DE68907368D1 - Integrierte schaltung mit komplementaeren mos-transistoren. - Google Patents
Integrierte schaltung mit komplementaeren mos-transistoren.Info
- Publication number
- DE68907368D1 DE68907368D1 DE8989200866T DE68907368T DE68907368D1 DE 68907368 D1 DE68907368 D1 DE 68907368D1 DE 8989200866 T DE8989200866 T DE 8989200866T DE 68907368 T DE68907368 T DE 68907368T DE 68907368 D1 DE68907368 D1 DE 68907368D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- mos transistors
- complementary mos
- complementary
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000295 complement effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
- H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
- H02P7/04—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors by means of a H-bridge circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8800922A NL8800922A (nl) | 1988-04-11 | 1988-04-11 | Geintegreerde schakeling met complementaire mos-transistor. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68907368D1 true DE68907368D1 (de) | 1993-08-05 |
DE68907368T2 DE68907368T2 (de) | 1994-01-20 |
Family
ID=19852102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89200866T Expired - Fee Related DE68907368T2 (de) | 1988-04-11 | 1989-04-06 | Integrierte Schaltung mit komplementären MOS-Transistoren. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4952998A (de) |
EP (1) | EP0337550B1 (de) |
JP (1) | JPH0748552B2 (de) |
KR (1) | KR0136384B1 (de) |
DE (1) | DE68907368T2 (de) |
NL (1) | NL8800922A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243214A (en) * | 1992-04-14 | 1993-09-07 | North American Philips Corp. | Power integrated circuit with latch-up prevention |
JPH0820473A (ja) * | 1994-07-06 | 1996-01-23 | Kansai Shinku Kk | 釣り糸巻替え機における張力調節装置 |
DE19540169C1 (de) * | 1995-10-27 | 1996-11-28 | Texas Instruments Deutschland | Integrierte CMOS-Schaltung mit Schaltung zur Latch-up-Verhinderung sowie Status-Speicher |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4574467A (en) * | 1983-08-31 | 1986-03-11 | Solid State Scientific, Inc. | N- well CMOS process on a P substrate with double field guard rings and a PMOS buried channel |
JPS6088457A (ja) * | 1983-10-14 | 1985-05-18 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 集積回路 |
JPH099654A (ja) * | 1995-06-23 | 1997-01-10 | Fukoku Co Ltd | 超音波モータ |
-
1988
- 1988-04-11 NL NL8800922A patent/NL8800922A/nl not_active Application Discontinuation
-
1989
- 1989-04-06 EP EP89200866A patent/EP0337550B1/de not_active Expired - Lifetime
- 1989-04-06 DE DE89200866T patent/DE68907368T2/de not_active Expired - Fee Related
- 1989-04-07 US US07/334,963 patent/US4952998A/en not_active Expired - Fee Related
- 1989-04-11 JP JP1089864A patent/JPH0748552B2/ja not_active Expired - Lifetime
- 1989-04-11 KR KR1019890004736A patent/KR0136384B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0337550A1 (de) | 1989-10-18 |
JPH0212865A (ja) | 1990-01-17 |
JPH0748552B2 (ja) | 1995-05-24 |
NL8800922A (nl) | 1989-11-01 |
KR890016628A (ko) | 1989-11-29 |
EP0337550B1 (de) | 1993-06-30 |
DE68907368T2 (de) | 1994-01-20 |
KR0136384B1 (ko) | 1998-04-24 |
US4952998A (en) | 1990-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |