DE69032419D1 - Halbleiterspeicher mit metallischer Verbindungsschicht vom selben Potential wie Wortleitung und verbunden mit dieser ausserhalb des Speichergebietes - Google Patents

Halbleiterspeicher mit metallischer Verbindungsschicht vom selben Potential wie Wortleitung und verbunden mit dieser ausserhalb des Speichergebietes

Info

Publication number: DE69032419D1
Authority: DE; Germany
Prior art keywords: outside; word line; connection layer; same potential; metallic connection
Prior art date: 1989-09-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69032419T

Other languages

English (en)

Other versions

DE69032419T2 (de

Inventor

Shinsuke Takase

Hisashi Hashimoto

Yutaka Tanaka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Toshiba Electronic Device Solutions Corp

Original Assignee

Toshiba Corp

Toshiba Microelectronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-09-13

Filing date

1990-09-13

Publication date

1998-07-23

1990-09-13 Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp

1998-07-23 Application granted granted Critical

1998-07-23 Publication of DE69032419D1 publication Critical patent/DE69032419D1/de

1998-12-03 Publication of DE69032419T2 publication Critical patent/DE69032419T2/de

2010-09-14 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell

DE69032419T 1989-09-13 1990-09-13 Halbleiterspeicher mit metallischer Verbindungsschicht vom selben Potential wie Wortleitung und verbunden mit dieser ausserhalb des Speichergebietes Expired - Fee Related DE69032419T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP23750789A JPH07114258B2 (ja)	1989-09-13	1989-09-13	半導体メモリ

Publications (2)

Publication Number	Publication Date
DE69032419D1 true DE69032419D1 (de)	1998-07-23
DE69032419T2 DE69032419T2 (de)	1998-12-03

Family

ID=17016345

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69032419T Expired - Fee Related DE69032419T2 (de)	1989-09-13	1990-09-13	Halbleiterspeicher mit metallischer Verbindungsschicht vom selben Potential wie Wortleitung und verbunden mit dieser ausserhalb des Speichergebietes

Country Status (5)

Country	Link
US (1)	US5698872A (de)
EP (1)	EP0421168B1 (de)
JP (1)	JPH07114258B2 (de)
KR (1)	KR930009020B1 (de)
DE (1)	DE69032419T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5410173A (en) *	1991-01-28	1995-04-25	Kikushima; Ken'ichi	Semiconductor integrated circuit device
US5783849A (en) *	1996-02-23	1998-07-21	Citizen Watch Co., Ltd.	Semiconductor device
KR100269297B1 (ko) *	1997-04-25	2000-12-01	윤종용	파워라인들과제어라인들을구비하는집적회로
US5864496A (en) *	1997-09-29	1999-01-26	Siemens Aktiengesellschaft	High density semiconductor memory having diagonal bit lines and dual word lines
US6033955A (en) *	1998-09-23	2000-03-07	Advanced Micro Devices, Inc.	Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture
JP2001344966A (ja) *	2000-06-06	2001-12-14	Toshiba Corp	半導体記憶装置
US6703641B2 (en) *	2001-11-16	2004-03-09	International Business Machines Corporation	Structure for detecting charging effects in device processing
JP2004119937A (ja) *	2002-09-30	2004-04-15	Fujitsu Ltd	半導体記憶装置
US6927429B2 (en) *	2003-02-14	2005-08-09	Freescale Semiconductor, Inc.	Integrated circuit well bias circuity
US7042030B2 (en) *	2003-11-21	2006-05-09	Texas Instruments Incorporated	High density memory array

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4342100A (en) *	1979-01-08	1982-07-27	Texas Instruments Incorporated	Implant programmable metal gate MOS read only memory
JPS5854654A (ja) *	1981-09-28	1983-03-31	Nec Corp	半導体集積回路装置
EP0087979B1 (de) *	1982-03-03	1989-09-06	Fujitsu Limited	Halbleiter-Speichervorrichtung
JPS594159A (ja) *	1982-06-30	1984-01-10	Mitsubishi Electric Corp	半導体集積回路
JPS6030170A (ja) *	1983-07-29	1985-02-15	Hitachi Ltd	高集積読み出し専用メモリ
JPH0793364B2 (ja) *	1984-08-10	1995-10-09	株式会社日立製作所	半導体集積回路装置
US4679171A (en) *	1985-02-07	1987-07-07	Visic, Inc.	MOS/CMOS memory cell
JPS61267347A (ja) *	1985-05-22	1986-11-26	Toshiba Corp	半導体装置
JPS62145862A (ja) *	1985-12-20	1987-06-29	Sanyo Electric Co Ltd	半導体記憶装置
JPS62169472A (ja) *	1986-01-22	1987-07-25	Hitachi Ltd	半導体集積回路装置
US4744056A (en) *	1986-02-28	1988-05-10	Advanced Micro Devices, Inc.	Stable high density RAM
JPH01140741A (ja) *	1987-11-27	1989-06-01	Ricoh Co Ltd	半導体メモリ装置

1989
- 1989-09-13 JP JP23750789A patent/JPH07114258B2/ja not_active Expired - Lifetime
1990
- 1990-09-13 EP EP90117656A patent/EP0421168B1/de not_active Expired - Lifetime
- 1990-09-13 DE DE69032419T patent/DE69032419T2/de not_active Expired - Fee Related
- 1990-09-13 KR KR1019900014435A patent/KR930009020B1/ko not_active IP Right Cessation
1995
- 1995-06-07 US US08/476,905 patent/US5698872A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0421168B1 (de)	1998-06-17
EP0421168A2 (de)	1991-04-10
JPH07114258B2 (ja)	1995-12-06
DE69032419T2 (de)	1998-12-03
KR910007122A (ko)	1991-04-30
US5698872A (en)	1997-12-16
JPH03101152A (ja)	1991-04-25
KR930009020B1 (ko)	1993-09-18
EP0421168A3 (en)	1994-07-13

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Legal Events

Date	Code	Title	Description
1999-07-15	8364	No opposition during term of opposition
2009-07-23	8339	Ceased/non-payment of the annual fee