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DE69012409D1 - Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase. - Google Patents

Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase.

Info

Publication number
DE69012409D1
DE69012409D1 DE69012409T DE69012409T DE69012409D1 DE 69012409 D1 DE69012409 D1 DE 69012409D1 DE 69012409 T DE69012409 T DE 69012409T DE 69012409 T DE69012409 T DE 69012409T DE 69012409 D1 DE69012409 D1 DE 69012409D1
Authority
DE
Germany
Prior art keywords
semiconductors
deposition
production
gas phase
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69012409T
Other languages
English (en)
Other versions
DE69012409T2 (de
Inventor
Akira Yoshino
Yoshinori Ohmori
Kenji Okumura
Toshiharu Ohnishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Water Inc
Original Assignee
Daido Sanso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3986289U external-priority patent/JPH0648828Y2/ja
Priority claimed from JP9165189A external-priority patent/JPH0831418B2/ja
Application filed by Daido Sanso Co Ltd filed Critical Daido Sanso Co Ltd
Publication of DE69012409D1 publication Critical patent/DE69012409D1/de
Application granted granted Critical
Publication of DE69012409T2 publication Critical patent/DE69012409T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69012409T 1989-04-03 1990-03-16 Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase. Expired - Lifetime DE69012409T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3986289U JPH0648828Y2 (ja) 1989-04-03 1989-04-03 汚染防止器
JP9165189A JPH0831418B2 (ja) 1989-04-10 1989-04-10 半導体製造装置

Publications (2)

Publication Number Publication Date
DE69012409D1 true DE69012409D1 (de) 1994-10-20
DE69012409T2 DE69012409T2 (de) 1995-04-20

Family

ID=26379274

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012409T Expired - Lifetime DE69012409T2 (de) 1989-04-03 1990-03-16 Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase.

Country Status (4)

Country Link
US (1) US4979465A (de)
EP (1) EP0396239B1 (de)
KR (1) KR950000511B1 (de)
DE (1) DE69012409T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118642A (en) * 1991-01-24 1992-06-02 Daidousanso Co., Ltd. Method for producing semiconductors
JP3214505B2 (ja) * 1991-09-13 2001-10-02 株式会社デンソー 半導体装置の製造方法
JPH0811718B2 (ja) * 1992-02-27 1996-02-07 大同ほくさん株式会社 ガスソース分子線エピタキシー装置
DE69838006T2 (de) 1997-02-05 2008-03-13 Cemecon Ag Beschichtungsvorrichtung
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6173673B1 (en) 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US6143144A (en) * 1999-07-30 2000-11-07 Tokyo Electronlimited Method for etch rate enhancement by background oxygen control in a soft etch system
US7017514B1 (en) * 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
GB2415707A (en) * 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm
CN103122456A (zh) * 2011-11-18 2013-05-29 沈阳拓荆科技有限公司 一种双腔室或多腔室薄膜沉积设备的气体混合分配结构
CN109895975A (zh) 2017-12-07 2019-06-18 朴永赞 水上套装
CN112481602B (zh) * 2019-09-11 2023-12-15 艾特材料有限公司 一种在陶瓷背板上沉积金属氧化物薄膜的方法及设备
US11827977B2 (en) * 2021-04-19 2023-11-28 Innoscience (Suzhou) Technology Co., Ltd. Laminar flow MOCVD apparatus for III-nitride films

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1929422B2 (de) * 1969-06-10 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus
US3916822A (en) * 1974-04-26 1975-11-04 Bell Telephone Labor Inc Chemical vapor deposition reactor
CH640571A5 (fr) * 1981-03-06 1984-01-13 Battelle Memorial Institute Procede et dispositif pour deposer sur un substrat une couche de matiere minerale.
FR2514033B1 (fr) * 1981-10-02 1985-09-27 Henaff Louis Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma
JPS59104117A (ja) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol 減圧堆積装置
WO1987007310A1 (en) * 1986-05-19 1987-12-03 Novellus Systems, Inc. Deposition apparatus
US4838201A (en) * 1986-12-12 1989-06-13 Daido Sanso K. K. Apparatus and process for vacuum chemical epitaxy
US4751372A (en) * 1986-12-12 1988-06-14 Daido Sanso K.K. Vacuum chamber heater apparatus
JPS63227011A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 化学気相成長装置

Also Published As

Publication number Publication date
EP0396239B1 (de) 1994-09-14
KR900017126A (ko) 1990-11-15
KR950000511B1 (ko) 1995-01-24
EP0396239A2 (de) 1990-11-07
EP0396239A3 (de) 1991-03-27
DE69012409T2 (de) 1995-04-20
US4979465A (en) 1990-12-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: DAIDO HOXAN INC., SAPPORO, JP

8327 Change in the person/name/address of the patent owner

Owner name: AIR WATER INC., SAPPORO, HOKKAIDO, JP