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DE60335524D1 - Verfahren zur photolithographischen Herstellung schmaler Transistor-Gate-Elemente - Google Patents

Verfahren zur photolithographischen Herstellung schmaler Transistor-Gate-Elemente

Info

Publication number
DE60335524D1
DE60335524D1 DE60335524T DE60335524T DE60335524D1 DE 60335524 D1 DE60335524 D1 DE 60335524D1 DE 60335524 T DE60335524 T DE 60335524T DE 60335524 T DE60335524 T DE 60335524T DE 60335524 D1 DE60335524 D1 DE 60335524D1
Authority
DE
Germany
Prior art keywords
transistor gate
gate elements
photolithographic production
narrow transistor
narrow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335524T
Other languages
English (en)
Inventor
Reima T Laaksonen
Jarvis B Jacobs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE60335524D1 publication Critical patent/DE60335524D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE60335524T 2002-05-31 2003-05-29 Verfahren zur photolithographischen Herstellung schmaler Transistor-Gate-Elemente Expired - Lifetime DE60335524D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/160,197 US6762130B2 (en) 2002-05-31 2002-05-31 Method of photolithographically forming extremely narrow transistor gate elements

Publications (1)

Publication Number Publication Date
DE60335524D1 true DE60335524D1 (de) 2011-02-10

Family

ID=29583099

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335524T Expired - Lifetime DE60335524D1 (de) 2002-05-31 2003-05-29 Verfahren zur photolithographischen Herstellung schmaler Transistor-Gate-Elemente

Country Status (4)

Country Link
US (1) US6762130B2 (de)
EP (1) EP1482541B1 (de)
JP (1) JP2004031944A (de)
DE (1) DE60335524D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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US6930028B1 (en) * 1997-06-09 2005-08-16 Texas Instruments Incorporated Antireflective structure and method
US6960416B2 (en) * 2002-03-01 2005-11-01 Applied Materials, Inc. Method and apparatus for controlling etch processes during fabrication of semiconductor devices
US7225047B2 (en) * 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US6911399B2 (en) * 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
KR100706780B1 (ko) * 2004-06-25 2007-04-11 주식회사 하이닉스반도체 주변영역의 선폭을 줄일 수 있는 반도체 소자 제조 방법
US7172969B2 (en) * 2004-08-26 2007-02-06 Tokyo Electron Limited Method and system for etching a film stack
US20060154388A1 (en) * 2005-01-08 2006-07-13 Richard Lewington Integrated metrology chamber for transparent substrates
US7601272B2 (en) * 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing
US20070037371A1 (en) * 2005-08-10 2007-02-15 Zhigang Wang Method of forming gate electrode structures
JP2007081383A (ja) 2005-08-15 2007-03-29 Fujitsu Ltd 微細構造の製造方法
US7229928B2 (en) * 2005-08-31 2007-06-12 Infineon Technologies Ag Method for processing a layered stack in the production of a semiconductor device
US7962113B2 (en) * 2005-10-31 2011-06-14 Silicon Laboratories Inc. Receiver with multi-tone wideband I/Q mismatch calibration and method therefor
US20070119813A1 (en) * 2005-11-28 2007-05-31 Texas Instruments Incorporated Gate patterning method for semiconductor processing
KR100704380B1 (ko) * 2005-12-06 2007-04-09 한국전자통신연구원 반도체 소자 제조 방법
JP4865361B2 (ja) 2006-03-01 2012-02-01 株式会社日立ハイテクノロジーズ ドライエッチング方法
US7662718B2 (en) * 2006-03-09 2010-02-16 Micron Technology, Inc. Trim process for critical dimension control for integrated circuits
US20070210030A1 (en) * 2006-03-13 2007-09-13 Been-Jon Woo Method of patterning conductive structure
US7851369B2 (en) * 2006-06-05 2010-12-14 Lam Research Corporation Hardmask trim method
US20080160256A1 (en) * 2006-12-30 2008-07-03 Bristol Robert L Reduction of line edge roughness by chemical mechanical polishing
JP2009224374A (ja) * 2008-03-13 2009-10-01 Oki Semiconductor Co Ltd Ｐｅｂ装置及びその制御方法
JP5547878B2 (ja) * 2008-06-30 2014-07-16 株式会社日立ハイテクノロジーズ 半導体加工方法
JP5128421B2 (ja) 2008-09-04 2013-01-23 東京エレクトロン株式会社 プラズマ処理方法およびレジストパターンの改質方法
US8048813B2 (en) * 2008-12-01 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing delamination in the fabrication of small-pitch devices
US8304317B2 (en) * 2008-12-31 2012-11-06 Texas Instruments Incorporated Gate line edge roughness reduction by using 2P/2E process together with high temperature bake
US10359699B2 (en) * 2017-08-24 2019-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6010829A (en) * 1996-05-31 2000-01-04 Texas Instruments Incorporated Polysilicon linewidth reduction using a BARC-poly etch process
US6036875A (en) * 1997-02-20 2000-03-14 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor device with ultra-fine line geometry
US6107172A (en) * 1997-08-01 2000-08-22 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using an SiON BARC
US6121123A (en) * 1997-09-05 2000-09-19 Advanced Micro Devices, Inc. Gate pattern formation using a BARC as a hardmask
US6372651B1 (en) * 1998-07-17 2002-04-16 Advanced Micro Devices, Inc. Method for trimming a photoresist pattern line for memory gate etching
US6362111B1 (en) 1998-12-09 2002-03-26 Texas Instruments Incorporated Tunable gate linewidth reduction process
US6103559A (en) * 1999-03-30 2000-08-15 Amd, Inc. (Advanced Micro Devices) Method of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabrication
US6537867B1 (en) * 1999-11-03 2003-03-25 Agere Systems Inc. High speed low voltage semiconductor devices and method of fabrication
US6514871B1 (en) * 2000-06-19 2003-02-04 Advanced Micro Devices, Inc. Gate etch process with extended CD trim capability
US6368982B1 (en) * 2000-11-15 2002-04-09 Advanced Micro Devices, Inc. Pattern reduction by trimming a plurality of layers of different handmask materials
US6794230B2 (en) * 2002-10-31 2004-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Approach to improve line end shortening

Also Published As

Publication number Publication date
EP1482541A2 (de) 2004-12-01
US6762130B2 (en) 2004-07-13
JP2004031944A (ja) 2004-01-29
EP1482541B1 (de) 2010-12-29
US20030224606A1 (en) 2003-12-04
EP1482541A3 (de) 2005-03-23

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