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DE69016633D1 - CVD-Anlage und Verfahren zum Bilden einer Dünnschicht. - Google Patents

CVD-Anlage und Verfahren zum Bilden einer Dünnschicht.

Info

Publication number
DE69016633D1
DE69016633D1 DE69016633T DE69016633T DE69016633D1 DE 69016633 D1 DE69016633 D1 DE 69016633D1 DE 69016633 T DE69016633 T DE 69016633T DE 69016633 T DE69016633 T DE 69016633T DE 69016633 D1 DE69016633 D1 DE 69016633D1
Authority
DE
Germany
Prior art keywords
forming
thin film
cvd system
cvd
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016633T
Other languages
English (en)
Other versions
DE69016633T2 (de
Inventor
Tomohiro Ohta
Eiichi Kondoh
Tohru Mitomo
Kenichi Otsuka
Hiroshi Sekihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAWASAKI STEEL MICROELECTRONICS, INC., CHIBA, JP
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3949590A external-priority patent/JPH02289494A/ja
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Application granted granted Critical
Publication of DE69016633D1 publication Critical patent/DE69016633D1/de
Publication of DE69016633T2 publication Critical patent/DE69016633T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69016633T 1989-12-01 1990-08-21 CVD-Anlage und Verfahren zum Bilden einer Dünnschicht. Expired - Fee Related DE69016633T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31250989 1989-12-01
JP3949590A JPH02289494A (ja) 1989-02-22 1990-02-20 ダイヤモンドの合成装置

Publications (2)

Publication Number Publication Date
DE69016633D1 true DE69016633D1 (de) 1995-03-16
DE69016633T2 DE69016633T2 (de) 1995-05-24

Family

ID=26378907

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016633T Expired - Fee Related DE69016633T2 (de) 1989-12-01 1990-08-21 CVD-Anlage und Verfahren zum Bilden einer Dünnschicht.

Country Status (4)

Country Link
US (1) US5225245A (de)
EP (1) EP0436070B1 (de)
CA (1) CA2023684A1 (de)
DE (1) DE69016633T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09157846A (ja) * 1995-12-01 1997-06-17 Teisan Kk 温度調節装置
US6121061A (en) * 1997-11-03 2000-09-19 Asm America, Inc. Method of processing wafers with low mass support
JP4294140B2 (ja) * 1999-01-27 2009-07-08 有限会社アプライドダイヤモンド ダイヤモンド薄膜の改質方法及びダイヤモンド薄膜の改質及び薄膜形成方法並びにダイヤモンド薄膜の加工方法
US6191399B1 (en) 2000-02-01 2001-02-20 Asm America, Inc. System of controlling the temperature of a processing chamber
US6596973B1 (en) 2002-03-07 2003-07-22 Asm America, Inc. Pyrometer calibrated wafer temperature estimator
US6818864B2 (en) * 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
DE10239486A1 (de) * 2002-08-21 2004-03-04 Carl Zeiss Smt Ag Verfahren zur Herstellung von teilbeschichteten Substraten
US6976782B1 (en) * 2003-11-24 2005-12-20 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring
US7833581B2 (en) * 2006-09-11 2010-11-16 The Hong Kong University Of Science And Technology Method for making a highly stable diamond film on a substrate
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US12195842B2 (en) * 2019-11-11 2025-01-14 Beijing Naura Microelectronics Equipment Co., Ltd. Sputtering device with microwave heating mechanism

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus

Also Published As

Publication number Publication date
US5225245A (en) 1993-07-06
DE69016633T2 (de) 1995-05-24
CA2023684A1 (en) 1991-06-02
EP0436070B1 (de) 1995-02-01
EP0436070A1 (de) 1991-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KAWASAKI STEEL MICROELECTRONICS, INC., CHIBA, JP

8339 Ceased/non-payment of the annual fee