DE69014815D1 - Kapazitiver Detektor von elektromagnetischen Wellen. - Google Patents
Kapazitiver Detektor von elektromagnetischen Wellen.Info
- Publication number
- DE69014815D1 DE69014815D1 DE69014815T DE69014815T DE69014815D1 DE 69014815 D1 DE69014815 D1 DE 69014815D1 DE 69014815 T DE69014815 T DE 69014815T DE 69014815 T DE69014815 T DE 69014815T DE 69014815 D1 DE69014815 D1 DE 69014815D1
- Authority
- DE
- Germany
- Prior art keywords
- electromagnetic waves
- capacitive detector
- capacitive
- detector
- waves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8913326A FR2653229B1 (fr) | 1989-10-12 | 1989-10-12 | Detecteur capacitif d'onde electromagnetique. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69014815D1 true DE69014815D1 (de) | 1995-01-19 |
DE69014815T2 DE69014815T2 (de) | 1995-05-04 |
Family
ID=9386316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69014815T Expired - Fee Related DE69014815T2 (de) | 1989-10-12 | 1990-10-03 | Kapazitiver Detektor von elektromagnetischen Wellen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5086327A (de) |
EP (1) | EP0422990B1 (de) |
DE (1) | DE69014815T2 (de) |
FR (1) | FR2653229B1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206526A (en) * | 1991-05-13 | 1993-04-27 | At&T Bell Laboratories | Staircase bandgap photodetector using recombination |
FR2678774B1 (fr) * | 1991-07-05 | 1998-07-10 | Thomson Csf | Detecteur d'ondes electromagnetiques. |
FR2682477B1 (fr) * | 1991-10-11 | 1994-04-15 | Thomson Csf | Spectrometre. |
FR2684807B1 (fr) * | 1991-12-10 | 2004-06-11 | Thomson Csf | Transistor a puits quantique a effet tunnel resonnant. |
FR2718571B1 (fr) * | 1994-04-08 | 1996-05-15 | Thomson Csf | Composant hybride semiconducteur. |
FR2726903B1 (fr) * | 1994-11-10 | 1996-12-06 | Thomson Csf | Ecartometre integre |
FR2736168B1 (fr) * | 1995-06-30 | 1997-07-25 | Thomson Csf | Convertisseur de frequence comprenant un guide semiconducteur a heterostructure |
FR2756667B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques bispectral |
FR2756666B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques |
FR2757684B1 (fr) * | 1996-12-20 | 1999-03-26 | Thomson Csf | Detecteur infrarouge a structure quantique, non refroidie |
FR2761537B1 (fr) | 1997-04-01 | 1999-06-11 | Thomson Csf | Laser comprenant un empilement de diodes laser epitaxiees compris entre deux miroirs de bragg |
FR2772919B1 (fr) | 1997-12-23 | 2000-03-17 | Thomson Csf | Imageur infrarouge a structure quantique fonctionnant a temperature ambiante |
FR2780203B1 (fr) * | 1998-06-23 | 2003-07-04 | Thomson Csf | Detecteur a puits quantique avec couche de stockage des electrons photoexcites |
FR2808925B1 (fr) | 2000-05-12 | 2003-08-08 | Thomson Csf | Detecteur optique bi-spectral |
FR2808926B1 (fr) * | 2000-05-12 | 2003-08-01 | Thomson Csf | Detecteur optique polarimetrique |
FR2811808B1 (fr) | 2000-07-11 | 2002-10-25 | Thomson Csf | Dispositif d'auto-compensation pour detecteurs soustractifs |
FR2855653B1 (fr) * | 2003-05-27 | 2005-10-21 | Thales Sa | Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe |
FR2855654B1 (fr) * | 2003-05-27 | 2006-03-03 | Thales Sa | Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires |
FR2863774B1 (fr) * | 2003-12-16 | 2006-03-03 | Thales Sa | Photodetecteur a concentration de champ proche |
FR2937792B1 (fr) * | 2008-10-24 | 2011-03-18 | Thales Sa | Dispositif d'imagerie multispectral a base de multi-puits quantiques |
FR2937791B1 (fr) * | 2008-10-24 | 2010-11-26 | Thales Sa | Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4745452A (en) * | 1984-09-24 | 1988-05-17 | Massachusetts Institute Of Technology | Tunneling transfer devices |
US4905056A (en) * | 1988-09-30 | 1990-02-27 | Berndt Dale F | Superlattice precision voltage reference |
US4987458A (en) * | 1989-06-30 | 1991-01-22 | Georgia Tech Research Corporation | Semiconductor biased superlattice tunable interference filter/emitter |
-
1989
- 1989-10-12 FR FR8913326A patent/FR2653229B1/fr not_active Expired - Lifetime
-
1990
- 1990-10-03 DE DE69014815T patent/DE69014815T2/de not_active Expired - Fee Related
- 1990-10-03 EP EP90402736A patent/EP0422990B1/de not_active Expired - Lifetime
- 1990-10-09 US US07/593,992 patent/US5086327A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2653229B1 (fr) | 1992-01-17 |
US5086327A (en) | 1992-02-04 |
FR2653229A1 (fr) | 1991-04-19 |
EP0422990B1 (de) | 1994-12-07 |
EP0422990A1 (de) | 1991-04-17 |
DE69014815T2 (de) | 1995-05-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |