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DE69011751D1 - Verfahren und Vorrichtung zur Markierung und Spaltung von monokristallinen halbleitenden Plättchen. - Google Patents

Verfahren und Vorrichtung zur Markierung und Spaltung von monokristallinen halbleitenden Plättchen.

Info

Publication number
DE69011751D1
DE69011751D1 DE69011751T DE69011751T DE69011751D1 DE 69011751 D1 DE69011751 D1 DE 69011751D1 DE 69011751 T DE69011751 T DE 69011751T DE 69011751 T DE69011751 T DE 69011751T DE 69011751 D1 DE69011751 D1 DE 69011751D1
Authority
DE
Germany
Prior art keywords
cleaving
platelets
marking
monocrystalline semiconducting
semiconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69011751T
Other languages
English (en)
Other versions
DE69011751T2 (de
Inventor
Gerard Petroz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69011751D1 publication Critical patent/DE69011751D1/de
Publication of DE69011751T2 publication Critical patent/DE69011751T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/30—Breaking or tearing apparatus
    • Y10T225/307—Combined with preliminary weakener or with nonbreaking cutter
    • Y10T225/321—Preliminary weakener
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/02—Other than completely through work thickness
    • Y10T83/0333—Scoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/02—Other than completely through work thickness
    • Y10T83/0333—Scoring
    • Y10T83/0341—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/02—Other than completely through work thickness
    • Y10T83/0333—Scoring
    • Y10T83/0356—Serially
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/828—With illuminating or viewing means for work
    • Y10T83/839—Mirror or lens

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Sampling And Sample Adjustment (AREA)
DE69011751T 1989-06-07 1990-06-05 Verfahren und Vorrichtung zur Markierung und Spaltung von monokristallinen halbleitenden Plättchen. Expired - Fee Related DE69011751T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR898907537A FR2648274B1 (fr) 1989-06-07 1989-06-07 Procede et dispositif de marquage et de clivage de plaquettes de materiaux semi-conducteurs monocristallins

Publications (2)

Publication Number Publication Date
DE69011751D1 true DE69011751D1 (de) 1994-09-29
DE69011751T2 DE69011751T2 (de) 1995-03-16

Family

ID=9382472

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69011751T Expired - Fee Related DE69011751T2 (de) 1989-06-07 1990-06-05 Verfahren und Vorrichtung zur Markierung und Spaltung von monokristallinen halbleitenden Plättchen.

Country Status (5)

Country Link
US (1) US5174188A (de)
EP (1) EP0402230B1 (de)
JP (1) JPH0342855A (de)
DE (1) DE69011751T2 (de)
FR (1) FR2648274B1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2269268B (en) * 1992-07-31 1995-11-29 Northern Telecom Ltd Semiconductor slice cleaving
US5580831A (en) * 1993-07-28 1996-12-03 Fujitsu Limited Sawcut method of forming alignment marks on two faces of a substrate
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
ATE291529T1 (de) * 1994-01-18 2005-04-15 Dynatex Internat Inc Verfahren und vorrichtung zum anritzen und/oder brechen von halbleiterplättchen
US5454002A (en) * 1994-04-28 1995-09-26 The Board Of Regents Of The University Of Oklahoma High temperature semiconductor diode laser
DE19606653C1 (de) * 1996-02-23 1997-01-16 Leica Ag Einrichtung zum Brechen von Dreiecks-Glasmessern für die Ultra-Mikrotomie
DE19613561C2 (de) * 1996-04-04 2002-04-11 Micronas Gmbh Verfahren zum Vereinzeln von in einem Körper miteinander verbundenen, elektrisch getesteten elektronischen Elementen
US6122562A (en) * 1997-05-05 2000-09-19 Applied Materials, Inc. Method and apparatus for selectively marking a semiconductor wafer
WO1999039885A1 (en) * 1998-02-06 1999-08-12 Dynatex International Apparatus and process for membrane mounted die breaking with automated visualization
JP3326384B2 (ja) * 1998-03-12 2002-09-24 古河電気工業株式会社 半導体ウエハーの劈開方法およびその装置
US6412677B1 (en) * 1998-09-16 2002-07-02 Hoya Corporation Cutting method for plate glass mother material
US6074934A (en) * 1998-11-20 2000-06-13 Lucent Technologies Inc. Apparatus for cleaving laser bars
US6601488B1 (en) * 1999-05-07 2003-08-05 University Of Kentucky Research Foundation Cutter assembly for a microscope and related method
TWI226280B (en) * 2002-09-25 2005-01-11 Au Optronics Corp Precision notching device and method for cutting test piece
US20040187523A1 (en) * 2003-03-24 2004-09-30 Corning Incorporated Score bar instrumented with a force sensor
TWI249762B (en) * 2003-12-03 2006-02-21 Ind Tech Res Inst Sheet cutting device
DE102006034287B3 (de) * 2006-07-21 2008-02-28 Kraussmaffei Technologies Gmbh Vorrichtung zur Einbringung von Schwächungsschnitten in eine Folie oder Haut
JP2008166351A (ja) * 2006-12-27 2008-07-17 Nec Electronics Corp 半導体装置
EP2155449A1 (de) * 2007-05-24 2010-02-24 KrausMaffei Technologies GmbH Verfahren und vorrichtung zum schwächen eines werkstücks
ES2799998A1 (es) * 2019-06-21 2020-12-22 Univ Valladolid Aparato y procedimiento para la realizacion de grietas controladas en muestras de silicio monocristalino y multicristalino

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284965A (de) * 1961-11-17 1900-01-01
US3222963A (en) * 1964-03-11 1965-12-14 Nabiullin Faat Hatovich Device for scoring of crystalline semiconductor materials
US3326071A (en) * 1965-03-19 1967-06-20 Norton Co Dicing machine
DE1652512B2 (de) * 1967-05-29 1976-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbauelementen
US3545325A (en) * 1969-02-28 1970-12-08 Aerojet General Co Cutting apparatus
DE1931245A1 (de) * 1969-06-20 1971-07-08 Siemens Ag Verfahren zum Zerteilen von mit Halbleitermaterial beschichteten und mit Bauelementen versehenen Mg-Al-Spinellsubstratscheiben
US4046985A (en) * 1974-11-25 1977-09-06 International Business Machines Corporation Semiconductor wafer alignment apparatus
JPS5280901A (en) * 1975-12-26 1977-07-07 Yoshio Inoue Apparatus for drawing required contour line of image

Also Published As

Publication number Publication date
DE69011751T2 (de) 1995-03-16
EP0402230B1 (de) 1994-08-24
FR2648274B1 (fr) 1994-07-29
FR2648274A1 (fr) 1990-12-14
US5174188A (en) 1992-12-29
EP0402230A1 (de) 1990-12-12
JPH0342855A (ja) 1991-02-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee