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DE68917696D1 - Verfahren zur herstellung eines infrarotphotodetektors. - Google Patents

Verfahren zur herstellung eines infrarotphotodetektors.

Info

Publication number
DE68917696D1
DE68917696D1 DE68917696T DE68917696T DE68917696D1 DE 68917696 D1 DE68917696 D1 DE 68917696D1 DE 68917696 T DE68917696 T DE 68917696T DE 68917696 T DE68917696 T DE 68917696T DE 68917696 D1 DE68917696 D1 DE 68917696D1
Authority
DE
Germany
Prior art keywords
producing
infrared photodetector
photodetector
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917696T
Other languages
English (en)
Other versions
DE68917696T2 (de
Inventor
Charles Cockrum
Jeffrey BARTON
Eric Schulte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Application granted granted Critical
Publication of DE68917696D1 publication Critical patent/DE68917696D1/de
Publication of DE68917696T2 publication Critical patent/DE68917696T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
DE68917696T 1988-04-07 1989-03-13 Verfahren zur herstellung eines infrarotphotodetektors. Expired - Fee Related DE68917696T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/178,680 US4956304A (en) 1988-04-07 1988-04-07 Buried junction infrared photodetector process
PCT/US1989/000967 WO1989010007A2 (en) 1988-04-07 1989-03-13 Buried junction infrared photodetectors

Publications (2)

Publication Number Publication Date
DE68917696D1 true DE68917696D1 (de) 1994-09-29
DE68917696T2 DE68917696T2 (de) 1995-04-27

Family

ID=22653492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917696T Expired - Fee Related DE68917696T2 (de) 1988-04-07 1989-03-13 Verfahren zur herstellung eines infrarotphotodetektors.

Country Status (6)

Country Link
US (1) US4956304A (de)
EP (1) EP0374232B1 (de)
JP (1) JP2664504B2 (de)
DE (1) DE68917696T2 (de)
IL (1) IL89706A (de)
WO (1) WO1989010007A2 (de)

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US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
US5239193A (en) * 1990-04-02 1993-08-24 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits
US5141878A (en) * 1990-04-02 1992-08-25 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits and method for making same
US5100479A (en) * 1990-09-21 1992-03-31 The Board Of Regents Acting For And On Behalf Of The University Of Michigan Thermopile infrared detector with semiconductor supporting rim
US5314837A (en) * 1992-06-08 1994-05-24 Analog Devices, Incorporated Method of making a registration mark on a semiconductor
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
IL108589A (en) * 1994-02-08 1998-06-15 Technion Res & Dev Foundation SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION
US5536680A (en) * 1995-05-08 1996-07-16 Texas Instruments Incorporated Self-aligned bump bond infrared focal plane array architecture
US5804463A (en) * 1995-06-05 1998-09-08 Raytheon Ti Systems, Inc. Noble metal diffusion doping of mercury cadmium telluride for use in infrared detectors
US6180967B1 (en) * 1997-04-29 2001-01-30 Commissariat A L'energie Atomique Bicolor infrared detector with spatial/temporal coherence
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
KR100422294B1 (ko) * 2001-06-28 2004-03-12 한국과학기술연구원 Ｃｄ/Ｈｇ 분위기에서 열처리에 의한 ＨｇＣｄＴｅ 접합다이오드의 패시배이션 방법
US7041983B2 (en) * 2001-10-12 2006-05-09 Lockheed Martin Corporation Planar geometry buried junction infrared detector and focal plane array
AUPS001102A0 (en) * 2002-01-17 2002-02-07 University Of Western Australia, The An n-p junction and a method for making an n-p junction
US7456384B2 (en) * 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
RU2340981C1 (ru) * 2007-05-07 2008-12-10 Федеральное государственное унитарное предприятие "НПО "ОРИОН" Способ изготовления матричного фотоприемника
GB0712618D0 (en) * 2007-06-29 2007-08-08 Durham Scient Crystals Ltd Semiconductor device structure and method of manufacture thereof
US12176367B2 (en) * 2020-09-25 2024-12-24 Visera Technologies Company Limited Semiconductor device

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US1585517A (en) * 1926-05-18 Available cop
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3677280A (en) * 1971-06-21 1972-07-18 Fairchild Camera Instr Co Optimum high gain-bandwidth phototransistor structure
US3858306A (en) * 1971-08-05 1975-01-07 Honeywell Inc Alloy junctions in mercury cadmium telluride
FR2168934B1 (de) * 1972-01-27 1977-04-01 Telecommunications Sa
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
US4105478A (en) * 1977-01-06 1978-08-08 Honeywell, Inc. Doping hgcdte with li
US4206003A (en) * 1977-07-05 1980-06-03 Honeywell Inc. Method of forming a mercury cadmium telluride photodiode
US4181755A (en) * 1978-11-21 1980-01-01 Rca Corporation Thin film pattern generation by an inverse self-lifting technique
GB2095898B (en) * 1981-03-27 1985-01-09 Philips Electronic Associated Methods of manufacturing a detector device
DE3278553D1 (en) * 1981-06-24 1988-06-30 Secr Defence Brit Photo diodes
US4439912A (en) * 1982-04-19 1984-04-03 The United States Of America As Represented By The Secretary Of The Army Infrared detector and method of making same
JPS5979582A (ja) * 1982-10-29 1984-05-08 Fujitsu Ltd 半導体素子の製造方法
FR2536908B1 (fr) * 1982-11-30 1986-03-14 Telecommunications Sa Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant
US4454008A (en) * 1983-02-24 1984-06-12 The United States Of America As Represented By The Secretary Of The Army Electrochemical method for producing a passivated junction in alloy semiconductors
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4549195A (en) * 1983-04-14 1985-10-22 Westinghouse Electric Corp. Heterojunction semiconductor device
US4436580A (en) * 1983-08-12 1984-03-13 The United States Of America As Represented By The Secretary Of The Army Method of preparing a mercury cadium telluride substrate for passivation and processing
US4456630A (en) * 1983-08-18 1984-06-26 Monosolar, Inc. Method of forming ohmic contacts
US4640738A (en) * 1984-06-22 1987-02-03 International Business Machines Corporation Semiconductor contact protection
US4589192A (en) * 1984-11-02 1986-05-20 The United States Of America As Represented By The Secretary Of The Army Hybrid epitaxial growth process
US4588446A (en) * 1985-02-21 1986-05-13 Texas Instruments Incorporated Method for producing graded band gap mercury cadmium telluride
JPS6244868A (ja) * 1985-08-22 1987-02-26 Nec Corp デ−タ出力方式
US4687542A (en) * 1985-10-24 1987-08-18 Texas Instruments Incorporated Vacuum processing system
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
FR2604298B1 (fr) * 1986-09-19 1988-10-28 Commissariat Energie Atomique Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p
JPH0661508B2 (ja) * 1989-07-03 1994-08-17 有限会社寿技研 エアーフィルター内蔵式エアー工具
JP3059530B2 (ja) * 1991-06-27 2000-07-04 株式会社リコー ファクシミリ装置

Also Published As

Publication number Publication date
JP2664504B2 (ja) 1997-10-15
WO1989010007A2 (en) 1989-10-19
DE68917696T2 (de) 1995-04-27
EP0374232B1 (de) 1994-08-24
WO1989010007A3 (en) 1990-05-31
IL89706A (en) 1992-09-06
US4956304A (en) 1990-09-11
JPH02503973A (ja) 1990-11-15
IL89706A0 (en) 1989-09-28
EP0374232A1 (de) 1990-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO., LEXINGTON, MASS., US

8339 Ceased/non-payment of the annual fee