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DE69025831D1 - Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet. - Google Patents

Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet.

Info

Publication number
DE69025831D1
DE69025831D1 DE69025831T DE69025831T DE69025831D1 DE 69025831 D1 DE69025831 D1 DE 69025831D1 DE 69025831 T DE69025831 T DE 69025831T DE 69025831 T DE69025831 T DE 69025831T DE 69025831 D1 DE69025831 D1 DE 69025831D1
Authority
DE
Germany
Prior art keywords
manufacturing
electron emitting
emitting device
electron
beam writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025831T
Other languages
English (en)
Other versions
DE69025831T2 (de
Inventor
Nobuo Watanabe
Takeo Tsukamoto
Masahiko Okunuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23393889A external-priority patent/JP2790219B2/ja
Priority claimed from JP23393789A external-priority patent/JP2790218B2/ja
Priority claimed from JP1320823A external-priority patent/JPH03182029A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69025831D1 publication Critical patent/DE69025831D1/de
Application granted granted Critical
Publication of DE69025831T2 publication Critical patent/DE69025831T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69025831T 1989-09-07 1990-09-06 Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet. Expired - Fee Related DE69025831T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23393889A JP2790219B2 (ja) 1989-09-07 1989-09-07 電界放出型電子放出素子
JP23393789A JP2790218B2 (ja) 1989-09-07 1989-09-07 電界放出型電子放出素子
JP1320823A JPH03182029A (ja) 1989-12-11 1989-12-11 電子放出素子およびこれを用いたディスプレイ装置並びに電子線描画装置

Publications (2)

Publication Number Publication Date
DE69025831D1 true DE69025831D1 (de) 1996-04-18
DE69025831T2 DE69025831T2 (de) 1996-09-19

Family

ID=27332060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025831T Expired - Fee Related DE69025831T2 (de) 1989-09-07 1990-09-06 Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet.

Country Status (3)

Country Link
US (1) US5391956A (de)
EP (1) EP0416625B1 (de)
DE (1) DE69025831T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382867A (en) * 1991-10-02 1995-01-17 Sharp Kabushiki Kaisha Field-emission type electronic device
DE4209301C1 (en) * 1992-03-21 1993-08-19 Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt, De Manufacture of controlled field emitter for flat display screen, TV etc. - using successive etching and deposition stages to form cone shaped emitter peak set in insulating matrix together with electrodes
US5374868A (en) * 1992-09-11 1994-12-20 Micron Display Technology, Inc. Method for formation of a trench accessible cold-cathode field emission device
US5584739A (en) * 1993-02-10 1996-12-17 Futaba Denshi Kogyo K.K Field emission element and process for manufacturing same
FR2705830B1 (fr) * 1993-05-27 1995-06-30 Commissariat Energie Atomique Procédé de fabrication de dispositifs d'affichage à micropointes, utilisant la lithographie par ions lourds.
US7025892B1 (en) 1993-09-08 2006-04-11 Candescent Technologies Corporation Method for creating gated filament structures for field emission displays
US5564959A (en) 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
EP0675519A1 (de) * 1994-03-30 1995-10-04 AT&T Corp. Vorrichtung mit Feldeffekt-Emittern
JP2809129B2 (ja) * 1995-04-20 1998-10-08 日本電気株式会社 電界放射冷陰極とこれを用いた表示装置
JP3033484B2 (ja) * 1995-12-21 2000-04-17 日本電気株式会社 電子線露光装置
US5755944A (en) * 1996-06-07 1998-05-26 Candescent Technologies Corporation Formation of layer having openings produced by utilizing particles deposited under influence of electric field
US5865659A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
US6187603B1 (en) 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US5865657A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
DE69621017T2 (de) * 1996-10-04 2002-10-31 Stmicroelectronics S.R.L., Agrate Brianza Herstellungsverfahren einer flachen Feldemissionsanzeige und nach diesem Verfahren hergestellte Anzeige
JP3542031B2 (ja) * 2000-11-20 2004-07-14 松下電器産業株式会社 冷陰極形成方法、及び電子放出素子並びにその応用デバイス
JP2002344011A (ja) * 2001-05-15 2002-11-29 Sony Corp 表示素子及びこれを用いた表示装置
US6554673B2 (en) * 2001-07-31 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method of making electron emitters
US20100200766A1 (en) * 2007-07-26 2010-08-12 Ho Seob Kim Electron emitter having nano-structure tip and electron column using the same
JP2010267474A (ja) * 2009-05-14 2010-11-25 Canon Inc 電子線装置及びこれを用いた画像表示装置
US9331189B2 (en) * 2012-05-09 2016-05-03 University of Pittsburgh—of the Commonwealth System of Higher Education Low voltage nanoscale vacuum electronic devices

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
JPS5436828B2 (de) * 1974-08-16 1979-11-12
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
SU851543A1 (ru) * 1979-10-29 1981-07-30 Московский Институт Радиотехники,Электроники И Автоматики Электронный управл емый источник сАВТОэлЕКТРОННОй эМиССиЕй
JPS62229151A (ja) * 1985-11-05 1987-10-07 Mitsubishi Electric Corp パタ−ンマスクの作製方法
US4810934A (en) * 1986-05-20 1989-03-07 Canon Kabushiki Kaisha Electron emission device
JPS63950A (ja) * 1986-06-19 1988-01-05 Canon Inc 電子放出装置
JP2612572B2 (ja) * 1987-04-14 1997-05-21 キヤノン株式会社 電子放出素子
JP2599591B2 (ja) * 1987-04-28 1997-04-09 キヤノン株式会社 電子放出素子特性測定装置
JPS63269445A (ja) * 1987-04-28 1988-11-07 Canon Inc 電子ビーム発生素子
JP2704731B2 (ja) * 1987-07-28 1998-01-26 キヤノン株式会社 電子放出素子及びその駆動方法
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5090932A (en) * 1988-03-25 1992-02-25 Thomson-Csf Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters
US4964946A (en) * 1990-02-02 1990-10-23 The United States Of America As Represented By The Secretary Of The Navy Process for fabricating self-aligned field emitter arrays

Also Published As

Publication number Publication date
EP0416625A2 (de) 1991-03-13
EP0416625B1 (de) 1996-03-13
DE69025831T2 (de) 1996-09-19
EP0416625A3 (en) 1991-06-26
US5391956A (en) 1995-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee