DE69026213D1 - Schnelle Dämpfungsdiode - Google Patents
Schnelle DämpfungsdiodeInfo
- Publication number
- DE69026213D1 DE69026213D1 DE69026213T DE69026213T DE69026213D1 DE 69026213 D1 DE69026213 D1 DE 69026213D1 DE 69026213 T DE69026213 T DE 69026213T DE 69026213 T DE69026213 T DE 69026213T DE 69026213 D1 DE69026213 D1 DE 69026213D1
- Authority
- DE
- Germany
- Prior art keywords
- damping diode
- fast damping
- fast
- diode
- damping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44361589A | 1989-11-29 | 1989-11-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69026213D1 true DE69026213D1 (de) | 1996-05-02 |
DE69026213T2 DE69026213T2 (de) | 1996-10-31 |
Family
ID=23761509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69026213T Expired - Fee Related DE69026213T2 (de) | 1989-11-29 | 1990-11-27 | Schnelle Dämpfungsdiode |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0431817B1 (de) |
JP (1) | JP2833205B2 (de) |
KR (1) | KR0149840B1 (de) |
DE (1) | DE69026213T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69842207D1 (en) | 1998-06-01 | 2011-05-12 | Mitsubishi Electric Corp | Diode |
AT503964B1 (de) | 2007-01-23 | 2008-02-15 | Siemens Ag Oesterreich | Schaltungsanordnung zur begrenzung von spannungsüberhöhungen |
FR3107988B1 (fr) * | 2020-03-05 | 2023-11-10 | St Microelectronics Tours Sas | Formation d'un thyristor, triac ou diode de suppression de tensions transitoires |
CN116169181B (zh) * | 2022-09-30 | 2023-07-18 | 富芯微电子有限公司 | 一种低漏电低压tvs器件及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115871A (ja) * | 1981-12-28 | 1983-07-09 | Toshiba Corp | 高周波リミタダイオ−ド |
-
1990
- 1990-09-28 KR KR1019900015453A patent/KR0149840B1/ko not_active IP Right Cessation
- 1990-11-27 DE DE69026213T patent/DE69026213T2/de not_active Expired - Fee Related
- 1990-11-27 EP EP90312896A patent/EP0431817B1/de not_active Expired - Lifetime
- 1990-11-28 JP JP2323377A patent/JP2833205B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0431817B1 (de) | 1996-03-27 |
DE69026213T2 (de) | 1996-10-31 |
EP0431817A1 (de) | 1991-06-12 |
KR910010752A (ko) | 1991-06-29 |
JP2833205B2 (ja) | 1998-12-09 |
JPH03229471A (ja) | 1991-10-11 |
KR0149840B1 (ko) | 1998-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |