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DE69013589D1 - Verfahren zur Abscheidung von Zinksulfidfilmen. - Google Patents

Verfahren zur Abscheidung von Zinksulfidfilmen.

Info

Publication number
DE69013589D1
DE69013589D1 DE69013589T DE69013589T DE69013589D1 DE 69013589 D1 DE69013589 D1 DE 69013589D1 DE 69013589 T DE69013589 T DE 69013589T DE 69013589 T DE69013589 T DE 69013589T DE 69013589 D1 DE69013589 D1 DE 69013589D1
Authority
DE
Germany
Prior art keywords
deposition
zinc sulfide
sulfide films
films
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69013589T
Other languages
English (en)
Other versions
DE69013589T2 (de
Inventor
Larry D Hutchins
Rudy L York
Patricia B Smith
Joseph D Luttmer
Cecil J Davis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69013589D1 publication Critical patent/DE69013589D1/de
Application granted granted Critical
Publication of DE69013589T2 publication Critical patent/DE69013589T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
DE69013589T 1989-06-30 1990-06-25 Verfahren zur Abscheidung von Zinksulfidfilmen. Expired - Fee Related DE69013589T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/374,883 US5077092A (en) 1989-06-30 1989-06-30 Method and apparatus for deposition of zinc sulfide films

Publications (2)

Publication Number Publication Date
DE69013589D1 true DE69013589D1 (de) 1994-12-01
DE69013589T2 DE69013589T2 (de) 1995-05-24

Family

ID=23478578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69013589T Expired - Fee Related DE69013589T2 (de) 1989-06-30 1990-06-25 Verfahren zur Abscheidung von Zinksulfidfilmen.

Country Status (4)

Country Link
US (1) US5077092A (de)
EP (1) EP0405875B1 (de)
JP (1) JPH03263316A (de)
DE (1) DE69013589T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273774A (en) * 1992-12-31 1993-12-28 Osram Sylvania Inc. Method of making zinc sulfide electroluminescent phosphor particles
US5837320A (en) * 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US6083561A (en) * 1998-02-05 2000-07-04 Cvd, Inc. Low scatter, high quality water clear zinc sulfide
US6221482B1 (en) 1999-04-07 2001-04-24 Cvd Inc. Low stress, water-clear zinc sulfide
US20090001491A1 (en) * 2006-10-30 2009-01-01 Biomimetics Technologies Inc Method for producing a microchip that is able to detect infrared light with a semiconductor at room temperature
WO2009051799A1 (en) * 2007-10-18 2009-04-23 Structured Materials Inc. Germanium sulfide compounds for solid electrolytic memory elements
CN107604340B (zh) * 2017-08-31 2023-09-01 安徽光智科技有限公司 化学气相沉积炉
JP7110516B1 (ja) * 2021-03-04 2022-08-01 株式会社東芝 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
JPH0645879B2 (ja) * 1985-01-17 1994-06-15 セイコーエプソン株式会社 硫化亜鉛薄膜の製造法
JPH0645878B2 (ja) * 1985-01-17 1994-06-15 セイコーエプソン株式会社 硫化亜鉛薄膜の製造法
JPS61166967A (ja) * 1985-01-18 1986-07-28 Mitsubishi Electric Corp スパツタ装置のウエハ保持装置
JPS61205696A (ja) * 1985-03-07 1986-09-11 Nec Corp ３−５族化合物半導体の気相成長装置
JPH0613438B2 (ja) * 1985-03-08 1994-02-23 日本電信電話株式会社 硫化亜鉛膜の作製方法
JPS61205695A (ja) * 1985-03-11 1986-09-11 Sumitomo Electric Ind Ltd 気相エピタキシヤル成長装置
JPS61243180A (ja) * 1985-04-19 1986-10-29 Sumitomo Electric Ind Ltd 被覆鋼の製造法
JPS61243177A (ja) * 1985-04-20 1986-10-29 Kanegafuchi Chem Ind Co Ltd 硫化亜鉛薄膜の製造方法
JPS61243179A (ja) * 1985-04-22 1986-10-29 Denki Kagaku Kogyo Kk 金属管内面の被膜形成装置

Also Published As

Publication number Publication date
JPH03263316A (ja) 1991-11-22
US5077092A (en) 1991-12-31
DE69013589T2 (de) 1995-05-24
EP0405875B1 (de) 1994-10-26
EP0405875A1 (de) 1991-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO., LEXINGTON, MASS., US

8339 Ceased/non-payment of the annual fee