及び加熱装置
US6033480A (en) * 1994-02-23 2000-03-07 Applied Materials, Inc. Wafer edge deposition elimination
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
WO1996017691A1 (en) * 1994-12-06 1996-06-13 Union Oil Company Of California Wafer holding fixture
JPH08264465A (ja) * 1995-03-23 1996-10-11 Tokyo Electron Ltd 処理装置
US5817406A (en) * 1995-07-14 1998-10-06 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and brazing material connection
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
US5894887A (en) * 1995-11-30 1999-04-20 Applied Materials, Inc. Ceramic dome temperature control using heat pipe structure and method
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US5907763A (en) * 1996-08-23 1999-05-25 International Business Machines Corporation Method and device to monitor integrated temperature in a heat cycle process
US5963840A (en) * 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US6189482B1 (en) 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
US6106630A (en) * 1997-08-07 2000-08-22 Applied Materials, Inc. Ceramic-coated heating assembly for high temperature processing chamber
EP0915499B1 (de) * 1997-11-05 2011-03-23 Tokyo Electron Limited Halbleiterscheibenhaltevorrichtung
US5990453A (en) * 1997-12-02 1999-11-23 Applied Materials, Inc. High pressure/high temperature process chamber
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater
US6204484B1 (en) 1998-03-31 2001-03-20 Steag Rtp Systems, Inc. System for measuring the temperature of a semiconductor wafer during thermal processing
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6224678B1 (en) * 1998-08-12 2001-05-01 Advanced Micro Devices, Inc. Modified thermocouple mounting bushing and system including the same
US6372666B1 (en) * 1998-08-31 2002-04-16 Alliedsignal Inc. Process for producing dielectric thin films
US6078030A (en) * 1998-09-09 2000-06-20 Millipore Corporation Component heater for use in semiconductor manufacturing equipment
JP4166345B2 (ja) * 1998-10-07 2008-10-15 日本碍子株式会社 塩素系ガスに対する耐蝕性部材
JP3434721B2 (ja) * 1998-11-30 2003-08-11 東芝セラミックス株式会社 封止端子
KR100334993B1 (ko) * 1998-12-01 2002-05-02 추후제출 히터
TW517092B (en) * 1999-03-17 2003-01-11 Kobe Steel Ltd High-temperature and high-pressure treatment device
JP2000277521A (ja) * 1999-03-26 2000-10-06 Kobe Steel Ltd 半導体ウェーハの高温高圧処理方法及び装置
JP4005268B2 (ja) * 1999-06-01 2007-11-07 日本碍子株式会社 セラミックスと金属との接合構造およびこれに使用する中間挿入材
JP2001118664A (ja) * 1999-08-09 2001-04-27 Ibiden Co Ltd セラミックヒータ
EP1120829A4 (de) * 1999-08-10 2009-05-27 Ibiden Co Ltd Keramische platte für halbleiterproduktionsanordnung
KR100448294B1 (ko) * 1999-12-18 2004-09-10 주성엔지니어링(주) 고온용 몰딩히터
JP4028149B2 (ja) * 2000-02-03 2007-12-26 日本碍子株式会社 加熱装置
US6686570B2 (en) * 2000-02-10 2004-02-03 Tokyo Electron Limited Hot plate unit
JP2002122486A (ja) * 2000-08-11 2002-04-26 Denso Corp 温度センサの取付構造
WO2002041370A2 (en) * 2000-11-16 2002-05-23 Mattson Technology, Inc. Apparatuses and methods for resistively heating a thermal processing system
US20030000938A1 (en) * 2000-12-01 2003-01-02 Yanling Zhou Ceramic heater, and ceramic heater resistor paste
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
JP2002313781A (ja) * 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板処理装置
WO2002083597A1 (fr) * 2001-04-12 2002-10-24 Ibiden Co., Ltd. Corps soude en ceramique et son procede de fabrication, structure en ceramique destinee a une tranche a semi-conducteurs
TW567177B (en) * 2001-07-19 2003-12-21 Ibiden Co Ltd Ceramic connection body, method of connecting the ceramic bodies, and ceramic structural body
US7122736B2 (en) * 2001-08-16 2006-10-17 Midwest Research Institute Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique
US7080941B1 (en) * 2001-11-13 2006-07-25 Lam Research Corporation Temperature sensing system for temperature measurement in a high radio frequency environment
WO2003077290A1 (fr) * 2002-03-13 2003-09-18 Sumitomo Electric Industries, Ltd. Support destine a un systeme de production de semi-conducteur
JP4311910B2 (ja) * 2002-04-15 2009-08-12 住友電気工業株式会社 半導体製造装置用保持体
JP2003317906A (ja) * 2002-04-24 2003-11-07 Sumitomo Electric Ind Ltd セラミックスヒータ
JP2004095770A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置
JP3832409B2 (ja) * 2002-09-18 2006-10-11 住友電気工業株式会社 ウエハー保持体及び半導体製造装置
JP2004146567A (ja) * 2002-10-24 2004-05-20 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター
JP3979264B2 (ja) * 2002-10-24 2007-09-19 住友電気工業株式会社 半導体製造装置用セラミックスヒーター
JP2004146568A (ja) * 2002-10-24 2004-05-20 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター
JP2004146569A (ja) * 2002-10-24 2004-05-20 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター
JP4060684B2 (ja) 2002-10-29 2008-03-12 日本発条株式会社 ステージ
EP1588404A2 (de) * 2003-01-17 2005-10-26 General Electric Company Waferhandhabungsvorrichtung
JP2004235483A (ja) * 2003-01-31 2004-08-19 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP2004253665A (ja) * 2003-02-21 2004-09-09 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP4111013B2 (ja) * 2003-03-11 2008-07-02 住友電気工業株式会社 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP2004296254A (ja) * 2003-03-27 2004-10-21 Sumitomo Electric Ind Ltd セラミックスヒータおよびそれを搭載した半導体あるいは液晶製造装置
US20060151117A1 (en) * 2003-04-18 2006-07-13 Hitachi Kokusai Electronic Inc. Semiconductor producing device and semiconductor producing method
US20040250774A1 (en) * 2003-06-16 2004-12-16 Brent Elliot Wafer heater with protected heater element
US20080060576A1 (en) * 2003-06-27 2008-03-13 Sumitomo Electric Industries, Ltd. Wafer Holder for Semiconductor Manufacturing Device and Semiconductor Manufacturing Device in Which It Is Installed
US20050051098A1 (en) * 2003-09-05 2005-03-10 Tooru Aramaki Plasma processing apparatus
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20060011139A1 (en) * 2004-07-16 2006-01-19 Applied Materials, Inc. Heated substrate support for chemical vapor deposition
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
US7126092B2 (en) * 2005-01-13 2006-10-24 Watlow Electric Manufacturing Company Heater for wafer processing and methods of operating and manufacturing the same
US20080314320A1 (en) * 2005-02-04 2008-12-25 Component Re-Engineering Company, Inc. Chamber Mount for High Temperature Application of AIN Heaters
US20070169703A1 (en) * 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
DE102006014298A1 (de) * 2006-03-28 2007-10-11 Infineon Technologies Ag Verfahren zur Herstellung von Strukturelementen in einem fotoempfindlichen Lack auf einem Substrat sowie Anordnung zur Durchführung eines thermischen Heizprozesses
DE102006038925A1 (de) * 2006-08-18 2008-02-21 Forschungszentrum Jülich GmbH Vorrichtung zum Heizen einer Probe
JP2008182180A (ja) * 2006-12-26 2008-08-07 Epicrew Inc 加熱装置及び半導体製造装置
US7777160B2 (en) * 2007-12-17 2010-08-17 Momentive Performance Materials Inc. Electrode tuning method and apparatus for a layered heater structure
US20090277388A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Heater with detachable shaft
DE102008035240B4 (de) * 2008-07-29 2017-07-06 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
US20100177454A1 (en) * 2009-01-09 2010-07-15 Component Re-Engineering Company, Inc. Electrostatic chuck with dielectric inserts
JP5416570B2 (ja) * 2009-12-15 2014-02-12 住友電気工業株式会社 加熱冷却デバイスおよびそれを搭載した装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US8932690B2 (en) * 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
US9556074B2 (en) * 2011-11-30 2017-01-31 Component Re-Engineering Company, Inc. Method for manufacture of a multi-layer plate device
KR102226887B1 (ko) 2012-02-29 2021-03-12 오아시스 머티리얼 코포레이션 천이 액체상, 알루미늄 질화물 부품의 무가압 연결
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US10009961B2 (en) * 2014-07-18 2018-06-26 Asm Ip Holding B.V. Local temperature control of susceptor heater for increase of temperature uniformity
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
KR20180112794A (ko) * 2016-01-22 2018-10-12 어플라이드 머티어리얼스, 인코포레이티드 전도성 층들이 매립된 세라믹 샤워헤드
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2961523A (en) * 1959-04-27 1960-11-22 Northrop Corp Portable radiant heater
US3220380A (en) * 1961-08-21 1965-11-30 Merck & Co Inc Deposition chamber including heater element enveloped by a quartz workholder
US3187162A (en) * 1962-06-14 1965-06-01 Hitachi Ltd Apparatus for thermally fixing electronically imprinted images
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3386853A (en) * 1965-12-28 1968-06-04 Paul E. Oberg Spiral vacuum deposition apparatus and method
US3465204A (en) * 1967-07-25 1969-09-02 Berkey Photo Inc Electric system
US3505499A (en) * 1968-04-04 1970-04-07 Siemens Ag Device for thermal processing of disc shaped objects for semiconductors
US3894343A (en) * 1972-06-15 1975-07-15 Thermogenics Of New York Ink curing and drying apparatus
US3786233A (en) * 1972-08-18 1974-01-15 Fasco Industries Infrared heater and ventilator unit
US3923552A (en) * 1972-12-21 1975-12-02 Ppg Industries Inc Hermetically sealed thermocouple assembly
US4032817A (en) * 1974-12-12 1977-06-28 Harris Corporation Wide range power control for electric discharge lamp and press using the same
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4169007A (en) * 1977-10-26 1979-09-25 Flynn Drying System, Inc. Dryer-cooling machine for producing corrugated doubleface corrugated board
JPS5635383A (en) * 1979-08-29 1981-04-08 Kyoto Ceramic Semiconductor integrated circuit support with heating mechanism
GB2069008B (en) * 1980-01-16 1984-09-12 Secr Defence Coating in a glow discharge
US4605627A (en) * 1983-06-07 1986-08-12 The Regents Of The University Of California Plasmid vehicle for cloning in Agrobacterium tumefaciens
JPS59232998A (ja) * 1983-06-17 1984-12-27 Nec Corp 高圧結晶引上装置用サセプタ−
JPS60106968A (ja) * 1983-11-16 1985-06-12 Hitachi Ltd 真空成膜装置用の加熱機構
JPS61104582A (ja) * 1984-10-25 1986-05-22 株式会社デンソー シ−ズヒ−タ
JPS6265978A (ja) * 1985-09-17 1987-03-25 日本碍子株式会社 窒化珪素焼結体およびその製造法
US4665627A (en) * 1985-11-01 1987-05-19 Research, Incorporated Dry film curing machine with ultraviolet lamp controls
US4783908A (en) * 1986-05-09 1988-11-15 A. Monforts Gmbh & Co. Infrared drying apparatus
US4773167A (en) * 1986-05-19 1988-09-27 Amjo Infra Red Dryers, Inc. Heater
US4977001A (en) * 1986-08-01 1990-12-11 Vesuvius Crucible Company Protective cladding for a molybdenum substrate
US4778559A (en) * 1986-10-15 1988-10-18 Advantage Production Technology Semiconductor substrate heater and reactor process and apparatus
JPS63196033A (ja) * 1987-02-09 1988-08-15 Fujitsu Ltd 気相成長装置
US4788416A (en) * 1987-03-02 1988-11-29 Spectrum Cvd, Inc. Direct wafer temperature control
JPS63224227A (ja) * 1987-03-12 1988-09-19 Mitsubishi Electric Corp 半導体薄膜形成装置
US4821674A (en) * 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
JPS63278322A (ja) * 1987-05-11 1988-11-16 Fujitsu Ltd 気相成長装置
US4963423A (en) * 1987-10-08 1990-10-16 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
FR2631165B1 (fr) * 1988-05-05 1992-02-21 Moulene Daniel Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support
FR2641436A1 (de) * 1988-12-30 1990-07-06 Labo Electronique Physique
JPH0687463B2 (ja) * 1989-08-24 1994-11-02 株式会社東芝 半導体気相成長装置
US5126533A (en) * 1990-03-19 1992-06-30 Conductus, Inc. Substrate heater utilizing protective heat sinking means
JPH07104212B2 (ja) * 1990-07-27 1995-11-13 日本碍子株式会社 加熱装置およびその製造方法
JP3014770B2 (ja) * 1990-12-20 2000-02-28 富士通株式会社 半導体製造装置
KR930006305B1 (ko) * 1991-07-09 1993-07-12 한국과학기술연구원 텅스텐 박막 제조용 플라즈마 화학증착 온도 측정장치

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DE69111493T2 (de) 1996-03-21
EP0447155A3 (en) 1991-12-27

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